頁 325 - Infineon Technologies 產品

零件編號	製造商	描述	封裝	庫存
IRGP4063PBF	Infineon Technologies	IGBT 600V 96A 330W TO247AC IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 144A Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Power - Max: 330W Switching Energy: 625µJ (on), 1.28mJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 60ns/145ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	封裝: TO-247-3	庫存105,144
IRF6728MTR1PBF	Infineon Technologies	MOSFET N-CH 30V 23A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4110pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 23A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	封裝: DirectFET? Isometric MX	庫存5,008
IRF7521D1PBF	Infineon Technologies	MOSFET N-CH 20V 2.4A MICRO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存6,480
IPF04N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存3,280
IRF4104L	Infineon Technologies	MOSFET N-CH 40V 75A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存18,876
SPP12N50C3HKSA1	Infineon Technologies	MOSFET N-CH 560V 11.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封裝: TO-220-3	庫存3,600
IRLR8113	Infineon Technologies	MOSFET N-CH 30V 94A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存4,752
IRL2203NSTRR	Infineon Technologies	MOSFET N-CH 30V 116A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,536
AUIRLU024Z	Infineon Technologies	MOSFET N CH 55V 16A SOT 223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封裝: TO-251-3 Short Leads, IPak, TO-251AA	庫存6,336
IPD50N04S410ATMA1	Infineon Technologies	MOSFET N-CH 40V 50A TO252-3-313 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存6,832
AUIRF7316Q	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	封裝: 8-SOIC	庫存67,488
BC846SH6327XTSA1	Infineon Technologies	TRANS 2NPN 65V 0.1A SOT363 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封裝: 6-VSSOP, SC-88, SOT-363	庫存49,290
BAT1705WE6327HTSA1	Infineon Technologies	DIODE SCHOTTKY RF CC SOT-323 Diode Type: Schottky - 1 Pair Common Cathode Voltage - Peak Reverse (Max): 4V Current - Max: 130mA Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15 Ohm @ 5mA, 10kHz Power Dissipation (Max): 150mW Operating Temperature: 150°C (TJ) Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存7,056
IRD3CH101DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存5,632
TLE4274DV50ITJKKNTMA1	Infineon Technologies	IC REG LINEAR 400MA TO252-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 250mA Current - Output: 400mA Current - Quiescent (Iq): - Current - Supply (Max): 220µA ~ 30mA PSRR: 60dB (100Hz) Control Features: - Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存4,160
TLE7244SLXUMA2	Infineon Technologies	IC DRIVER SPI 8CH LS 24SSOP Switch Type: Relay, Solenoid Driver Number of Outputs: 8 Ratio - Input:Output: 1:2 Output Configuration: Low Side Output Type: N-Channel Interface: SPI Voltage - Load: 4.5 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Current - Output (Max): 290mA Rds On (Typ): 800 mOhm Input Type: - Features: - Fault Protection: Open Load Detect, Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 24-SSOP (0.154", 3.90mm Width) Supplier Device Package: PG-SSOP-24-7	封裝: 24-SSOP (0.154", 3.90mm Width)	庫存7,296
IR2104S	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 8-SOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存214,548
V23826-K305-C373	Infineon Technologies	TXRX MULT-MODE 850NM 1.3GBIT Data Rate: 1.3Gbps Wavelength: 850nm Applications: Ethernet Voltage - Supply: 3.1 V ~ 3.5 V Connector Type: SC Mounting Type: Through Hole	封裝: -	庫存7,074
TCA505BCHIPX1SA1	Infineon Technologies	IC SWITCH PROXIMITY INDCT CHIP Type: Proximity Only Proximity Detection: Yes Number of Inputs: 1 LED Driver Channels: - Interface: - Resolution: - Voltage - Supply: 3.1 V ~ 40 V Current - Supply: 550µA Operating Temperature: -40°C ~ 110°C Package / Case: - Supplier Device Package: -	封裝: -	庫存3,636
40060425	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote
S25FL064LABMFV011	Infineon Technologies	IC FLASH 64MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: -	庫存6,675
CYAT827AZS64-2200A	Infineon Technologies	PSOC BASED - TRUETOUCH Touchscreen: 2 Wire Capacitive Resolution (Bits): - Interface: I2C Voltage Reference: - Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Current - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: -	Request a Quote
TLE9879QXW40XUMA2	Infineon Technologies	IC SOC MOTOR DRIVER 48VQFN Applications: - Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (128kB) Controller Series: TLE987x RAM Size: 6K x 8 Interface: DMA, LIN, SPI, SSC, UART Number of I/O: 10 Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-29	封裝: -	庫存7,500
S27KL0643DPBHB023	Infineon Technologies	IC PSRAM 64MBIT SPI/OCTAL 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 36ns Access Time: 36 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封裝: -	Request a Quote
IPD088N06N3GATMA1	Infineon Technologies	MOSFET N-CH 60V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-311 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	Request a Quote
PSB2170HV2-1	Infineon Technologies	ACOUSTIC ECHO CANCELLER ACE Function: - Interface: - Number of Circuits: - Voltage - Supply: - Current - Supply: - Power (Watts): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote
IKU06N60R	Infineon Technologies	IGBT TRENCH 600V 12A TO251-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 12 A Current - Collector Pulsed (Icm): 18 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Power - Max: 100 W Switching Energy: 330µJ Input Type: Standard Gate Charge: 48 nC Td (on/off) @ 25°C: 12ns/127ns Test Condition: 400V, 6A, 23Ohm, 15V Reverse Recovery Time (trr): 68 ns Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA Supplier Device Package: PG-TO251-3	封裝: -	Request a Quote
FP50R07N2E4B11BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2B-411 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 70 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2B	封裝: -	Request a Quote

