頁 4 - Infineon Technologies 產品 - 二極體 - 整流器 - 單 | 黑森爾電子
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Infineon Technologies 產品 - 二極體 - 整流器 - 單

記錄 805
頁  4/29
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BAS40B5000
Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 30 V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
  • Operating Temperature - Junction: 150°C
封裝: -
Request a Quote
40 V
120mA
1 V @ 40 mA
Small Signal =< 200mA (Io), Any Speed
-
1 µA @ 30 V
3pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
150°C
D770N16TXPSA1
Infineon Technologies

DIODE GEN PURP 1.6KV 770A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 770A
  • Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
1600 V
770A
1.08 V @ 400 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1600 V
-
Clamp On
DO-200AA, A-PUK
-
-40°C ~ 180°C
SIDC07D60F6X7SA1
Infineon Technologies

DIODE GEN PURP 600V 22.5A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 22.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
22.5A
1.6 V @ 22.5 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
IDH03SG60CXKSA2
Infineon Technologies

DIODE SIL CARB 600V 3A TO220-2-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
600 V
3A
2.3 V @ 3 A
No Recovery Time > 500mA (Io)
0 ns
15 µA @ 600 V
60pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
GATELEADWHBN661XXPSA1
Infineon Technologies

STD THYR/DIODEN DISC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DZ950N44KHPSA1
Infineon Technologies

DIODE GEN PURP 4.4KV 950A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4400 V
  • Current - Average Rectified (Io): 950A
  • Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
庫存3
4400 V
950A
1.78 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4400 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
AIDW10S65C5XKSA1
Infineon Technologies

DIODE SIL CARB 650V 10A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Capacitance @ Vr, F: 303pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
650 V
10A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 650 V
303pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
SIDC09D60E6X1SA1
Infineon Technologies

DIODE GP 600V 20A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
600 V
20A
1.7 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC09D60E6X1SA3
Infineon Technologies

DIODE GEN PURP 600V 20A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
600 V
20A
1.7 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
D690S26TS01XPSA1
Infineon Technologies

DIODE GP 2.6KV 690A D5726K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2600 V
  • Current - Average Rectified (Io): 690A
  • Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 9 µs
  • Current - Reverse Leakage @ Vr: 25 mA @ 2600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: BG-D5726K-1
  • Operating Temperature - Junction: 150°C (Max)
封裝: -
Request a Quote
2600 V
690A
2.7 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
9 µs
25 mA @ 2600 V
-
Clamp On
DO-200AB, B-PUK
BG-D5726K-1
150°C (Max)
D1721NH90TAOSA1
Infineon Technologies

DIODE GEN PURP 2160A D10026K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 2160A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200, Variant
  • Supplier Device Package: BG-D10026K-1
  • Operating Temperature - Junction: 0°C ~ 140°C
封裝: -
Request a Quote
-
2160A
-
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 9000 V
-
Chassis Mount
DO-200, Variant
BG-D10026K-1
0°C ~ 140°C
ND89N16KHPSA1
Infineon Technologies

DIODE GEN PURP 1.6KV 89A PB20-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 89A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB20-1
  • Operating Temperature - Junction: -40°C ~ 135°C
封裝: -
庫存33
1600 V
89A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
-
Chassis Mount
Module
BG-PB20-1
-40°C ~ 135°C
ND89N16KHPSA2
Infineon Technologies

THYR / DIODE MODULE DK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 89A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1.6 kV
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: 150°C
封裝: -
Request a Quote
1600 V
89A
1.5 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1.6 kV
-
Chassis Mount
Module
-
150°C
DDB6U100N16RBOSA1
Infineon Technologies

DIODE GP 1.6KV 104A AG-ECONO2A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 104A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2A
  • Operating Temperature - Junction: 150°C
封裝: -
Request a Quote
1600 V
104A
1.55 V @ 100 A
Standard Recovery >500ns, > 200mA (Io)
-
5 mA @ 1600 V
-
Chassis Mount
Module
AG-ECONO2A
150°C
SIDC14D60F6X1SA1
Infineon Technologies

DIODE GEN PURP 600V 45A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
45A
1.6 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC14D60F6X1SA2
Infineon Technologies

DIODE GP 600V 45A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
600 V
45A
1.6 V @ 45 A
Fast Recovery =< 500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC14D60F6X1SA3
Infineon Technologies

DIODE GEN PURP 600V 45A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
45A
1.6 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC14D60F6X1SA4
Infineon Technologies

DIODE GEN PURP 600V 45A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
45A
1.6 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
D1481N65TVFXPSA1
Infineon Technologies

DIODE GP 6.8KV 2200A D7626K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6800 V
  • Current - Average Rectified (Io): 2200A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 6800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D7626K-1
  • Operating Temperature - Junction: 160°C (Max)
封裝: -
Request a Quote
6800 V
2200A
1.8 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 6800 V
-
Clamp On
DO-200AC, K-PUK
BG-D7626K-1
160°C (Max)
SIDC105D120H8X1SA1
Infineon Technologies

DIODE GP 1.2KV 200A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
1200 V
200A
1.41 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
IDD05SG60CXTMA2
Infineon Technologies

DIODE SIL CARB 600V 5A TO252-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 600 V
  • Capacitance @ Vr, F: 110pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存15,000
600 V
5A
2.3 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
30 µA @ 600 V
110pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
GATELEADWHBK750XXPSA1
Infineon Technologies

STD THYR/DIODEN DISC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SIDC03D60C8X1SA2
Infineon Technologies

DIODE GEN PURP 600V 10A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
10A
1.95 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
DZ600N16KB01HPSA1
Infineon Technologies

DIODE GP 1.8KV 735A PB501-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 735A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB501-1
  • Operating Temperature - Junction: 150°C (Max)
封裝: -
Request a Quote
1800 V
735A
-
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1800 V
-
Chassis Mount
Module
BG-PB501-1
150°C (Max)
D8320N04TVFXPSA1
Infineon Technologies

DIODE GEN PURP 400V 8320A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 8320A
  • Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: -
  • Operating Temperature - Junction: -25°C ~ 150°C
封裝: -
Request a Quote
400 V
8320A
795 mV @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 400 V
-
Chassis Mount
DO-200AD
-
-25°C ~ 150°C
SIDC50D60C6X1SA1
Infineon Technologies

DIODE GP 600V 200A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
200A
1.9 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
IDWD140E120D7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
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IDD15E60BUMA1
Infineon Technologies

DIODE GP 600V 29.2A TO252-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 29.2A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 87 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
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600 V
29.2A
2 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
87 ns
50 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
-40°C ~ 175°C