頁 194 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EDF620AAABH-GD-F-D	Micron Technology Inc.	LPDDR3 6G 192MX32 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,896	-	-	-	-	-	-	-	-	-	-	-	-
CY7C1474BV25-167BGCT	Cypress Semiconductor Corp	IC SRAM 72MBIT 167MHZ 209FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (1M x 72) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 209-BGA Supplier Device Package: 209-FBGA (14x22)	封裝: 209-BGA	庫存2,880	SRAM	SRAM - Synchronous	72Mb (1M x 72)	Parallel	167MHz	-	3.4ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	209-BGA	209-FBGA (14x22)
CY7C1425AV18-167BZXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 167MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (4M x 9) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封裝: 165-LBGA	庫存6,928	SRAM	SRAM - Synchronous, QDR II	36Mb (4M x 9)	Parallel	167MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
NAND256W3A2BZA6E	Micron Technology Inc.	IC FLASH 256MBIT 50NS 55VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50ns Access Time: 50ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 55-TFBGA Supplier Device Package: 55-VFBGA (8x10)	封裝: 55-TFBGA	庫存73,380	FLASH	FLASH - NAND	256Mb (32M x 8)	Parallel	-	50ns	50ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	55-TFBGA	55-VFBGA (8x10)
MT47H256M4BT-5E:A	Micron Technology Inc.	IC SDRAM 1GBIT 200MHZ 92FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (256M x 4) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 600ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 92-VFBGA Supplier Device Package: 92-FBGA (11x19)	封裝: 92-VFBGA	庫存5,360	DRAM	SDRAM - DDR2	1Gb (256M x 4)	Parallel	200MHz	15ns	600ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	92-VFBGA	92-FBGA (11x19)
MT46V64M8P-5B:F	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	封裝: 66-TSSOP (0.400", 10.16mm Width)	庫存21,060	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
AT27C256R-45PI	Microchip Technology	IC OTP 256KBIT 45NS 28DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	封裝: 28-DIP (0.600", 15.24mm)	庫存4,768	EPROM	EPROM - OTP	256Kb (32K x 8)	Parallel	-	-	45ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
AT28C256-15UM/883-815	Microchip Technology	IC EEPROM 256KBIT 150NS 28PIN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Through Hole Package / Case: 28-BCPGA Supplier Device Package: 28-CPGA (13.55x15.06)	封裝: 28-BCPGA	庫存2,112	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	150ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TC)	Through Hole	28-BCPGA	28-CPGA (13.55x15.06)
71V321S55J8	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 55NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封裝: 52-LCC (J-Lead)	庫存2,304	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	55ns	55ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
IS43R32400E-5BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 200MHZ 144BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-LFBGA Supplier Device Package: 144-LFBGA (12x12)	封裝: 144-LFBGA	庫存2,688	DRAM	SDRAM - DDR	128Mb (4M x 32)	Parallel	200MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	144-LFBGA	144-LFBGA (12x12)
IS46R16160D-5BLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 200MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (8x13)	封裝: 60-TFBGA	庫存7,952	DRAM	SDRAM - DDR	256Mb (16M x 16)	Parallel	200MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (8x13)
MT41K256M8DA-125 IT:K	Micron Technology Inc.	IC SDRAM 2GBIT 800MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.75ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	封裝: 78-TFBGA	庫存66,324	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	800MHz	-	13.75ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
S25FS064SDSMFN010	Cypress Semiconductor Corp	IC FLASH 64MBIT 80MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.209", 5.30mm Width)	庫存5,632	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O	80MHz	-	-	1.7 V ~ 2 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
25LC080D-H/SN	Microchip Technology	IC EEPROM 8KBIT 5MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,632	EEPROM	EEPROM	8Kb (1K x 8)	SPI	5MHz	6ms	-	2.5 V ~ 5.5 V	-40°C ~ 150°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT25DF011-SSHNGU-B	Adesto Technologies	IC FLASH 1MBIT 85MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 8µs, 3.5ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,248	FLASH	FLASH	1Mb (128K x 8)	SPI	104MHz	8µs, 3.5ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
71V321L35JGI8	IDT, Integrated Device Technology Inc	IC SRAM 16K PARALLEL 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封裝: 52-LCC (J-Lead)	庫存6,000	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
709279L12PFGI8	IDT, Integrated Device Technology Inc	IC SRAM 512K PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存2,352	SRAM	SRAM - Dual Port, Synchronous	512Kb (32K x 16)	Parallel	-	-	12ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
93LC86CT-E/SN15KVAO	Microchip Technology	16K 1024X16 OR 2048X8 SERIAL EE Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8, 1K x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,584	EEPROM	EEPROM	16Kb (2K x 8, 1K x 16)	SPI	2MHz	5ms	-	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS25WE256E-RMLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 256MB 1.8V SPI 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 50µs, 2ms Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封裝: -	Request a Quote	FLASH	FLASH - NOR	256Mbit	SPI - Quad I/O, QPI, DTR	166 MHz	50µs, 2ms	-	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
EM63B165TS-5SG	Etron Technology, Inc.	IC DRAM 512MBIT PAR 54TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mbit Memory Interface: Parallel Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 10ns Access Time: 4.5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: -	Request a Quote	DRAM	SDRAM	512Mbit	Parallel	200 MHz	10ns	4.5 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MT58L128L32P1T-6	Micron Technology Inc.	IC SRAM 4MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 3.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封裝: -	Request a Quote	SRAM	SRAM	4Mbit	Parallel	166 MHz	-	3.5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
AS4C512M16D4A-62BCNTR	Alliance Memory, Inc.	DDR4, 8GB, 512M X 16, 1.2V, 96-B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: POD Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	POD	1.6 GHz	15ns	18 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13)
MT58L256L18P1T-5	Micron Technology Inc.	IC SRAM 4MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 2.8 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封裝: -	Request a Quote	SRAM	SRAM	4Mbit	Parallel	200 MHz	-	2.8 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
CY7C131-55NCT	Cypress Semiconductor Corp	IC SRAM 8KBIT PARALLEL 52PQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-BQFP Supplier Device Package: 52-PQFP (10x10)	封裝: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	8Kbit	Parallel	-	55ns	55 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	52-BQFP	52-PQFP (10x10)
W631GG8MB09I-TR	Winbond Electronics	IC DRAM 1GBIT SSTL 15 78VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: SSTL_15 Clock Frequency: 1.066 GHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-VFBGA (8x10.5)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	SSTL_15	1.066 GHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-VFBGA (8x10.5)
GD5F1GQ4UFYIGY	GigaDevice Semiconductor (HK) Limited	IC FLASH 1GBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gbit Memory Interface: SPI - Quad I/O Clock Frequency: 120 MHz Write Cycle Time - Word, Page: 700µs Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	封裝: -	Request a Quote	FLASH	FLASH - NAND	1Gbit	SPI - Quad I/O	120 MHz	700µs	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
MT40A2G16SKL-062E-B-TR	Micron Technology Inc.	IC DRAM 32GBIT PARALLEL 96FBGA Memory Type: Non-Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: 13.75 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (10.5x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR4	32Gbit	Parallel	1.6 GHz	-	13.75 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (10.5x13)
GD25VQ80CTIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 8MBIT SPI/QUAD I/O 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	FLASH	FLASH - NOR	8Mbit	SPI - Quad I/O	104 MHz	50µs, 3ms	-	2.3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP

