Infineon Technologies 產品

SKW30N60HSFKSA1

Infineon Technologies

IGBT 600V 41A 250W TO247-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 41A
• Current - Collector Pulsed (Icm): 112A
• Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
• Power - Max: 250W
• Switching Energy: 1.15mJ
• Input Type: Standard
• Gate Charge: 141nC
• Td (on/off) @ 25°C: 20ns/250ns
• Test Condition: 400V, 30A, 11 Ohm, 15V
• Reverse Recovery Time (trr): 125ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: TO-247-3

IRF8788PBF

Infineon Technologies

MOSFET N-CH 30V 24A 8-SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5720pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

AUIRF6218STRL

Infineon Technologies

MOSFET P-CH 150V 27A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR3806TRPBF

Infineon Technologies

MOSFET N-CH 60V 43A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 71W (Tc)
• Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

ICE2PCS04GXT

Infineon Technologies

IC PFC CONTROLLER CCM 8DSOP

• Mode: Continuous Conduction (CCM)
• Frequency - Switching: 133kHz
• Current - Startup: 450µA
• Voltage - Supply: 11 V ~ 25 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

IRSM836-045MATR

Infineon Technologies

IC MOTOR DRIVER PAR 37-PQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: AC, Synchronous
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (3)
• Interface: Parallel
• Technology: UMOS
• Step Resolution: -
• Applications: Appliance
• Current - Output: 4A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 37-PowerVQFN
• Supplier Device Package: 37-PQFN (12x12)

封裝: 37-PowerVQFN

IR2136J

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 44-PLCC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 125ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

封裝: 44-LCC (J-Lead), 32 Leads

IR2127PBF

Infineon Technologies

IC MOSFET DRIVER CUR-SENSE 8-DIP

• Driven Configuration: High-Side or Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 12 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

封裝: 8-DIP (0.300", 7.62mm)

IRSM505-025DA2

Infineon Technologies

IC MOTOR DRIVER 500V 23DIP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic
• Load Type: Inductive
• Technology: UMOS
• Rds On (Typ): 3 Ohm
• Current - Output / Channel: 1.5A
• Current - Peak Output: 11A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Through Hole
• Package / Case: 32-PowerDIP Module, 23 Leads
• Supplier Device Package: 23-DIP

封裝: 32-PowerDIP Module, 23 Leads

ICE2QR0680ZXKLA1

Infineon Technologies

IC CTRLR SMPS QUASI-RESON 7DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 800V
• Topology: Flyback
• Voltage - Start Up: 18V
• Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
• Duty Cycle: 50%
• Frequency - Switching: 52kHz
• Power (Watts): 102W
• Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: 7-DIP
• Mounting Type: Through Hole

封裝: 8-DIP (0.300", 7.62mm), 7 Leads

IRS2452AM

Infineon Technologies

IC CONTROLLER GAN 32VQFN

• Type: Class D
• Output Type: 2-Channel (Stereo)
• Max Output Power x Channels @ Load: -
• Voltage - Supply: 12V
• Features: Depop
• Mounting Type: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Supplier Device Package: -
• Package / Case: -

封裝: -

SAF-XC878-16FFI 3V3 AA

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 27MHz
• Connectivity: SPI, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 3.25K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封裝: 64-LQFP

ESD0P8RFL E6327

Infineon Technologies

TVS DIODE 50VWM 15VC TSLP4

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 50V (Max)
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: 15V
• Current - Peak Pulse (10/1000µs): 10A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: Ethernet, HDMI, RF Antenna
• Capacitance @ Frequency: 0.8pF @ 1GHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN
• Supplier Device Package: PG-TSLP-4

封裝: 4-XFDFN

CHL8214-06CRT

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

CSD127BNPSA1

Infineon Technologies

MODULE GATE DRIVER

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: -

封裝: -

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FOA51001B1

Infineon Technologies

LANTIQ COMMUNICATION DEMULTIPLEX

• Type: -
• Circuit: -
• Independent Circuits: -
• Current - Output High, Low: -
• Voltage Supply Source: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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C167CSLMCABXQLA1

Infineon Technologies

IC MCU 16BIT ROMLESS 144MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 111
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 11K x 8
• Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
• Data Converters: A/D 24x10b
• Oscillator Type: External
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-BQFP
• Supplier Device Package: P-MQFP-144-8

封裝: -

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FF300R12ME4BOSA1

Infineon Technologies

IGBT MOD 1200V 450A 1600W

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 450 A
• Power - Max: 1600 W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -

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FF750R12ME7B11BPSA1

Infineon Technologies

ECONODUAL 3 WITH TRENCHSTOP IGBT

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 750 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A
• Current - Collector Cutoff (Max): 45 µA
• Input Capacitance (Cies) @ Vce: 115 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONOD

封裝: -

DD1200S45KL3B5NOSA1

Infineon Technologies

DIODE MOD GP 4500V AIHV130-4

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500 V
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 1200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -50°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: A-IHV130-4

封裝: -

A2C02865700A

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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S25FL256SDSBHVA13

Infineon Technologies

IC FLASH 256MBIT SPI/QUAD 24BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 256Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 80 MHz
• Write Cycle Time - Word, Page: 750µs
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (8x6)

封裝: -

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BSZ110N06NS3GATMA1

Infineon Technologies

MOSFET N-CH 60V 20A 8TSDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 23µA
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerVDFN

封裝: -

FF600R12ME4EB11BPSA1

Infineon Technologies

MEDIUM POWER ECONO

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 600 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONOD-3

封裝: -

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S70KS1282GABHA020

Infineon Technologies

IC PSRAM 128MBIT HYPERBUS 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 128Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

封裝: -

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IPB60R199CPATMA1

Infineon Technologies

MOSFET N-CH 600V 16A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 660µA
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 139W (Tc)
• Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

CYAT837AZS88-42002

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (14x20)

封裝: -

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FS450R17OE4PBOSA1

Infineon Technologies

IGBT MOD 1700V 900A 20MW

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 900 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -