頁 347 - Infineon Technologies 產品

零件編號	製造商	描述	封裝	庫存
IPB049N06L3GATMA1	Infineon Technologies	MOSFET N-CH 60V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 58µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,512
BUZ73A H	Infineon Technologies	MOSFET N-CH 200V 5.5A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封裝: TO-220-3	庫存426,132
IPD90N06S4L06ATMA1	Infineon Technologies	MOSFET N-CH 60V 90A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存3,408
IPB80N06S2L05ATMA1	Infineon Technologies	MOSFET N-CH 55V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,864
IRF6616	Infineon Technologies	MOSFET N-CH 30V 19A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3765pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 19A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	封裝: DirectFET? Isometric MX	庫存6,160
SPP20N60S5	Infineon Technologies	MOSFET N-CH 650V 20A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封裝: TO-220-3	庫存789,084
SIPC26N50C3X1SA2	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,328
BSC0902NS	Infineon Technologies	MOSFET N-CH 30V 100A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封裝: 8-PowerTDFN	庫存3,127,212
PTFA210701FV4R250XTMA1	Infineon Technologies	IC FET RF LDMOS 70W H-37265-2 Transistor Type: LDMOS Frequency: 2.14GHz Gain: 16.5dB Voltage - Test: 30V Current Rating: 10µA Noise Figure: - Current - Test: 550mA Power - Output: 18W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37265-2	封裝: 2-Flatpack, Fin Leads, Flanged	庫存7,488
BFG 193 E6433	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	封裝: TO-261-4, TO-261AA	庫存4,000
BFQ790H6327XTSA1	Infineon Technologies	RF BIP TRANSISTORS Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6.1V Frequency - Transition: 1.85GHz Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz Gain: 17dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封裝: TO-243AA	庫存2,112
BFR340FH6327XTSA1	Infineon Technologies	TRANS RF NPN 9V 20MA 3TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz Gain: 13dB ~ 28dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	封裝: SOT-723	庫存3,360
BAT 17 E6327	Infineon Technologies	DIODE SCHOTTKY 4V 130MA SOT-23 Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 4V Current - Max: 130mA Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15 Ohm @ 5mA, 10kHz Power Dissipation (Max): 150mW Operating Temperature: 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存111,234
TLS805B1LDVXUMA1	Infineon Technologies	IC REG LINEAR 50MA 10TSON Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 50mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-TFDFN Exposed Pad Supplier Device Package: PG-TSON-10	封裝: 10-TFDFN Exposed Pad	庫存36,786
IR3871MTRPBF	Infineon Technologies	IC REG BUCK ADJ 8A SYNC PQFN Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 3V Voltage - Input (Max): 26V Voltage - Output (Min/Fixed): 0.5V Voltage - Output (Max): 12V Current - Output: 8A Frequency - Switching: Up to 1MHz Synchronous Rectifier: Yes Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 17-PowerVQFN Supplier Device Package: PQFN (5x6)	封裝: 17-PowerVQFN	庫存7,424
IR2110STR	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 16-SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 3.3 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 500V Rise / Fall Time (Typ): 25ns, 17ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存15,780
PEB 3081 H V1.4	Infineon Technologies	IC S-BUS INTERFACE EXT MQFP44 Function: S / T Bus Interface Transceiver Interface: IOM-2, ISDN, SCI Number of Circuits: 1 Voltage - Supply: 3.3V Current - Supply: 30mA Power (Watts): - Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 44-QFP Supplier Device Package: P-MQFP-44	封裝: 44-QFP	庫存4,464
XMC1402Q048X0064AAXUMA1	Infineon Technologies	IC MCU 32BIT 64KB FLASH 48VQFN Core Processor: ARM? Cortex?-M0 Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, LIN, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Number of I/O: 34 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 12x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-73	封裝: 48-VFQFN Exposed Pad	庫存3,232
TLE49632MXTSA1	Infineon Technologies	IC HALL EFFECT LATCH SOT23-3 Function: - Technology: - Polarization: - Sensing Range: - Test Condition: - Voltage - Supply: - Current - Supply (Max): - Current - Output (Max): - Output Type: - Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,904
BGT80E6327XTSA1	Infineon Technologies	IC MMIC 119WFWLB Type: TxRx Only RF Family/Standard: Cellular Protocol: LTE, WiMAX Modulation: QPSK Frequency: 71GHz ~ 86GHz Data Rate (Max): - Power - Output: 12dBm Sensitivity: - Memory Size: - Serial Interfaces: SPI GPIO: 24 Voltage - Supply: 12V Current - Receiving: - Current - Transmitting: - Operating Temperature: - Package / Case: 119-WFBGA	封裝: 119-WFBGA	庫存6,372
D1251S45TXPSA1	Infineon Technologies	DIODE GEN PURP 4.5KV 1530A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 1530A Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 140°C	封裝: -	Request a Quote
S6J311DJACSE20000	Infineon Technologies	TRAVEO-55NM Core Processor: ARM® Cortex®-R5 Core Size: 32-Bit Speed: 144MHz Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 150 Program Memory Size: 3MB (3M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 320K x 8 Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V Data Converters: A/D 64x12b SAR Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Supplier Device Package: 176-LQFP (24x24)	封裝: -	Request a Quote
IKY100N120CH7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 212A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 212 A Current - Collector Pulsed (Icm): 400 A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A Power - Max: 721 W Switching Energy: 2.37mJ (on), 2.65mJ (off) Input Type: Standard Gate Charge: 714 nC Td (on/off) @ 25°C: 44ns/359ns Test Condition: - Reverse Recovery Time (trr): 99 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: PG-TO247-4-U10	封裝: -	庫存363
CY8C4146LQE-S273T	Infineon Technologies	IC MCU 32BIT 64KB FLASH 40QFN Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT Number of I/O: 34 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount, Wettable Flank Package / Case: 40-UFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	封裝: -	Request a Quote
IMBG120R090M1HXTMA1	Infineon Technologies	SICFET N-CH 1.2KV 26A TO263 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.7V @ 3.7mA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V Vgs (Max): +18V, -15V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	封裝: -	庫存4,968
IRF8714TRPBFXTMA1	Infineon Technologies	TRENCH <= 40V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存11,520
CYT2B94CACQ0AZSGST	Infineon Technologies	IC MCU 32BT 2.0625MB FLSH 80LQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 160MHz Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Number of I/O: 63 Program Memory Size: 2.0625MB (2.0625M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 256K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 52x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	封裝: -	庫存1,500
PEB2047NV2-1	Infineon Technologies	IC MEMORY 44PLCC Type: Memory Applications: - Mounting Type: Surface Mount Package / Case: 44-LCC (J-Lead) Supplier Device Package: 44-PLCC (16.6x16.6)	封裝: -	Request a Quote

IPB049N06L3GATMA1

Infineon Technologies

MOSFET N-CH 60V 80A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,512

BUZ73A H

Infineon Technologies

MOSFET N-CH 200V 5.5A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封裝: TO-220-3

庫存426,132

IPD90N06S4L06ATMA1

Infineon Technologies

MOSFET N-CH 60V 90A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存3,408

IPB80N06S2L05ATMA1

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,864

IRF6616

Infineon Technologies

MOSFET N-CH 30V 19A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3765pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 19A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MX
Package / Case: DirectFET? Isometric MX

封裝: DirectFET? Isometric MX

庫存6,160

SPP20N60S5

Infineon Technologies

MOSFET N-CH 650V 20A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封裝: TO-220-3

庫存789,084

SIPC26N50C3X1SA2

Infineon Technologies

TRANSISTOR N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,328

BSC0902NS

Infineon Technologies

MOSFET N-CH 30V 100A 8TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

庫存3,127,212

PTFA210701FV4R250XTMA1

Infineon Technologies

IC FET RF LDMOS 70W H-37265-2

Transistor Type: LDMOS
Frequency: 2.14GHz
Gain: 16.5dB
Voltage - Test: 30V
Current Rating: 10µA
Noise Figure: -
Current - Test: 550mA
Power - Output: 18W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads, Flanged
Supplier Device Package: H-37265-2

封裝: 2-Flatpack, Fin Leads, Flanged

庫存7,488

BFG 193 E6433

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

封裝: TO-261-4, TO-261AA

庫存4,000

BFQ790H6327XTSA1

Infineon Technologies

RF BIP TRANSISTORS

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6.1V
Frequency - Transition: 1.85GHz
Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz
Gain: 17dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封裝: TO-243AA

庫存2,112

BFR340FH6327XTSA1

Infineon Technologies

TRANS RF NPN 9V 20MA 3TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Gain: 13dB ~ 28dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

封裝: SOT-723

庫存3,360

BAT 17 E6327

Infineon Technologies

DIODE SCHOTTKY 4V 130MA SOT-23

Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 4V
Current - Max: 130mA
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15 Ohm @ 5mA, 10kHz
Power Dissipation (Max): 150mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存111,234

