頁 1609 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F1T08CPCCBH8-6R:C TR	Micron Technology Inc.	IC FLASH 1TBIT 167MHZ 152LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,288	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT49H32M18CFM-18:B	Micron Technology Inc.	IC RLDRAM 576MBIT 533MHZ 144UBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: 15ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-µBGA (18.5x11)	封裝: 144-TFBGA	庫存7,648	DRAM	DRAM	576Mb (32M x 18)	Parallel	533MHz	-	15ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-µBGA (18.5x11)
MT29F512G08CMEABH7-12:A TR	Micron Technology Inc.	IC FLASH 512GBIT 83MHZ 152TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,480	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
CG7965AA	Cypress Semiconductor Corp	IC SRAM 100TQFP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,480	-	-	-	-	-	-	-	-	-	-	-	-
AT25DF011-MAHN-Y	Adesto Technologies	IC FLASH 1MBIT 85MHZ 8UDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 8µs, 3.5ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封裝: 8-UFDFN Exposed Pad	庫存3,408	FLASH	FLASH	1Mb (128K x 8)	SPI	104MHz	8µs, 3.5ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
MT29RZ1CVCZZHGTN-25 W.4M0	Micron Technology Inc.	IC FLASH 1.5G DDR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,224	-	-	-	-	-	-	-	-	-	-	-	-
70P3519S200BCG	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 200MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	封裝: 256-LBGA	庫存3,168	SRAM	SRAM - Dual Port, Synchronous	9Mb (256K x 36)	Parallel	200MHz	-	3.4ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
M29W400DB55ZE6E	Micron Technology Inc.	IC FLASH 4MBIT 55NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x9)	封裝: 48-TFBGA	庫存2,752	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	55ns	55ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x9)
AT49LD3200B-20TI	Microchip Technology	IC FLASH 32MBIT 50MHZ 86TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (1M x 32, 2M x 16) Memory Interface: Parallel Clock Frequency: 50MHz Write Cycle Time - Word, Page: - Access Time: 170ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	封裝: 86-TFSOP (0.400", 10.16mm Width)	庫存4,336	FLASH	FLASH	32Mb (1M x 32, 2M x 16)	Parallel	50MHz	-	170ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
AT28HC256-90JA	Microchip Technology	IC EEPROM 256KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存3,600	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	90ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
CYD18S72V18-200BGI	Cypress Semiconductor Corp	IC SRAM 18MBIT 200MHZ 484FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 18Mb (256K x 72) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.3ns Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 484-FBGA Supplier Device Package: 484-FBGA (23x23)	封裝: 484-FBGA	庫存7,168	SRAM	SRAM - Dual Port, Synchronous	18Mb (256K x 72)	Parallel	200MHz	-	3.3ns	1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	484-FBGA	484-FBGA (23x23)
IS61VVF409618B-7.5TQL-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 72MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	封裝: 100-LQFP	庫存5,440	SRAM	SRAM - Synchronous	72Mb (4M x 18)	Parallel	117MHz	-	7.5ns	1.71 V ~ 1.89 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
70V3319S166PRFG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.6ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	封裝: 128-LQFP	庫存3,408	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	166MHz	-	3.6ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
7027L20PF	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 20NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存4,128	SRAM	SRAM - Dual Port, Asynchronous	512Kb (32K x 16)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
CY7C1411KV18-250BZC	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (4M x 8) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存7,936	SRAM	SRAM - Synchronous, QDR II	36Mb (4M x 8)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CY14B101LA-BA45XIT	Cypress Semiconductor Corp	IC NVSRAM 1MBIT 45NS 48FBGA Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-FBGA (6x10)	封裝: 48-TFBGA	庫存7,088	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-FBGA (6x10)
IS43TR81280BL-107MBL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 933MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	封裝: 78-TFBGA	庫存4,064	DRAM	SDRAM - DDR3L	1Gb (128M x 8)	Parallel	933MHz	15ns	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
MT48LC2M32B2P-6A AAT:J	Micron Technology Inc.	IC SDRAM 64MBIT 167MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	封裝: 86-TFSOP (0.400", 10.16mm Width)	庫存4,208	DRAM	SDRAM	64Mb (2M x 32)	Parallel	167MHz	12ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
7025L55PF	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 55NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存4,608	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
S25FL132K0XNFIQ11	Cypress Semiconductor Corp	IC FLASH 32MBIT108MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (5x6)	封裝: 8-WDFN Exposed Pad	庫存15,504	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI - Quad I/O	108MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (5x6)
S29GL01GS11TFI020	Cypress Semiconductor Corp	IC FLASH 1G PARALLEL 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	封裝: 56-TFSOP (0.724", 18.40mm Width)	庫存6,780	FLASH	FLASH - NOR	1Gb (64M x 16)	Parallel	-	60ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
IS61VF51236A-7.5B3I	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封裝: 165-TBGA	庫存7,168	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	117MHz	-	7.5ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
CG7892AAT	Cypress Semiconductor Corp	IC SRAM SYNC 100TQFP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,520	-	-	-	-	-	-	-	-	-	-	-	-
CG7880AA	Cypress Semiconductor Corp	IC SRAM MICROPOWER 28TSOP I Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,176	-	-	-	-	-	-	-	-	-	-	-	-
CG9068AM	Infineon Technologies	IC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GVT71512ZC18T-7-5	Galvantech	STANDARD SRAM, 512KX18 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SST26VF040AT-104I-SN	Microchip Technology	IC FLASH 4MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	庫存20,412	FLASH	FLASH	4Mbit	SPI - Quad I/O	104 MHz	1.5ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
UPD46184184BF1-E40-EQ1-A	Renesas Electronics Corporation	DDR SRAM, 1MX18, 0.45NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

MT29F1T08CPCCBH8-6R:C TR

Micron Technology Inc.

