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記憶體

記錄 62,144
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圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AS4C256M8D3-12BCNTR
Alliance Memory, Inc.

IC SDRAM 2GBIT 800MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 90°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x10.5)
封裝: 78-TFBGA
庫存3,472
DRAM
SDRAM - DDR3
2Gb (256M x 8)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
0°C ~ 90°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x10.5)
hot MT49H32M18CBM-18:B
Micron Technology Inc.

IC RLDRAM 576MBIT 533MHZ 144UBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 576Mb (32M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 15ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-µBGA (18.5x11)
封裝: 144-TFBGA
庫存7,472
DRAM
DRAM
576Mb (32M x 18)
Parallel
533MHz
-
15ns
1.7 V ~ 1.9 V
0°C ~ 95°C (TC)
Surface Mount
144-TFBGA
144-µBGA (18.5x11)
MT47H256M8THN-25E:H TR
Micron Technology Inc.

IC SDRAM 2GBIT 400MHZ 63FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 63-TFBGA
  • Supplier Device Package: 63-FBGA (8x10)
封裝: 63-TFBGA
庫存6,000
DRAM
SDRAM - DDR2
2Gb (256M x 8)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
63-TFBGA
63-FBGA (8x10)
MT46H128M32L2MC-6 WT:B TR
Micron Technology Inc.

IC SDRAM 4GBIT 167MHZ 240WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 240-WFBGA
  • Supplier Device Package: 240-WFBGA (14x14)
封裝: 240-WFBGA
庫存7,136
DRAM
SDRAM - Mobile LPDDR
4Gb (128M x 32)
Parallel
166MHz
15ns
5.0ns
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
Surface Mount
240-WFBGA
240-WFBGA (14x14)
IDT71024S12YI8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 32-SOJ
封裝: 32-BSOJ (0.400", 10.16mm Width)
庫存3,968
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-BSOJ (0.400", 10.16mm Width)
32-SOJ
AT27C4096-90PI
Microchip Technology

IC OTP 4MBIT 90NS 40DIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP (0.600", 15.24mm)
  • Supplier Device Package: 40-PDIP
封裝: 40-DIP (0.600", 15.24mm)
庫存3,040
EPROM
EPROM - OTP
4Mb (256K x 16)
Parallel
-
-
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Through Hole
40-DIP (0.600", 15.24mm)
40-PDIP
AT28HC256F-12JC
Microchip Technology

IC EEPROM 256KBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封裝: 32-LCC (J-Lead)
庫存3,824
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
3ms
120ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
70V24S55PFG8
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 55NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (4K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP
封裝: 100-LQFP
庫存6,784
SRAM
SRAM - Dual Port, Asynchronous
64Kb (4K x 16)
Parallel
-
55ns
55ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP
IS61WV10248BLL-10MLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 10NS 48MINIBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-miniBGA (9x11)
封裝: 48-TFBGA
庫存6,352
SRAM
SRAM - Asynchronous
8Mb (1M x 8)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-miniBGA (9x11)
S34ML02G200GHI000
Cypress Semiconductor Corp

NAND

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,864
FLASH
FLASH - NAND
2Gb (256M x 8)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
IS42S32400F-7TL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
封裝: 86-TFSOP (0.400", 10.16mm Width)
庫存4,768
DRAM
SDRAM
128Mb (4M x 32)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
IS65C256AL-25ULA3-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 256KBIT 25NS 28SOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.330", 8.38mm Width)
  • Supplier Device Package: 28-SOP
封裝: 28-SOIC (0.330", 8.38mm Width)
庫存6,976
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
28-SOIC (0.330", 8.38mm Width)
28-SOP
24LC1026T-I/SN
Microchip Technology

IC EEPROM 1MBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存6,160
EEPROM
EEPROM
1Mb (128K x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FT24C08A-USR-B
Fremont Micro Devices USA

IC EEPROM 8KBIT 1MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存6,752
EEPROM
EEPROM
8Kb (1K x 8)
I2C
1MHz
5ms
550ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot S34ML04G100BHI000
Cypress Semiconductor Corp

IC FLASH 4GBIT 25NS 63BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-BGA (11x9)
封裝: 63-VFBGA
庫存12,456
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-BGA (11x9)
hot IS61C256AL-12JLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 256KBIT 12NS 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
封裝: 28-BSOJ (0.300", 7.62mm Width)
庫存7,632
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
AT24CM02-SSHM-B
Microchip Technology

IC EEPROM 2MBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 450ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存49,512
EEPROM
EEPROM
2Mb (256K x 8)
I2C
1MHz
10ms
450ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot BR93L56RFJ-WE2
Rohm Semiconductor

IC EEPROM 2KBIT 2MHZ 8SOP-J

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存56,460
EEPROM
EEPROM
2Kb (128 x 16)
SPI
2MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
IS66WVE2M16EALL-70BLI
ISSI, Integrated Silicon Solution Inc

IC PSRAM 32MBIT 70NS 48BGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
封裝: 48-TFBGA
庫存20,892
PSRAM
PSRAM (Pseudo SRAM)
32Mb (2M x 16)
Parallel
-
70ns
70ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
hot 93LC66B-I/SN
Microchip Technology

IC EEPROM 4KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存45,456
EEPROM
EEPROM
4Kb (256 x 16)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S29PL127J70TAI130H
Cypress Semiconductor Corp

IC FLASH MEM NOR 56TSOPI

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128M (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
封裝: 56-TFSOP (0.724", 18.40mm Width)
庫存3,824
FLASH
FLASH - NOR
128M (8M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
AM29LV160DT-70EC
AMD

FLASH NOR 16MB TSOP TOP BLK 3V 7

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 3V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: 48-TSOP
封裝: -
Request a Quote
FLASH
FLASH - NOR
16Mbit
Parallel
-
70ns
70 ns
3V
0°C ~ 70°C
Surface Mount
-
48-TSOP
MT53D512M32D2DS-053-WT-ES-D
Micron Technology Inc.

IC DRAM 16GBIT 1.866GHZ 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gbit
  • Memory Interface: -
  • Clock Frequency: 1.866 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
封裝: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
16Gbit
-
1.866 GHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MX25U25643GBJI00
Macronix

MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 40µs, 3ms
  • Access Time: 8 ns
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-XFBGA, WLCSP
  • Supplier Device Package: 32-WLCSP
封裝: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
40µs, 3ms
8 ns
1.65V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
32-XFBGA, WLCSP
32-WLCSP
S29GL512P10FFIR20
Cypress Semiconductor Corp

IC FLASH 512MBIT PARALLEL 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
封裝: -
Request a Quote
FLASH
FLASH - NOR
512Mbit
Parallel
-
100ns
100 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (11x13)
CY7C1354BV25-166AC
Cypress Semiconductor Corp

IC SRAM 9MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 9Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5 ns
  • Voltage - Supply: 2.375V ~ 2.625V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
封裝: -
Request a Quote
SRAM
SRAM - Synchronous, SDR
9Mbit
Parallel
166 MHz
-
3.5 ns
2.375V ~ 2.625V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
MT29F1T08GBLCEN48R3WC1-R
Micron Technology Inc.

128GX8 NAND FLASH DIE-COM

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
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W631GU6NB09J-TR
Winbond Electronics

IC DRAM 1GBIT PAR 96VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V, 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-VFBGA (7.5x13)
封裝: -
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DRAM
SDRAM - DDR3L
1Gbit
Parallel
1.066 GHz
15ns
20 ns
1.283V ~ 1.45V, 1.425V ~ 1.575V
-40°C ~ 105°C (TC)
Surface Mount
96-VFBGA
96-VFBGA (7.5x13)