頁 2045 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29C8G96MAZBADJV-5 WT	Micron Technology Inc.	IC FLASH/LPDRAM 12GBIT 168VFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 8Gb (512M x 16)(NAND), 4Gb (128M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封裝: 168-VFBGA	庫存6,560	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	8Gb (512M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)	Parallel	200MHz	-	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IDT71T75602S100PFGI	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 100MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存5,280	SRAM	SRAM - Synchronous ZBT	18Mb (512K x 36)	Parallel	100MHz	-	5ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71256TTSA25Y8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 25NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	封裝: 28-BSOJ (0.300", 7.62mm Width)	庫存6,592	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
MT48LC4M32LFF5-10 IT:G	Micron Technology Inc.	IC SDRAM 128MBIT 100MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	封裝: 90-VFBGA	庫存4,448	DRAM	SDRAM - Mobile LPSDR	128Mb (4M x 32)	Parallel	100MHz	15ns	7ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
AT49BV161-70CI	Microchip Technology	IC FLASH 16MBIT 70NS 48CBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200µs Access Time: 70ns Voltage - Supply: 2.65 V ~ 3.3 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 48-TFBGA, CSPBGA Supplier Device Package: 48-CBGA (6x8)	封裝: 48-TFBGA, CSPBGA	庫存4,576	FLASH	FLASH	16Mb (2M x 8, 1M x 16)	Parallel	-	200µs	70ns	2.65 V ~ 3.3 V	-40°C ~ 85°C (TC)	Surface Mount	48-TFBGA, CSPBGA	48-CBGA (6x8)
CY7C1399B-15VC	Cypress Semiconductor Corp	IC SRAM 256KBIT 15NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	封裝: 28-BSOJ (0.300", 7.62mm Width)	庫存5,712	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
70T3319S200BC8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 200MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	封裝: 256-LBGA	庫存6,368	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	200MHz	-	3.4ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
EDBA164B2PF-1D-F-R TR	Micron Technology Inc.	IC SDRAM 16GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 16Gb (256M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	封裝: -	庫存4,048	DRAM	SDRAM - Mobile LPDDR2	16Gb (256M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	-	-
IS46R16320D-6BLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 167MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (8x13)	封裝: 60-TFBGA	庫存4,800	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (8x13)
MT48LC16M16A2B4-7E:G TR	Micron Technology Inc.	IC SDRAM 256MBIT 133MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 14ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x8)	封裝: 54-VFBGA	庫存7,808	DRAM	SDRAM	256Mb (16M x 16)	Parallel	133MHz	14ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x8)
U62256AS2C07LLG1TR	Alliance Memory, Inc.	IC SRAM 256KBIT 70NS 28SOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.330", 8.38mm Width) Supplier Device Package: 28-SOP	封裝: 28-SOIC (0.330", 8.38mm Width)	庫存5,040	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-SOIC (0.330", 8.38mm Width)	28-SOP
BR24T04FVM-WTR	Rohm Semiconductor	IC EEPROM 4KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-MSOP	封裝: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)	庫存22,200	EEPROM	EEPROM	4Kb (512 x 8)	I2C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-VSSOP, 8-MSOP (0.110", 2.80mm Width)	8-MSOP
AT28HC64BF-12SU-T	Microchip Technology	120NS, SOIC, IND TEMP, GREEN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	封裝: 28-SOIC (0.295", 7.50mm Width)	庫存4,848	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	10ms	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
25AA160C-I/MS	Microchip Technology	IC EEPROM 16KBIT 10MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存7,152	EEPROM	EEPROM	16Kb (2K x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
IS43TR16640BL-125JBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: 96-TFBGA	庫存9,108	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
AT28HC256F-90DM/883	Microchip Technology	IC EEPROM 256K PARALLEL 28CDIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 3ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CDIP	封裝: 28-CDIP (0.600", 15.24mm)	庫存7,104	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	3ms	90ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TC)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CDIP
S34MS01G104BHI910	Cypress Semiconductor Corp	IC FLASH 1G PARALLEL 63BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	封裝: 63-VFBGA	庫存3,824	FLASH	FLASH - NAND	1Gb (64M x 16)	Parallel	-	45ns	45ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-BGA (11x9)
IS25LP256D-JLLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 256M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封裝: 8-WDFN Exposed Pad	庫存2,368	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
MT53E768M32D2NP-046-WT-B	Micron Technology Inc.	IC DRAM 24GBIT FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NV25320MUW3VTBG	onsemi	IC EEPROM 32KBIT SPI 10MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kbit Memory Interface: SPI Clock Frequency: 10 MHz Write Cycle Time - Word, Page: 5ms Access Time: 35 ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封裝: -	Request a Quote	EEPROM	EEPROM	32Kbit	SPI	10 MHz	5ms	35 ns	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
GD25LQ64ESAGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 64MBIT SPI/QUAD 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 100µs, 4ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	64Mbit	SPI - Quad I/O, QPI	133 MHz	100µs, 4ms	6 ns	1.65V ~ 2V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOP
IS46LD32128B-25BPLA1-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT HSUL 12 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	4Gbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
RMLV1616AGSD-5S2-AA1	Renesas Electronics Corporation	IC SRAM 16MBIT PAR 52TSOP II Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 52-TFSOP (0.350", 8.89mm Width) Supplier Device Package: 52-TSOP II	封裝: -	庫存387	SRAM	SRAM	16Mbit	Parallel	-	55ns	55 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	52-TFSOP (0.350", 8.89mm Width)	52-TSOP II
FT24C04A-KSR-B	Fremont Micro Devices Ltd	IC EEPROM 4KBIT I2C 1MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 550 ns Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	EEPROM	EEPROM	4Kbit	I2C	1 MHz	5ms	550 ns	1.8V ~ 5.5V	-40°C ~ 85°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IS64WV204816BLL-12CTLA3	ISSI, Integrated Silicon Solution Inc	32Mb,High-Speed-Automotive,Async Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 32Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12 ns Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	32Mbit	Parallel	-	12ns	12 ns	2.4V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS25LX128-JHLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 128MBIT SPI/OCT 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 128Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封裝: -	Request a Quote	FLASH	FLASH	128Mbit	SPI - Octal I/O	133 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
S25FL256LAGBHB033	Infineon Technologies	IC FLASH 256MBIT SPI/QUAD 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 60µs, 1.2ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	256Mbit	SPI - Quad I/O, QPI	133 MHz	60µs, 1.2ms	6 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
CAT93C57V-26528T	onsemi	IC EEPROM 2KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: Microwire Clock Frequency: 1 MHz Write Cycle Time - Word, Page: - Access Time: 250 ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	EEPROM	EEPROM	2Kbit	Microwire	1 MHz	-	250 ns	2.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

MT29C8G96MAZBADJV-5 WT

Micron Technology Inc.

IC FLASH/LPDRAM 12GBIT 168VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 8Gb (512M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封裝: 168-VFBGA

庫存6,560

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

8Gb (512M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)

Parallel

200MHz

-

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IDT71T75602S100PFGI

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 100MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存5,280

SRAM

SRAM - Synchronous ZBT

18Mb (512K x 36)

Parallel

100MHz

-

5ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71256TTSA25Y8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

封裝: 28-BSOJ (0.300", 7.62mm Width)

庫存6,592

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

MT48LC4M32LFF5-10 IT:G

Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

封裝: 90-VFBGA

庫存4,448

DRAM

SDRAM - Mobile LPSDR

128Mb (4M x 32)

Parallel

100MHz

15ns

7ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

AT49BV161-70CI

Microchip Technology

IC FLASH 16MBIT 70NS 48CBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200µs
Access Time: 70ns
Voltage - Supply: 2.65 V ~ 3.3 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA, CSPBGA
Supplier Device Package: 48-CBGA (6x8)

封裝: 48-TFBGA, CSPBGA

庫存4,576

FLASH

16Mb (2M x 8, 1M x 16)

Parallel

-

200µs

70ns

2.65 V ~ 3.3 V

-40°C ~ 85°C (TC)

Surface Mount

48-TFBGA, CSPBGA

48-CBGA (6x8)

CY7C1399B-15VC

Cypress Semiconductor Corp

IC SRAM 256KBIT 15NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

封裝: 28-BSOJ (0.300", 7.62mm Width)

庫存5,712

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

70T3319S200BC8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 200MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

封裝: 256-LBGA

庫存6,368

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

200MHz

-

3.4ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

EDBA164B2PF-1D-F-R TR

Micron Technology Inc.

IC SDRAM 16GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 16Gb (256M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,048

DRAM

SDRAM - Mobile LPDDR2

16Gb (256M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

-

IS46R16320D-6BLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x13)

封裝: 60-TFBGA

庫存4,800

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (8x13)

MT48LC16M16A2B4-7E:G TR

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x8)

封裝: 54-VFBGA

庫存7,808

DRAM

SDRAM

256Mb (16M x 16)

Parallel

133MHz

14ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x8)

U62256AS2C07LLG1TR

Alliance Memory, Inc.

IC SRAM 256KBIT 70NS 28SOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.330", 8.38mm Width)
Supplier Device Package: 28-SOP

封裝: 28-SOIC (0.330", 8.38mm Width)

庫存5,040

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-SOIC (0.330", 8.38mm Width)

28-SOP

BR24T04FVM-WTR

Rohm Semiconductor

IC EEPROM 4KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

庫存22,200

EEPROM

4Kb (512 x 8)

I2C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

8-MSOP

AT28HC64BF-12SU-T

Microchip Technology

120NS, SOIC, IND TEMP, GREEN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

封裝: 28-SOIC (0.295", 7.50mm Width)

庫存4,848

EEPROM

64Kb (8K x 8)

Parallel

-

10ms

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

25AA160C-I/MS

Microchip Technology

IC EEPROM 16KBIT 10MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存7,152

EEPROM

16Kb (2K x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

IS43TR16640BL-125JBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

庫存9,108

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

AT28HC256F-90DM/883

Microchip Technology

IC EEPROM 256K PARALLEL 28CDIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 3ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CDIP

封裝: 28-CDIP (0.600", 15.24mm)

庫存7,104

EEPROM

256Kb (32K x 8)

Parallel

-

3ms

90ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TC)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CDIP

S34MS01G104BHI910

Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 63BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)

封裝: 63-VFBGA

庫存3,824

FLASH

FLASH - NAND

1Gb (64M x 16)

Parallel

-

45ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-BGA (11x9)

IS25LP256D-JLLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 256M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封裝: 8-WDFN Exposed Pad

庫存2,368

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

MT53E768M32D2NP-046-WT-B

Micron Technology Inc.

IC DRAM 24GBIT FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

NV25320MUW3VTBG

onsemi

IC EEPROM 32KBIT SPI 10MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kbit
Memory Interface: SPI
Clock Frequency: 10 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 35 ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封裝: -

Request a Quote

EEPROM

32Kbit

SPI

10 MHz

5ms

35 ns

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

GD25LQ64ESAGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 64MBIT SPI/QUAD 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 100µs, 4ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

FLASH

FLASH - NOR (SLC)

64Mbit

SPI - Quad I/O, QPI

133 MHz

100µs, 4ms

6 ns

1.65V ~ 2V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOP

IS46LD32128B-25BPLA1-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封裝: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2-S4

4Gbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

RMLV1616AGSD-5S2-AA1

Renesas Electronics Corporation

IC SRAM 16MBIT PAR 52TSOP II

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Supplier Device Package: 52-TSOP II

封裝: -

庫存387

SRAM

16Mbit

Parallel

-

55ns

55 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

52-TFSOP (0.350", 8.89mm Width)

52-TSOP II

FT24C04A-KSR-B

Fremont Micro Devices Ltd

IC EEPROM 4KBIT I2C 1MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550 ns
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

EEPROM

4Kbit

I2C

1 MHz

5ms

550 ns

1.8V ~ 5.5V

-40°C ~ 85°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IS64WV204816BLL-12CTLA3

ISSI, Integrated Silicon Solution Inc

32Mb,High-Speed-Automotive,Async

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 32Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12 ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: -

Request a Quote

SRAM

SRAM - Asynchronous

32Mbit

Parallel

-

12ns

12 ns

2.4V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS25LX128-JHLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/OCT 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 128Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封裝: -

Request a Quote

FLASH

128Mbit

SPI - Octal I/O

133 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

S25FL256LAGBHB033

Infineon Technologies

IC FLASH 256MBIT SPI/QUAD 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 60µs, 1.2ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

封裝: -

Request a Quote

FLASH

FLASH - NOR (SLC)

256Mbit

SPI - Quad I/O, QPI

133 MHz

60µs, 1.2ms

6 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

CAT93C57V-26528T

onsemi

IC EEPROM 2KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: Microwire
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: -
Access Time: 250 ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

EEPROM

2Kbit

Microwire

1 MHz

-

250 ns

2.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC