頁 261 - Infineon Technologies 產品

零件編號	製造商	描述	封裝	庫存
IPB100N06S2L05ATMA2	Infineon Technologies	MOSFET N-CH 55V 100A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,704
IPA80R460CEXKSA2	Infineon Technologies	MOSFET N-CH 800V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 680µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 7.1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存4,512
BSC026N04LSATMA1	Infineon Technologies	MOSFET N-CH 40V 23A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封裝: 8-PowerTDFN	庫存6,784
IPS70R950CEAKMA1	Infineon Technologies	MOSFET NCH 700V 7.4A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Stub Leads, IPak	封裝: TO-251-3 Stub Leads, IPak	庫存14,976
BSZ025N04LSATMA1	Infineon Technologies	MOSFET N-CH 40V 22A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	封裝: 8-PowerTDFN	庫存42,426
IRF2804PBF	Infineon Technologies	MOSFET N-CH 40V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封裝: TO-220-3	庫存9,696
PTFA191001EV4XWSA1	Infineon Technologies	IC FET RF LDMOS 100W H-36248-2 Transistor Type: LDMOS Frequency: 1.96GHz Gain: 17dB Voltage - Test: 30V Current Rating: 10µA Noise Figure: - Current - Test: 900mA Power - Output: 44dBm Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-36248-2	封裝: 2-Flatpack, Fin Leads	庫存6,048
BCP5116H6327XTSA1	Infineon Technologies	TRANS PNP 45V 1A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	封裝: TO-261-4, TO-261AA	庫存3,296
BFS 360L6 E6327	Infineon Technologies	TRANSISTOR NPN 6V 35MA TSLP-6 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz Gain: 10dB ~ 14.5dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: PG-TSLP-6	封裝: 6-XFDFN	庫存6,640
BBY 53-03LRH E6327	Infineon Technologies	DIODE TUNING 6V 20MA TSLP-3 Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz Capacitance Ratio: 2.6 Capacitance Ratio Condition: C1/C3 Voltage - Peak Reverse (Max): 6V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	封裝: SC-101, SOT-883	庫存5,440
IR35211MTRPBF	Infineon Technologies	IC CTRLR PWM MULTIPHASE Applications: Multiphase Controller Current - Supply: 105mA Voltage - Supply: 2.9 V ~ 3.63 V Operating Temperature: 0°C ~ 85°C Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	封裝: 40-VFQFN Exposed Pad	庫存6,112
IPS512G	Infineon Technologies	IC MOSFET HS PWR SW 5A 16-SOIC Switch Type: General Purpose Number of Outputs: 2 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 5.5 V ~ 35 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Rds On (Typ): 130 mOhm Input Type: Non-Inverting Features: Auto Restart Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.154", 3.90mm Width)	庫存7,472
ITS428L2	Infineon Technologies	IC SWITCH HISIDE SMART TO252-5 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 4.75 V ~ 43 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 5.8A Rds On (Typ): 50 mOhm Input Type: Non-Inverting Features: Status Flag Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Operating Temperature: -30°C ~ 85°C (TA) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5	封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD	庫存52,200
IRS26320JTRPBF	Infineon Technologies	IC GATE DRVR HALF-BRIDGE 44PLCC Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 12 V ~ 20 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): - Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 44-PLCC	封裝: -	庫存4,288
XMC4400F100F512ABXUMA1	Infineon Technologies	IC MCU 32BIT 512KB FLASH 100LQFP Core Processor: ARM? Cortex?-M4 Core Size: 32-Bit Speed: 120MHz Connectivity: CAN, Ethernet, I2C, LIN, SPI, UART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Number of I/O: 55 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 80K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 24x12b, D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-25	封裝: 100-LQFP Exposed Pad	庫存5,808
TLE9831QVXUMA2	Infineon Technologies	IC MOTOR DRIVER 48VQFN Applications: Automotive Core Processor: XC800 Program Memory Type: FLASH (36 kB) Controller Series: - RAM Size: 3.25K x 8 Interface: LIN, SSI, UART Number of I/O: 5 Voltage - Supply: 3 V ~ 27 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-31	封裝: 48-VFQFN Exposed Pad	庫存4,496
TLE49645MXTSA1	Infineon Technologies	MAGNETIC SWITCH UNIPOLAR SOT23-3 Function: Unipolar Switch Technology: Hall Effect Polarization: South Pole Sensing Range: 10.4mT Trip, 2.7mT Release Test Condition: 25°C Voltage - Supply: 3 V ~ 32 V Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Output Type: Open Drain Features: Temperature Compensated Operating Temperature: -40°C ~ 170°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3-15	封裝: TO-236-3, SC-59, SOT-23-3	庫存3,294
IPD60R520C6BTMA1	Infineon Technologies	MOSFET N-CH 600V 8.1A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	Request a Quote
CY8C4146AZA-S265	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Number of I/O: 54 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16, 20x10/12b SAR Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	封裝: -	Request a Quote
CY8C4145PVI-PS431	Infineon Technologies	IC MCU 32BIT 32KB FLASH 28SSOP Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Single-Core Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 20 Program Memory Size: 32KB (32K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SSOP (0.209", 5.30mm Width) Supplier Device Package: 28-SSOP	封裝: -	Request a Quote
S29PL032J70BFI070	Infineon Technologies	IC FLASH 32MBIT PARALLEL 48VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (8.15x6.15)	封裝: -	Request a Quote
BBY5806WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz Capacitance Ratio: 3.5 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10 V Diode Type: 1 Pair Common Anode Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: -	Request a Quote
TT240N28KOFHPSA1	Infineon Technologies	SCR MODULE 2.8KV 700A MODULE Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 2.8 kV Current - On State (It (AV)) (Max): 446 A Current - On State (It (RMS)) (Max): 700 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module	封裝: -	Request a Quote
F505CALMCAXP	Infineon Technologies	IC MCU 8BIT ROMLESS 44MQFP Core Processor: C500 Core Size: 8-Bit Speed: 20MHz Connectivity: CANbus, EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 34 Program Memory Size: - Program Memory Type: ROMless EEPROM Size: - RAM Size: 1.25K x 8 Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Data Converters: A/D 8x10b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-QFP Supplier Device Package: PG-MQFP-44-2	封裝: -	Request a Quote
CY8C4149LDAS553XQLA1	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 384KB (384K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount, Wettable Flank Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	封裝: -	Request a Quote
CY9BF166NPMC-G-MNE2	Infineon Technologies	IC MCU 32BIT 544KB FLASH 100LQFP Core Processor: ARM® Cortex®-M4F Core Size: 32-Bit Single-Core Speed: 160MHz Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 80 Program Memory Size: 544KB (544K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 64K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 16x12b; D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	封裝: -	庫存2,700
CY9AF144LAQN-G-AVE2	Infineon Technologies	MULTI-MARKET MCUS Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Number of I/O: 51 Program Memory Size: 288KB (288K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 12x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-VFQFN Exposed Pad Supplier Device Package: 64-QFN (9x9)	封裝: -	Request a Quote
CY8C4245PVS-482ZT	Infineon Technologies	IC MCU 32BIT 32KB FLASH 28SSOP Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 24 Program Memory Size: 32KB (32K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 8x12b SAR; D/A 2x7/8b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 28-SSOP (0.209", 5.30mm Width) Supplier Device Package: 28-SSOP	封裝: -	Request a Quote

