頁 457 - Infineon Technologies 產品

零件編號	製造商	描述	封裝	庫存
IPB05N03LB	Infineon Technologies	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3209pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,640
IRFZ44NSPBF	Infineon Technologies	MOSFET N-CH 55V 49A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存47,700
IPI120N04S302AKSA1	Infineon Technologies	MOSFET N-CH 40V 120A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存5,376
IPI80N06S2L05AKSA2	Infineon Technologies	MOSFET N-CH 55V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存3,520
IPD040N03LGBTMA1	Infineon Technologies	MOSFET N-CH 30V 90A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存5,392
BSO204PNTMA1	Infineon Technologies	MOSFET 2P-CH 20V 7A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1513pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,296
IRF7755	Infineon Technologies	MOSFET 2P-CH 20V 3.9A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存95,316
BCR 196T E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	封裝: SC-75, SOT-416	庫存2,432
SMBT3906UE6327HTSA1	Infineon Technologies	TRANS 2PNP 40V 0.2A SC74-6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: PG-SC74-6	封裝: SC-74, SOT-457	庫存6,432
BBY5602WH6327XTSA1	Infineon Technologies	DIODE TUNING 10V 20MA SCD80 Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz Capacitance Ratio: 3.3 Capacitance Ratio Condition: C1/C3 Voltage - Peak Reverse (Max): 10V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	封裝: SC-80	庫存7,872
BA 892 L6327	Infineon Technologies	DIODE RF SW 35V 100MA SCD-80 Diode Type: Standard - Single Voltage - Peak Reverse (Max): 35V Current - Max: 100mA Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500 mOhm @ 10mA, 100MHz Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	封裝: SC-80	庫存4,256
ADM6996IX-AD-T-1	Infineon Technologies	IC SWITCH ETHER 5PORT 128-FQFP Protocol: Ethernet Function: Switch Interface: Parallel Standards: 10/100 Base-T/TX PHY Voltage - Supply: 2.8 V ~ 3.465 V Current - Supply: - Operating Temperature: 0°C ~ 115°C Package / Case: 128-BFQFP Supplier Device Package: PG-BFQFP-128	封裝: 128-BFQFP	庫存17,532
XE164FN16F80LAAFXUMA1	Infineon Technologies	IC MCU 16BIT 128KB FLASH 100LQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 80MHz Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Number of I/O: 75 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 18K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-8	封裝: 100-LQFP Exposed Pad	庫存6,928
TC275T64F200NDCKXUMA1	Infineon Technologies	IC MCU 32BIT 4MB FLASH 176TQFP Core Processor: TriCore? Core Size: 32-Bit Dual-Core Speed: 200MHz Connectivity: ASC, CAN, Ethernet, FlexRay, HSSL, I2C, LIN, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Number of I/O: 112 Program Memory Size: 4MB (4M x 8) Program Memory Type: FLASH EEPROM Size: 64K x 8 RAM Size: 472K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 40x12b, 6 x Sigma-Delta Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,440
XMC4500F100K1024ACXQSA1	Infineon Technologies	IC MCU 32BIT 1MB FLASH 100LQFP Core Processor: ARM? Cortex?-M4 Core Size: 32-Bit Speed: 120MHz Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Number of I/O: 55 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 160K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 24x12b, D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-11	封裝: 100-LQFP Exposed Pad	庫存32,544
TLE4252GATMA1	Infineon Technologies	IC REG LIN POS ADJ 250MA TO263-1 Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): Tracking Voltage - Output (Max): - Voltage Dropout (Max): 0.6V @ 200mA Current - Output: 250mA Current - Quiescent (Iq): 150µA Current - Supply (Max): 25mA PSRR: 60dB (100Hz) Control Features: Enable Protection Features: Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Supplier Device Package: PG-TO263-5-1	封裝: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	庫存21,396
IPP60R380C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 10.6A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封裝: -	Request a Quote
IDWD60E120D7XKSA1	Infineon Technologies	INDUSTRY 14 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存720
IPQC60R010S7XTMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22 Package / Case: 22-PowerBSOP Module	封裝: -	Request a Quote
IAUC120N06S5L032ATMA1	Infineon Technologies	MOSFET N-CH 60V 120A TDSON-8-34 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.2V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	封裝: -	庫存144,486
FS30R06VE3BOMA1	Infineon Technologies	IGBT MODULE 600V 34A 88W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 34 A Power - Max: 88 W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: -	Request a Quote
TLE9868QXB20XUMA2	Infineon Technologies	IC MCU 32BIT 128KB FLASH 48VQFN Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 20MHz Connectivity: LINbus, SSC, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 10 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: 4K x 8 RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 3V ~ 28V Data Converters: A/D 5x10b, 2x14b SAR, Sigma-Delta Oscillator Type: Internal Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-29	封裝: -	庫存7,482
IAUZ30N08S5N186ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-32 Package / Case: 8-PowerTDFN	封裝: -	庫存15,000
S25FS256TDPBHI113	Infineon Technologies	256MB SEMPER NANO FLASH Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 80 MHz Write Cycle Time - Word, Page: 2.3ms Access Time: 6 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封裝: -	庫存300
ISC078N12NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.6V @ 49.6µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSO8 Package / Case: 8-PowerTDFN	封裝: -	Request a Quote
IPB042N03LGATMA1	Infineon Technologies	MOSFET N-CH 30V 70A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote
PEB3264HV1-4P	Infineon Technologies	SLIC FILTER Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Interface: IOM-2, PCM Number of Circuits: 2 Voltage - Supply: 3.135V ~ 3.465V Current - Supply: - Power (Watts): - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 64-QFP Supplier Device Package: P-MQFP-64-1	封裝: -	Request a Quote
CY15B108QN-50BKXI	Infineon Technologies	IC FRAM 8MBIT SPI 50MHZ 24FBGA Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 8Mbit Memory Interface: SPI Clock Frequency: 50 MHz Write Cycle Time - Word, Page: - Access Time: 9 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-FBGA (6x8)	封裝: -	Request a Quote

IPB05N03LB

Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3209pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,640

IRFZ44NSPBF

Infineon Technologies

MOSFET N-CH 55V 49A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存47,700

IPI120N04S302AKSA1

Infineon Technologies

MOSFET N-CH 40V 120A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存5,376

IPI80N06S2L05AKSA2

Infineon Technologies

MOSFET N-CH 55V 80A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存3,520

IPD040N03LGBTMA1

Infineon Technologies

MOSFET N-CH 30V 90A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存5,392

BSO204PNTMA1

Infineon Technologies

MOSFET 2P-CH 20V 7A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1513pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: P-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,296

IRF7755

Infineon Technologies

MOSFET 2P-CH 20V 3.9A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存95,316

BCR 196T E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

封裝: SC-75, SOT-416

庫存2,432

SMBT3906UE6327HTSA1

Infineon Technologies

TRANS 2PNP 40V 0.2A SC74-6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: PG-SC74-6

封裝: SC-74, SOT-457

庫存6,432

BBY5602WH6327XTSA1

Infineon Technologies

DIODE TUNING 10V 20MA SCD80

Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio: 3.3
Capacitance Ratio Condition: C1/C3
Voltage - Peak Reverse (Max): 10V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

封裝: SC-80

庫存7,872

BA 892 L6327

Infineon Technologies

DIODE RF SW 35V 100MA SCD-80

Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 35V
Current - Max: 100mA
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
Power Dissipation (Max): -
Operating Temperature: 150°C (TJ)
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

封裝: SC-80

庫存4,256

ADM6996IX-AD-T-1

Infineon Technologies

IC SWITCH ETHER 5PORT 128-FQFP

Protocol: Ethernet
Function: Switch
Interface: Parallel
Standards: 10/100 Base-T/TX PHY
Voltage - Supply: 2.8 V ~ 3.465 V
Current - Supply: -
Operating Temperature: 0°C ~ 115°C
Package / Case: 128-BFQFP
Supplier Device Package: PG-BFQFP-128

