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Infineon Technologies 產品

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IPU20N03L G
Infineon Technologies

MOSFET N-CH 30V 30A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: P-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存3,440
hot IRF6678TR1
Infineon Technologies

MOSFET N-CH 30V 30A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
封裝: DirectFET? Isometric MX
庫存204,444
IRF3709ZSTRR
Infineon Technologies

MOSFET N-CH 30V 87A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,344
hot IRLZ34NSTRR
Infineon Technologies

MOSFET N-CH 55V 30A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存60,012
IRFHM3911TRPBF
Infineon Technologies

MOSFET N-CH 100V 10A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 6.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (3x3)
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存4,352
hot IRL2505PBF
Infineon Technologies

MOSFET N-CH 55V 104A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存15,504
hot IRU3037ACF
Infineon Technologies

IC REG CTRLR BUCK/BOOST 8TSSOP

  • Output Type: Transistor Driver
  • Function: Step-Up, Step-Down
  • Output Configuration: Positive
  • Topology: Buck, Boost
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V
  • Frequency - Switching: 400kHz
  • Duty Cycle (Max): 90%
  • Synchronous Rectifier: Yes
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Enable, Soft Start
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存75,588
hot IRS2540SPBF
Infineon Technologies

IC LED DRIVER CTRLR DIM 8SOIC

  • Type: DC DC Controller
  • Topology: Step-Down (Buck)
  • Internal Switch(s): No
  • Number of Outputs: 1
  • Voltage - Supply (Min): 9V
  • Voltage - Supply (Max): 15.6V
  • Voltage - Output: -
  • Current - Output / Channel: -
  • Frequency: 500kHz
  • Dimming: PWM
  • Applications: -
  • Operating Temperature: -25°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存54,408
PXB4220E-V33
Infineon Technologies

IC CHIPSET 8 E1/T1 LINE 256-BGA

  • Applications: -
  • Interface: -
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
  • Mounting Type: Surface Mount
封裝: 256-BGA
庫存6,304
C167CSL40MCAKXQLA2
Infineon Technologies

IC MCU 16BIT ROMLESS 144MQFP

  • Core Processor: C166
  • Core Size: 16-Bit
  • Speed: 40MHz
  • Connectivity: CAN, EBI/EMI, SPI, UART/USART
  • Peripherals: POR, PWM, WDT
  • Number of I/O: 111
  • Program Memory Size: -
  • Program Memory Type: ROMless
  • EEPROM Size: -
  • RAM Size: 11K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 24x10b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 144-BQFP
  • Supplier Device Package: PG-MQFP-144
封裝: 144-BQFP
庫存5,360
TLV493DA1B6HTSA2
Infineon Technologies

3D MAGNETIC SENSOR

  • For Measuring: Linear, Rotary Position
  • Technology: Hall Effect
  • Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
  • Linear Range: -
  • Output: I2C
  • Output Signal: -
  • Actuator Type: External Magnet Not Included
  • Linearity: -
  • Resistance: -
  • Resistance Tolerance: -
  • Voltage - Supply: 2.7 V ~ 3.5 V
  • Mounting Type: Surface Mount
  • Termination Style: SMD (SMT) Tab
  • Operating Temperature: -40°C ~ 125°C
封裝: -
庫存80,736
BGS14PN10E6327XTSA1
Infineon Technologies

CMOS SWITCH

  • Frequency - Lower: 500MHz
  • Frequency - Upper: 6GHz
  • Isolation @ Frequency: 18dB @ 6GHz (typ)
  • Insertion Loss @ Frequency: 1.2dB @ 6GHz
  • IIP3: 73dBm (typ)
  • Topology: -
  • Circuit: SP4T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -40°C ~ 85°C
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • RF Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,038
hot PVA3324N
Infineon Technologies

IC RELAY PHOTOVO 300V 150MA 8DIP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 24 Ohm
  • Load Current: 150mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 300 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
  • Supplier Device Package: 8-DIP Modified
  • Relay Type: Relay
封裝: 8-DIP (0.300", 7.62mm), 4 Leads
庫存12,900
CY8C4145PVI-PS421
Infineon Technologies

IC MCU 32BIT 32KB FLASH 28SSOP

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit Single-Core
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 20
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 28-SSOP
封裝: -
庫存3,465
S6J32MELSMSC20000
Infineon Technologies

TRAVEO-55NM

  • Core Processor: ARM® Cortex®-R5F
  • Core Size: 32-Bit
  • Speed: 240MHz
  • Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
  • Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 128
  • Program Memory Size: 4.171875MB (4.171875M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 3M x 8
  • Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
  • Data Converters: A/D 50x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 216-LQFP Exposed Pad
  • Supplier Device Package: 216-TEQFP (24x24)
封裝: -
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XDPE18284A0000XUMA1
Infineon Technologies

IFX PRIMARION CNTRLLER

  • Output Type: -
  • Function: -
  • Output Configuration: -
  • Topology: -
  • Number of Outputs: -
  • Output Phases: -
  • Voltage - Supply (Vcc/Vdd): -
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: -
  • Clock Sync: -
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
IRF7494TR
Infineon Technologies

MOSFET N-CH 150V 5.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: -
Request a Quote
S25HL01GTFABHM030
Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (8x8)
封裝: -
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CY7C1061BV33-8ZXC
Infineon Technologies

IC SRAM 16MB ASYNC 54-TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 8ns
  • Access Time: 8 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封裝: -
Request a Quote
CYUSB3016-BZXCT
Infineon Technologies

USB SuperSpeed Peripherals

  • Applications: SuperSpeed USB Peripheral Controller
  • Core Processor: ARM926EJ-S
  • Program Memory Type: External Program Memory
  • Controller Series: CYUSB
  • RAM Size: 512K x 8
  • Interface: I2C, SPI, UART, USB
  • Number of I/O: 7
  • Voltage - Supply: 1.15V ~ 1.25V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 121-TFBGA
  • Supplier Device Package: 121-FBGA (10x10)
封裝: -
Request a Quote
TLE6263GNUMA1
Infineon Technologies

IC TRANSCEIVER HALF 1/1 DSO-28

  • Type: Transceiver
  • Protocol: CANbus
  • Number of Drivers/Receivers: 1/1
  • Duplex: Half
  • Receiver Hysteresis: 200 mV
  • Data Rate: 125kBaud
  • Voltage - Supply: 4.8V ~ 5.1V, 4.9V ~ 5.2V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: PG-DSO-28-27
封裝: -
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DD350N16KHPSA1
Infineon Technologies

DIODE MODULE GP 1.6KV 350A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 350A
  • Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封裝: -
庫存12
IPP319N20NM6AKSA1
Infineon Technologies

IGBT TRENCH 100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
IPP60R145CFD7XKSA1
Infineon Technologies

MOSFET N CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封裝: -
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IPT039N15N5XTMA1
Infineon Technologies

TRENCH >=100V PG-HSOF-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 257µA
  • Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 319W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8
  • Package / Case: 8-PowerSFN
封裝: -
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IPT60R090CFD7XTMA1
Infineon Technologies

MOSFET N-CH 600V 28A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 470µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 9.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
封裝: -
庫存5,880
SIDC23D60E6X1SA1
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
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IPP013N04NF2SAKMA1
Infineon Technologies

TRENCH PG-TO220-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存3,000