Infineon Technologies 產品

BCV61CE6327HTSA1

Infineon Technologies

TRANSISTOR NPN DOUBLE SOT-143

• Transistor Type: 2 NPN, Base Collector Junction
• Applications: Current Mirror
• Voltage - Rated: 30V
• Current Rating: 100mA
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: PG-SOT143-4

封裝: TO-253-4, TO-253AA

IRGR4610DTRRPBF

Infineon Technologies

IGBT 600V 16A 77W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 13nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IHW30N100R

Infineon Technologies

IGBT 1000V 60A 412W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
• Power - Max: 412W
• Switching Energy: 2.1mJ (off)
• Input Type: Standard
• Gate Charge: 209nC
• Td (on/off) @ 25°C: -/846ns
• Test Condition: 600V, 30A, 26 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: TO-247-3

IRFH7882TRPBF

Infineon Technologies

MOSFET N-CH 80V 26A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3186pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4W (Ta), 195W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: -
• Supplier Device Package: 8-PQFN (5x6)
• Package / Case: 8-VQFN

封裝: 8-VQFN

IPP60R080P7XKSA1

Infineon Technologies

HIGH POWER_NEW

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封裝: -

IPA075N15N3 G

Infineon Technologies

MOSFET N-CH 150V 43A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 75V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 39W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 43A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

IPP041N12N3 G

Infineon Technologies

MOSFET N-CH 120V 120A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 60V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封裝: TO-220-3

BG5120KH6327XTSA1

Infineon Technologies

MOSFET N-CH DUAL 8V 20MA SOT363

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Test: 5V
• Current Rating: 20mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Power - Output: -
• Voltage - Rated: 8V
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

BFN 19 E6327

Infineon Technologies

TRANS PNP 300V 0.2A SOT-89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

封裝: TO-243AA

BCR166WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 160MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

BTS61101SJAXUMA2

Infineon Technologies

IC SW PWR HISIDE 1CH 8DSOP

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 9 V ~ 16 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 20A
• Rds On (Typ): 80 mOhm
• Input Type: -
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-49

封裝: 8-SOIC (0.154", 3.90mm Width)

BTS3050TFATMA1

Infineon Technologies

IC LOW SIDE PWR SWITCH TO252-3

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 40V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 4A
• Rds On (Typ): 44 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3-313

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

TLE6280GPNT

Infineon Technologies

IC MOTOR CONTROLLER PAR 36DSO

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: -
• Step Resolution: -
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 8 V ~ 20 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: P-DSO-36

封裝: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad

IR2156S

Infineon Technologies

IC CNTL BALLAST 600V 0.5A 14SOIC

• Type: Ballast Controller
• Frequency: 36kHz ~ 44kHz
• Voltage - Supply: 10.5 V ~ 16.5 V
• Current - Supply: 10mA
• Current - Output Source/Sink: -
• Dimming: No
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

封裝: 14-SOIC (0.154", 3.90mm Width)

PEB2086H-V14TR

Infineon Technologies

IC ISDN SUBSCRIB ACCESS 64MQFP

• Function: -
• Interface: S-Bus
• Number of Circuits: -
• Voltage - Supply: 4.75 V ~ 5.25 V
• Current - Supply: 22mA
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 64-QFP
• Supplier Device Package: P-64-MQFP

封裝: 64-QFP

TC233LP32F200NACKXUMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 100TQFP

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: CAN, FlexRay, LIN, QSPI
• Peripherals: DMA, WDT
• Number of I/O: 78
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 192K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V
• Data Converters: A/D 24x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

CY8C6247BZI-AUD54

Infineon Technologies

IC MCU 32BIT 1MB FLASH 124VFBGA

• Core Processor: ARM® Cortex®-M4/M0
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT
• Number of I/O: 104
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 288K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 124-VFBGA
• Supplier Device Package: 124-VFBGA (9x9)

封裝: -

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CY8C21645-24PVXAKA

Infineon Technologies

IC MCU 8BIT 8KB FLASH 48SSOP

• Core Processor: M8C
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, SPI, UART/USART
• Peripherals: LVD, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
• Data Converters: A/D 3x10b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-BSSOP (0.295", 7.50mm Width)
• Supplier Device Package: 48-SSOP

封裝: -

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BSM100GB120DN2KHOSA1

Infineon Technologies

IGBT MOD 1200V 145A 700W

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 145 A
• Power - Max: 700 W
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
• Current - Collector Cutoff (Max): 2 mA
• Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -

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TT140N22KOFHPSA1

Infineon Technologies

SCR MODULE 2.2KV 250A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 159 A
• Current - On State (It (RMS)) (Max): 250 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4000A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封裝: -

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IM240M6Y2BAKSA1

Infineon Technologies

MODULE IPM 3PHASE DIP23A

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 4 A
• Voltage: 600 V
• Voltage - Isolation: 1900Vrms
• Package / Case: 23-DIP Module (0.573", 14.55mm)

封裝: -

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BAS70-04TE6327

Infineon Technologies

DIODE SCHOTTKY

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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IRF7506TR

Infineon Technologies

MOSFET 2P-CH 30V 1.7A MICRO8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.7A
• Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
• Power - Max: 1.25W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: Micro8™

封裝: -

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BTS710336ESAXUMA1

Infineon Technologies

SPOC

• Switch Type: General Purpose
• Number of Outputs: 6
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: -
• Interface: SPI
• Voltage - Load: 6V ~ 18V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 22.5mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-24-42

封裝: -

S25HS512TFAMHM013

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

封裝: -

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SPB20N60C3ATMA1

Infineon Technologies

MOSFET N-CH 600V 20.7A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

CYT2BL5CAAQ0AZSGS

Infineon Technologies

IC MCU 32BT 4.063MB FLSH 100LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 78
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 512K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 57x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

封裝: -

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BSR802NL6327HTSA1

Infineon Technologies

MOSFET N-CH 20V 3.7A SC59

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
• Vgs(th) (Max) @ Id: 750mV @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1447 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 2.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SC59-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -