Infineon Technologies 產品

IRFU12N25DPBF

Infineon Technologies

MOSFET N-CH 250V 14A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 144W (Tc)
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封裝: TO-251-3 Short Leads, IPak, TO-251AA

IRFZ34E

Infineon Technologies

MOSFET N-CH 60V 28A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封裝: TO-220-3

SPD09P06PL G

Infineon Technologies

MOSFET P-CH 60V 9.7A TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF8910GTRPBF

Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 10A
• Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

BCR 189L3 E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: PG-TSLP-3

封裝: SC-101, SOT-883

BCR 151T E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 100k
• Resistor - Emitter Base (R2) (Ohms): 100k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 120MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

封裝: SC-75, SOT-416

BAV 99T E6327

Infineon Technologies

DIODE ARRAY GP 80V 200MA SC75

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 150nA @ 70V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

封裝: SC-75, SOT-416

AUIPS6011R

Infineon Technologies

IC SW IPS 1CH HIGH SIDE DPAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 36V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 5.6A
• Rds On (Typ): 11 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: D-Pak

封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD

TLE4729G

Infineon Technologies

IC MOTOR DRIVER PAR 24DSO

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Bipolar
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 800mA
• Voltage - Supply: 5 V ~ 16 V
• Voltage - Load: 5 V ~ 16 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-24

封裝: 24-SOIC (0.295", 7.50mm Width)

AUIRS2332J

Infineon Technologies

IC DRVR BRIDGE 3-PHASE 44PLCC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

封裝: 44-LCC (J-Lead), 32 Leads

TUA 6039

Infineon Technologies

IC TUNER MOPLL STAT 48-VQFN

• Type: Tuner
• Applications: NTSC, PAL
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-4

封裝: 48-VFQFN Exposed Pad

TLE8458GXUMA2

Infineon Technologies

IC LDO VREG/LIN TXRX 8DSO

• Type: Transceiver
• Protocol: LIN
• Number of Drivers/Receivers: 1/1
• Duplex: Full
• Receiver Hysteresis: -
• Data Rate: 20kbps
• Voltage - Supply: 7 V ~ 27 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

SAF-TC1100-L150EB BB

Infineon Technologies

IC MCU 32BIT ROMLESS 208LBGA

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 150MHz
• Connectivity: EBI/EMI, FIFO, I2C, IrDA, SPI, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number of I/O: 72
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 144K x 8
• Voltage - Supply (Vcc/Vdd): 1.43 V ~ 1.58 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 208-LBGA
• Supplier Device Package: P-LBGA-208-2

封裝: 208-LBGA

ESD5V0S1U02VH6327XTSA1

Infineon Technologies

TVS DIODE 5VWM 14.5VC SC7921

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 5.7V
• Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
• Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
• Power - Peak Pulse: 66W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 35pF @ 1MHz
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: PG-SC79-2

封裝: SC-79, SOD-523

TLE6228GPNT

Infineon Technologies

IC SW SMART QUAD LOWSIDE PDSO20

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

CY9AF311NAPMC-GNE2

Infineon Technologies

IC MCU 32BIT 64KB FLASH 100LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

封裝: -

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2EDL8033G4BXTMA1

Infineon Technologies

INT. POWERSTAGE/DRIVER

• Output Configuration: -
• Applications: -
• Interface: -
• Load Type: -
• Technology: -
• Rds On (Typ): -
• Current - Output / Channel: -
• Current - Peak Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Features: -
• Fault Protection: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

AIKW50N65RF5XKSA1

Infineon Technologies

SIC_DISCRETE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 250 W
• Switching Energy: 310µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 109 nC
• Td (on/off) @ 25°C: 20ns/156ns
• Test Condition: 400V, 25A, 12Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: -

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S25HL01GTFABHB030

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

封裝: -

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CYT4BF8CEDQ0AEEGS

Infineon Technologies

IC MCU 32BT 8.1875MB FLSH 176QFP

• Core Processor: ARM® Cortex®-M0+/M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 350MHz
• Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number of I/O: 148
• Program Memory Size: 8.1875MB (8.1875M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256 x 8
• RAM Size: 1M x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 99x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 176-TEQFP (24x24)

封裝: -

T2200N16H100XPSA1

Infineon Technologies

STD THYR/DIODEN DISC

• Voltage - Off State: -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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FF150R12KE3B8BOSA1

Infineon Technologies

MOD IGBT LOW PWR ECONO2-6

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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IPW65R115CFD7AXKSA1

Infineon Technologies

MOSFET N-CH 650V 21A TO247-3-41

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 490µA
• Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-41
• Package / Case: TO-247-3

封裝: -

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BUZ32HXKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

封裝: -

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SIGC07T60SNCX1SA4

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 6 A
• Current - Collector Pulsed (Icm): 18 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 24ns/248ns
• Test Condition: 400V, 6A, 50Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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S26HS01GTGABHB020

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 5.45 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

封裝: -

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IPA90R500C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 11A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 740µA
• Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

封裝: -

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IPD70N10S3L12ATMA2

Infineon Technologies

MOSFET_(75V 120V(

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 83µA
• Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-11
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

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