頁 367 - Infineon Technologies 產品

零件編號	製造商	描述	封裝	庫存
IRG7CH42UEF	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 5A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存5,680
SKW25N120FKSA1	Infineon Technologies	IGBT 1200V 46A 313W TO247-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 46A Current - Collector Pulsed (Icm): 84A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A Power - Max: 313W Switching Energy: 3.7mJ Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: 45ns/730ns Test Condition: 800V, 25A, 22 Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封裝: TO-247-3	庫存21,612
BUZ73LHXKSA1	Infineon Technologies	MOSFET N-CH 200V 7A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封裝: TO-220-3	庫存7,472
IPP60R600CPXKSA1	Infineon Technologies	MOSFET N-CH 600V 6.1A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封裝: TO-220-3	庫存5,808
SPB47N10	Infineon Technologies	MOSFET N-CH 100V 47A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存419,028
IRF9Z34NL	Infineon Technologies	MOSFET P-CH 55V 19A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存10,116
IRFIZ34E	Infineon Technologies	MOSFET N-CH 60V 21A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存6,208
IPI072N10N3GXKSA1	Infineon Technologies	MOSFET N-CH 100V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存6,976
BSC320N20NS3 G	Infineon Technologies	MOSFET N-CH 200V 36A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封裝: 8-PowerTDFN	庫存283,554
BFN38H6327XTSA1	Infineon Technologies	TRANS NPN 300V 0.2A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Power - Max: 1.5W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	封裝: TO-261-4, TO-261AA	庫存4,896
AUIR3313STRL	Infineon Technologies	IC DVR CURR SENSE PROG D2PAK-5 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 6 V ~ 32 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 23A Rds On (Typ): 5.5 mOhm Input Type: Non-Inverting Features: - Fault Protection: Current Limiting (Adjustable), Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB Supplier Device Package: D2PAK	封裝: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	庫存13,992
BTM7742GXUMA1	Infineon Technologies	IC MOTOR DRIVER PAR 36DSO Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 12A Voltage - Supply: 5.5 V ~ 28 V Voltage - Load: 5.5 V ~ 28 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 36-BSSOP (0.295", 7.50mm Width) Supplier Device Package: -	封裝: 36-BSSOP (0.295", 7.50mm Width)	庫存7,584
TLE8457ASJXUMA1	Infineon Technologies	IC LIN TRANSCEIVER DSO-8 Type: Transceiver Protocol: LIN Number of Drivers/Receivers: 1/1 Duplex: - Receiver Hysteresis: 175mV Data Rate: - Voltage - Supply: 5V Operating Temperature: -40°C ~ 150°C Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,280
C167CRLMHABXUMA2	Infineon Technologies	IC MCU 16BIT ROMLESS 144MQFP Core Processor: C166 Core Size: 16-Bit Speed: 25MHz Connectivity: CAN, EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 111 Program Memory Size: - Program Memory Type: ROMless EEPROM Size: - RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: External Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: 144-BQFP Supplier Device Package: PG-MQFP-144	封裝: 144-BQFP	庫存4,464
SLE66R35RNBX1SA1	Infineon Technologies	IC SECURITY CHIP CARD CTLR Applications: Security Core Processor: - Program Memory Type: - Controller Series: - RAM Size: - Interface: ISO14443-3 Type A Number of I/O: - Voltage - Supply: - Operating Temperature: -25°C ~ 70°C Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,472
BGA751L7E6327XTSA1	Infineon Technologies	IC AMP MMIC SGL-BAND LN TSLP7-1 Frequency: 800MHz, 900MHz P1dB: -5dBm (0.3mW) Gain: 15.8dB Noise Figure: 1.05dB RF Type: UMTS Voltage - Supply: 2.6 V ~ 3 V Current - Supply: 3.3mA Test Frequency: 800MHz Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: TSLP-7-1	封裝: 6-XFDFN Exposed Pad	庫存8,406
TLE9251SJXUMA1	Infineon Technologies	IC TRANSCEIVER 1/1 DSO-8 Type: Transceiver Protocol: CAN Number of Drivers/Receivers: 1/1 Duplex: - Receiver Hysteresis: 30mV Data Rate: 5Mbps Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存2,016
FP75R12N2T7BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2B-711 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A Current - Collector Cutoff (Max): 14 µA Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2B	封裝: -	庫存12
FF2MR12KM1HOSA1	Infineon Technologies	SIC 2N-CH 1200V 500A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	封裝: -	庫存30
DHP1140N08P5AUMA1	Infineon Technologies	INT. POWERSTAGE/DRIVER PG-IQFN-2 Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote
CYT2B64BADQ0AZEGS	Infineon Technologies	IC MCU 32BIT 576KB FLASH 80LQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 80MHz Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT Number of I/O: 59 Program Memory Size: 576KB (576K x 8) Program Memory Type: FLASH EEPROM Size: 64K x 8 RAM Size: 64K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 28x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	封裝: -	Request a Quote
IMDQ75R016M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs(th) (Max) @ Id: 5.6V @ 14.9mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 384W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封裝: -	Request a Quote
FF150R12YT3BOMA1	Infineon Technologies	IGBT MOD 1200V 200A 625W IGBT Type: - Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 200 A Power - Max: 625 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: -	Request a Quote
IR3899AMTRPBFXUMA1	Infineon Technologies	IFX POL, PG-IQFN-24 Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 4.5V Voltage - Input (Max): 17V Voltage - Output (Min/Fixed): 0.6V Voltage - Output (Max): 6V Current - Output: 9A Frequency - Switching: 600kHz ~ 2MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 19-PowerVFQFN Supplier Device Package: PG-IQFN-19-900	封裝: -	Request a Quote
S25FS064SDSMFB013	Infineon Technologies	IC FLASH 64MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 80 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote
CY8C4125LQS-S413T	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 34 Program Memory Size: 32KB (32K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 40-UFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	封裝: -	Request a Quote
D2000U65X122XPSA1	Infineon Technologies	HIGH POWER THYR / DIO Structure: - Number of SCRs, Diodes: - Voltage - Off State: - Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): - Current - Hold (Ih) (Max): - Operating Temperature: - Mounting Type: - Package / Case: -	封裝: -	Request a Quote
IRFC9130NB	Infineon Technologies	MOSFET 100V 14A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封裝: -	Request a Quote

IRG7CH42UEF

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 5A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 157nC
Td (on/off) @ 25°C: 25ns/229ns
Test Condition: 600V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存5,680

SKW25N120FKSA1

Infineon Technologies

IGBT 1200V 46A 313W TO247-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 46A
Current - Collector Pulsed (Icm): 84A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Power - Max: 313W
Switching Energy: 3.7mJ
Input Type: Standard
Gate Charge: 225nC
Td (on/off) @ 25°C: 45ns/730ns
Test Condition: 800V, 25A, 22 Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封裝: TO-247-3

庫存21,612

BUZ73LHXKSA1

Infineon Technologies

MOSFET N-CH 200V 7A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封裝: TO-220-3

庫存7,472

IPP60R600CPXKSA1

Infineon Technologies

MOSFET N-CH 600V 6.1A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封裝: TO-220-3

庫存5,808

SPB47N10

Infineon Technologies

MOSFET N-CH 100V 47A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 175W (Tc)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存419,028

IRF9Z34NL

Infineon Technologies

MOSFET P-CH 55V 19A TO-262

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存10,116

IRFIZ34E

Infineon Technologies

MOSFET N-CH 60V 21A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 42 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB Full-Pak
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存6,208

IPI072N10N3GXKSA1

Infineon Technologies

MOSFET N-CH 100V 80A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存6,976

BSC320N20NS3 G

Infineon Technologies

MOSFET N-CH 200V 36A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

庫存283,554

BFN38H6327XTSA1

Infineon Technologies

TRANS NPN 300V 0.2A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Power - Max: 1.5W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

封裝: TO-261-4, TO-261AA

庫存4,896

AUIR3313STRL

Infineon Technologies

IC DVR CURR SENSE PROG D2PAK-5

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 6 V ~ 32 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Rds On (Typ): 5.5 mOhm
Input Type: Non-Inverting
Features: -
Fault Protection: Current Limiting (Adjustable), Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Supplier Device Package: D2PAK

