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Infineon Technologies 產品

記錄 16,988
頁  356/607
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SKB02N60E3266ATMA1
Infineon Technologies

IGBT 600V 6A 30W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
  • Power - Max: 30W
  • Switching Energy: 64µJ
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 20ns/259ns
  • Test Condition: 400V, 2A, 118 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,968
SGP30N60HSXKSA1
Infineon Technologies

IGBT 600V 41A 250W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 112A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 1.15mJ
  • Input Type: Standard
  • Gate Charge: 141nC
  • Td (on/off) @ 25°C: 20ns/250ns
  • Test Condition: 400V, 30A, 11 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存2,784
IPD12CN10NGBUMA1
Infineon Technologies

MOSFET N-CH 100V 67A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 67A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,456
hot IRL3303PBF
Infineon Technologies

MOSFET N-CH 30V 38A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存5,216
hot IRF2804STRL-7P
Infineon Technologies

MOSFET N-CH 40V 160A D2PAK7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
封裝: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
庫存296,940
hot IRF9410TRPBF
Infineon Technologies

MOSFET N-CH 30V 7A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存975,432
IPA80R310CEXKSA2
Infineon Technologies

MOSFET N-CH 800V TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 310 mOhm @ 11A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220FP
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存9,720
IRL7472L1TRPBF
Infineon Technologies

MOSFET N-CH 40V 375A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 20082pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.59 mOhm @ 195A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET L8
  • Package / Case: DirectFET? Isometric L8
封裝: DirectFET? Isometric L8
庫存3,408
IPP60R125P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 219W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 11.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存12,060
BA595E6433HTMA1
Infineon Technologies

DIODE RF SW 50V 50MA SOD-323

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 50V
  • Current - Max: 50mA
  • Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
  • Resistance @ If, F: 7 Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: PG-SOD323-2
封裝: SC-76, SOD-323
庫存4,208
IR3570BMTR1PBF
Infineon Technologies

IC REG CTRLR DL BUCK PWM 40QFN

  • Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
  • Voltage - Input: 3.3V
  • Number of Outputs: 2
  • Voltage - Output: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 40-VFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (5x5)
封裝: 40-VFQFN Exposed Pad
庫存2,592
hot IPS1031PBF
Infineon Technologies

IC IPS SW LOW SIDE TO-220-3

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 28V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 9.5A
  • Rds On (Typ): 40 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存75,600
hot TLE7209-2R
Infineon Technologies

IC MOTOR DRIVER SPI 20DSO

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: SPI
  • Technology: CMOS
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 5A
  • Voltage - Supply: 5 V ~ 28 V
  • Voltage - Load: 5 V ~ 28 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
  • Supplier Device Package: PG-DSO-20-37
封裝: 20-PowerSOIC (0.433", 11.00mm Width)
庫存3,364,368
TLE72593GEXUMA3
Infineon Technologies

IC TXRX HIGH-END LIN 8DSOP

  • Type: Transceiver
  • Protocol: LIN
  • Number of Drivers/Receivers: 1/1
  • Duplex: -
  • Receiver Hysteresis: 120mV
  • Data Rate: 20kbps
  • Voltage - Supply: 5.5 V ~ 27 V
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-16
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存3,424
TLE4926CHTE6547HAMA1
Infineon Technologies

IC SPEED SENSOR MAGN PG-SSO-3

  • Type: -
  • Technology: -
  • Axis: -
  • Output Type: -
  • Sensing Range: -
  • Voltage - Supply: -
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Resolution: -
  • Bandwidth: -
  • Operating Temperature: -
  • Features: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,070
IIPC20S4N04X2SA2
Infineon Technologies

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
CY15V108QN-20LPXIT
Infineon Technologies

IC FRAM 8MBIT SPI 20MHZ 8GQFN

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 8Mbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20 ns
  • Voltage - Supply: 1.71V ~ 1.89V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UQFN
  • Supplier Device Package: 8-GQFN (3.23x3.28)
封裝: -
Request a Quote
ISK036N03LM5AULA1
Infineon Technologies

TRENCH <= 40V PG-VSON-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 11W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-VSON-6-1
  • Package / Case: 6-PowerVDFN
封裝: -
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BAW56WE6433
Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT323

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 150 nA @ 70 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: -
Request a Quote
CY9AF341MABGL-G-102K9E1
Infineon Technologies

IC MCU 32BIT 96KB FLASH 96FBGA

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 40MHz
  • Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 66
  • Program Memory Size: 96KB (96K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
  • Data Converters: A/D 17x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 96-LFBGA
  • Supplier Device Package: 96-FBGA (6x6)
封裝: -
Request a Quote
FP75R12N2T4PBPSA1
Infineon Technologies

IGBT MODULE LOW POWER ECONO

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
BSM50GP120BOSA1
Infineon Technologies

IGBT MODULE 1200V 50A

  • IGBT Type: -
  • Configuration: 3 Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封裝: -
Request a Quote
BSM300GB120DLCE3256HOSA1
Infineon Technologies

BSM300GB120 - INSULATED GATE BIP

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 625 A
  • Power - Max: 2500 W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封裝: -
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PXE1610CDNPMFD10XTMA1
Infineon Technologies

PXE1610CDN - DIGITAL DUAL OUTPUT

  • Applications: Controller, Intel VR12.5
  • Voltage - Input: 3V ~ 3.6V
  • Number of Outputs: 6
  • Voltage - Output: Programmable
  • Operating Temperature: -5°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-VQFN (6x6)
封裝: -
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IMW65R107M1HXKSA1
Infineon Technologies

MOSFET 650V NCH SIC TRENCH

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
封裝: -
庫存1,287
IPC60R190E6UNSAWNX6SA1
Infineon Technologies

MOSFET N-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
IPN70R750P7SATMA1
Infineon Technologies

MOSFET N-CH 700V 6.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 6.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA
封裝: -
庫存42,627
CY8C4124PVA-S412
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 24
  • Program Memory Size: 16KB (16K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 28-SSOP
封裝: -
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