頁 34 - Infineon Technologies 產品

零件編號	製造商	描述	封裝	庫存
IRGS4086PBF	Infineon Technologies	IGBT 300V 70A 160W D2PAK IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A Power - Max: 160W Switching Energy: - Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 36ns/112ns Test Condition: 196V, 25A, 10 Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存35,400
IRGP6690D-EPBF	Infineon Technologies	IGBT 600V 90A TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A Power - Max: 483W Switching Energy: 2.4mJ (on), 2.2mJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: 85ns/222ns Test Condition: 400V, 75A, 10 Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	封裝: TO-247-3	庫存12,876
IRFH5106TRPBF	Infineon Technologies	MOSFET N-CH 60V 21A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 114W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	封裝: 8-PowerVDFN	庫存61,512
IRLR3714TRRPBF	Infineon Technologies	MOSFET N-CH 20V 36A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存7,280
AUIRFS8405TRL	Infineon Technologies	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 163W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,040
AUIRF4905STRL	Infineon Technologies	MOSFET P-CH 55V 42A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,608
IRFS7734TRL7PP	Infineon Technologies	MOSFET N-CH 75V 183A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 197A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 3.05 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	封裝: TO-263-7, D2Pak (6 Leads + Tab)	庫存5,184
PTFB092707FHV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,936
BCR 198T E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	封裝: SC-75, SOT-416	庫存4,272
BB 659C-02V E7912	Infineon Technologies	DIODE VARIABLE 30V 20MA SC-79 Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz Capacitance Ratio: 15.3 Capacitance Ratio Condition: C1/C28 Voltage - Peak Reverse (Max): 30V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2	封裝: SC-79, SOD-523	庫存4,464
IR3584MTRPBF	Infineon Technologies	IC CONTROLLER DIGITAL QFN Applications: Controller, Intel VR12, VR12.5 Voltage - Input: 3.3V Number of Outputs: 2 Voltage - Output: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Supplier Device Package: 40-QFN (5x5)	封裝: 40-VFQFN Exposed Pad	庫存314,460
IRS29831PBF	Infineon Technologies	IC LED DRIVER OFFLINE DIM 8DIP Type: AC DC Offline Switcher Topology: Flyback, Step-Down (Buck), Step-Up (Boost) Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 11.5V Voltage - Supply (Max): 18V Voltage - Output: - Current - Output / Channel: 650mA Frequency: - Dimming: Triac Applications: - Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封裝: 8-DIP (0.300", 7.62mm)	庫存6,720
IR21531SPBF	Infineon Technologies	IC HALF BRDG DVR SELF-OSC 8SOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10 V ~ 15.6 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 45ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存15,150
BTS7930B	Infineon Technologies	IC NOVALITHIC 1/2 BRIDGE TO263-7 Output Configuration: Half Bridge Applications: DC Motors, General Purpose Interface: Logic Load Type: Inductive Technology: DMOS Rds On (Typ): 18 mOhm LS, 10 mOhm HS Current - Output / Channel: 20A Current - Peak Output: 50A Voltage - Supply: 5.5 V ~ 28 V Voltage - Load: 5.5 V ~ 28 V Operating Temperature: -40°C ~ 150°C (TJ) Features: Latch Function, Slew Rate Controlled, Status Flag Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Mounting Type: Surface Mount Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Supplier Device Package: P-TO-263-7	封裝: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	庫存18,000
ICE2A380P2BKSA1	Infineon Technologies	IC OFFLINE CTRLR SMPS CM TO220 Output Isolation: Isolated Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback Voltage - Start Up: 13.5V Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V Duty Cycle: 72% Frequency - Switching: 100kHz Power (Watts): 111W Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Control Features: Soft Start Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-220-6 Formed Leads Supplier Device Package: PG-TO220-6 Mounting Type: Through Hole	封裝: TO-220-6 Formed Leads	庫存4,160
PVG612SPBF	Infineon Technologies	IC RELAY PHOTOVO 60V 1A 6-SMD Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 500 mOhm Load Current: 1A Voltage - Input: 1.2VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SMD (0.300", 7.62mm) Supplier Device Package: 6-SMT Relay Type: Relay	封裝: 6-SMD (0.300", 7.62mm)	庫存18,576
DZ600N08KHPSA1	Infineon Technologies	DIODE GEN PURP 800V 735A PB501-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 735A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB501-1 Operating Temperature - Junction: 150°C	封裝: -	Request a Quote
IHW30N140R5LXKSA1	Infineon Technologies	IGBT 1400V 80A TO247-44 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A Power - Max: 306 W Switching Energy: -, 140µJ (off) Input Type: Standard Gate Charge: 210 nC Td (on/off) @ 25°C: -/175ns Test Condition: 25V, 30A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-44	封裝: -	庫存669
T3710N04TOFVTXPSA1	Infineon Technologies	SCR MODULE 600V 7000A DO200AD Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 600 V Current - On State (It (AV)) (Max): 3710 A Current - On State (It (RMS)) (Max): 7000 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 70000A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 140°C Mounting Type: Chassis Mount Package / Case: DO-200AD	封裝: -	Request a Quote
FF1400R17IP4B60BOSA1	Infineon Technologies	PP IHM I IGBT Type: Trench Field Stop Configuration: Half Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 1400 A Power - Max: 9550 W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.4kA Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 110000 pF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote
IPB65R420CFDATMA1	Infineon Technologies	MOSFET N-CH 650V 8.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote
CY8C4146AZQ-S423	Infineon Technologies	IC MCU 32BIT 64KB FLASH 64TQFP Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Single-Core Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT Number of I/O: 36 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	封裝: -	庫存7,500
SPW17N80C3FKSA1	Infineon Technologies	MOSFET N-CH 800V 17A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	封裝: -	庫存1,356
IPB80N07S405ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote
CG9199AM	Infineon Technologies	IC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote
CY8C614ABZI-S2F44	Infineon Technologies	IC MCU 32BIT 2MB FLASH 124VFBGA Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 150MHz Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Number of I/O: 100 Program Memory Size: 2MB (2M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 1M x 8 Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 124-VFBGA Supplier Device Package: 124-VFBGA (9x9)	封裝: -	Request a Quote
IDC40D120T6HX1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 75A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 75 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 14 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	封裝: -	Request a Quote
S26HS01GTGABHM030	Infineon Technologies	IC FLASH 1GBIT HYPERBUS 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 1.7ms Access Time: 5.45 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (8x8)	封裝: -	Request a Quote

