頁 1267 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
QMP29GL01GP12FFI010	Cypress Semiconductor Corp	IC FLASH 1GBIT 120NS 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	封裝: 64-LBGA	庫存3,488	FLASH	FLASH - NOR	1Gb (128M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
AT45DB081D-MU-SL383	Adesto Technologies	IC FLASH 8MBIT 66MHZ 8VDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (264 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFN (6x5)	封裝: 8-VDFN Exposed Pad	庫存2,912	FLASH	FLASH	8Mb (264 Bytes x 4096 pages)	SPI	66MHz	4ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-VDFN Exposed Pad	8-VDFN (6x5)
IDT71V65703S75PF	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存14,592	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	-	-	7.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71V016SA10YI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 10NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.15 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	封裝: 44-BSOJ (0.400", 10.16mm Width)	庫存3,888	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	10ns	10ns	3.15 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
AT49F040A-55TU-T	Microchip Technology	IC FLASH 4MBIT 55NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 40µs Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	封裝: 32-TFSOP (0.724", 18.40mm Width)	庫存5,968	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	40µs	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
AT24C02AN-10SC	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,456	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT53B512M64D4TX-053 WT:C TR	Micron Technology Inc.	IC SDRAM 32GBIT 1.866GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,936	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
71T75602S166BGGI	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 166MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存5,728	SRAM	SRAM - Synchronous ZBT	18Mb (512K x 36)	Parallel	166MHz	-	3.5ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS42VM32200M-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: 90-TFBGA	庫存4,368	DRAM	SDRAM - Mobile	64Mb (2M x 32)	Parallel	166MHz	-	5.5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
SST26VF016BT-104V/MF	Microchip Technology	IC FLASH 16MBIT 104MHZ 8TDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WDFN (5x6)	封裝: 8-WDFN Exposed Pad	庫存5,616	FLASH	FLASH	16Mb (2M x 8)	SPI - Quad I/O	104MHz	1.5ms	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WDFN (5x6)
25AA256-E/P	Microchip Technology	IC EEPROM 256KBIT 10MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存4,912	EEPROM	EEPROM	256Kb (32K x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 125°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
93LC66CT-E/MS	Microchip Technology	IC EEPROM 4KBIT 3MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8, 256 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存4,784	EEPROM	EEPROM	4Kb (512 x 8, 256 x 16)	SPI	3MHz	6ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
24AA024T-I/MC	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x3)	封裝: 8-VFDFN Exposed Pad	庫存12,612	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x3)
BR34L02FVT-WE2	Rohm Semiconductor	IC EEPROM 2KBIT 400KHZ 8TSSOP-B Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存1,296,000	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
CY7C1470BV33-167BZI	Cypress Semiconductor Corp	IC SRAM 72MBIT 167MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封裝: 165-LBGA	庫存7,568	SRAM	SRAM - Synchronous	72Mb (2M x 36)	Parallel	167MHz	-	3.4ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
MT29F4G08ABAFAH4-AATES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,784	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
NM93C56LZM8	ON Semiconductor	IC EEPROM 2K SPI 250KHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (128 x 16) Memory Interface: SPI Clock Frequency: 250kHz Write Cycle Time - Word, Page: 15ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,488	EEPROM	EEPROM	2Kb (128 x 16)	SPI	250kHz	15ms	-	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IS46TR16640B-125JBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: 96-TFBGA	庫存5,088	DRAM	SDRAM - DDR3	1Gb (64M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR82560C-15HBLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	封裝: 78-TFBGA	庫存6,336	DRAM	SDRAM - DDR3	2Gb (256M x 8)	Parallel	667MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
S25FL256SAGBHMC03	Cypress Semiconductor Corp	IC 256 MB FLASH MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封裝: 24-TBGA	庫存6,784	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)
DS28CN01U-W0D+1T-C	Maxim Integrated	IC INTERFACE MISC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 1.62 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-uMAX	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存2,496	EEPROM	EEPROM	1Kb (128 x 8)	I²C	400kHz	10ms	-	1.62 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-uMAX
MT53D768M64D4SQ-053 WT ES:A TR	Micron Technology Inc.	LPDDR4 48G 768MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,192	-	-	-	-	-	-	-	-	-	-	-	-
7024L35JI8	IDT, Integrated Device Technology Inc	IC SRAM 64K PARALLEL 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	封裝: 84-LCC (J-Lead)	庫存7,568	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
MT60B4G4HB-56B-G-TR	Micron Technology Inc.	DDR5 16G 4GX4 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CAT24C08HU4E-GT3	onsemi	IC EEPROM 8KBIT I2C 400KHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kbit Memory Interface: I2C Clock Frequency: 400 kHz Write Cycle Time - Word, Page: 5ms Access Time: 900 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN-EP (2x3)	封裝: -	Request a Quote	EEPROM	EEPROM	8Kbit	I2C	400 kHz	5ms	900 ns	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN-EP (2x3)
NM93C46AVM8	Fairchild Semiconductor	IC EEPROM 1KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: Microwire Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	EEPROM	EEPROM	1Kbit	Microwire	1 MHz	10ms	-	4.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24CS256T-E-SN	Microchip Technology	IC EEPROM 256KBIT I2C 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 400 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	EEPROM	EEPROM	256Kbit	I2C	1 MHz	5ms	400 ns	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY7C09179V-12AC	Infineon Technologies	IC SRAM 288KBIT 12NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 288Kbit Memory Interface: Parallel Clock Frequency: 50 MHz Write Cycle Time - Word, Page: - Access Time: 12 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: -	Request a Quote	SRAM	SRAM - Dual Port, Synchronous	288Kbit	Parallel	50 MHz	-	12 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)

QMP29GL01GP12FFI010

Cypress Semiconductor Corp

IC FLASH 1GBIT 120NS 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

封裝: 64-LBGA

庫存3,488

FLASH

FLASH - NOR

1Gb (128M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

AT45DB081D-MU-SL383

Adesto Technologies

IC FLASH 8MBIT 66MHZ 8VDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (264 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFN (6x5)

封裝: 8-VDFN Exposed Pad

庫存2,912

FLASH

8Mb (264 Bytes x 4096 pages)

SPI

66MHz

4ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-VDFN Exposed Pad

8-VDFN (6x5)

IDT71V65703S75PF

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存14,592

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

-

7.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71V016SA10YI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 10NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

封裝: 44-BSOJ (0.400", 10.16mm Width)

庫存3,888

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

10ns

3.15 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

AT49F040A-55TU-T

Microchip Technology

IC FLASH 4MBIT 55NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 40µs
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

封裝: 32-TFSOP (0.724", 18.40mm Width)

庫存5,968

FLASH

4Mb (512K x 8)

Parallel

-

40µs

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

AT24C02AN-10SC

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,456

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT53B512M64D4TX-053 WT:C TR

Micron Technology Inc.

IC SDRAM 32GBIT 1.866GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,936

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

71T75602S166BGGI

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 166MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存5,728

SRAM

SRAM - Synchronous ZBT

18Mb (512K x 36)

Parallel

166MHz

-

3.5ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS42VM32200M-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

庫存4,368

DRAM

SDRAM - Mobile

64Mb (2M x 32)

Parallel

166MHz

-

5.5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

SST26VF016BT-104V/MF

Microchip Technology

IC FLASH 16MBIT 104MHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WDFN (5x6)

封裝: 8-WDFN Exposed Pad

庫存5,616

FLASH

16Mb (2M x 8)

SPI - Quad I/O

104MHz

1.5ms

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WDFN (5x6)

25AA256-E/P

Microchip Technology

IC EEPROM 256KBIT 10MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存4,912

EEPROM

256Kb (32K x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 125°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

93LC66CT-E/MS

Microchip Technology

IC EEPROM 4KBIT 3MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8, 256 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存4,784

EEPROM

4Kb (512 x 8, 256 x 16)

SPI

3MHz

6ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

24AA024T-I/MC

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x3)

封裝: 8-VFDFN Exposed Pad

庫存12,612

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x3)

BR34L02FVT-WE2

Rohm Semiconductor

IC EEPROM 2KBIT 400KHZ 8TSSOP-B

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存1,296,000

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

CY7C1470BV33-167BZI

Cypress Semiconductor Corp

IC SRAM 72MBIT 167MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封裝: 165-LBGA

庫存7,568

SRAM

SRAM - Synchronous

72Mb (2M x 36)

Parallel

167MHz

-

3.4ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

MT29F4G08ABAFAH4-AATES:F

Micron Technology Inc.

IC FLASH 4G PARALLEL FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,784

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TC)

-

NM93C56LZM8

ON Semiconductor

IC EEPROM 2K SPI 250KHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (128 x 16)
Memory Interface: SPI
Clock Frequency: 250kHz
Write Cycle Time - Word, Page: 15ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,488

EEPROM

2Kb (128 x 16)

SPI

250kHz

15ms

-

2.7 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IS46TR16640B-125JBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

庫存5,088

DRAM

SDRAM - DDR3

1Gb (64M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR82560C-15HBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

封裝: 78-TFBGA

庫存6,336

DRAM

SDRAM - DDR3

2Gb (256M x 8)

Parallel

667MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

S25FL256SAGBHMC03

Cypress Semiconductor Corp

IC 256 MB FLASH MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封裝: 24-TBGA

庫存6,784

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)

DS28CN01U-W0D+1T-C

Maxim Integrated

IC INTERFACE MISC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 1.62 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-uMAX

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存2,496

EEPROM

1Kb (128 x 8)

I²C

400kHz

10ms

-

1.62 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-uMAX

MT53D768M64D4SQ-053 WT ES:A TR

Micron Technology Inc.

LPDDR4 48G 768MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,192

-

7024L35JI8

IDT, Integrated Device Technology Inc

IC SRAM 64K PARALLEL 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

封裝: 84-LCC (J-Lead)

庫存7,568

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

35ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

MT60B4G4HB-56B-G-TR

Micron Technology Inc.

DDR5 16G 4GX4 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

CAT24C08HU4E-GT3

onsemi

IC EEPROM 8KBIT I2C 400KHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kbit
Memory Interface: I2C
Clock Frequency: 400 kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN-EP (2x3)

封裝: -

Request a Quote

EEPROM

8Kbit

I2C

400 kHz

5ms

900 ns

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN-EP (2x3)

NM93C46AVM8

Fairchild Semiconductor

IC EEPROM 1KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: Microwire
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

EEPROM

1Kbit

Microwire

1 MHz

10ms

-

4.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24CS256T-E-SN

Microchip Technology

IC EEPROM 256KBIT I2C 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

EEPROM

256Kbit

I2C

1 MHz

5ms

400 ns

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY7C09179V-12AC

Infineon Technologies

IC SRAM 288KBIT 12NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 288Kbit
Memory Interface: Parallel
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: -
Access Time: 12 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: -

Request a Quote

SRAM

SRAM - Dual Port, Synchronous

288Kbit

Parallel

50 MHz

-

12 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)