Infineon Technologies 產品

IRFR13N20DCTRRP

Infineon Technologies

MOSFET N-CH 200V 13A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IPP100N06S3-04

Infineon Technologies

MOSFET N-CH 55V 100A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 314nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14230pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 214W (Tc)
• Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封裝: TO-220-3

IRF7807A

Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

IPB80N04S204ATMA2

Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR4104TRRPBF

Infineon Technologies

MOSFET N-CH 40V 42A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFB4410ZGPBF

Infineon Technologies

MOSFET N-CH 100V 97A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 58A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封裝: TO-220-3

BSZ088N03MSGATMA1

Infineon Technologies

MOSFET N-CH 30V 40A TSDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

PTFA211801F V4

Infineon Technologies

IC FET RF LDMOS 180W H-37260-2

• Transistor Type: LDMOS
• Frequency: 2.14GHz
• Gain: 15.5dB
• Voltage - Test: 28V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 1.2A
• Power - Output: 35W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37260-2

封裝: 2-Flatpack, Fin Leads, Flanged

BCR 139F E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

封裝: SOT-723

IRSM636-015MBTR

Infineon Technologies

MODULES POWER DRIVERS

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: -

封裝: -

BAR6405WH6327XTSA1

Infineon Technologies

DIODE RF PIN 150V 100MA SOT323

• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (Max): 150V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (Max): 250mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

IRU3033CSTR

Infineon Technologies

IC CTRL/REG PWM SWITCH 8-SOIC

• Applications: Controller, Intel Pentium?, II, P55C
• Voltage - Input: 12V
• Number of Outputs: 1
• Voltage - Output: 2 V ~ 3.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

XMC1301Q024F0008ABXUMA1

Infineon Technologies

IC MCU 32BIT 8KB FLASH 24VQFN

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 18
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 13x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 24-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-24-19

封裝: 24-VFQFN Exposed Pad

ESD3V3XU1USE6327XTSA1

Infineon Technologies

TVS DIODE 3.3VWM 11VC TSSLP2-1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3.3V (Max)
• Voltage - Breakdown (Min): 6.5V (Typ)
• Voltage - Clamping (Max) @ Ipp: 11V (Typ)
• Current - Peak Pulse (10/1000µs): 3A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: Ethernet, HDMI
• Capacitance @ Frequency: 0.4pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 2-XFDFN
• Supplier Device Package: TSSLP-2-1

封裝: 2-XFDFN

ESD113B102ELSE6327XTSA1

Infineon Technologies

TVS DIODE 3.6VWM 8VC TSSLP2-4

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 3.6V (Max)
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: 8V
• Current - Peak Pulse (10/1000µs): 3A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: HDMI
• Capacitance @ Frequency: 0.22pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 2-XFDFN
• Supplier Device Package: TSSLP-2-4

封裝: 2-XFDFN

PVI5013RSPBF

Infineon Technologies

OPTOISO 3.75KV 2CH PHVOLT 8-SMT

• Number of Channels: 2
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): -
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 5ms, 250µs (Max)
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Photovoltaic
• Voltage - Output (Max): 8V
• Current - Output / Channel: 1µA
• Voltage - Forward (Vf) (Typ): -
• Current - DC Forward (If) (Max): -
• Vce Saturation (Max): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SMD (300 mil)
• Supplier Device Package: 8-SMD

封裝: 8-SMD (300 mil)

PX8897EDQGR2ER1233AXUMA1

Infineon Technologies

IC REGULATOR PG-VQFN-48-2

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IR3563BMMS03TRP

Infineon Technologies

IC REG BUCK 48VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IAUC120N04S6L012ATMA1

Infineon Technologies

IAUC120N04S6L012ATMA1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 115W (Tc)
• Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封裝: -

TLE95613QXXUMA1

Infineon Technologies

BLDC_DRIVER_IC PG-VQFN-48

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Pre-Driver - Half Bridge (4)
• Interface: SPI
• Technology: NMOS
• Step Resolution: -
• Applications: -
• Current - Output: 250mA
• Voltage - Supply: 6V ~ 28V
• Voltage - Load: 6V ~ 28V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31

封裝: -

IKW50N65RH5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 305 W
• Switching Energy: 230µJ (on), 180µJ (off)
• Input Type: Standard
• Gate Charge: 120 nC
• Td (on/off) @ 25°C: 22ns/180ns
• Test Condition: 400V, 25A, 12Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: -

T2810N18TOFVTXPSA1

Infineon Technologies

SCR MODULE 2200V 5800A DO200AE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 2810 A
• Current - On State (It (RMS)) (Max): 5800 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE

封裝: -

Request a Quote

BSC011N03LSTATMA1

Infineon Technologies

MOSFET N-CH 30V 39A/100A TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 115W (Tc)
• Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8 FL
• Package / Case: 8-PowerTDFN

封裝: -

IRF7341TRPBFXTMA1

Infineon Technologies

MOSFET 2N-CH 55V 4.7A 8DSO-902

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
• Power - Max: 2W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-902

封裝: -

CYAT82687-100AS46

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封裝: -

Request a Quote

BSC0904NSIATMA1

Infineon Technologies

MOSFET N-CH 30V 20A/78A TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-6
• Package / Case: 8-PowerTDFN

封裝: -

SPW11N80C3FKSA1

Infineon Technologies

MOSFET N-CH 800V 11A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 680µA
• Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 156W (Tc)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-1
• Package / Case: TO-247-3

封裝: -

IMT65R030M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

• FET Type: -
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8-1
• Package / Case: 8-PowerSFN

封裝: -