頁 1008 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
N25Q128A13ESFC0G	Micron Technology Inc.	IC FLASH 128MBIT 108MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (32M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存3,408	FLASH	FLASH - NOR	128Mb (32M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
N25W128A11EF740E	Micron Technology Inc.	IC FLASH 128MBIT 108MHZ 8VPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (32M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFPN (6x5) (MLP8)	封裝: 8-VDFN Exposed Pad	庫存3,360	FLASH	FLASH - NOR	128Mb (32M x 4)	SPI	108MHz	-	-	1.7 V ~ 2 V	-25°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-VDFPN (6x5) (MLP8)
MT47H128M8HQ-3 IT:G TR	Micron Technology Inc.	IC SDRAM 1GBIT 333MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-FBGA Supplier Device Package: 60-FBGA (8x11.5)	封裝: 60-FBGA	庫存6,688	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	60-FBGA	60-FBGA (8x11.5)
IDT71V67903S75PFI	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存5,232	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71V25761SA166BGI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存7,808	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IDT71256SA25Y8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 25NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	封裝: 28-BSOJ (0.300", 7.62mm Width)	庫存5,008	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
CY7C1311CV18-200BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 200MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (2M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存4,800	SRAM	SRAM - Synchronous, QDR II	18Mb (2M x 8)	Parallel	200MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
DS2433G+T&R	Maxim Integrated	IC EEPROM 4KBIT 1WIRE 2SFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 16) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 2µs Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 2-SFN Supplier Device Package: 2-SFN (6x6)	封裝: 2-SFN	庫存7,072	EEPROM	EEPROM	4Kb (256 x 16)	1-Wire?	-	-	2µs	-	-40°C ~ 85°C (TA)	Surface Mount	2-SFN	2-SFN (6x6)
DS2229-85	Maxim Integrated	IC NVSRAM 8MBIT 85NS 80SIMM Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Socket Package / Case: 80-SIMM Supplier Device Package: 80-SIMM	封裝: 80-SIMM	庫存4,592	NVSRAM	NVSRAM (Non-Volatile SRAM)	8Mb (512K x 16)	Parallel	-	85ns	85ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Socket	80-SIMM	80-SIMM
AT27C1024-70VC	Microchip Technology	IC OTP 1MBIT 70NS 40VSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 40-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 40-VSOP	封裝: 40-TFSOP (0.488", 12.40mm Width)	庫存3,184	EPROM	EPROM - OTP	1Mb (64K x 16)	Parallel	-	-	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	40-TFSOP (0.488", 12.40mm Width)	40-VSOP
IS61DDP2B44M18A-400M3L	ISSI, Integrated Silicon Solution Inc	IC SDRAM 72MBIT 400MHZ 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR IIP Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-LFBGA (15x17)	封裝: 165-LBGA	庫存3,344	SRAM	SRAM - Synchronous, DDR IIP	72Mb (4M x 18)	Parallel	400MHz	-	-	1.71 V ~ 1.89 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-LFBGA (15x17)
CY7C1463KV33-133AXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封裝: 100-LQFP	庫存4,848	SRAM	SRAM - Synchronous	36Mb (2M x 18)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
CY7C1424KV18-250BZCT	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存4,000	SRAM	SRAM - Synchronous, DDR II	36Mb (1M x 36)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
24LC64FT-I/MS	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存3,488	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
24C00-I/ST	Microchip Technology	IC EEPROM 128BIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128b (16 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 4ms Access Time: 3500ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存3,248	EEPROM	EEPROM	128b (16 x 8)	I2C	400kHz	4ms	3500ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY7C1645KV18-400BZXI	Cypress Semiconductor Corp	IC SRAM 144MBIT 400MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 144Mb (4M x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封裝: 165-LBGA	庫存7,168	SRAM	SRAM - Synchronous, QDR II+	144Mb (4M x 36)	Parallel	400MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
BR25S256FJ-WE2	Rohm Semiconductor	IC EEPROM 256KBIT 20MHZ 8SOP-J Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP-J	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存24,354	EEPROM	EEPROM	256Kb (32K x 8)	SPI	20MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP-J
IS43R86400E-5BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 200MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (13x8)	封裝: 60-TFBGA	庫存4,784	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (13x8)
MT29F4G08ABAFAWP-AITES:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,912	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT25QU128ABB1EW7-CAUT	Micron Technology Inc.	IC FLASH 128M SPI 133MHZ 8WPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPDFN (6x5)(MLP8)	封裝: 8-WDFN Exposed Pad	庫存7,872	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	133MHz	8ms, 2.8ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WPDFN (6x5)(MLP8)
S27KS0642GABHM020	Infineon Technologies	IC PSRAM 64MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封裝: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	64Mbit	HyperBus	200 MHz	35ns	35 ns	1.7V ~ 2V	-40°C ~ 125°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
W25Q32JVSSJM	Winbond Electronics	IC FLASH 32MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	FLASH	FLASH - NOR	32Mbit	SPI - Quad I/O	133 MHz	3ms	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
CY7C1041CV33-20VI	Cypress Semiconductor Corp	IC SRAM 4MBIT PARALLEL 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	封裝: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	20ns	20 ns	3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
GD25D20CTIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 2MBIT SPI/DUAL 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 2Mbit Memory Interface: SPI - Dual I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 4ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	FLASH	FLASH - NOR (SLC)	2Mbit	SPI - Dual I/O	104 MHz	50µs, 4ms	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
S-93A76BD0A-K8T2U3	ABLIC Inc.	LINEAR IC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kbit Memory Interface: Microwire Clock Frequency: 2 MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-TMSOP	封裝: -	Request a Quote	EEPROM	EEPROM	8Kbit	Microwire	2 MHz	4ms	-	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-WSSOP, 8-MSOP (0.110", 2.80mm Width)	8-TMSOP
S-25A020A0A-T8T2UD	ABLIC Inc.	LINEAR IC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: SPI Clock Frequency: 6.5 MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: -	Request a Quote	EEPROM	EEPROM	2Kbit	SPI	6.5 MHz	4ms	-	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MT53E2G64D8TN-046-AIT-C	Micron Technology Inc.	LPDDR4 128G 2GX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 128Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 556-LFBGA Supplier Device Package: 556-LFBGA (12.4x12.4)	封裝: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	128Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 95°C (TC)	Surface Mount	556-LFBGA	556-LFBGA (12.4x12.4)
IM8G08D4GBBG-062	Intelligent Memory Ltd.	DDR4 8GB, 1.2V, 1GX8, 1600MHZ (3 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.26V ~ 1.14V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x12)	封裝: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	Parallel	1.6 GHz	15ns	18 ns	1.26V ~ 1.14V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x12)