IPB100N06S2L05ATMA2

Infineon Technologies

MOSFET N-CH 55V 100A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,704

IPA80R460CEXKSA2

Infineon Technologies

MOSFET N-CH 800V TO-220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 460 mOhm @ 7.1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存4,512

BSC026N04LSATMA1

Infineon Technologies

MOSFET N-CH 40V 23A 8TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

庫存6,784

IPS70R950CEAKMA1

Infineon Technologies

MOSFET NCH 700V 7.4A TO251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251
Package / Case: TO-251-3 Stub Leads, IPak

封裝: TO-251-3 Stub Leads, IPak

庫存14,976

BSZ025N04LSATMA1

Infineon Technologies

MOSFET N-CH 40V 22A TSDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

庫存42,426

IRF2804PBF

Infineon Technologies

MOSFET N-CH 40V 75A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存9,696

PTFA191001EV4XWSA1

Infineon Technologies

IC FET RF LDMOS 100W H-36248-2

Transistor Type: LDMOS
Frequency: 1.96GHz
Gain: 17dB
Voltage - Test: 30V
Current Rating: 10µA
Noise Figure: -
Current - Test: 900mA
Power - Output: 44dBm
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads
Supplier Device Package: H-36248-2

封裝: 2-Flatpack, Fin Leads

庫存6,048

BCP5116H6327XTSA1

Infineon Technologies

TRANS PNP 45V 1A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

封裝: TO-261-4, TO-261AA

庫存3,296

BFS 360L6 E6327

Infineon Technologies

TRANSISTOR NPN 6V 35MA TSLP-6

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
Gain: 10dB ~ 14.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: PG-TSLP-6

封裝: 6-XFDFN

庫存6,640

BBY 53-03LRH E6327

Infineon Technologies

DIODE TUNING 6V 20MA TSLP-3

Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio: 2.6
Capacitance Ratio Condition: C1/C3
Voltage - Peak Reverse (Max): 6V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

封裝: SC-101, SOT-883

庫存5,440

IR35211MTRPBF

Infineon Technologies

IC CTRLR PWM MULTIPHASE

Applications: Multiphase Controller
Current - Supply: 105mA
Voltage - Supply: 2.9 V ~ 3.63 V
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