TLS805B1LDVXUMA1

Infineon Technologies

IC REG LINEAR 50MA 10TSON

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 50mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-TFDFN Exposed Pad
Supplier Device Package: PG-TSON-10

封裝: 10-TFDFN Exposed Pad

庫存36,786

IR3871MTRPBF

Infineon Technologies

IC REG BUCK ADJ 8A SYNC PQFN

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 3V
Voltage - Input (Max): 26V
Voltage - Output (Min/Fixed): 0.5V
Voltage - Output (Max): 12V
Current - Output: 8A
Frequency - Switching: Up to 1MHz
Synchronous Rectifier: Yes
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-PowerVQFN
Supplier Device Package: PQFN (5x6)

封裝: 17-PowerVQFN

庫存7,424

IR2110STR

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16-SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 3.3 V ~ 20 V
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500V
Rise / Fall Time (Typ): 25ns, 17ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存15,780

PEB 3081 H V1.4

Infineon Technologies

IC S-BUS INTERFACE EXT MQFP44

Function: S / T Bus Interface Transceiver
Interface: IOM-2, ISDN, SCI
Number of Circuits: 1
Voltage - Supply: 3.3V
Current - Supply: 30mA
Power (Watts): -
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 44-QFP
Supplier Device Package: P-MQFP-44

封裝: 44-QFP

庫存4,464

XMC1402Q048X0064AAXUMA1

Infineon Technologies

IC MCU 32BIT 64KB FLASH 48VQFN

Core Processor: ARM? Cortex?-M0
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, LIN, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Number of I/O: 34
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: A/D 12x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-73

封裝: 48-VFQFN Exposed Pad

庫存3,232

TLE49632MXTSA1

Infineon Technologies

IC HALL EFFECT LATCH SOT23-3

Function: -
Technology: -
Polarization: -
Sensing Range: -
Test Condition: -
Voltage - Supply: -
Current - Supply (Max): -
Current - Output (Max): -
Output Type: -
Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,904

BGT80E6327XTSA1

Infineon Technologies

IC MMIC 119WFWLB

Type: TxRx Only
RF Family/Standard: Cellular
Protocol: LTE, WiMAX
Modulation: QPSK
Frequency: 71GHz ~ 86GHz
Data Rate (Max): -
Power - Output: 12dBm
Sensitivity: -
Memory Size: -
Serial Interfaces: SPI
GPIO: 24
Voltage - Supply: 12V
Current - Receiving: -
Current - Transmitting: -
Operating Temperature: -
Package / Case: 119-WFBGA

封裝: 119-WFBGA

庫存6,372

D1251S45TXPSA1

Infineon Technologies

DIODE GEN PURP 4.5KV 1530A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 1530A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 140°C

封裝: -

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S6J311DJACSE20000

Infineon Technologies

TRAVEO-55NM

Core Processor: ARM® Cortex®-R5
Core Size: 32-Bit
Speed: 144MHz
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 150
Program Memory Size: 3MB (3M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 320K x 8
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Data Converters: A/D 64x12b SAR
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Supplier Device Package: 176-LQFP (24x24)

封裝: -

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IKY100N120CH7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 212A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 212 A
Current - Collector Pulsed (Icm): 400 A
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
Power - Max: 721 W
Switching Energy: 2.37mJ (on), 2.65mJ (off)
Input Type: Standard
Gate Charge: 714 nC
Td (on/off) @ 25°C: 44ns/359ns
Test Condition: -
Reverse Recovery Time (trr): 99 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4-U10

封裝: -

庫存363

CY8C4146LQE-S273T

Infineon Technologies

IC MCU 32BIT 64KB FLASH 40QFN

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Number of I/O: 34
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 40-UFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

封裝: -

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IMBG120R090M1HXTMA1

Infineon Technologies

SICFET N-CH 1.2KV 26A TO263

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V
Vgs (Max): +18V, -15V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封裝: -

庫存4,968

IRF8714TRPBFXTMA1

Infineon Technologies

TRENCH <= 40V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存11,520

CYT2B94CACQ0AZSGST

Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 80LQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 160MHz
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Number of I/O: 63
Program Memory Size: 2.0625MB (2.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
RAM Size: 256K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 52x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

封裝: -

庫存1,500

PEB2047NV2-1

Infineon Technologies

IC MEMORY 44PLCC

Type: Memory
Applications: -
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Supplier Device Package: 44-PLCC (16.6x16.6)

封裝: -

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