N25Q128A13ESFC0G

Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存3,408

FLASH

FLASH - NOR

128Mb (32M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

N25W128A11EF740E

Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 8VPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFPN (6x5) (MLP8)

封裝: 8-VDFN Exposed Pad

庫存3,360

FLASH

FLASH - NOR

128Mb (32M x 4)

SPI

108MHz

-

1.7 V ~ 2 V

-25°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-VDFPN (6x5) (MLP8)

MT47H128M8HQ-3 IT:G TR

Micron Technology Inc.

IC SDRAM 1GBIT 333MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-FBGA
Supplier Device Package: 60-FBGA (8x11.5)

封裝: 60-FBGA

庫存6,688

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

60-FBGA

60-FBGA (8x11.5)

IDT71V67903S75PFI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存5,232

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71V25761SA166BGI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存7,808

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IDT71256SA25Y8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

封裝: 28-BSOJ (0.300", 7.62mm Width)

庫存5,008

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

CY7C1311CV18-200BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (2M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存4,800

SRAM

SRAM - Synchronous, QDR II

18Mb (2M x 8)

Parallel

200MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

DS2433G+T&R

Maxim Integrated

IC EEPROM 4KBIT 1WIRE 2SFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 2µs
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 2-SFN
Supplier Device Package: 2-SFN (6x6)

封裝: 2-SFN

庫存7,072

EEPROM

4Kb (256 x 16)

1-Wire?

-

2µs

-

-40°C ~ 85°C (TA)

Surface Mount

2-SFN

2-SFN (6x6)

DS2229-85

Maxim Integrated

IC NVSRAM 8MBIT 85NS 80SIMM

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Socket
Package / Case: 80-SIMM
Supplier Device Package: 80-SIMM

封裝: 80-SIMM

庫存4,592

NVSRAM

NVSRAM (Non-Volatile SRAM)

8Mb (512K x 16)

Parallel

-

85ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Socket

80-SIMM

AT27C1024-70VC

Microchip Technology

IC OTP 1MBIT 70NS 40VSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 40-VSOP

封裝: 40-TFSOP (0.488", 12.40mm Width)