IRGP4063PBF

Infineon Technologies

IGBT 600V 96A 330W TO247AC

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 96A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Power - Max: 330W
Switching Energy: 625µJ (on), 1.28mJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 60ns/145ns
Test Condition: 400V, 48A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

封裝: TO-247-3

庫存105,144

IRF6728MTR1PBF

Infineon Technologies

MOSFET N-CH 30V 23A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4110pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 23A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MX
Package / Case: DirectFET? Isometric MX

封裝: DirectFET? Isometric MX

庫存5,008

IRF7521D1PBF

Infineon Technologies

MOSFET N-CH 20V 2.4A MICRO8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Vgs (Max): ±12V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Micro8?
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存6,480

IPF04N03LA G

Infineon Technologies

MOSFET N-CH 25V 50A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: P-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存3,280

IRF4104L

Infineon Technologies

MOSFET N-CH 40V 75A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存18,876

SPP12N50C3HKSA1

Infineon Technologies

MOSFET N-CH 560V 11.6A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封裝: TO-220-3

庫存3,600

IRLR8113

Infineon Technologies

MOSFET N-CH 30V 94A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存4,752

IRL2203NSTRR

Infineon Technologies

MOSFET N-CH 30V 116A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,536

AUIRLU024Z

Infineon Technologies

MOSFET N CH 55V 16A SOT 223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封裝: TO-251-3 Short Leads, IPak, TO-251AA

庫存6,336

IPD50N04S410ATMA1

Infineon Technologies

MOSFET N-CH 40V 50A TO252-3-313

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存6,832

AUIRF7316Q

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

封裝: 8-SOIC

庫存67,488

BC846SH6327XTSA1

Infineon Technologies

TRANS 2NPN 65V 0.1A SOT363

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

庫存49,290

BAT1705WE6327HTSA1

Infineon Technologies

DIODE SCHOTTKY RF CC SOT-323

Diode Type: Schottky - 1 Pair Common Cathode
Voltage - Peak Reverse (Max): 4V
Current - Max: 130mA
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15 Ohm @ 5mA, 10kHz
Power Dissipation (Max): 150mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存7,056

IRD3CH101DF6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存5,632

TLE4274DV50ITJKKNTMA1

Infineon Technologies

IC REG LINEAR 400MA TO252-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 250mA
Current - Output: 400mA
Current - Quiescent (Iq): -
Current - Supply (Max): 220µA ~ 30mA
PSRR: 60dB (100Hz)
Control Features: -
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存4,160

TLE7244SLXUMA2

Infineon Technologies

IC DRIVER SPI 8CH LS 24SSOP

Switch Type: Relay, Solenoid Driver
Number of Outputs: 8
Ratio - Input:Output: 1:2
Output Configuration: Low Side
Output Type: N-Channel
Interface: SPI
Voltage - Load: 4.5 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Current - Output (Max): 290mA
Rds On (Typ): 800 mOhm
Input Type: -
Features: -
Fault Protection: Open Load Detect, Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Supplier Device Package: PG-SSOP-24-7

封裝: 24-SSOP (0.154", 3.90mm Width)

庫存7,296

IR2104S

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8-SOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存214,548

V23826-K305-C373

Infineon Technologies

TXRX MULT-MODE 850NM 1.3GBIT

Data Rate: 1.3Gbps
Wavelength: 850nm
Applications: Ethernet
Voltage - Supply: 3.1 V ~ 3.5 V
Connector Type: SC
Mounting Type: Through Hole

封裝: -

庫存7,074

TCA505BCHIPX1SA1

Infineon Technologies

IC SWITCH PROXIMITY INDCT CHIP

Type: Proximity Only
Proximity Detection: Yes
Number of Inputs: 1
LED Driver Channels: -
Interface: -
Resolution: -
Voltage - Supply: 3.1 V ~ 40 V
Current - Supply: 550µA
Operating Temperature: -40°C ~ 110°C
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,636

40060425

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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S25FL064LABMFV011

Infineon Technologies

IC FLASH 64MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: -

庫存6,675

CYAT827AZS64-2200A

Infineon Technologies

PSOC BASED - TRUETOUCH

Touchscreen: 2 Wire Capacitive
Resolution (Bits): -
Interface: I2C
Voltage Reference: -
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Current - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: -

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TLE9879QXW40XUMA2

Infineon Technologies

IC SOC MOTOR DRIVER 48VQFN

Applications: -
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Controller Series: TLE987x
RAM Size: 6K x 8
Interface: DMA, LIN, SPI, SSC, UART
Number of I/O: 10
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-29

封裝: -

庫存7,500

S27KL0643DPBHB023

Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 36ns
Access Time: 36 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封裝: -

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IPD088N06N3GATMA1

Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-311
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

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PSB2170HV2-1

Infineon Technologies

ACOUSTIC ECHO CANCELLER ACE

Function: -
Interface: -
Number of Circuits: -
Voltage - Supply: -
Current - Supply: -
Power (Watts): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

IKU06N60R

Infineon Technologies

IGBT TRENCH 600V 12A TO251-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Current - Collector Pulsed (Icm): 18 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Power - Max: 100 W
Switching Energy: 330µJ
Input Type: Standard
Gate Charge: 48 nC
Td (on/off) @ 25°C: 12ns/127ns
Test Condition: 400V, 6A, 23Ohm, 15V
Reverse Recovery Time (trr): 68 ns
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package: PG-TO251-3

封裝: -

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FP50R07N2E4B11BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2B

封裝: -

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