封裝: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

庫存13,992

BTM7742GXUMA1

Infineon Technologies

IC MOTOR DRIVER PAR 36DSO

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 12A
Voltage - Supply: 5.5 V ~ 28 V
Voltage - Load: 5.5 V ~ 28 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Supplier Device Package: -

封裝: 36-BSSOP (0.295", 7.50mm Width)

庫存7,584

TLE8457ASJXUMA1

Infineon Technologies

IC LIN TRANSCEIVER DSO-8

Type: Transceiver
Protocol: LIN
Number of Drivers/Receivers: 1/1
Duplex: -
Receiver Hysteresis: 175mV
Data Rate: -
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 150°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,280

C167CRLMHABXUMA2

Infineon Technologies

IC MCU 16BIT ROMLESS 144MQFP

Core Processor: C166
Core Size: 16-Bit
Speed: 25MHz
Connectivity: CAN, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 111
Program Memory Size: -
Program Memory Type: ROMless
EEPROM Size: -
RAM Size: 4K x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 16x10b
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: 144-BQFP
Supplier Device Package: PG-MQFP-144

封裝: 144-BQFP

庫存4,464

SLE66R35RNBX1SA1

Infineon Technologies

IC SECURITY CHIP CARD CTLR

Applications: Security
Core Processor: -
Program Memory Type: -
Controller Series: -
RAM Size: -
Interface: ISO14443-3 Type A
Number of I/O: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 70°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,472

BGA751L7E6327XTSA1

Infineon Technologies

IC AMP MMIC SGL-BAND LN TSLP7-1

Frequency: 800MHz, 900MHz
P1dB: -5dBm (0.3mW)
Gain: 15.8dB
Noise Figure: 1.05dB
RF Type: UMTS
Voltage - Supply: 2.6 V ~ 3 V
Current - Supply: 3.3mA
Test Frequency: 800MHz
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: TSLP-7-1

封裝: 6-XFDFN Exposed Pad

庫存8,406

TLE9251SJXUMA1

Infineon Technologies

IC TRANSCEIVER 1/1 DSO-8

Type: Transceiver
Protocol: CAN
Number of Drivers/Receivers: 1/1
Duplex: -
Receiver Hysteresis: 30mV
Data Rate: 5Mbps
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存2,016

FP75R12N2T7BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-711

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A
Current - Collector Cutoff (Max): 14 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2B

封裝: -

庫存12

FF2MR12KM1HOSA1

Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MM

封裝: -

庫存30

DHP1140N08P5AUMA1

Infineon Technologies

INT. POWERSTAGE/DRIVER PG-IQFN-2

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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CYT2B64BADQ0AZEGS

Infineon Technologies

IC MCU 32BIT 576KB FLASH 80LQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 80MHz
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Number of I/O: 59
Program Memory Size: 576KB (576K x 8)
Program Memory Type: FLASH
EEPROM Size: 64K x 8
RAM Size: 64K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 28x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

封裝: -

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IMDQ75R016M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 750 V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 384W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封裝: -

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FF150R12YT3BOMA1

Infineon Technologies

IGBT MOD 1200V 200A 625W

IGBT Type: -
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Power - Max: 625 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: -

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IR3899AMTRPBFXUMA1

Infineon Technologies

IFX POL, PG-IQFN-24

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 17V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 6V
Current - Output: 9A
Frequency - Switching: 600kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 19-PowerVFQFN
Supplier Device Package: PG-IQFN-19-900

封裝: -

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S25FS064SDSMFB013

Infineon Technologies

IC FLASH 64MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 80 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: -

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CY8C4125LQS-S413T

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 34
Program Memory Size: 32KB (32K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 4K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

封裝: -

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D2000U65X122XPSA1

Infineon Technologies

HIGH POWER THYR / DIO

Structure: -
Number of SCRs, Diodes: -
Voltage - Off State: -
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): -
Current - Hold (Ih) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -

封裝: -

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IRFC9130NB

Infineon Technologies

MOSFET 100V 14A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 14A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封裝: -

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