庫存3,184

EPROM

EPROM - OTP

1Mb (64K x 16)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

40-TFSOP (0.488", 12.40mm Width)

40-VSOP

IS61DDP2B44M18A-400M3L

ISSI, Integrated Silicon Solution Inc

IC SDRAM 72MBIT 400MHZ 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR IIP
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)

封裝: 165-LBGA

庫存3,344

SRAM

SRAM - Synchronous, DDR IIP

72Mb (4M x 18)

Parallel

400MHz

-

1.71 V ~ 1.89 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-LFBGA (15x17)

CY7C1463KV33-133AXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封裝: 100-LQFP

庫存4,848

SRAM

SRAM - Synchronous

36Mb (2M x 18)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

CY7C1424KV18-250BZCT

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存4,000

SRAM

SRAM - Synchronous, DDR II

36Mb (1M x 36)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

24LC64FT-I/MS

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存3,488

EEPROM

64Kb (8K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

24C00-I/ST

Microchip Technology

IC EEPROM 128BIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128b (16 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 4ms
Access Time: 3500ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存3,248

EEPROM

128b (16 x 8)

I2C

400kHz

4ms

3500ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY7C1645KV18-400BZXI

Cypress Semiconductor Corp

IC SRAM 144MBIT 400MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 144Mb (4M x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封裝: 165-LBGA

庫存7,168

SRAM

SRAM - Synchronous, QDR II+

144Mb (4M x 36)

Parallel

400MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

BR25S256FJ-WE2

Rohm Semiconductor

IC EEPROM 256KBIT 20MHZ 8SOP-J

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP-J

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存24,354

EEPROM

256Kb (32K x 8)

SPI

20MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP-J

IS43R86400E-5BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 200MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (13x8)

封裝: 60-TFBGA

庫存4,784

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (13x8)

MT29F4G08ABAFAWP-AITES:F TR

Micron Technology Inc.

IC FLASH 4G PARALLEL TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,912

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT25QU128ABB1EW7-CAUT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPDFN (6x5)(MLP8)

封裝: 8-WDFN Exposed Pad

庫存7,872

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

133MHz

8ms, 2.8ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WPDFN (6x5)(MLP8)

S27KS0642GABHM020

Infineon Technologies

IC PSRAM 64MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封裝: -

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PSRAM

PSRAM (Pseudo SRAM)

64Mbit

HyperBus

200 MHz

35ns

35 ns

1.7V ~ 2V

-40°C ~ 125°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

W25Q32JVSSJM

Winbond Electronics

IC FLASH 32MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: -

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FLASH

FLASH - NOR

32Mbit

SPI - Quad I/O

133 MHz

3ms

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

CY7C1041CV33-20VI

Cypress Semiconductor Corp

IC SRAM 4MBIT PARALLEL 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

封裝: -

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SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

20ns

20 ns

3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

GD25D20CTIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 2MBIT SPI/DUAL 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 2Mbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 4ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

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FLASH

FLASH - NOR (SLC)

2Mbit

SPI - Dual I/O

104 MHz

50µs, 4ms

6 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

S-93A76BD0A-K8T2U3

ABLIC Inc.

LINEAR IC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kbit
Memory Interface: Microwire
Clock Frequency: 2 MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-TMSOP

封裝: -

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EEPROM

8Kbit

Microwire

2 MHz

4ms

-

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-WSSOP, 8-MSOP (0.110", 2.80mm Width)

8-TMSOP

S-25A020A0A-T8T2UD

ABLIC Inc.

LINEAR IC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: SPI
Clock Frequency: 6.5 MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: -

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EEPROM

2Kbit

SPI

6.5 MHz

4ms

-

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MT53E2G64D8TN-046-AIT-C

Micron Technology Inc.

LPDDR4 128G 2GX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 128Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 556-LFBGA
Supplier Device Package: 556-LFBGA (12.4x12.4)

封裝: -

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DRAM

SDRAM - Mobile LPDDR4X

128Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 95°C (TC)

Surface Mount

556-LFBGA

556-LFBGA (12.4x12.4)

IM8G08D4GBBG-062

Intelligent Memory Ltd.

DDR4 8GB, 1.2V, 1GX8, 1600MHZ (3

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.26V ~ 1.14V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x12)

封裝: -

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DRAM

SDRAM - DDR4

8Gbit

Parallel

1.6 GHz

15ns

18 ns

1.26V ~ 1.14V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x12)