頁 477 - Infineon Technologies 產品 | 黑森爾電子
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Infineon Technologies 產品

記錄 16,988
頁  477/607
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IGA03N120H2XKSA1
Infineon Technologies

IGBT 1200V 3A 29W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 3A
  • Current - Collector Pulsed (Icm): 9A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 29W
  • Switching Energy: 290µJ
  • Input Type: Standard
  • Gate Charge: 8.6nC
  • Td (on/off) @ 25°C: 9.2ns/281ns
  • Test Condition: 800V, 3A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3 Full Pack
庫存3,440
IRG7T150CL12B
Infineon Technologies

MOD IGBT 1200V 150A POWIR 62

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 300A
  • Power - Max: 910W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 20.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 62 Module
  • Supplier Device Package: POWIR? 62
封裝: POWIR? 62 Module
庫存6,976
IRLR2905CPBF
Infineon Technologies

MOSFET N-CH 55V 36A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,024
IRLR4343TR
Infineon Technologies

MOSFET N-CH 55V 26A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,296
AUIRFS4115
Infineon Technologies

MOSFET N-CH 150V 99A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 62A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,040
IAUT165N08S5N029ATMA2
Infineon Technologies

MOSFET N-CH 165A 80V 120V 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 108µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6370pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
封裝: 8-PowerSFN
庫存6,912
IPP100N10S305AKSA1
Infineon Technologies

MOSFET N-CH 100V 100A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存19,992
hot IRF6645TRPBF
Infineon Technologies

MOSFET N-CH 100V 5.7A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? SJ
  • Package / Case: DirectFET? Isometric SJ
封裝: DirectFET? Isometric SJ
庫存177,720
IRLSL4030PBF
Infineon Technologies

MOSFET N-CH 100V 180A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存7,944
hot IRFB4332PBF
Infineon Technologies

MOSFET N-CH 250V 60A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 35A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存103,464
BCX6910E6327HTSA1
Infineon Technologies

TRANS PNP 20V 1A SOT-89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Power - Max: 3W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89
封裝: TO-243AA
庫存5,664
TLE4278GXUMA1
Infineon Technologies

IC REG LINEAR 5V 200MA 14DSO

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 45V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 200µA ~ 12mA
  • PSRR: -
  • Control Features: Reset, Watchdog
  • Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-14
封裝: 14-SOIC (0.154", 3.90mm Width)
庫存7,296
BTS5440GNT
Infineon Technologies

IC HIGH SIDE PWR SWITCH PDSO-28

  • Switch Type: General Purpose
  • Number of Outputs: 4
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: Parallel
  • Voltage - Load: 4.5 V ~ 28 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 5.7A
  • Rds On (Typ): 21 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: PG-DSO-28
封裝: 28-SOIC (0.295", 7.50mm Width)
庫存6,544
ITS410E2HKSA1
Infineon Technologies

IC SWITCH HISIDE SMART TO220-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 4.7 V ~ 42 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.8A
  • Rds On (Typ): 190 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart, Status Flag
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Package / Case: TO-220-5 Formed Leads
  • Supplier Device Package: PG-TO220-5-3
封裝: TO-220-5 Formed Leads
庫存3,664
hot IR2121PBF
Infineon Technologies

IC MOSFET DRIVER LOW SIDE 8DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1.6A, 3.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 43ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
封裝: 8-DIP (0.300", 7.62mm)
庫存285,552
TLE92603QXXUMA2
Infineon Technologies

IC SBC 48VQFN

  • Applications: Automotive
  • Interface: SPI
  • Voltage - Supply: -
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-31
  • Mounting Type: Surface Mount
封裝: 48-VFQFN Exposed Pad
庫存5,616
XMC4400F100K512ABXQSA1
Infineon Technologies

IC MCU 32BIT 512KB FLASH 100LQFP

  • Core Processor: ARM? Cortex?-M4
  • Core Size: 32-Bit
  • Speed: 120MHz
  • Connectivity: CAN, Ethernet, I2C, LIN, SPI, UART, USB
  • Peripherals: DMA, I2S, LED, POR, PWM, WDT
  • Number of I/O: 55
  • Program Memory Size: 512KB (512K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 80K x 8
  • Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
  • Data Converters: A/D 24x12b, D/A 2x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: 100-LQFP (14x14)
封裝: 100-LQFP Exposed Pad
庫存4,752
SAF-XC866-4FRI 3V BE
Infineon Technologies

IC MCU 8BIT 16KB FLASH 38TSSOP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 86MHz
  • Connectivity: SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 19
  • Program Memory Size: 16KB (16K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 768 x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 38-TFSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 38-TSSOP
封裝: 38-TFSOP (0.173", 4.40mm Width)
庫存6,832
hot PVR1300NPBF
Infineon Technologies

IC RELAY PHOTOV 100V 360MA 16DIP

  • Circuit: DPST (2 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 5 Ohm
  • Load Current: 360mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 100 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
  • Supplier Device Package: 16-DIP
  • Relay Type: Relay
封裝: 16-DIP (0.300", 7.62mm), 10 Leads
庫存14,016
IR3092MPBF
Infineon Technologies

IC VID VOLTAGE PROGRAMMER 48MLPQ

  • Applications: VID Voltage Programmer
  • Voltage - Input: -
  • Voltage - Supply: 7.3 V ~ 21 V
  • Current - Supply: 29mA
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-MLPQ (7x7)
封裝: 48-VFQFN Exposed Pad
庫存5,328
BTS6133DAUMA1
Infineon Technologies

IC HIGH SIDE PWR SWITCH DPAK-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5.5 V ~ 38 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 41A
  • Rds On (Typ): 8 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: PG-TO252-5-11
封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD
庫存170,652
BTS555E3146HKSA1
Infineon Technologies

IC SW PWR HISIDE TO-218-5-146

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 34 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 128A
  • Rds On (Typ): 1.9 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-218-5
  • Supplier Device Package: TO-218AB/5
封裝: TO-218-5
庫存6,784
S29AL016J70BFI020B
Infineon Technologies

IC FLASH NOR 48FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
ETZ1100N16P70HPSA1
Infineon Technologies

SCR 1.6KV 1000A PB70ECO-1

  • Voltage - Off State: 1.6 kV
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Voltage - On State (Vtm) (Max): 1.52 V
  • Current - On State (It (AV)) (Max): 1051 A
  • Current - On State (It (RMS)) (Max): 1000 A
  • Current - Hold (Ih) (Max): 500 mA
  • Current - Off State (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 33600A @ 50Hz
  • SCR Type: Standard Recovery
  • Operating Temperature: 135°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB70ECO-1
封裝: -
Request a Quote
SIGC25T60UNX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 400V, 30A, 1.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
CYT2B64CADQ0AZSGS
Infineon Technologies

IC MCU 32BIT 576KB FLASH 64TQFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 80MHz
  • Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
  • Number of I/O: 59
  • Program Memory Size: 576KB (576K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 64K x 8
  • RAM Size: 64K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 28x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
封裝: -
Request a Quote
CY9AF114MAPMC-GE1
Infineon Technologies

IC MCU 32BIT 256KB FLASH 80LQFP

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit Single-Core
  • Speed: 40MHz
  • Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 66
  • Program Memory Size: 256KB (256K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 12x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-LQFP (12x12)
封裝: -
Request a Quote
IKW75N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 92A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 92 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 549 W
  • Switching Energy: 4.22mJ (on), 1.66mJ (off)
  • Input Type: Standard
  • Gate Charge: 535 nC
  • Td (on/off) @ 25°C: 55ns/461ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 145 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-U06
封裝: -
庫存1,140