記憶體

MT41K512M8RH-125 AAT:E TR

Micron Technology Inc.

IC SDRAM 4GBIT 800MHZ 78FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.75ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (9x10.5)

封裝: 78-TFBGA

MT42L16M32D1LG-25 AAT:A

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 168WFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 168-WFBGA
• Supplier Device Package: 168-WFBGA (12x12)

封裝: 168-WFBGA

DS28E22Q+U

Maxim Integrated

IC EEPROM 2KBIT 1WIRE 6DFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Kb (2K x 1)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: 2.97 V ~ 3.63 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-TDFN-EP (3x3)

封裝: 6-WDFN Exposed Pad

R1EX24032ASAS0I#S0

Renesas Electronics America

IC EEPROM 32KBIT 400KHZ 8SOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 32Kb (4K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: 900ns
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

CYDMX064B16-65BVXI

Cypress Semiconductor Corp

IC SRAM 64KBIT 65NS 100VFBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, MoBL
• Memory Size: 64Kb (4K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 65ns
• Access Time: 65ns
• Voltage - Supply: 1.8 V ~ 3.3 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-VFBGA
• Supplier Device Package: 100-VFBGA (6x6)

封裝: 100-VFBGA

NAND16GW3D2BN6E

Micron Technology Inc.

IC FLASH 16GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 16Gb (2G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

MT47H64M16HR-3:G TR

Micron Technology Inc.

IC SDRAM 1GBIT 333MHZ 84FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 450ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 84-TFBGA
• Supplier Device Package: 84-FBGA (8x12.5)

封裝: 84-TFBGA

71V432S6PFG

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 6NS 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 1Mb (32K x 32)
• Memory Interface: Parallel
• Clock Frequency: 83MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6ns
• Voltage - Supply: 3.135 V ~ 3.63 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

IDT71V416VS12PHG8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mb (256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 12ns
• Access Time: 12ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

S-24CS16A0I-D8S1G

SII Semiconductor Corporation

IC EEPROM 16KBIT 400KHZ 8DIP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 10ms
• Access Time: 900ns
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

封裝: 8-DIP (0.300", 7.62mm)

MT46V32M8FG-75E:G

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 60FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 750ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-FBGA
• Supplier Device Package: 60-FBGA (8x14)

封裝: 60-FBGA

AT49F512-90VC

Microchip Technology

IC FLASH 512KBIT 90NS 32VSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 512Kb (64K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 50µs
• Access Time: 90ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 32-TFSOP (0.488", 12.40mm Width)
• Supplier Device Package: 32-VSOP

封裝: 32-TFSOP (0.488", 12.40mm Width)

M29F800DB70N6

Micron Technology Inc.

IC FLASH 8MBIT 70NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 8Mb (1M x 8, 512K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

MT29F256G08CJAAAWP-Z:A TR

Micron Technology Inc.

IC FLASH 256GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

71V65703S85BGG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8.5NS 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 8.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

71V67603S150BGGI8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 150MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.8ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BGA
• Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

71V3558SA100BQG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 100MHZ 165CABGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous ZBT
• Memory Size: 4.5Mb (256K x 18)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-CABGA (13x15)

封裝: 165-TBGA

MT29F2G16ABBEAHC-AIT:E TR

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

23A1024T-I/ST

Microchip Technology

IC SRAM 1MBIT 20MHZ 8TSSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM
• Memory Size: 1Mb (128K x 8)
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 20MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2.2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

CY15B016J-SXE

Cypress Semiconductor Corp

F-RAM MEMORY SERIAL

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 16Kb (2K x 8)
• Memory Interface: I2C
• Clock Frequency: 1MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

S25FL132K0XBHIS20

Cypress Semiconductor Corp

IC FLASH 32MBIT 108MHZ 24BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mb (4M x 8)
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 3ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (6x8)

封裝: 24-TBGA

25LC080DT-I/MS

Microchip Technology

IC EEPROM 8KBIT 10MHZ 8MSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 8Kb (1K x 8)
• Memory Interface: SPI
• Clock Frequency: 10MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

24LC01BT-I/MC

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8DFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (128 x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: 3500ns
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VFDFN Exposed Pad
• Supplier Device Package: 8-DFN (2x3)

封裝: 8-VFDFN Exposed Pad

MX25U25635FZ4I-08G

Macronix

IC FLASH 256MBIT

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

GD25Q256EWIGR

GigaDevice Semiconductor (HK) Limited

256MBIT, 3.3V, WSON8 6*5MM, INDU

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 256Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: 90µs, 2ms
• Access Time: 7 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (5x6)

封裝: -

MT29F2T08GELBEJ4-B-TR

Micron Technology Inc.

IC FLASH 2TBIT PARALLEL 132VBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND (TLC)
• Memory Size: 2Tbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 132-VBGA
• Supplier Device Package: 132-VBGA (12x18)

封裝: -

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CAT25640VE-GT3E

onsemi

IC EEPROM 64KBIT SPI 10MHZ 8SOIC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 64Kbit
• Memory Interface: SPI
• Clock Frequency: 10 MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封裝: -

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MT54W512H36JF-6

Micron Technology Inc.

IC SRAM 18MBIT PAR 165FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Quad Port, Synchronous
• Memory Size: 18Mbit
• Memory Interface: Parallel
• Clock Frequency: 167 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6 ns
• Voltage - Supply: 1.7V ~ 1.9V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-FBGA (13x15)

封裝: -

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