頁 11 - Infineon Technologies 產品 - 二極體 - 整流器 - 單 | 黑森爾電子
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Infineon Technologies 產品 - 二極體 - 整流器 - 單

記錄 805
頁  11/29
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SIDC04D60F6X1SA2
Infineon Technologies

DIODE GEN PURP 600V 9A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
9A
1.6 V @ 9 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC04D60F6X1SA4
Infineon Technologies

DIODE GEN PURP 600V 9A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
9A
1.6 V @ 9 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
D970N08TXPSA1
Infineon Technologies

DIODE GEN PURP 800V 970A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 970A
  • Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
800 V
970A
970 mV @ 750 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 800 V
-
Clamp On
DO-200AA, A-PUK
-
-40°C ~ 180°C
D4810N22TVFXPSA1
Infineon Technologies

DIODE GEN PURP 2.2KV 4810A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 4810A
  • Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
庫存6
2200 V
4810A
1.078 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
200 mA @ 2200 V
-
Chassis Mount
DO-200AE
-
-40°C ~ 150°C
D690S26TXPSA1
Infineon Technologies

DIODE GEN PURP 2.6KV 690A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2600 V
  • Current - Average Rectified (Io): 690A
  • Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 9 µs
  • Current - Reverse Leakage @ Vr: 25 mA @ 2600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
2600 V
690A
2.7 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
9 µs
25 mA @ 2600 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 150°C
D1131SH65TXPSA1
Infineon Technologies

DIODE GEN PURP 6.5KV 1100A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6500 V
  • Current - Average Rectified (Io): 1100A
  • Voltage - Forward (Vf) (Max) @ If: 5.6 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 6500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
封裝: -
庫存6
6500 V
1100A
5.6 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 6500 V
-
Chassis Mount
DO-200AE
-
0°C ~ 140°C
D820N24TXPSA1
Infineon Technologies

DIODE GEN PURP 2.4KV 820A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 820A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 750 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
2400 V
820A
1.25 V @ 750 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2400 V
-
Clamp On
DO-200AA, A-PUK
-
-40°C ~ 180°C
IDK12G65C5XTMA2
Infineon Technologies

DIODE SIL CARB 650V 12A TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 360pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存1,584
650 V
12A
1.8 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
-
360pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDT10S60C
Infineon Technologies

DIODE SIL CARB 600V 10A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 140 µA @ 600 V
  • Capacitance @ Vr, F: 480pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
600 V
10A (DC)
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
140 µA @ 600 V
480pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDC73D120T6MX1SA2
Infineon Technologies

DIODE GP 1.2KV 150A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 150 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 26 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
1200 V
150A
2.05 V @ 150 A
Standard Recovery >500ns, > 200mA (Io)
-
26 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
DZ600N14KHPSA1
Infineon Technologies

DIODE GEN PURP 1.4KV 735A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 735A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
1400 V
735A
1.4 V @ 2200 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1400 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
D251N18BB01XPSA1
Infineon Technologies

DIODE GP 1.8KV 255A DSW27-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 255A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: BG-DSW27-1
  • Supplier Device Package: BG-DSW27-1
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
1800 V
255A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1800 V
-
Stud Mount
BG-DSW27-1
BG-DSW27-1
-40°C ~ 180°C
D251K18BXPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 255A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 255A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
1800 V
255A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1800 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 180°C
IDH02G65C5XKSA2
Infineon Technologies

DIODE SIL CARB 650V 2A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 70pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存1,500
650 V
2A
1.7 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
-
70pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
D170S25BS1XPSA1
Infineon Technologies

DIODE GP 2.5KV 255A DSW271-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 255A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 5 mA @ 2500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: Stud
  • Supplier Device Package: BG-DSW271-1
  • Operating Temperature - Junction: 140°C (Max)
封裝: -
Request a Quote
2500 V
255A
2.3 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
4 µs
5 mA @ 2500 V
-
Stud Mount
Stud
BG-DSW271-1
140°C (Max)
D650N08TXPSA1
Infineon Technologies

DIODE GEN PURP 800V 650A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 650A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
800 V
650A
950 mV @ 450 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 800 V
-
Clamp On
DO-200AA, A-PUK
-
-40°C ~ 180°C
AIDK08S65C5ATMA1
Infineon Technologies

DISCRETE DIODES

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 248pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存564
650 V
8A
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
248pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2
-40°C ~ 175°C
GATELEADWHBU445XXPSA1
Infineon Technologies

STD THYR/DIODEN DISC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DZ1070N26KHPSA1
Infineon Technologies

DIODE GP 2.6KV 1070A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2600 V
  • Current - Average Rectified (Io): 1070A
  • Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
2600 V
1070A
1.52 V @ 3400 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 2600 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
IDDD16G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 43A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 43A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 53 µA @ 420 V
  • Capacitance @ Vr, F: 783pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存14,319
650 V
43A
-
No Recovery Time > 500mA (Io)
0 ns
53 µA @ 420 V
783pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
ND104N16KHPSA1
Infineon Technologies

DIODE GEN PURP 1.6KV 104A PB20-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 104A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB20-1
  • Operating Temperature - Junction: -40°C ~ 135°C
封裝: -
Request a Quote
1600 V
104A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
-
Chassis Mount
Module
BG-PB20-1
-40°C ~ 135°C
PX3244HDMG008XTMA1
Infineon Technologies

LED PX3244HDMG008XTMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
IDC75S120C5X7SA1
Infineon Technologies

SIC CHIP

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
IDV03S60C
Infineon Technologies

DIODE SIL CARB 600V 3A TO220-22

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 600 V
  • Capacitance @ Vr, F: 90pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: PG-TO220-2-22
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
600 V
3A (DC)
1.9 V @ 3 A
No Recovery Time > 500mA (Io)
0 ns
30 µA @ 600 V
90pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2-22
-55°C ~ 175°C
SIDC04D60F6X7SA1
Infineon Technologies

DIODE GEN PURP 600V 9A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
Request a Quote
600 V
9A
1.6 V @ 9 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC110D170HX1SA2
Infineon Technologies

DIODE GP 1.7KV 200A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
1700 V
200A
1.8 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1700 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
IDP2321XUMA1
Infineon Technologies

IC AC/DC DGTL PLATFORM 16SOIC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
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IDL12G65C5XUMA2
Infineon Technologies

DIODE SIL CARB 650V 12A VSON-4

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 190 µA @ 650 V
  • Capacitance @ Vr, F: 360pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存45,780
650 V
12A
1.7 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
190 µA @ 650 V
360pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C