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Infineon Technologies 產品

記錄 16,988
頁  10/607
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IRG7CH81K10EF-R
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 745nC
  • Td (on/off) @ 25°C: 70ns/330ns
  • Test Condition: 600V, 150A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存2,976
IRGR3B60KD2TRRP
Infineon Technologies

IGBT 600V 7.8A 52W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7.8A
  • Current - Collector Pulsed (Icm): 15.6A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
  • Power - Max: 52W
  • Switching Energy: 62µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 3A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 77ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,736
IRG7T50HF12A
Infineon Technologies

MOD IGBT 1200V 50A POWIR 34

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 340W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 6.7nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 34 Module
  • Supplier Device Package: POWIR? 34
封裝: POWIR? 34 Module
庫存3,312
BTS121AE3045ANTMA1
Infineon Technologies

MOSFET N CH 100V 22A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,424
IPD088N04LGBTMA1
Infineon Technologies

MOSFET N-CH 40V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 16µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,544
IPB096N03LGATMA1
Infineon Technologies

MOSFET N-CH 30V 35A TO-263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,568
IRLR3303PBF
Infineon Technologies

MOSFET N-CH 30V 35A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,032
IRF7703TR
Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存6,016
IPD80P03P4L07ATMA1
Infineon Technologies

MOSFET P-CH 30V 80A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,696
hot IRFP150NPBF
Infineon Technologies

MOSFET N-CH 100V 42A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存33,708
hot IRF7204TRPBF
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存1,730,328
BF799E6327HTSA1
Infineon Technologies

TRANSISTOR NPN RF 20V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 3dB @ 100MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存4,016
SIDC03D120H6
Infineon Technologies

DIODE GEN PURP 1.2KV 3A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: Die
庫存7,312
hot TLE7244SL
Infineon Technologies

IC DRIVER SPI 8CH LS 24SSOP

  • Switch Type: Relay, Solenoid Driver
  • Number of Outputs: 8
  • Ratio - Input:Output: 1:2
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: SPI
  • Voltage - Load: 4.5 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Current - Output (Max): 290mA
  • Rds On (Typ): 800 mOhm
  • Input Type: -
  • Features: -
  • Fault Protection: Open Load Detect, Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 24-SSOP (0.154", 3.90mm Width)
  • Supplier Device Package: PG-SSOP-24
封裝: 24-SSOP (0.154", 3.90mm Width)
庫存110,676
hot IR21571
Infineon Technologies

IC BALLAST CONTROL 16-DIP

  • Type: Ballast Controller
  • Frequency: 45.5kHz ~ 50.5kHz
  • Voltage - Supply: 10.5 V ~ 16.5 V
  • Current - Supply: 5.5mA
  • Current - Output Source/Sink: -
  • Dimming: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
封裝: 16-DIP (0.300", 7.62mm)
庫存198,312
PX8897EDQG-R2-ER1235-A
Infineon Technologies

IC REGULATOR PG-VQFN-48-2

  • Applications: -
  • Voltage - Input: -
  • Number of Outputs: -
  • Voltage - Output: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,328
IR38060MGM18TRP
Infineon Technologies

IC REG DC-DC 35IQFN

  • Function: -
  • Output Configuration: -
  • Topology: -
  • Output Type: -
  • Number of Outputs: -
  • Voltage - Input (Min): -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Current - Output: -
  • Frequency - Switching: -
  • Synchronous Rectifier: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,704
BTS710404ESEXUMA1
Infineon Technologies

SPOC

  • Switch Type: General Purpose
  • Number of Outputs: 4
  • Ratio - Input:Output: 1:2
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: SPI
  • Voltage - Load: 6V ~ 18V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 3A
  • Rds On (Typ): 22.5mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-24
封裝: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
庫存7,584
40060531
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
05529-1790000
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
T690N06TOFXPSA1
Infineon Technologies

SCR MODULE 600V 900A DO200AA

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 600 V
  • Current - On State (It (AV)) (Max): 694 A
  • Current - On State (It (RMS)) (Max): 900 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.4 V
  • Current - Gate Trigger (Igt) (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
  • Current - Hold (Ih) (Max): 200 mA
  • Operating Temperature: -40°C ~ 140°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AA
封裝: -
Request a Quote
TD142N16KOFHPSA1
Infineon Technologies

SCR MODULE 1600V 230A MODULE

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 142 A
  • Current - On State (It (RMS)) (Max): 230 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
  • Current - Hold (Ih) (Max): 200 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封裝: -
Request a Quote
CY9BF522MBGL-GK9E1
Infineon Technologies

IC MCU 32BIT 160KB FLASH 96FBGA

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit Single-Core
  • Speed: 72MHz
  • Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 65
  • Program Memory Size: 160KB (160K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 26x12b; D/A 2x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 96-LFBGA
  • Supplier Device Package: 96-FBGA (6x6)
封裝: -
Request a Quote
PXP1600CPQG003XUMA1
Infineon Technologies

IC CONTROLLER

  • Output Type: -
  • Function: -
  • Output Configuration: -
  • Topology: -
  • Number of Outputs: -
  • Output Phases: -
  • Voltage - Supply (Vcc/Vdd): -
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: -
  • Clock Sync: -
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
S26HS512TGABHM003
Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 5.45 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
封裝: -
Request a Quote
S6J336CHSBSL20000
Infineon Technologies

IC MCU 32BIT 112KB FLASH 144LQFP

  • Core Processor: ARM® Cortex®-R5F
  • Core Size: 32-Bit
  • Speed: 132MHz
  • Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
  • Peripherals: DMA, I2S, LVD, POR, PWM, WDT
  • Number of I/O: 94
  • Program Memory Size: 112KB (112K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 128K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 40x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-LQFP
  • Supplier Device Package: 144-LQFP (16x16)
封裝: -
Request a Quote
TD251N16KOFHPSA1
Infineon Technologies

SCR MODULE 1800V 410A MODULE

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1.8 kV
  • Current - On State (It (AV)) (Max): 250 A
  • Current - On State (It (RMS)) (Max): 410 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 200 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封裝: -
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S29AL016J70FFM023
Infineon Technologies

IC FLASH 16MBIT CFI 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 16Mbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
封裝: -
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