頁 122 - Infineon Technologies 產品

零件編號	製造商	描述	封裝	庫存
IRF8113GTRPBF	Infineon Technologies	MOSFET N-CH 30V 17.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存660,228
SPP80N06S2-08	Infineon Technologies	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封裝: TO-220-3	庫存68,100
IRF6215SPBF	Infineon Technologies	MOSFET P-CH 150V 13A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存16,848
IRF3711ZCSTRL	Infineon Technologies	MOSFET N-CH 20V 92A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,216
IRFSL7540PBF	Infineon Technologies	MOSFET N-CH 60V 120A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存5,376
SPS03N60C3BKMA1	Infineon Technologies	MOSFET N-CH 650V 3.2A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	封裝: TO-251-3 Stub Leads, IPak	庫存7,936
IRF7331PBF	Infineon Technologies	MOSFET 2N-CH 20V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存2,320
IRF7342TRPBF	Infineon Technologies	MOSFET 2P-CH 55V 3.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存728,520
BBY 52-02W E6327	Infineon Technologies	DIODE TUNING 7V 20MA SCD-80 Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz Capacitance Ratio: 2.1 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 7V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	封裝: SC-80	庫存3,472
IRS2301STRPBF	Infineon Technologies	IC DVR HI/LOW SIDE 600V 8SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 5 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 130ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,216
PSF 21150 F V1.4	Infineon Technologies	IC NETWORK TERMINATOR TQFP-64 Function: PC Adapter Circuit Interface: ISDN Number of Circuits: 1 Voltage - Supply: 3.3V Current - Supply: 30mA Power (Watts): - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: P-TQFP-64	封裝: 64-LQFP	庫存2,688
SAK-XC888LM-6FFI 5V AC	Infineon Technologies	IC MCU 8BIT 24KB FLASH 64TQFP Core Processor: XC800 Core Size: 8-Bit Speed: 24MHz Connectivity: LIN, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 48 Program Memory Size: 24KB (24K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 1.75K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	封裝: 64-LQFP	庫存3,744
TC1767256F80HLADKXUMA1	Infineon Technologies	IC MCU 32BIT 2MB FLASH 176LQFP Core Processor: TriCore? Core Size: 32-Bit Speed: 80MHz Connectivity: ASC, CAN, MLI, MSC, SSC Peripherals: DMA, POR, WDT Number of I/O: 88 Program Memory Size: 2MB (2M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V Data Converters: A/D 4x10b, 32x12b Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 176-LQFP Supplier Device Package: 176-LQFP (24x24)	封裝: 176-LQFP	庫存5,152
ESD208B102ELSE6327XTSA1	Infineon Technologies	TVS DIODE 3.3VWM 8.1VC TSSLP2-3 Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 3.3V (Max) Voltage - Breakdown (Min): 3.65V Voltage - Clamping (Max) @ Ipp: 8.1V Current - Peak Pulse (10/1000µs): 4A (8/20µs) Power - Peak Pulse: 30W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 2-XFDFN Supplier Device Package: TSSLP-2-3	封裝: 2-XFDFN	庫存120,420
BGA420E6327BTSA1	Infineon Technologies	AMP SI-MMIC 6V 15MA SOT-343 Frequency: 0Hz ~ 3GHz P1dB: -2.5dBm Gain: 13dB Noise Figure: 2.3dB RF Type: General Purpose Voltage - Supply: 3 V ~ 6 V Current - Supply: 6.7mA Test Frequency: 1GHz Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封裝: SC-82A, SOT-343	庫存8,514
ASP1211-A62NT	Infineon Technologies	IC REGULATOR PG-VQFN-56-901 Applications: - Voltage - Input: - Number of Outputs: - Voltage - Output: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,216
CY95F696KNPMC-G-UNE2	Infineon Technologies	MULTI-MARKET MCUS Core Processor: F²MC-8FX Core Size: 8-Bit Speed: 16MHz Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Number of I/O: 41 Program Memory Size: 36KB (36K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 1K x 8 Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V Data Converters: A/D 12x8/10b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LQFP Supplier Device Package: 48-LQFP (7x7)	封裝: -	Request a Quote
S6J334CHEESE20000	Infineon Technologies	TRAVEO-40NM Core Processor: ARM® Cortex®-R5F Core Size: 32-Bit Speed: 240MHz Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 116 Program Memory Size: 2.0625MB (2.0625M x 8) Program Memory Type: FLASH EEPROM Size: 112K x 8 RAM Size: 544K x 8 Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Data Converters: A/D 35x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Supplier Device Package: 144-TEQFP (20x20)	封裝: -	Request a Quote
IR3565BMFS08TRP	Infineon Technologies	IC DC/DC MULTIPHASE CTLR Applications: - Voltage - Input: - Number of Outputs: - Voltage - Output: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote
FD401R17KF6CB2NOSA1	Infineon Technologies	FD401R17 - IGBT MODULE IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote
F411MR12W2M1HPB76BPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存27
CY9BF524MBGL-GK9E1	Infineon Technologies	IC MCU 32BIT 288KB FLASH 96FBGA Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 72MHz Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 65 Program Memory Size: 288KB (288K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 26x12b; D/A 2x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 96-LFBGA Supplier Device Package: 96-FBGA (6x6)	封裝: -	Request a Quote
IRF7404QTRPBF	Infineon Technologies	MOSFET P-CH 20V 6.7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: -	Request a Quote
ND171N12KHPSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 171A PB34-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 171A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB34-1 Operating Temperature - Junction: -40°C ~ 135°C	封裝: -	Request a Quote
IRL1404PBF-INF	Infineon Technologies	MOSFET N-CH 40V 160A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封裝: -	Request a Quote
BSZ0910NDXTMA1	Infineon Technologies	MOSFET 2N-CH 30V 9.5A WISON-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Power - Max: 1.9W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-WISON-8	封裝: -	Request a Quote
CY7C1354C-200BGXCT	Infineon Technologies	IC SRAM 9MBIT PARALLEL 119PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, ZBT Memory Size: 9Mbit Memory Interface: Parallel Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 3.2 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: -	Request a Quote
IS26KS128S-DPBLA300-TR	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote

IRF8113GTRPBF

Infineon Technologies

MOSFET N-CH 30V 17.2A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存660,228

SPP80N06S2-08

Infineon Technologies

MOSFET N-CH 55V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封裝: TO-220-3

庫存68,100

IRF6215SPBF

Infineon Technologies

MOSFET P-CH 150V 13A D2PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存16,848

IRF3711ZCSTRL

Infineon Technologies

MOSFET N-CH 20V 92A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,216

IRFSL7540PBF

Infineon Technologies

MOSFET N-CH 60V 120A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 65A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存5,376

SPS03N60C3BKMA1

Infineon Technologies

MOSFET N-CH 650V 3.2A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Stub Leads, IPak

封裝: TO-251-3 Stub Leads, IPak

庫存7,936

IRF7331PBF

Infineon Technologies

MOSFET 2N-CH 20V 7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存2,320

IRF7342TRPBF

Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存728,520

BBY 52-02W E6327

Infineon Technologies

DIODE TUNING 7V 20MA SCD-80

Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
Capacitance Ratio: 2.1
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 7V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

封裝: SC-80

庫存3,472

IRS2301STRPBF

Infineon Technologies

IC DVR HI/LOW SIDE 600V 8SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 5 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 130ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,216

PSF 21150 F V1.4

Infineon Technologies

IC NETWORK TERMINATOR TQFP-64

Function: PC Adapter Circuit
Interface: ISDN
Number of Circuits: 1
Voltage - Supply: 3.3V
Current - Supply: 30mA
Power (Watts): -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: P-TQFP-64

封裝: 64-LQFP

庫存2,688

SAK-XC888LM-6FFI 5V AC

Infineon Technologies

IC MCU 8BIT 24KB FLASH 64TQFP

Core Processor: XC800
Core Size: 8-Bit
Speed: 24MHz
Connectivity: LIN, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 48
Program Memory Size: 24KB (24K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 1.75K x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

封裝: 64-LQFP

庫存3,744

TC1767256F80HLADKXUMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 176LQFP

Core Processor: TriCore?
Core Size: 32-Bit
Speed: 80MHz
Connectivity: ASC, CAN, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Number of I/O: 88
Program Memory Size: 2MB (2M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
Data Converters: A/D 4x10b, 32x12b
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 176-LQFP
Supplier Device Package: 176-LQFP (24x24)

封裝: 176-LQFP

庫存5,152

ESD208B102ELSE6327XTSA1

Infineon Technologies

TVS DIODE 3.3VWM 8.1VC TSSLP2-3

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Power - Peak Pulse: 30W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-XFDFN
Supplier Device Package: TSSLP-2-3

封裝: 2-XFDFN

庫存120,420

BGA420E6327BTSA1

Infineon Technologies

AMP SI-MMIC 6V 15MA SOT-343

Frequency: 0Hz ~ 3GHz
P1dB: -2.5dBm
Gain: 13dB
Noise Figure: 2.3dB
RF Type: General Purpose
Voltage - Supply: 3 V ~ 6 V
Current - Supply: 6.7mA
Test Frequency: 1GHz
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封裝: SC-82A, SOT-343

庫存8,514

ASP1211-A62NT

Infineon Technologies

IC REGULATOR PG-VQFN-56-901

Applications: -
Voltage - Input: -
Number of Outputs: -
Voltage - Output: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,216

CY95F696KNPMC-G-UNE2

Infineon Technologies

MULTI-MARKET MCUS

Core Processor: F²MC-8FX
Core Size: 8-Bit
Speed: 16MHz
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Number of I/O: 41
Program Memory Size: 36KB (36K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 1K x 8
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Data Converters: A/D 12x8/10b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Supplier Device Package: 48-LQFP (7x7)

封裝: -

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S6J334CHEESE20000

Infineon Technologies

TRAVEO-40NM

Core Processor: ARM® Cortex®-R5F
Core Size: 32-Bit
Speed: 240MHz
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 116
Program Memory Size: 2.0625MB (2.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 112K x 8
RAM Size: 544K x 8
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Data Converters: A/D 35x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Supplier Device Package: 144-TEQFP (20x20)

封裝: -

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IR3565BMFS08TRP

Infineon Technologies

IC DC/DC MULTIPHASE CTLR

Applications: -
Voltage - Input: -
Number of Outputs: -
Voltage - Output: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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FD401R17KF6CB2NOSA1

Infineon Technologies

FD401R17 - IGBT MODULE

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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F411MR12W2M1HPB76BPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存27

CY9BF524MBGL-GK9E1

Infineon Technologies

IC MCU 32BIT 288KB FLASH 96FBGA

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 72MHz
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 65
Program Memory Size: 288KB (288K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 26x12b; D/A 2x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Supplier Device Package: 96-FBGA (6x6)

封裝: -

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IRF7404QTRPBF

Infineon Technologies

MOSFET P-CH 20V 6.7A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: -

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ND171N12KHPSA1

Infineon Technologies

DIODE GEN PURP 1.2KV 171A PB34-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 171A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB34-1
Operating Temperature - Junction: -40°C ~ 135°C

封裝: -

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IRL1404PBF-INF

Infineon Technologies

MOSFET N-CH 40V 160A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: -

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BSZ0910NDXTMA1

Infineon Technologies

MOSFET 2N-CH 30V 9.5A WISON-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Power - Max: 1.9W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-WISON-8

封裝: -

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CY7C1354C-200BGXCT

Infineon Technologies

IC SRAM 9MBIT PARALLEL 119PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, ZBT
Memory Size: 9Mbit
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.2 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: -

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IS26KS128S-DPBLA300-TR

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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