Infineon Technologies 產品

IRGP4063D-EPBF

Infineon Technologies

IGBT 600V 96A 330W TO247AD

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 96A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
• Power - Max: 330W
• Switching Energy: 625µJ (on), 1.28mJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 60ns/145ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 115ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封裝: TO-247-3

AUIRF3808S

Infineon Technologies

MOSFET N-CH 75V 106A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5310pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3707STRRPBF

Infineon Technologies

MOSFET N-CH 30V 62A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLR3714TRPBF

Infineon Technologies

MOSFET N-CH 20V 36A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 47W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7470TR

Infineon Technologies

MOSFET N-CH 40V 10A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 20V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

IPT043N15N5ATMA1

Infineon Technologies

MV POWER MOS

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封裝: -

IRFR2407TRLPBF

Infineon Technologies

MOSFET N-CH 75V 42A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

BCR 185F E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: PG-TSLP-3

封裝: SC-101, SOT-883

BAR6402ELE6327XTMA1

Infineon Technologies

DIODE RF SGL 150V 100MA TSLP2-19

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 150V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (Max): 250mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SOD-882
• Supplier Device Package: TSLP-2-19

封裝: SOD-882

IDW30G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 30A TO247-3

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 220µA @ 650V
• Capacitance @ Vr, F: 860pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-247-3

IDW10G120C5BFKSA1

Infineon Technologies

DIODE SCHOTTKY 1.2KV 10A TO247-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 17A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: TO-247-3

TDA4862G GEG

Infineon Technologies

IC PFC CONTROLLER DCM 8DSO

• Mode: Discontinuous Conduction (DCM)
• Frequency - Switching: -
• Current - Startup: -
• Voltage - Supply: 11 V ~ 19 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

C165L25MHAFXQMA1

Infineon Technologies

IC MCU 16BIT ROMLESS 100MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: EBI/EMI, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 77
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 2K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-BQFP
• Supplier Device Package: 100-MQFP (14x20)

封裝: 100-BQFP

V23815-U1306-M130

Infineon Technologies

PARALLEL OPTICAL LINK 1.6GBIT

• Data Rate: 1.6Gbps
• Voltage - Supply: 3.3V
• Power - Minimum Receivable: -
• Current - Supply: 450mA
• Applications: -

封裝: -

TLE5012BE5000FUMA1

Infineon Technologies

SENSOR MAGNETIC ANGLE 5V 8DSO

• For Measuring: Angle
• Technology: Magnetoresistive
• Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
• Linear Range: -
• Output: SENT, SPI
• Output Signal: Cosine, Sine
• Actuator Type: External Magnet Not Included
• Linearity: -
• Resistance: -
• Resistance Tolerance: -
• Voltage - Supply: 3 V ~ 5.5 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Operating Temperature: -40°C ~ 150°C

封裝: -

TLE4986CXTSM47HAMA1

Infineon Technologies

SPEED SENSORS 3SSO

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

40060385

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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BCR430UXTSA2

Infineon Technologies

IC LED DRV LIN PWM 100MA SOT23-6

• Type: Linear
• Topology: Constant Current
• Internal Switch(s): No
• Number of Outputs: 1
• Voltage - Supply (Min): 6V
• Voltage - Supply (Max): 42V
• Voltage - Output: 42V
• Current - Output / Channel: 100mA
• Frequency: -
• Dimming: PWM
• Applications: LED Lighting
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: PG-SOT23-6-1

封裝: -

D400N20BXPSA1

Infineon Technologies

DIODE GP 1.2KV 400A DSW41-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 400A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: BG-DSW41-1
• Supplier Device Package: BG-DSW41-1
• Operating Temperature - Junction: 180°C (Max)

封裝: -

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FF200R12KT3HOSA1

Infineon Technologies

IGBT MODULE 1200V 1050W

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): -
• Power - Max: 1050 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -

S28HS01GTGZBHB033

Infineon Technologies

IC FLASH 1GBIT SPI/OCTAL 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 5.45 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

封裝: -

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PEB2060NV4-5G

Infineon Technologies

SICOFI CODEC FILTER

• Filter Type: -
• Frequency - Cutoff or Center: -
• Number of Filters: -
• Filter Order: -
• Voltage - Supply: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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CYAT81682-100AA77

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封裝: -

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CY8C6244LQI-S4D62

Infineon Technologies

IC MCU 32BIT 256KB FLASH 68QFN

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: CANbus, FIFO, I2C, LINbus, QSPI, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 52
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 68-VFQFN Exposed Pad
• Supplier Device Package: 68-QFN (8x8)

封裝: -

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SIGC42T60NCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 43ns/130ns
• Test Condition: 300V, 50A, 3.3Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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S27KS0642GABHA020

Infineon Technologies

IC PSRAM 64MBIT HYPERBUS 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

封裝: -

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2EDN7533FXTMA1

Infineon Technologies

DRIVER IC PG-DSO-8

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5V ~ 20V
• Logic Voltage - VIL, VIH: 1.4V, 1.9V
• Current - Peak Output (Source, Sink): 5A, 5A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 8.6ns, 6ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封裝: -

CY8C4127LQA-S443T

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
• Number of I/O: 34
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封裝: -

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