封裝: 40-VFQFN Exposed Pad

庫存6,112

IPS512G

Infineon Technologies

IC MOSFET HS PWR SW 5A 16-SOIC

Switch Type: General Purpose
Number of Outputs: 2
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 5.5 V ~ 35 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Rds On (Typ): 130 mOhm
Input Type: Non-Inverting
Features: Auto Restart
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

庫存7,472

ITS428L2

Infineon Technologies

IC SWITCH HISIDE SMART TO252-5

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 4.75 V ~ 43 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Rds On (Typ): 50 mOhm
Input Type: Non-Inverting
Features: Status Flag
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Operating Temperature: -30°C ~ 85°C (TA)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5

封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD

庫存52,200

IRS26320JTRPBF

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 44PLCC

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 12 V ~ 20 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): -
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 44-PLCC

封裝: -

庫存4,288

XMC4400F100F512ABXUMA1

Infineon Technologies

IC MCU 32BIT 512KB FLASH 100LQFP

Core Processor: ARM? Cortex?-M4
Core Size: 32-Bit
Speed: 120MHz
Connectivity: CAN, Ethernet, I2C, LIN, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Number of I/O: 55
Program Memory Size: 512KB (512K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 80K x 8
Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
Data Converters: A/D 24x12b, D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-100-25

封裝: 100-LQFP Exposed Pad

庫存5,808

TLE9831QVXUMA2

Infineon Technologies

IC MOTOR DRIVER 48VQFN

Applications: Automotive
Core Processor: XC800
Program Memory Type: FLASH (36 kB)
Controller Series: -
RAM Size: 3.25K x 8
Interface: LIN, SSI, UART
Number of I/O: 5
Voltage - Supply: 3 V ~ 27 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-31

封裝: 48-VFQFN Exposed Pad

庫存4,496

TLE49645MXTSA1

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SOT23-3

Function: Unipolar Switch
Technology: Hall Effect
Polarization: South Pole
Sensing Range: 10.4mT Trip, 2.7mT Release
Test Condition: 25°C
Voltage - Supply: 3 V ~ 32 V
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Output Type: Open Drain
Features: Temperature Compensated
Operating Temperature: -40°C ~ 170°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3-15

封裝: TO-236-3, SC-59, SOT-23-3

庫存3,294

IPD60R520C6BTMA1

Infineon Technologies

MOSFET N-CH 600V 8.1A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

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CY8C4146AZA-S265

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Number of I/O: 54
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16, 20x10/12b SAR
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

封裝: -

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CY8C4145PVI-PS431

Infineon Technologies

IC MCU 32BIT 32KB FLASH 28SSOP

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit Single-Core
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 20
Program Memory Size: 32KB (32K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 4K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Supplier Device Package: 28-SSOP

封裝: -

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S29PL032J70BFI070

Infineon Technologies

IC FLASH 32MBIT PARALLEL 48VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (8.15x6.15)

封裝: -

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BBY5806WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio: 3.5
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10 V
Diode Type: 1 Pair Common Anode
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: -

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TT240N28KOFHPSA1

Infineon Technologies

SCR MODULE 2.8KV 700A MODULE

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 2.8 kV
Current - On State (It (AV)) (Max): 446 A
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module

封裝: -

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F505CALMCAXP

Infineon Technologies

IC MCU 8BIT ROMLESS 44MQFP

Core Processor: C500
Core Size: 8-Bit
Speed: 20MHz
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 34
Program Memory Size: -
Program Memory Type: ROMless
EEPROM Size: -
RAM Size: 1.25K x 8
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Data Converters: A/D 8x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-QFP
Supplier Device Package: PG-MQFP-44-2

封裝: -

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CY8C4149LDAS553XQLA1

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Number of I/O: 40
Program Memory Size: 384KB (384K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

封裝: -

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CY9BF166NPMC-G-MNE2

Infineon Technologies

IC MCU 32BIT 544KB FLASH 100LQFP

Core Processor: ARM® Cortex®-M4F
Core Size: 32-Bit Single-Core
Speed: 160MHz
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 80
Program Memory Size: 544KB (544K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 64K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 16x12b; D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

封裝: -

庫存2,700

CY9AF144LAQN-G-AVE2

Infineon Technologies

MULTI-MARKET MCUS

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Number of I/O: 51
Program Memory Size: 288KB (288K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 12x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Supplier Device Package: 64-QFN (9x9)

封裝: -

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CY8C4245PVS-482ZT

Infineon Technologies

IC MCU 32BIT 32KB FLASH 28SSOP

Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 24
Program Memory Size: 32KB (32K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 4K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 8x12b SAR; D/A 2x7/8b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Supplier Device Package: 28-SSOP

封裝: -

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