IRGS4086PBF

Infineon Technologies

IGBT 300V 70A 160W D2PAK

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
Power - Max: 160W
Switching Energy: -
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 36ns/112ns
Test Condition: 196V, 25A, 10 Ohm
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存35,400

IRGP6690D-EPBF

Infineon Technologies

IGBT 600V 90A TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Power - Max: 483W
Switching Energy: 2.4mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 140nC
Td (on/off) @ 25°C: 85ns/222ns
Test Condition: 400V, 75A, 10 Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

封裝: TO-247-3

庫存12,876

IRFH5106TRPBF

Infineon Technologies

MOSFET N-CH 60V 21A 8-PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 114W (Tc)
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6)
Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

庫存61,512

IRLR3714TRRPBF

Infineon Technologies

MOSFET N-CH 20V 36A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存7,280

AUIRFS8405TRL

Infineon Technologies

MOSFET N-CH 40V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 163W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,040

AUIRF4905STRL

Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,608

IRFS7734TRL7PP

Infineon Technologies

MOSFET N-CH 75V 183A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 3.05 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封裝: TO-263-7, D2Pak (6 Leads + Tab)

庫存5,184

PTFB092707FHV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

Transistor Type: -
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: -
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,936

BCR 198T E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 190MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

封裝: SC-75, SOT-416

庫存4,272

BB 659C-02V E7912

Infineon Technologies

DIODE VARIABLE 30V 20MA SC-79

Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio: 15.3
Capacitance Ratio Condition: C1/C28
Voltage - Peak Reverse (Max): 30V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2

封裝: SC-79, SOD-523

庫存4,464

IR3584MTRPBF

Infineon Technologies

IC CONTROLLER DIGITAL QFN

Applications: Controller, Intel VR12, VR12.5
Voltage - Input: 3.3V
Number of Outputs: 2
Voltage - Output: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Supplier Device Package: 40-QFN (5x5)

