頁 19 - Infineon Technologies 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDH04G65C6XKSA1	Infineon Technologies	SIC DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存3,552	-	-	-	-	-	-	-	-	-	-	-
IDK04G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 4A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 670µA @ 650V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,808	650V	4A (DC)	1.8V @ 4A	No Recovery Time > 500mA (Io)	0ns	670µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDP18E120XKSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 31A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 31A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 18A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 195ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-2	庫存4,960	1200V	31A (DC)	2.15V @ 18A	Fast Recovery =< 500ns, > 200mA (Io)	195ns	100µA @ 1200V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 150°C
IDK03G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 3A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 500µA @ 650V Capacitance @ Vr, F: 100pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存5,136	650V	3A (DC)	1.8V @ 3A	No Recovery Time > 500mA (Io)	0ns	500µA @ 650V	100pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDW30E60FKSA1	Infineon Technologies	DIODE GEN PURP 600V 60A TO247-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 143ns Current - Reverse Leakage @ Vr: 40µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-247-3	庫存5,856	600V	60A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	143ns	40µA @ 600V	-	Through Hole	TO-247-3	TO-247-3	-40°C ~ 175°C
IDB30E60ATMA1	Infineon Technologies	DIODE GEN PURP 600V 52.3A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 52.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 126ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,528	600V	52.3A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	126ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3-2	-40°C ~ 175°C
IDP30E60XKSA1	Infineon Technologies	DIODE GEN PURP 600V 52.3A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 52.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 126ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存7,312	600V	52.3A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	126ns	50µA @ 600V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDP30E65D2XKSA1	Infineon Technologies	DIODE GEN PURP 650V 60A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 60A (DC) Voltage - Forward (Vf) (Max) @ If: 2.2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-220-2	庫存3,296	650V	60A (DC)	2.2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	40µA @ 650V	-	Through Hole	TO-220-2	PG-TO220-2-1	-40°C ~ 175°C
IDK02G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 2A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 330µA @ 650V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存4,944	650V	2A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	330µA @ 650V	70pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDB15E60ATMA1	Infineon Technologies	DIODE GEN PURP 600V 29.2A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.2A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,360	600V	29.2A (DC)	2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	87ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3	-40°C ~ 175°C
IDP12E120XKSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 28A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 28A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-2	庫存3,600	1200V	28A (DC)	2.15V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	100µA @ 1200V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 150°C
IDP15E60XKSA1	Infineon Technologies	DIODE GEN PURP 600V 29.2A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.2A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存4,048	600V	29.2A (DC)	2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	87ns	50µA @ 600V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDP20E65D2XKSA1	Infineon Technologies	DIODE GEN PURP 650V 40A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 40A (DC) Voltage - Forward (Vf) (Max) @ If: 2.2V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-220-2	庫存2,336	650V	40A (DC)	2.2V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	40µA @ 650V	-	Through Hole	TO-220-2	PG-TO220-2-1	-40°C ~ 175°C
BAT2402ELSE6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4V Current - Average Rectified (Io): 110mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1V Capacitance @ Vr, F: 230pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XFDFN Supplier Device Package: PG-TSSLP-2-1 Operating Temperature - Junction: -55°C ~ 150°C	封裝: 2-XFDFN	庫存3,232	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	230pF @ 0V, 1MHz	Surface Mount	2-XFDFN	PG-TSSLP-2-1	-55°C ~ 150°C
IDD15E60BUMA2	Infineon Technologies	DIODE GEN PURP 600V 29.2A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.2A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存5,648	600V	29.2A (DC)	2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	87ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD09E60BUMA1	Infineon Technologies	DIODE GEN PURP 600V 19.3A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 19.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存2,064	600V	19.3A (DC)	2V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD06E60BUMA1	Infineon Technologies	DIODE GEN PURP 600V 14.7A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 14.7A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存5,488	600V	14.7A (DC)	2V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
BAT1502LSE6433XTMA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA TSSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4V Current - Average Rectified (Io): 110mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1V Capacitance @ Vr, F: 350pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XFDFN Supplier Device Package: PG-TSSLP-2-3 Operating Temperature - Junction: -55°C ~ 150°C	封裝: 2-XFDFN	庫存3,488	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	350pF @ 0V, 1MHz	Surface Mount	2-XFDFN	PG-TSSLP-2-3	-55°C ~ 150°C
BAT1502ELE6327XTMA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4V Current - Average Rectified (Io): 110mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1V Capacitance @ Vr, F: 350pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: PG-TSLP-2-19 Operating Temperature - Junction: -55°C ~ 150°C	封裝: 2-XDFN	庫存3,328	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	350pF @ 0V, 1MHz	Surface Mount	2-XDFN	PG-TSLP-2-19	-55°C ~ 150°C
BAW78DH6327XTSA1	Infineon Technologies	DIODE GP 400V 1A SOT89 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 10pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89 Operating Temperature - Junction: 150°C (Max)	封裝: TO-243AA	庫存5,488	400V	1A (DC)	1.6V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1µs	1µA @ 400V	10pF @ 0V, 1MHz	Surface Mount	TO-243AA	PG-SOT89	150°C (Max)
BAT6202VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 40V SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 20mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 2mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 40V Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	封裝: SC-79, SOD-523	庫存2,208	40V	20mA (DC)	1V @ 2mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 40V	0.6pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAS3005S02LRHE6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 500MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 30V Capacitance @ Vr, F: 15pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: -55°C ~ 150°C	封裝: SOD-882	庫存3,568	30V	500mA (DC)	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 30V	15pF @ 5V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	-55°C ~ 150°C
BAT5402LRHE6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 200MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: 150°C (Max)	封裝: SOD-882	庫存3,552	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	150°C (Max)
BAS7002VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY HS 70V 70MA SC79 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C (Max)	封裝: SC-79, SOD-523	庫存2,368	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	100ps	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SOD323-2	150°C (Max)
BAS5202VH6433XTMA1	Infineon Technologies	DIODE SCHOTTKY 45V 750MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 750mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 45V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	封裝: SC-79, SOD-523	庫存7,280	45V	750mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 45V	10pF @ 10V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAS7002LE6327XTMA1	Infineon Technologies	DIODE SCHOTTKY 70V 70MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: -55°C ~ 125°C	封裝: SOD-882	庫存3,920	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	100ps	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	-55°C ~ 125°C
BAS4002LE6327XTMA1	Infineon Technologies	DIODE SCHOTTKY 40V 120MA TSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 1µA @ 30V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: -55°C ~ 150°C	封裝: SOD-882	庫存3,184	40V	120mA (DC)	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	100ps	1µA @ 30V	5pF @ 0V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	-55°C ~ 150°C
BAT54WH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 200MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150°C (Max)	封裝: SC-70, SOT-323	庫存7,776	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	PG-SOT323-3	150°C (Max)

