頁 1577 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SST25VF064C-80-4I-Q2AE-T	Microchip Technology	IC FLASH 64MBIT 80MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Dual I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: 2.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	封裝: 8-WDFN Exposed Pad	庫存6,912	FLASH	FLASH	64Mb (8M x 8)	SPI - Dual I/O	80MHz	2.5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
N25Q008A11EF640E	Micron Technology Inc.	IC FLASH 1MX8 SLC SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,376	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	108MHz	8ms, 5ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	-	-	-
MT42L32M16D1AB-3 WT:A	Micron Technology Inc.	IC SDRAM 512MBIT 333MHZ 121FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 121-WFBGA Supplier Device Package: 121-FBGA (6.5x8)	封裝: 121-WFBGA	庫存2,624	DRAM	SDRAM - Mobile LPDDR2	512Mb (32M x 16)	Parallel	333MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	121-WFBGA	121-FBGA (6.5x8)
93LC76B-I/MS	Microchip Technology	IC EEPROM 8KBIT 3MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (512 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存2,528	EEPROM	EEPROM	8Kb (512 x 16)	SPI	3MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
MT46H8M32LFB5-5:H	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	封裝: 90-VFBGA	庫存132,000	DRAM	SDRAM - Mobile LPDDR	256Mb (8M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
IDT71V25761YSA166BQI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封裝: 165-TBGA	庫存3,344	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IS42S16800D-75EBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-MiniBGA (8x13)	封裝: 54-VFBGA	庫存3,216	DRAM	SDRAM	128Mb (8M x 16)	Parallel	133MHz	-	6.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-VFBGA	54-MiniBGA (8x13)
MT47H128M8B7-5E L:A TR	Micron Technology Inc.	IC SDRAM 1GBIT 266MHZ 92FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 600ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 92-VFBGA Supplier Device Package: 92-FBGA (11x19)	封裝: 92-VFBGA	庫存7,920	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	200MHz	15ns	600ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	92-VFBGA	92-FBGA (11x19)
AT24HC02B-PU	Microchip Technology	IC EEPROM 2KBIT 1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存5,808	EEPROM	EEPROM	2Kb (256 x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
7132SA25L48B	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 25NS 48LCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-LCC Supplier Device Package: 48-LCC (14.22x14.22)	封裝: 48-LCC	庫存3,456	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Surface Mount	48-LCC	48-LCC (14.22x14.22)
MT46V32M16CY-5B IT:J	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x12.5)	封裝: 60-TFBGA	庫存6,080	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-FBGA (8x12.5)
W98AD2KBJX6I TR	Winbond Electronics	1GB MSDR X32 166MHZ IND Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,848	-	-	-	-	-	-	-	-	-	-	-	-
93C56B-E/SN	Microchip Technology	IC EEPROM 2KBIT 2MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,280	EEPROM	EEPROM	2Kb (128 x 16)	SPI	2MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CAT24C03WI-G	ON Semiconductor	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,320	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CAT24C04C5ATR	ON Semiconductor	IC EEPROM 4KBIT 400KHZ 5WLCSP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 5-XFBGA, WLCSP Supplier Device Package: 5-WLCSP	封裝: 5-XFBGA, WLCSP	庫存5,200	EEPROM	EEPROM	4Kb (512 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	5-XFBGA, WLCSP	5-WLCSP
CAT25256YI-G	ON Semiconductor	IC EEPROM 256KBIT 10MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存9,972	EEPROM	EEPROM	256Kb (32K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY62128EV30LL-45ZXI	Cypress Semiconductor Corp	IC SRAM 1MBIT 45NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP I	封裝: 32-TFSOP (0.724", 18.40mm Width)	庫存39,156	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP I
34AA04-I/P	Microchip Technology	IC EEPROM 4KBIT 1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 350ns Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存12,090	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I2C	1MHz	5ms	350ns	1.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
BR24S128FVT-WE2	Rohm Semiconductor	IC EEPROM 128K 400KHZ 8TSSOP-B Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存29,538	EEPROM	EEPROM	128Kb (16K x 8)	I2C	400kHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
CY62177EV18LL-70BAXI	Cypress Semiconductor Corp	IC SRAM 32MBIT 70NS 48FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.65 V ~ 2.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-FBGA (8x9.5)	封裝: 48-TFBGA	庫存6,060	SRAM	SRAM - Asynchronous	32Mb (4M x 8, 2M x 16)	Parallel	-	70ns	70ns	1.65 V ~ 2.25 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-FBGA (8x9.5)
AT28BV64B-20JU-T	Microchip Technology	IC EEPROM 64K PARALLEL 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 200ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存7,712	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	10ms	200ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
S99-50340	Cypress Semiconductor Corp	IC GATE NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,848	-	-	-	-	-	-	-	-	-	-	-	-
IS61NLF25672-6.5B1I	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 209LFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (256K x 72) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 209-BGA Supplier Device Package: 209-LFBGA (14x22)	封裝: 209-BGA	庫存3,264	SRAM	SRAM - Synchronous	18Mb (256K x 72)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	209-BGA	209-LFBGA (14x22)
IS61NLP25672-250B1I-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 209LFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (256K x 72) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.6ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 209-BGA Supplier Device Package: 209-LFBGA (14x22)	封裝: 209-BGA	庫存6,624	SRAM	SRAM - Synchronous	18Mb (256K x 72)	Parallel	250MHz	-	2.6ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	209-BGA	209-LFBGA (14x22)
24FC04-E/P	Microchip Technology	4KB I2C EEPROM 1MHZ 1.7-5.5V 8-P Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存6,464	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I²C	1MHz	5ms	450ns	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
MT29F2T08EMHBFJ4-R-B-TR	Micron Technology Inc.	IC FLASH 2TBIT PARALLEL 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 2Tbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	封裝: -	Request a Quote	FLASH	FLASH - NAND (TLC)	2Tbit	Parallel	-	-	-	1.7V ~ 1.95V	0°C ~ 70°C (TA)	Surface Mount	132-VBGA	132-VBGA (12x18)
MTFC128GBCAQTC-AIT	Micron Technology Inc.	MM20G EMMC 1TBIT 153/196 LFBGA I Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存1,500	-	-	-	-	-	-	-	-	-	-	-	-
S70KS1283GABHA023	Infineon Technologies	IC PSRAM 128MBIT SPI/OCTL 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 128Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封裝: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	128Mbit	SPI - Octal I/O	200 MHz	35ns	35 ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)