封裝: 40-VFQFN Exposed Pad

庫存314,460

IRS29831PBF

Infineon Technologies

IC LED DRIVER OFFLINE DIM 8DIP

Type: AC DC Offline Switcher
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): Yes
Number of Outputs: 1
Voltage - Supply (Min): 11.5V
Voltage - Supply (Max): 18V
Voltage - Output: -
Current - Output / Channel: 650mA
Frequency: -
Dimming: Triac
Applications: -
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封裝: 8-DIP (0.300", 7.62mm)

庫存6,720

IR21531SPBF

Infineon Technologies

IC HALF BRDG DVR SELF-OSC 8SOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10 V ~ 15.6 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 45ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存15,150

BTS7930B

Infineon Technologies

IC NOVALITHIC 1/2 BRIDGE TO263-7

Output Configuration: Half Bridge
Applications: DC Motors, General Purpose
Interface: Logic
Load Type: Inductive
Technology: DMOS
Rds On (Typ): 18 mOhm LS, 10 mOhm HS
Current - Output / Channel: 20A
Current - Peak Output: 50A
Voltage - Supply: 5.5 V ~ 28 V
Voltage - Load: 5.5 V ~ 28 V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Latch Function, Slew Rate Controlled, Status Flag
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: P-TO-263-7

封裝: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

庫存18,000

ICE2A380P2BKSA1

Infineon Technologies

IC OFFLINE CTRLR SMPS CM TO220

Output Isolation: Isolated
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback
Voltage - Start Up: 13.5V
Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
Duty Cycle: 72%
Frequency - Switching: 100kHz
Power (Watts): 111W
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-220-6 Formed Leads
Supplier Device Package: PG-TO220-6
Mounting Type: Through Hole

封裝: TO-220-6 Formed Leads

庫存4,160

PVG612SPBF

Infineon Technologies

IC RELAY PHOTOVO 60V 1A 6-SMD

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 500 mOhm
Load Current: 1A
Voltage - Input: 1.2VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SMD (0.300", 7.62mm)
Supplier Device Package: 6-SMT
Relay Type: Relay

封裝: 6-SMD (0.300", 7.62mm)

庫存18,576

DZ600N08KHPSA1

Infineon Technologies

DIODE GEN PURP 800V 735A PB501-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 735A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB501-1
Operating Temperature - Junction: 150°C

封裝: -

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IHW30N140R5LXKSA1

Infineon Technologies

IGBT 1400V 80A TO247-44

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
Power - Max: 306 W
Switching Energy: -, 140µJ (off)
Input Type: Standard
Gate Charge: 210 nC
Td (on/off) @ 25°C: -/175ns
Test Condition: 25V, 30A, 2.2Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-44

封裝: -

庫存669

T3710N04TOFVTXPSA1

Infineon Technologies

SCR MODULE 600V 7000A DO200AD

Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 600 V
Current - On State (It (AV)) (Max): 3710 A
Current - On State (It (RMS)) (Max): 7000 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 70000A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 140°C
Mounting Type: Chassis Mount
Package / Case: DO-200AD

封裝: -

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FF1400R17IP4B60BOSA1

Infineon Technologies

PP IHM I

IGBT Type: Trench Field Stop
Configuration: Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1400 A
Power - Max: 9550 W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.4kA
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110000 pF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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IPB65R420CFDATMA1

Infineon Technologies

MOSFET N-CH 650V 8.7A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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CY8C4146AZQ-S423

Infineon Technologies

IC MCU 32BIT 64KB FLASH 64TQFP

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit Single-Core
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT
Number of I/O: 36
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

封裝: -

庫存7,500

SPW17N80C3FKSA1

Infineon Technologies

MOSFET N-CH 800V 17A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

封裝: -

庫存1,356

IPB80N07S405ATMA1

Infineon Technologies

MOSFET N-CH TO263-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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CG9199AM

Infineon Technologies

IC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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CY8C614ABZI-S2F44

Infineon Technologies

IC MCU 32BIT 2MB FLASH 124VFBGA

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 150MHz
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Number of I/O: 100
Program Memory Size: 2MB (2M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 1M x 8
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Supplier Device Package: 124-VFBGA (9x9)

封裝: -

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IDC40D120T6HX1SA1

Infineon Technologies

DIODE GEN PURP 1.2KV 75A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 75 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C

封裝: -

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S26HS01GTGABHM030

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 1.7ms
Access Time: 5.45 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (8x8)

封裝: -

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