IC FLASH 1TBIT 167MHZ 152LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,288

FLASH

FLASH - NAND

1Tb (128G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT49H32M18CFM-18:B

Micron Technology Inc.

IC RLDRAM 576MBIT 533MHZ 144UBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: 15ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-µBGA (18.5x11)

封裝: 144-TFBGA

庫存7,648

DRAM

576Mb (32M x 18)

Parallel

533MHz

-

15ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-µBGA (18.5x11)

MT29F512G08CMEABH7-12:A TR

Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 152TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,480

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

CG7965AA

Cypress Semiconductor Corp

IC SRAM 100TQFP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,480

-

AT25DF011-MAHN-Y

Adesto Technologies

IC FLASH 1MBIT 85MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 8µs, 3.5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封裝: 8-UFDFN Exposed Pad

庫存3,408

FLASH

1Mb (128K x 8)

SPI

104MHz

8µs, 3.5ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

MT29RZ1CVCZZHGTN-25 W.4M0

Micron Technology Inc.

IC FLASH 1.5G DDR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,224

-

70P3519S200BCG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 200MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

封裝: 256-LBGA

庫存3,168

SRAM

SRAM - Dual Port, Synchronous

9Mb (256K x 36)

Parallel

200MHz

-

3.4ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

M29W400DB55ZE6E

Micron Technology Inc.

IC FLASH 4MBIT 55NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x9)

封裝: 48-TFBGA

庫存2,752

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

55ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x9)

AT49LD3200B-20TI

Microchip Technology

IC FLASH 32MBIT 50MHZ 86TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (1M x 32, 2M x 16)
Memory Interface: Parallel
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: -
Access Time: 170ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

封裝: 86-TFSOP (0.400", 10.16mm Width)

庫存4,336

FLASH

32Mb (1M x 32, 2M x 16)

Parallel

50MHz

-

170ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

AT28HC256-90JA

Microchip Technology

IC EEPROM 256KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存3,600

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

90ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

CYD18S72V18-200BGI

Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 484FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 18Mb (256K x 72)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.3ns
Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 484-FBGA
Supplier Device Package: 484-FBGA (23x23)

封裝: 484-FBGA

庫存7,168

SRAM

SRAM - Dual Port, Synchronous

18Mb (256K x 72)

Parallel

200MHz

-

3.3ns

1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

484-FBGA

484-FBGA (23x23)

IS61VVF409618B-7.5TQL-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 72MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

封裝: 100-LQFP

庫存5,440

SRAM

SRAM - Synchronous

72Mb (4M x 18)

Parallel

117MHz

-

7.5ns

1.71 V ~ 1.89 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

70V3319S166PRFG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.6ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

封裝: 128-LQFP

庫存3,408

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

166MHz

-

3.6ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

7027L20PF

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 20NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存4,128

SRAM

SRAM - Dual Port, Asynchronous

512Kb (32K x 16)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

CY7C1411KV18-250BZC

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (4M x 8)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存7,936

SRAM

SRAM - Synchronous, QDR II

36Mb (4M x 8)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CY14B101LA-BA45XIT

Cypress Semiconductor Corp

IC NVSRAM 1MBIT 45NS 48FBGA

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)

封裝: 48-TFBGA

庫存7,088

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

Parallel

-

45ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-FBGA (6x10)

IS43TR81280BL-107MBL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 933MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

封裝: 78-TFBGA

庫存4,064

DRAM

SDRAM - DDR3L

1Gb (128M x 8)

Parallel

933MHz

15ns

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

MT48LC2M32B2P-6A AAT:J

Micron Technology Inc.

IC SDRAM 64MBIT 167MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

封裝: 86-TFSOP (0.400", 10.16mm Width)

庫存4,208

DRAM

SDRAM

64Mb (2M x 32)

Parallel

167MHz

12ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

7025L55PF

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存4,608

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

S25FL132K0XNFIQ11

Cypress Semiconductor Corp

IC FLASH 32MBIT108MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (5x6)

封裝: 8-WDFN Exposed Pad

庫存15,504

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI - Quad I/O

108MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (5x6)

S29GL01GS11TFI020

Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

封裝: 56-TFSOP (0.724", 18.40mm Width)

庫存6,780

FLASH

FLASH - NOR

1Gb (64M x 16)

Parallel

-

60ns

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

IS61VF51236A-7.5B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

庫存7,168

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

117MHz

-

7.5ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

CG7892AAT

Cypress Semiconductor Corp

IC SRAM SYNC 100TQFP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,520

-

CG7880AA

Cypress Semiconductor Corp

IC SRAM MICROPOWER 28TSOP I

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,176

-

CG9068AM

Infineon Technologies

IC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

GVT71512ZC18T-7-5

Galvantech

STANDARD SRAM, 512KX18

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

SST26VF040AT-104I-SN

Microchip Technology

IC FLASH 4MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

庫存20,412

FLASH

4Mbit

SPI - Quad I/O

104 MHz

1.5ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

UPD46184184BF1-E40-EQ1-A

Renesas Electronics Corporation

DDR SRAM, 1MX18, 0.45NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

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