EDF620AAABH-GD-F-D

Micron Technology Inc.

LPDDR3 6G 192MX32 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,896

-

CY7C1474BV25-167BGCT

Cypress Semiconductor Corp

IC SRAM 72MBIT 167MHZ 209FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (1M x 72)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 209-BGA
Supplier Device Package: 209-FBGA (14x22)

封裝: 209-BGA

庫存2,880

SRAM

SRAM - Synchronous

72Mb (1M x 72)

Parallel

167MHz

-

3.4ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

209-BGA

209-FBGA (14x22)

CY7C1425AV18-167BZXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 167MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (4M x 9)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封裝: 165-LBGA

庫存6,928

SRAM

SRAM - Synchronous, QDR II

36Mb (4M x 9)

Parallel

167MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

NAND256W3A2BZA6E

Micron Technology Inc.

IC FLASH 256MBIT 50NS 55VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 55-TFBGA
Supplier Device Package: 55-VFBGA (8x10)

封裝: 55-TFBGA

庫存73,380

FLASH

FLASH - NAND

256Mb (32M x 8)

Parallel

-

50ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

55-TFBGA

55-VFBGA (8x10)

MT47H256M4BT-5E:A

Micron Technology Inc.

IC SDRAM 1GBIT 200MHZ 92FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (256M x 4)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 600ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 92-VFBGA
Supplier Device Package: 92-FBGA (11x19)

封裝: 92-VFBGA

庫存5,360

DRAM

SDRAM - DDR2

1Gb (256M x 4)

Parallel

200MHz

15ns

600ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

92-VFBGA

92-FBGA (11x19)

MT46V64M8P-5B:F

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

封裝: 66-TSSOP (0.400", 10.16mm Width)

庫存21,060

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

AT27C256R-45PI

Microchip Technology

IC OTP 256KBIT 45NS 28DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

封裝: 28-DIP (0.600", 15.24mm)

庫存4,768

EPROM

EPROM - OTP

256Kb (32K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

AT28C256-15UM/883-815

Microchip Technology

IC EEPROM 256KBIT 150NS 28PIN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Through Hole
Package / Case: 28-BCPGA
Supplier Device Package: 28-CPGA (13.55x15.06)

封裝: 28-BCPGA

庫存2,112

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

150ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TC)

Through Hole

28-BCPGA

28-CPGA (13.55x15.06)

71V321S55J8

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封裝: 52-LCC (J-Lead)

庫存2,304

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

55ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

IS43R32400E-5BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 200MHZ 144BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-LFBGA
Supplier Device Package: 144-LFBGA (12x12)

封裝: 144-LFBGA

庫存2,688

DRAM

SDRAM - DDR

128Mb (4M x 32)

Parallel

200MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

144-LFBGA

144-LFBGA (12x12)

IS46R16160D-5BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 200MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x13)

封裝: 60-TFBGA

庫存7,952

DRAM

SDRAM - DDR

256Mb (16M x 16)

Parallel

200MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (8x13)

MT41K256M8DA-125 IT:K

Micron Technology Inc.