IDH04G65C6XKSA1

Infineon Technologies

SIC DIODES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存3,552

-

IDK04G65C5XTMA2

Infineon Technologies

DIODE SCHOTTKY 650V 4A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 670µA @ 650V
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,808

650V

4A (DC)

1.8V @ 4A

No Recovery Time > 500mA (Io)

0ns

670µA @ 650V

130pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

IDP18E120XKSA1

Infineon Technologies

DIODE GEN PURP 1.2KV 31A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 31A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 18A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 195ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2

庫存4,960

1200V

31A (DC)

2.15V @ 18A

Fast Recovery =< 500ns, > 200mA (Io)

195ns

100µA @ 1200V

-

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 150°C

IDK03G65C5XTMA2

Infineon Technologies

DIODE SCHOTTKY 650V 3A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 500µA @ 650V
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存5,136

650V

3A (DC)

1.8V @ 3A

No Recovery Time > 500mA (Io)

0ns

500µA @ 650V

100pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

IDW30E60FKSA1

Infineon Technologies

DIODE GEN PURP 600V 60A TO247-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143ns
Current - Reverse Leakage @ Vr: 40µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-247-3

庫存5,856

600V

60A (DC)

2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

143ns

40µA @ 600V

-

Through Hole

TO-247-3

-40°C ~ 175°C

IDB30E60ATMA1

Infineon Technologies

DIODE GEN PURP 600V 52.3A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 52.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,528

600V

52.3A (DC)

2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

126ns

50µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-3-2

-40°C ~ 175°C

IDP30E60XKSA1

Infineon Technologies

DIODE GEN PURP 600V 52.3A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 52.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存7,312

600V

52.3A (DC)

2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

126ns

50µA @ 600V

-

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDP30E65D2XKSA1

Infineon Technologies

DIODE GEN PURP 650V 60A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 60A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-220-2

庫存3,296

650V

60A (DC)

2.2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

42ns

40µA @ 650V

-

Through Hole

TO-220-2

PG-TO220-2-1

-40°C ~ 175°C

IDK02G65C5XTMA2

Infineon Technologies

DIODE SCHOTTKY 650V 2A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 330µA @ 650V
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存4,944

650V

2A (DC)

1.8V @ 2A

No Recovery Time > 500mA (Io)

0ns

330µA @ 650V

70pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

IDB15E60ATMA1

Infineon Technologies

DIODE GEN PURP 600V 29.2A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 29.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,360

600V

29.2A (DC)

2V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

87ns

50µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-3

-40°C ~ 175°C

IDP12E120XKSA1

Infineon Technologies

DIODE GEN PURP 1.2KV 28A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 28A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2

庫存3,600

1200V

28A (DC)

2.15V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

100µA @ 1200V

-

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 150°C

IDP15E60XKSA1

Infineon Technologies

DIODE GEN PURP 600V 29.2A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 29.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存4,048

600V

29.2A (DC)

2V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

87ns

50µA @ 600V

-

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDP20E65D2XKSA1

Infineon Technologies

DIODE GEN PURP 650V 40A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 40A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-220-2

庫存2,336

650V

40A (DC)

2.2V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

32ns

40µA @ 650V

-

Through Hole

TO-220-2

PG-TO220-2-1

-40°C ~ 175°C

BAT2402ELSE6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 4V 110MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 4V
Current - Average Rectified (Io): 110mA (DC)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1V
Capacitance @ Vr, F: 230pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XFDFN
Supplier Device Package: PG-TSSLP-2-1
Operating Temperature - Junction: -55°C ~ 150°C

封裝: 2-XFDFN

庫存3,232

4V

110mA (DC)

410mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 1V

230pF @ 0V, 1MHz

Surface Mount

2-XFDFN

PG-TSSLP-2-1

-55°C ~ 150°C

IDD15E60BUMA2

Infineon Technologies

DIODE GEN PURP 600V 29.2A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 29.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存5,648

600V

29.2A (DC)

2V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

87ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PG-TO252-3

-55°C ~ 175°C

IDD09E60BUMA1

Infineon Technologies

DIODE GEN PURP 600V 19.3A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 19.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存2,064

600V

19.3A (DC)

2V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PG-TO252-3

-55°C ~ 175°C

IDD06E60BUMA1

Infineon Technologies

DIODE GEN PURP 600V 14.7A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 14.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存5,488

600V

14.7A (DC)

2V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

70ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PG-TO252-3

-55°C ~ 175°C

BAT1502LSE6433XTMA1

Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSSLP-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 4V
Current - Average Rectified (Io): 110mA (DC)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1V
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XFDFN
Supplier Device Package: PG-TSSLP-2-3
Operating Temperature - Junction: -55°C ~ 150°C

封裝: 2-XFDFN

庫存3,488

4V

110mA (DC)

410mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 1V

350pF @ 0V, 1MHz

Surface Mount

2-XFDFN

PG-TSSLP-2-3

-55°C ~ 150°C

BAT1502ELE6327XTMA1

Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSLP-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 4V
Current - Average Rectified (Io): 110mA (DC)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1V
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: PG-TSLP-2-19
Operating Temperature - Junction: -55°C ~ 150°C

封裝: 2-XDFN

庫存3,328

4V

110mA (DC)

410mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 1V

350pF @ 0V, 1MHz

Surface Mount

2-XDFN

PG-TSLP-2-19

-55°C ~ 150°C

BAW78DH6327XTSA1

Infineon Technologies

DIODE GP 400V 1A SOT89

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89
Operating Temperature - Junction: 150°C (Max)

封裝: TO-243AA

庫存5,488

400V

1A (DC)

1.6V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1µs

1µA @ 400V

10pF @ 0V, 1MHz

Surface Mount

TO-243AA

PG-SOT89

150°C (Max)

BAT6202VH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 40V SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 20mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 2mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 40V
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)

封裝: SC-79, SOD-523

庫存2,208

40V

20mA (DC)

1V @ 2mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 40V

0.6pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

150°C (Max)

BAS3005S02LRHE6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 500MA TSLP-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 30V
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2
Operating Temperature - Junction: -55°C ~ 150°C

封裝: SOD-882

庫存3,568

30V

500mA (DC)

500mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 30V

15pF @ 5V, 1MHz

Surface Mount

SOD-882

PG-TSLP-2

-55°C ~ 150°C

BAT5402LRHE6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 200MA TSLP-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2
Operating Temperature - Junction: 150°C (Max)

封裝: SOD-882

庫存3,552

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SOD-882

PG-TSLP-2

150°C (Max)

BAS7002VH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY HS 70V 70MA SC79

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100ps
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)

封裝: SC-79, SOD-523

庫存2,368

70V

70mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

100ps

100nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SOD323-2

150°C (Max)

BAS5202VH6433XTMA1

Infineon Technologies

DIODE SCHOTTKY 45V 750MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 750mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 45V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)

封裝: SC-79, SOD-523

庫存7,280

45V

750mA (DC)

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 45V

10pF @ 10V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

150°C (Max)

BAS7002LE6327XTMA1

Infineon Technologies

DIODE SCHOTTKY 70V 70MA TSLP-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100ps
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2
Operating Temperature - Junction: -55°C ~ 125°C

封裝: SOD-882

庫存3,920

70V

70mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

100ps

100nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

SOD-882

PG-TSLP-2

-55°C ~ 125°C

BAS4002LE6327XTMA1

Infineon Technologies

DIODE SCHOTTKY 40V 120MA TSLP-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100ps
Current - Reverse Leakage @ Vr: 1µA @ 30V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2
Operating Temperature - Junction: -55°C ~ 150°C

封裝: SOD-882

庫存3,184

40V

120mA (DC)

1V @ 40mA

Small Signal =< 200mA (Io), Any Speed

100ps

1µA @ 30V

5pF @ 0V, 1MHz

Surface Mount

SOD-882

PG-TSLP-2

-55°C ~ 150°C

BAT54WH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 200MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C (Max)

封裝: SC-70, SOT-323

庫存7,776

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SC-70, SOT-323

PG-SOT323-3

150°C (Max)