SST25VF064C-80-4I-Q2AE-T

Microchip Technology

IC FLASH 64MBIT 80MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Dual I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 2.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

封裝: 8-WDFN Exposed Pad

庫存6,912

FLASH

64Mb (8M x 8)

SPI - Dual I/O

80MHz

2.5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

N25Q008A11EF640E

Micron Technology Inc.

IC FLASH 1MX8 SLC SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,376

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

108MHz

8ms, 5ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

-

MT42L32M16D1AB-3 WT:A

Micron Technology Inc.

IC SDRAM 512MBIT 333MHZ 121FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 121-WFBGA
Supplier Device Package: 121-FBGA (6.5x8)

封裝: 121-WFBGA

庫存2,624

DRAM

SDRAM - Mobile LPDDR2

512Mb (32M x 16)

Parallel

333MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

121-WFBGA

121-FBGA (6.5x8)

93LC76B-I/MS

Microchip Technology

IC EEPROM 8KBIT 3MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (512 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存2,528

EEPROM

8Kb (512 x 16)

SPI

3MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

MT46H8M32LFB5-5:H

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

封裝: 90-VFBGA

庫存132,000

DRAM

SDRAM - Mobile LPDDR

256Mb (8M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

IDT71V25761YSA166BQI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封裝: 165-TBGA

庫存3,344

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IS42S16800D-75EBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-MiniBGA (8x13)

封裝: 54-VFBGA

庫存3,216

DRAM

SDRAM

128Mb (8M x 16)

Parallel

133MHz

-

6.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-VFBGA

54-MiniBGA (8x13)

MT47H128M8B7-5E L:A TR

Micron Technology Inc.

IC SDRAM 1GBIT 266MHZ 92FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 600ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 92-VFBGA
Supplier Device Package: 92-FBGA (11x19)

封裝: 92-VFBGA

庫存7,920

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

200MHz

15ns

600ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

92-VFBGA

92-FBGA (11x19)

AT24HC02B-PU

Microchip Technology

IC EEPROM 2KBIT 1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存5,808

EEPROM

2Kb (256 x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

7132SA25L48B

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 48LCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LCC
Supplier Device Package: 48-LCC (14.22x14.22)

封裝: 48-LCC

庫存3,456

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Surface Mount

48-LCC

48-LCC (14.22x14.22)

MT46V32M16CY-5B IT:J

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x12.5)

封裝: 60-TFBGA

庫存6,080

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-FBGA (8x12.5)

W98AD2KBJX6I TR

Winbond Electronics

1GB MSDR X32 166MHZ IND

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,848

-

93C56B-E/SN

Microchip Technology

IC EEPROM 2KBIT 2MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,280

EEPROM

2Kb (128 x 16)

SPI

2MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CAT24C03WI-G

ON Semiconductor

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,320

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CAT24C04C5ATR

ON Semiconductor

IC EEPROM 4KBIT 400KHZ 5WLCSP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-XFBGA, WLCSP
Supplier Device Package: 5-WLCSP

封裝: 5-XFBGA, WLCSP

庫存5,200

EEPROM

4Kb (512 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

5-XFBGA, WLCSP

5-WLCSP

CAT25256YI-G

ON Semiconductor

IC EEPROM 256KBIT 10MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存9,972

EEPROM

256Kb (32K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY62128EV30LL-45ZXI

Cypress Semiconductor Corp

IC SRAM 1MBIT 45NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I

封裝: 32-TFSOP (0.724", 18.40mm Width)

庫存39,156

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP I

34AA04-I/P

Microchip Technology

IC EEPROM 4KBIT 1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 350ns
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存12,090

EEPROM

4Kb (256 x 8 x 2)

I2C

1MHz

5ms

350ns

1.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

BR24S128FVT-WE2

Rohm Semiconductor

IC EEPROM 128K 400KHZ 8TSSOP-B

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存29,538

EEPROM

128Kb (16K x 8)

I2C

400kHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

CY62177EV18LL-70BAXI

Cypress Semiconductor Corp

IC SRAM 32MBIT 70NS 48FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.65 V ~ 2.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (8x9.5)

封裝: 48-TFBGA

庫存6,060

SRAM

SRAM - Asynchronous

32Mb (4M x 8, 2M x 16)

Parallel

-

70ns

1.65 V ~ 2.25 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-FBGA (8x9.5)

AT28BV64B-20JU-T

Microchip Technology

IC EEPROM 64K PARALLEL 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 200ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存7,712

EEPROM

64Kb (8K x 8)

Parallel

-

10ms

200ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

S99-50340

Cypress Semiconductor Corp

IC GATE NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,848

-

IS61NLF25672-6.5B1I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 209LFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (256K x 72)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 209-BGA
Supplier Device Package: 209-LFBGA (14x22)

封裝: 209-BGA

庫存3,264

SRAM

SRAM - Synchronous

18Mb (256K x 72)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

209-BGA

209-LFBGA (14x22)

IS61NLP25672-250B1I-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 209LFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (256K x 72)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.6ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 209-BGA
Supplier Device Package: 209-LFBGA (14x22)

封裝: 209-BGA

庫存6,624

SRAM

SRAM - Synchronous

18Mb (256K x 72)

Parallel

250MHz

-

2.6ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

209-BGA

209-LFBGA (14x22)

24FC04-E/P

Microchip Technology

4KB I2C EEPROM 1MHZ 1.7-5.5V 8-P

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存6,464

EEPROM

4Kb (256 x 8 x 2)

I²C

1MHz

5ms

450ns

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

MT29F2T08EMHBFJ4-R-B-TR

Micron Technology Inc.

IC FLASH 2TBIT PARALLEL 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 2Tbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

封裝: -

Request a Quote

FLASH

FLASH - NAND (TLC)

2Tbit

Parallel

-

1.7V ~ 1.95V

0°C ~ 70°C (TA)

Surface Mount

132-VBGA

132-VBGA (12x18)

MTFC128GBCAQTC-AIT

Micron Technology Inc.

MM20G EMMC 1TBIT 153/196 LFBGA I

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存1,500

-

S70KS1283GABHA023

Infineon Technologies

IC PSRAM 128MBIT SPI/OCTL 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 128Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封裝: -

Request a Quote

PSRAM

PSRAM (Pseudo SRAM)

128Mbit

SPI - Octal I/O

200 MHz

35ns

35 ns

1.7V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)