封裝: 128-BFQFP

庫存17,532

XE164FN16F80LAAFXUMA1

Infineon Technologies

IC MCU 16BIT 128KB FLASH 100LQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 80MHz
Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 75
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 18K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 16x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-100-8

封裝: 100-LQFP Exposed Pad

庫存6,928

TC275T64F200NDCKXUMA1

Infineon Technologies

IC MCU 32BIT 4MB FLASH 176TQFP

Core Processor: TriCore?
Core Size: 32-Bit Dual-Core
Speed: 200MHz
Connectivity: ASC, CAN, Ethernet, FlexRay, HSSL, I2C, LIN, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Number of I/O: 112
Program Memory Size: 4MB (4M x 8)
Program Memory Type: FLASH
EEPROM Size: 64K x 8
RAM Size: 472K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,440

XMC4500F100K1024ACXQSA1

Infineon Technologies

IC MCU 32BIT 1MB FLASH 100LQFP

Core Processor: ARM? Cortex?-M4
Core Size: 32-Bit
Speed: 120MHz
Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Number of I/O: 55
Program Memory Size: 1MB (1M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 160K x 8
Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
Data Converters: A/D 24x12b, D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-100-11

封裝: 100-LQFP Exposed Pad

庫存32,544

TLE4252GATMA1

Infineon Technologies

IC REG LIN POS ADJ 250MA TO263-1

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): Tracking
Voltage - Output (Max): -
Voltage Dropout (Max): 0.6V @ 200mA
Current - Output: 250mA
Current - Quiescent (Iq): 150µA
Current - Supply (Max): 25mA
PSRR: 60dB (100Hz)
Control Features: Enable
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Supplier Device Package: PG-TO263-5-1

封裝: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA

庫存21,396

IPP60R380C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 10.6A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封裝: -

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IDWD60E120D7XKSA1

Infineon Technologies

INDUSTRY 14

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存720

IPQC60R010S7XTMA1

Infineon Technologies

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22
Package / Case: 22-PowerBSOP Module

封裝: -

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IAUC120N06S5L032ATMA1

Infineon Technologies

MOSFET N-CH 60V 120A TDSON-8-34

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

封裝: -

庫存144,486

FS30R06VE3BOMA1

Infineon Technologies

IGBT MODULE 600V 34A 88W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 34 A
Power - Max: 88 W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: -

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TLE9868QXB20XUMA2

Infineon Technologies

IC MCU 32BIT 128KB FLASH 48VQFN

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 20MHz
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 10
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: 4K x 8
RAM Size: 4K x 8
Voltage - Supply (Vcc/Vdd): 3V ~ 28V
Data Converters: A/D 5x10b, 2x14b SAR, Sigma-Delta
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-29

封裝: -

庫存7,482

IAUZ30N08S5N186ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TSDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-32
Package / Case: 8-PowerTDFN

封裝: -

庫存15,000

S25FS256TDPBHI113

Infineon Technologies

256MB SEMPER NANO FLASH

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 80 MHz
Write Cycle Time - Word, Page: 2.3ms
Access Time: 6 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封裝: -

庫存300

ISC078N12NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 3.6V @ 49.6µA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 37A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SuperSO8
Package / Case: 8-PowerTDFN

封裝: -

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IPB042N03LGATMA1

Infineon Technologies

MOSFET N-CH 30V 70A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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PEB3264HV1-4P

Infineon Technologies

SLIC FILTER

Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Number of Circuits: 2
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: -
Power (Watts): -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 64-QFP
Supplier Device Package: P-MQFP-64-1

封裝: -

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CY15B108QN-50BKXI

Infineon Technologies

IC FRAM 8MBIT SPI 50MHZ 24FBGA

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 8Mbit
Memory Interface: SPI
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: -
Access Time: 9 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-FBGA (6x8)

封裝: -

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