頁 190 - 記憶體 | 積體電路 (IC) | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559 ext. 807
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

記憶體

記錄 62,144
頁  190/2,220
圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS29GL256S-10DHV013
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,984
FLASH
FLASH - NOR
256Mb (32M x 8)
Parallel
-
60ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
CG8233AA
Cypress Semiconductor Corp

IC SRAM MICROPOWER

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,424
-
-
-
-
-
-
-
-
-
-
-
-
MT42L64M64D2LL-18 WT:C TR
Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 4Gb (64M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.3 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,016
DRAM
SDRAM - Mobile LPDDR2
4Gb (64M x 64)
Parallel
533MHz
-
-
1.14 V ~ 1.3 V
-30°C ~ 85°C (TC)
-
-
-
MT29F32G08CBECBL73A3WC1
Micron Technology Inc.

IC FLASH 32GBIT WAFER

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存2,112
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
Die
Die
N25Q064A13ESF41F TR
Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (16M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO W
封裝: 16-SOIC (0.295", 7.50mm Width)
庫存5,984
FLASH
FLASH - NOR
64Mb (16M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SO W
M58LT128KST8ZA6F TR
Micron Technology Inc.

IC FLASH 128MBIT 85NS 64TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 52MHz
  • Write Cycle Time - Word, Page: 85ns
  • Access Time: 85ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-TBGA (10x13)
封裝: 64-TBGA
庫存7,392
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
52MHz
85ns
85ns
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-TBGA (10x13)
CY7C1021BN-12VXIT
Cypress Semiconductor Corp

IC SRAM 1MBIT 12NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
封裝: 44-BSOJ (0.400", 10.16mm Width)
庫存2,576
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
MT48H8M32LFF5-10 TR
Micron Technology Inc.

IC SDRAM 256MBIT 100MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封裝: 90-VFBGA
庫存6,224
DRAM
SDRAM - Mobile LPSDR
256Mb (8M x 32)
Parallel
100MHz
15ns
7ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
AT29C257-20JI
Microchip Technology

IC FLASH 256KBIT 200NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 200ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封裝: 32-LCC (J-Lead)
庫存7,712
FLASH
FLASH
256Kb (32K x 8)
Parallel
-
10ms
200ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
7134LA35FB
IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 35NS 48FPACK

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-FlatPack
  • Supplier Device Package: 48-FPACK
封裝: 48-FlatPack
庫存6,624
SRAM
SRAM - Dual Port, Asynchronous
32Kb (4K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Surface Mount
48-FlatPack
48-FPACK
CY14B101Q3-SFXI
Cypress Semiconductor Corp

NON VOLATILE SRAMS

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,064
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
SPI
40MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
AT88SC0104CA-MPTG
Microchip Technology

IC EEPROM 1KBIT 4MHZ M2P

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 4MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 250ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: M2 P, Smart Card Module (TWI)
  • Supplier Device Package: M2 - P Module (TWI)
封裝: M2 P, Smart Card Module (TWI)
庫存6,080
EEPROM
EEPROM
1Kb (128 x 8)
I2C
4MHz
5ms
250ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
M2 P, Smart Card Module (TWI)
M2 - P Module (TWI)
hot 71V016SA12PHG8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存15,024
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS64WV25616EDBLL-10BLA3
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 48TFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
封裝: 48-TFBGA
庫存12,612
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
MT29F128G08AMCDBJ5-6ITR:D
Micron Technology Inc.

IC FLASH 128G PARALLEL 167MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,800
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
S29GL128P11FFIS13
Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
封裝: 64-LBGA
庫存4,656
FLASH
FLASH - NOR
128Mb (16M x 8)
Parallel
-
110ns
110ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
MB85RS128TYPNF-GS-BCERE1
Fujitsu Electronics America, Inc.

IC FRAM 128K SPI 33MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存5,760
FRAM
FRAM (Ferroelectric RAM)
128Kb (16K x 8)
SPI
33MHz
-
-
1.8 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
BR25G320FJ-3GE2
Rohm Semiconductor

SPI BUS EEPROM

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存6,048
EEPROM
EEPROM
32Kb (4K x 8)
SPI
20MHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
S98WS512P00FW0040
Cypress Semiconductor Corp

IC GATE NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,440
-
-
-
-
-
-
-
-
-
-
-
-
IS65WV1288FBLL-45TLA3
ISSI, Integrated Silicon Solution Inc

IC SRAM 1M PARALLEL 32TSOP I

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
封裝: 32-TFSOP (0.724", 18.40mm Width)
庫存2,720
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
MT61M256M32JE-12 N:A TR
Micron Technology Inc.

IC RAM 8G PARALLEL 1.5GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: RAM
  • Technology: SGRAM - GDDR6
  • Memory Size: 8Gb (256M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 1.5GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.21 V ~ 1.29 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 180-TFBGA
  • Supplier Device Package: -
封裝: 180-TFBGA
庫存6,768
RAM
SGRAM - GDDR6
8Gb (256M x 32)
Parallel
1.5GHz
-
-
1.21 V ~ 1.29 V
0°C ~ 95°C (TC)
Surface Mount
180-TFBGA
-
70V9359L9PFI8
IDT, Integrated Device Technology Inc

IC SRAM 144K PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 144Kb (8K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 9ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存6,000
SRAM
SRAM - Dual Port, Synchronous
144Kb (8K x 18)
Parallel
-
-
9ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MTFC16GAKAENA-4M IT TR
Micron Technology Inc.

IC FLASH 128G MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TBGA
  • Supplier Device Package: 100-TBGA (14x18)
封裝: 100-TBGA
庫存14,664
FLASH
FLASH - NAND
128Gb (16G x 8)
MMC
-
-
-
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
100-TBGA
100-TBGA (14x18)
MT29F1T08EEHBFJ4-R-B-TR
Micron Technology Inc.

IC FLASH 1TBIT PARALLEL 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 1Tbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 132-VBGA
  • Supplier Device Package: 132-VBGA (12x18)
封裝: -
Request a Quote
FLASH
FLASH - NAND (TLC)
1Tbit
Parallel
-
-
-
1.7V ~ 1.95V
0°C ~ 70°C (TA)
Surface Mount
132-VBGA
132-VBGA (12x18)
GD25WD05CK6IGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 512KBIT SPI/DUAL 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Kbit
  • Memory Interface: SPI - Dual I/O
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: 55µs, 6ms
  • Access Time: 12 ns
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFDFN Exposed Pad
  • Supplier Device Package: 8-USON (1.5x1.5)
封裝: -
Request a Quote
FLASH
FLASH - NOR (SLC)
512Kbit
SPI - Dual I/O
100 MHz
55µs, 6ms
12 ns
1.65V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-XFDFN Exposed Pad
8-USON (1.5x1.5)
W631GG6NB15J
Winbond Electronics

IC DRAM 1GBIT SSTL 15 96VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: SSTL_15
  • Clock Frequency: 667 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-VFBGA (7.5x13)
封裝: -
Request a Quote
DRAM
SDRAM - DDR3
1Gbit
SSTL_15
667 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 105°C (TC)
Surface Mount
96-VFBGA
96-VFBGA (7.5x13)
IS46TR16128DL-125KBLA25
ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 115°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
封裝: -
Request a Quote
DRAM
SDRAM - DDR3L
2Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 115°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
BR93G66NUX-3ATTR
Rohm Semiconductor

IC EEPROM 4KBIT VSON008X2030

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 3 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: VSON008X2030
封裝: -
庫存12,000
EEPROM
EEPROM
4Kbit
Microwire
3 MHz
5ms
-
1.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
VSON008X2030