IC SDRAM 2GBIT 800MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.75ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封裝: 78-TFBGA

庫存66,324

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

800MHz

-

13.75ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

S25FS064SDSMFN010

Cypress Semiconductor Corp

IC FLASH 64MBIT 80MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.209", 5.30mm Width)

庫存5,632

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O

80MHz

-

1.7 V ~ 2 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

25LC080D-H/SN

Microchip Technology

IC EEPROM 8KBIT 5MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,632

EEPROM

8Kb (1K x 8)

SPI

5MHz

6ms

-

2.5 V ~ 5.5 V

-40°C ~ 150°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT25DF011-SSHNGU-B

Adesto Technologies

IC FLASH 1MBIT 85MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 8µs, 3.5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,248

FLASH

1Mb (128K x 8)

SPI

104MHz

8µs, 3.5ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

71V321L35JGI8

IDT, Integrated Device Technology Inc

IC SRAM 16K PARALLEL 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封裝: 52-LCC (J-Lead)

庫存6,000

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

35ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

709279L12PFGI8

IDT, Integrated Device Technology Inc

IC SRAM 512K PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存2,352

SRAM

SRAM - Dual Port, Synchronous

512Kb (32K x 16)

Parallel

-

12ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

93LC86CT-E/SN15KVAO

Microchip Technology

16K 1024X16 OR 2048X8 SERIAL EE

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8, 1K x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,584

EEPROM

16Kb (2K x 8, 1K x 16)

SPI

2MHz

5ms

-

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS25WE256E-RMLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 256MB 1.8V SPI 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 50µs, 2ms
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封裝: -

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FLASH

FLASH - NOR

256Mbit

SPI - Quad I/O, QPI, DTR

166 MHz

50µs, 2ms

-

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

EM63B165TS-5SG

Etron Technology, Inc.

IC DRAM 512MBIT PAR 54TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mbit
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 10ns
Access Time: 4.5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: -

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DRAM

SDRAM

512Mbit

Parallel

200 MHz

10ns

4.5 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MT58L128L32P1T-6

Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封裝: -

Request a Quote

SRAM

4Mbit

Parallel

166 MHz

-

3.5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

AS4C512M16D4A-62BCNTR

Alliance Memory, Inc.

DDR4, 8GB, 512M X 16, 1.2V, 96-B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: POD
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13)

封裝: -

Request a Quote

DRAM

SDRAM - DDR4

8Gbit

POD

1.6 GHz

15ns

18 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13)

MT58L256L18P1T-5

Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 2.8 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封裝: -

Request a Quote

SRAM

4Mbit

Parallel

200 MHz

-

2.8 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

CY7C131-55NCT

Cypress Semiconductor Corp

IC SRAM 8KBIT PARALLEL 52PQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-BQFP
Supplier Device Package: 52-PQFP (10x10)

封裝: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

8Kbit

Parallel

-

55ns

55 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

52-BQFP

52-PQFP (10x10)

W631GG8MB09I-TR

Winbond Electronics

IC DRAM 1GBIT SSTL 15 78VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: SSTL_15
Clock Frequency: 1.066 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-VFBGA (8x10.5)

封裝: -

Request a Quote

DRAM

SDRAM - DDR3

1Gbit

SSTL_15

1.066 GHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-VFBGA (8x10.5)

GD5F1GQ4UFYIGY

GigaDevice Semiconductor (HK) Limited

IC FLASH 1GBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 120 MHz
Write Cycle Time - Word, Page: 700µs
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

封裝: -

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FLASH

FLASH - NAND

1Gbit

SPI - Quad I/O

120 MHz

700µs

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

MT40A2G16SKL-062E-B-TR

Micron Technology Inc.

IC DRAM 32GBIT PARALLEL 96FBGA

Memory Type: Non-Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: 13.75 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (10.5x13)

封裝: -

Request a Quote

DRAM

SDRAM - DDR4

32Gbit

Parallel

1.6 GHz

-

13.75 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (10.5x13)

GD25VQ80CTIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/QUAD I/O 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

FLASH

FLASH - NOR

8Mbit

SPI - Quad I/O

104 MHz

50µs, 3ms

-

2.3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP