頁 1026 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S99FL132K0XMFI013	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,664	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2T08CVCBBG6-6C:B	Micron Technology Inc.	IC FLASH 2TBIT 167MHZ 272LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,184	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
CY7C1474BV25-200BGC	Cypress Semiconductor Corp	IC SRAM 72MBIT 200MHZ 209FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (1M x 72) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 209-BGA Supplier Device Package: 209-FBGA (14x22)	封裝: 209-BGA	庫存4,432	SRAM	SRAM - Synchronous	72Mb (1M x 72)	Parallel	200MHz	-	3ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	209-BGA	209-FBGA (14x22)
71V35761S200BG	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 200MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存2,736	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS42S16400F-6TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存5,360	DRAM	SDRAM	64Mb (4M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
CY7C1325G-100AXCT	Cypress Semiconductor Corp	IC SRAM 4.5MBIT 100MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 3.15 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封裝: 100-LQFP	庫存2,624	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	100MHz	-	8ns	3.15 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
AT45DB081B-RI-2.5	Microchip Technology	IC FLASH 8MBIT 15MHZ 28SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (264 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 15MHz Write Cycle Time - Word, Page: 14ms Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOIC	封裝: 28-SOIC (0.342", 8.69mm Width)	庫存4,096	FLASH	FLASH	8Mb (264 Bytes x 4096 pages)	SPI	15MHz	14ms	-	2.5 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOIC
DS1230Y-200	Maxim Integrated	IC NVSRAM 256KBIT 200NS 28EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200ns Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.600", 15.24mm) Supplier Device Package: 28-EDIP	封裝: 28-DIP Module (0.600", 15.24mm)	庫存6,480	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	200ns	200ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	28-DIP Module (0.600", 15.24mm)	28-EDIP
AT25320-10PI-2.7	Microchip Technology	IC EEPROM 32KBIT 3MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存3,264	EEPROM	EEPROM	32Kb (4K x 8)	SPI	3MHz	5ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
7130SA20TF8	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 20NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	封裝: 64-LQFP	庫存2,176	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (10x10)
IS42SM32200M-6BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: 90-TFBGA	庫存5,520	DRAM	SDRAM - Mobile	64Mb (2M x 32)	Parallel	166MHz	-	5.5ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
S25FL064LABMFN010	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,912	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	-	-	-
71V016SA15YGI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 15NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	封裝: 44-BSOJ (0.400", 10.16mm Width)	庫存6,336	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
IS42S16100H-7BL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 143MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (6.4x10.1)	封裝: 60-TFBGA	庫存5,264	DRAM	SDRAM	16Mb (1M x 16)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (6.4x10.1)
MB85RC64APNF-G-JNE1	Fujitsu Electronics America, Inc.	IC FRAM 64KBIT 1MHZ 8SOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: - Access Time: 550ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,600	FRAM	FRAM (Ferroelectric RAM)	64Kb (8K x 8)	I2C	1MHz	-	550ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
23A512-I/SN	Microchip Technology	IC SRAM 512KBIT 20MHZ 8SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 512Kb (64K x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 20MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,840	SRAM	SRAM	512Kb (64K x 8)	SPI - Quad I/O	20MHz	-	-	1.7 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24LC02B-I/S15K	Microchip Technology	IC EEPROM 2K I2C 400KHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存6,000	EEPROM	EEPROM	2Kb (256 x 8)	I²C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
CY7C1360S-200BGC	Cypress Semiconductor Corp	IC SRAM 9M PARALLEL 119PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存6,736	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	200MHz	-	3ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS61WV204816ALL-10BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 32M PARALLEL 48MGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 32Mb (2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-miniBGA (6x8)	封裝: 48-TFBGA	庫存2,624	SRAM	SRAM - Asynchronous	32Mb (2M x 16)	Parallel	-	10ns	10ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-miniBGA (6x8)
70V9359S12PF	IDT, Integrated Device Technology Inc	IC SRAM 144K PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 144Kb (8K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存5,712	SRAM	SRAM - Dual Port, Synchronous	144Kb (8K x 18)	Parallel	-	-	12ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
71421LA55JI8	IDT, Integrated Device Technology Inc	IC SRAM 16K PARALLEL 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封裝: 52-LCC (J-Lead)	庫存7,904	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
MT53D1024M64D8NW-062 WT:D TR	Micron Technology Inc.	IC DRAM 64G 1600MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,536	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
CAT24C05LGI	onsemi	IC EEPROM 4KBIT I2C 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: I2C Clock Frequency: 400 kHz Write Cycle Time - Word, Page: 5ms Access Time: 900 ns Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: -	Request a Quote	EEPROM	EEPROM	4Kbit	I2C	400 kHz	5ms	900 ns	1.8V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
CY7C1363B-117BGC	Cypress Semiconductor Corp	IC SRAM 9MBIT PAR 117MHZ 119PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 9Mbit Memory Interface: Parallel Clock Frequency: 117 MHz Write Cycle Time - Word, Page: - Access Time: 7.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	9Mbit	Parallel	117 MHz	-	7.5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS46TR81280BL-125JBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3L	1Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 105°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
CAT25320VE-GC	onsemi	IC EEPROM 32KBIT SPI 10MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kbit Memory Interface: SPI Clock Frequency: 10 MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	EEPROM	EEPROM	32Kbit	SPI	10 MHz	5ms	-	1.8V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MB85R8M2TABGL-G-JAE1	Fujitsu Semiconductor Memory Solution	IC FRAM 8MBIT PARALLEL 48FBGA Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8x6)	封裝: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	8Mbit	Parallel	-	150ns	150 ns	1.8V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-FBGA (8x6)
CY15B108QN-50BKXI	Infineon Technologies	IC FRAM 8MBIT SPI 50MHZ 24FBGA Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 8Mbit Memory Interface: SPI Clock Frequency: 50 MHz Write Cycle Time - Word, Page: - Access Time: 9 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-FBGA (6x8)	封裝: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	8Mbit	SPI	50 MHz	-	9 ns	1.8V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-FBGA (6x8)

S99FL132K0XMFI013

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,664

-

MT29F2T08CVCBBG6-6C:B

Micron Technology Inc.

IC FLASH 2TBIT 167MHZ 272LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,184

FLASH

FLASH - NAND

2Tb (256G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

CY7C1474BV25-200BGC

Cypress Semiconductor Corp

IC SRAM 72MBIT 200MHZ 209FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (1M x 72)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 209-BGA
Supplier Device Package: 209-FBGA (14x22)

封裝: 209-BGA

庫存4,432

SRAM

SRAM - Synchronous

72Mb (1M x 72)

Parallel

200MHz

-

3ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

209-BGA

209-FBGA (14x22)

71V35761S200BG

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 200MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存2,736

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS42S16400F-6TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存5,360

DRAM

SDRAM

64Mb (4M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

CY7C1325G-100AXCT

Cypress Semiconductor Corp

IC SRAM 4.5MBIT 100MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封裝: 100-LQFP

庫存2,624

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

100MHz

-

8ns

3.15 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

AT45DB081B-RI-2.5

Microchip Technology

IC FLASH 8MBIT 15MHZ 28SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (264 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 15MHz
Write Cycle Time - Word, Page: 14ms
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOIC

封裝: 28-SOIC (0.342", 8.69mm Width)

庫存4,096

FLASH

8Mb (264 Bytes x 4096 pages)

SPI

15MHz

14ms

-

2.5 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

28-SOIC (0.342", 8.69mm Width)

28-SOIC

DS1230Y-200

Maxim Integrated

IC NVSRAM 256KBIT 200NS 28EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200ns
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP

封裝: 28-DIP Module (0.600", 15.24mm)

庫存6,480

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

200ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

28-DIP Module (0.600", 15.24mm)

28-EDIP

AT25320-10PI-2.7

Microchip Technology

IC EEPROM 32KBIT 3MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存3,264

EEPROM

32Kb (4K x 8)

SPI

3MHz

5ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

7130SA20TF8

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 20NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

封裝: 64-LQFP

庫存2,176

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (10x10)

IS42SM32200M-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

庫存5,520

DRAM

SDRAM - Mobile

64Mb (2M x 32)

Parallel

166MHz

-

5.5ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

S25FL064LABMFN010

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,912

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

-

71V016SA15YGI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 15NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

封裝: 44-BSOJ (0.400", 10.16mm Width)

庫存6,336

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

15ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

IS42S16100H-7BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (6.4x10.1)

封裝: 60-TFBGA

庫存5,264

DRAM

SDRAM

16Mb (1M x 16)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (6.4x10.1)

MB85RC64APNF-G-JNE1

Fujitsu Electronics America, Inc.

IC FRAM 64KBIT 1MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: -
Access Time: 550ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,600

FRAM

FRAM (Ferroelectric RAM)

64Kb (8K x 8)

I2C

1MHz

-

550ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

23A512-I/SN

Microchip Technology

IC SRAM 512KBIT 20MHZ 8SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,840

SRAM

512Kb (64K x 8)

SPI - Quad I/O

20MHz

-

1.7 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24LC02B-I/S15K

Microchip Technology

IC EEPROM 2K I2C 400KHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存6,000

EEPROM

2Kb (256 x 8)

I²C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

CY7C1360S-200BGC

Cypress Semiconductor Corp

IC SRAM 9M PARALLEL 119PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存6,736

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

200MHz

-

3ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS61WV204816ALL-10BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 32M PARALLEL 48MGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 32Mb (2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (6x8)

封裝: 48-TFBGA

庫存2,624

SRAM

SRAM - Asynchronous

32Mb (2M x 16)

Parallel

-

10ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-miniBGA (6x8)

70V9359S12PF

IDT, Integrated Device Technology Inc

IC SRAM 144K PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 144Kb (8K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存5,712

SRAM

SRAM - Dual Port, Synchronous

144Kb (8K x 18)

Parallel

-

12ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

71421LA55JI8

IDT, Integrated Device Technology Inc

IC SRAM 16K PARALLEL 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封裝: 52-LCC (J-Lead)

庫存7,904

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

MT53D1024M64D8NW-062 WT:D TR

Micron Technology Inc.

IC DRAM 64G 1600MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,536

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

CAT24C05LGI

onsemi

IC EEPROM 4KBIT I2C 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: I2C
Clock Frequency: 400 kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900 ns
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: -

Request a Quote

EEPROM

4Kbit

I2C

400 kHz

5ms

900 ns

1.8V ~ 5.5V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

CY7C1363B-117BGC

Cypress Semiconductor Corp

IC SRAM 9MBIT PAR 117MHZ 119PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 9Mbit
Memory Interface: Parallel
Clock Frequency: 117 MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: -

Request a Quote

SRAM

SRAM - Synchronous, SDR

9Mbit

Parallel

117 MHz

-

7.5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS46TR81280BL-125JBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

封裝: -

Request a Quote

DRAM

SDRAM - DDR3L

1Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 105°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

CAT25320VE-GC

onsemi

IC EEPROM 32KBIT SPI 10MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kbit
Memory Interface: SPI
Clock Frequency: 10 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

EEPROM

32Kbit

SPI

10 MHz

5ms

-

1.8V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MB85R8M2TABGL-G-JAE1

Fujitsu Semiconductor Memory Solution

IC FRAM 8MBIT PARALLEL 48FBGA

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 150ns
Access Time: 150 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8x6)

封裝: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

8Mbit

Parallel

-

150ns

150 ns

1.8V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-FBGA (8x6)

CY15B108QN-50BKXI

Infineon Technologies

IC FRAM 8MBIT SPI 50MHZ 24FBGA

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 8Mbit
Memory Interface: SPI
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: -
Access Time: 9 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-FBGA (6x8)

封裝: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

8Mbit

SPI

50 MHz

-

9 ns

1.8V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-FBGA (6x8)