Infineon Technologies 產品

IRGP4262D-EPBF

Infineon Technologies

IGBT 650V 60A 250W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 24A
• Power - Max: 250W
• Switching Energy: 520µJ (on), 240µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 24ns/73ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封裝: TO-247-3

SGP30N60XKSA1

Infineon Technologies

IGBT 600V 41A 250W TO263

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 41A
• Current - Collector Pulsed (Icm): 112A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
• Power - Max: 250W
• Switching Energy: 1.29mJ
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 44ns/291ns
• Test Condition: 400V, 30A, 11 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

94-2355PBF

Infineon Technologies

MOSFET N-CH 100V TO-220AB

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封裝: -

IPP06CN10NGXKSA1

Infineon Technologies

MOSFET N-CH 100V 100A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 180µA
• Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 214W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封裝: TO-220-3

IPB80N06S2L09ATMA1

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 125µA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 52A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7466TRPBF

Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

IPA60R460CEXKSA1

Infineon Technologies

MOSFET N-CH 600V TO-220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 280µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 460 mOhm @ 3.4A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-FP
• Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

IRFS7534TRLPBF

Infineon Technologies

MOSFET N CH 60V 195A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 294W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封裝: TO-263-7, D2Pak (6 Leads + Tab)

BCR142WE6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

BAS21E6359HTMA1

Infineon Technologies

DIODE GP 200V 250MA SOT23-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3
• Operating Temperature - Junction: 150°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

BCR410WE6327HTSA1

Infineon Technologies

IC ACTIVE BIAS CONTROLLER SOT343

• Applications: Bias Controller
• Current - Supply: -
• Voltage - Supply: 1.8 V ~ 18 V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

封裝: SC-82A, SOT-343

BTS432E2E3043

Infineon Technologies

IC SWITCH PWR HISIDE TO-220AB-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.5 V ~ 42 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 9A
• Rds On (Typ): 30 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-220-5
• Supplier Device Package: P-TO220-5

封裝: TO-220-5

TLE4726GXUMA1

Infineon Technologies

IC MOTOR DRIVER PAR 24DSO

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Bipolar
• Step Resolution: 1, 1/2, 1/4
• Applications: General Purpose
• Current - Output: 800mA
• Voltage - Supply: 4.5 V ~ 6.5 V
• Voltage - Load: 5 V ~ 50 V
• Operating Temperature: -25°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-24-13

封裝: 24-SOIC (0.295", 7.50mm Width)

SAF-XE164FN-24F80L AA

Infineon Technologies

IC MCU 16BIT 192KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 192KB (192K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 26K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

封裝: 100-LQFP Exposed Pad

TLE9877QXW40XUMA1

Infineon Technologies

IC SOC MOTOR DRIVER 48VQFN

• Applications: Automotive
• Core Processor: ARM? Cortex?-M3
• Program Memory Type: FLASH (64 kB)
• Controller Series: -
• RAM Size: 6K x 8
• Interface: LIN, SSI, UART
• Number of I/O: 10
• Voltage - Supply: 5.5 V ~ 28 V
• Operating Temperature: -40°C ~ 175°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IPB60R060P7ATMA1

Infineon Technologies

MOSFET N-CH 600V 48A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 800µA
• Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 164W (Tc)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

FS50R06KE3BOSA1

Infineon Technologies

FS50R06 - IGBT MODULE

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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FP75R07N2E4B11BOSA1

Infineon Technologies

IGBT MODULE 650V 75A

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 75 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -

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IPTC039N15NM5ATMA1

Infineon Technologies

OPTIMOS 5 POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4.6V @ 243µA
• Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-16-2
• Package / Case: 16-PowerSOP Module

封裝: -

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FS300R17OE4B61BPSA1

Infineon Technologies

FS300R17OE4 - IGBT Module

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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BSM400GA120DLCHOSA1

Infineon Technologies

IGBT MOD 1200V 625A 2500W

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 625 A
• Power - Max: 2500 W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 400A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -

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CY8C4124PVQ-442

Infineon Technologies

IC MCU 32BIT 16KB FLASH 28SSOP

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit Single-Core
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 24
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 28-SSOP

封裝: -

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IPA105N15N3GXKSA1

Infineon Technologies

MOSFET N-CH 150V 37A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4V @ 160µA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40.5W (Tc)
• Rds On (Max) @ Id, Vgs: 10.5mOhm @ 37A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

封裝: -

CY27430FLTXS

Infineon Technologies

IC SS CLOCK GENERATOR 48QFN

• Type: Spread Spectrum Clock Generator
• PLL: Yes with Bypass
• Input: Clock, Crystal
• Output: CML, HCSL, LVCMOS, LVDS, LVPECL
• Number of Circuits: 1
• Ratio - Input:Output: 2:8
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 250MHz, 700MHz
• Divider/Multiplier: Yes/No
• Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

封裝: -

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IHW30N110R5XKSA1

Infineon Technologies

IGBT TRENCH 60A TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
• Power - Max: 330 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 240 nC
• Td (on/off) @ 25°C: -/350ns
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: -

PEB4264-2VV1-2

Infineon Technologies

DUSLIC DUAL CHANNEL SUBSCRIBER L

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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IPN80R1K2P7ATMA1

Infineon Technologies

MOSFET N-CH 800V 4.5A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.8W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223
• Package / Case: TO-261-4, TO-261AA

封裝: -

F4100R17N3E4BPSA1

Infineon Technologies

LOW POWER ECONO

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -