頁 461 - Infineon Technologies 產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com 86-755-83210559 x831
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

Infineon Technologies 產品

記錄 16,988
頁  461/607
圖片
零件編號
製造商
描述
封裝
庫存
數量
IPB050N06NGATMA1
Infineon Technologies

MOSFET N-CH 60V 100A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,024
IPU04N03LA G
Infineon Technologies

MOSFET N-CH 25V 50A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存2,768
IRFR024NTRR
Infineon Technologies

MOSFET N-CH 55V 17A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,584
IPP50R140CPHKSA1
Infineon Technologies

MOSFET N-CH 550V 23A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 930µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存7,456
IPC100N04S5L1R5ATMA1
Infineon Technologies

MOSFET N-CH 40V 100A 8TDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存4,800
BSD235NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 20V 0.95A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 950mA
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
封裝: 6-VSSOP, SC-88, SOT-363
庫存3,248
hot BCR503E6327HTSA1
Infineon Technologies

TRANS PREBIAS NPN 300MW SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 100MHz
  • Power - Max: 330mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存5,776
BAV199E6433HTMA1
Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5nA @ 75V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存74,394
IR3411SPBF
Infineon Technologies

IC SWITCH HIGH SIDE D2PAK-5

  • Switch Type: -
  • Number of Outputs: -
  • Ratio - Input:Output: -
  • Output Configuration: -
  • Output Type: -
  • Interface: -
  • Voltage - Load: -
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,952
hot IR5001S
Infineon Technologies

IC OR CTRLR N+1 8SOIC

  • Type: N+1 ORing Controller
  • FET Type: N-Channel
  • Ratio - Input:Output: N:1
  • Internal Switch(s): No
  • Delay Time - ON: 27µs
  • Delay Time - OFF: 130ns
  • Current - Output (Max): -
  • Current - Supply: 500µA
  • Voltage - Supply: 36 V ~ 75 V
  • Applications: -48V Dist Power Systems
  • Operating Temperature: 0°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存55,320
IRMCF143STY
Infineon Technologies

IC MOTOR CTLR I2C/SPI 64MQFP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: AC, Servo
  • Function: Controller - Commutation, Direction Management
  • Output Configuration: Pre-Driver - Half Bridge (3)
  • Interface: I2C, RS-232, SPI
  • Technology: IGBT
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: -
  • Voltage - Supply: 3V ~ 3.6V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
封裝: 64-LQFP
庫存4,240
IRMCF143TY
Infineon Technologies

IC MOTOR CTLR I2C/SPI 64LQFP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: AC, Servo
  • Function: Controller - Commutation, Direction Management
  • Output Configuration: Pre-Driver - Half Bridge (3)
  • Interface: I2C, RS-232, SPI
  • Technology: IGBT
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: -
  • Voltage - Supply: 3V ~ 3.6V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
封裝: 64-LQFP
庫存4,848
IRS2330DSPBF
Infineon Technologies

IC BRIDGE DVR 3PH 600V 28-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
封裝: 28-SOIC (0.295", 7.50mm Width)
庫存4,576
KTY135
Infineon Technologies

SENSOR TEMP RESISTIVE SOT-23

  • Resistance in Ohms @ 25°C: 1.97k
  • Resistance Tolerance: ±3%
  • Operating Temperature: -50°C ~ 150°C
  • Power - Max: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存7,524
TLE5012BE9000XUMA1
Infineon Technologies

SPEED SENSORS 8DSO

  • Function: -
  • Technology: -
  • Polarization: -
  • Sensing Range: -
  • Test Condition: -
  • Voltage - Supply: -
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Output Type: -
  • Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,184
TLE63893GV50XUMA1
Infineon Technologies

IC REG CTRLR BUCK 14DSO

  • Output Type: Transistor Driver
  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 5 V ~ 60 V
  • Frequency - Switching: 360kHz
  • Duty Cycle (Max): 100%
  • Synchronous Rectifier: Yes
  • Clock Sync: Yes
  • Serial Interfaces: -
  • Control Features: Current Limit, Enable, Reset
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-DSO
封裝: 14-SOIC (0.154", 3.90mm Width)
庫存22,644
CYPAP212A1-14SXIT
Infineon Technologies

TYPE-C - SMPS/LP

  • Output Isolation: Isolated
  • Internal Switch(s): No
  • Voltage - Breakdown: 500V
  • Topology: Flyback, Secondary Side SR
  • Voltage - Start Up: -
  • Voltage - Supply (Vcc/Vdd): 85V ~ 265V
  • Duty Cycle: 70%
  • Frequency - Switching: 30kHz
  • Power (Watts): -
  • Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
  • Control Features: Frequency Control, Soft Start
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-14-800
  • Mounting Type: Surface Mount
封裝: -
庫存6,000
TLE9274QXXUMA2
Infineon Technologies

OPTIREG SYST BASIS CHIPS PG-VQFN

  • Applications: -
  • Voltage - Input: 4.5V ~ 28V
  • Number of Outputs: 4
  • Voltage - Output: Multiple
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-31
封裝: -
Request a Quote
CY8C4026LQI-T412
Infineon Technologies

CONSUMER / IOT MCUS

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: I2C, Microwire, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
  • Number of I/O: 19
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 8K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: -
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-UFQFN Exposed Pad
  • Supplier Device Package: 24-QFN (4x4)
封裝: -
Request a Quote
IGC70T120T8RQX1SA1
Infineon Technologies

IGBT CHIP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
IGC50T120T8RLX7SA2
Infineon Technologies

IGBT 1200V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
IPP037N06L3GHKSA1
Infineon Technologies

MOSFET N-CH 60V 90A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 93µA
  • Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封裝: -
Request a Quote
IPT010N08NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V PG-HSOF-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8
  • Package / Case: 8-PowerSFN
封裝: -
Request a Quote
SIDC08D60C8X7SA1
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
CYT3DLABGBQ1AESGS
Infineon Technologies

IC MCU 32BT 4.063MB FLSH 216TQFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
  • Core Size: 32-Bit Dual-Core
  • Speed: 240MHz
  • Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
  • Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
  • Number of I/O: 108
  • Program Memory Size: 4.063MB (4.063M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 128K x 8
  • RAM Size: 384K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 216-QFP
  • Supplier Device Package: 216-TQFP
封裝: -
Request a Quote
S78HL512TC0BHB003
Infineon Technologies

IC FLASH RAM 512MBIT SPI 24FBGA

  • Memory Type: Non-Volatile, Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH, RAM
  • Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
  • Memory Interface: SPI - Octal I/O
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-FBGA (8x8)
封裝: -
庫存6,000
IRF3205ZPBFAKSA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-904
  • Package / Case: TO-220-3
封裝: -
Request a Quote
SPB10N10LG
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 21µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
Request a Quote