頁 78 - IXYS 產品 | 黑森爾電子

零件編號	製造商	描述	封裝	庫存
IXGF36N300	IXYS	IGBT 3000V 36A 160W I4-PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 36A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 100A Power - Max: 160W Switching Energy: - Input Type: Standard Gate Charge: 136nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	封裝: i4-Pac?-5 (3 leads)	庫存4,480
MWI75-12T8T	IXYS	IGBT MOD TRENCH SIX-PACK E3 IGBT Type: Trench Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 110A Power - Max: 360W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 5.35nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	封裝: E3	庫存6,848
MIXA61H1200ED	IXYS	IGBT MODULE 1200V 60A IGBT Type: PT Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Power - Max: 290W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A Current - Collector Cutoff (Max): 500µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	封裝: E2	庫存3,344
IXGN400N60A3	IXYS	IGBT 400A 600V SOT-227B IGBT Type: PT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 400A Power - Max: 830W Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 32nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	封裝: SOT-227-4, miniBLOC	庫存3,440
IXA40PG1200DHGLB-TRR	IXYS	IGBT PHASELEG 1200V 30A SMPD IGBT Type: PT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 63A Power - Max: 230W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A Current - Collector Cutoff (Max): 150µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-SMD Module Supplier Device Package: ISOPLUS-SMPD?.B	封裝: 9-SMD Module	庫存7,664
IXTF03N400	IXYS	MOSFET N-CH 4000V 300MA I4PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4000V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 300 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5 (3 leads)	封裝: i4-Pac?-5 (3 leads)	庫存3,392
IXTB30N100L	IXYS	MOSFET N-CH 1000V 30A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 545nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 800W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	封裝: TO-264-3, TO-264AA	庫存7,872
IXFE48N50QD3	IXYS	MOSFET N-CH 500V 41A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 41A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封裝: SOT-227-4, miniBLOC	庫存7,136
IXTP90N15T	IXYS	MOSFET N-CH 150V 90A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封裝: TO-220-3	庫存7,952
IXTY3N50P	IXYS	MOSFET N-CH 500V 3.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存5,520
IXFN106N20	IXYS	MOSFET N-CH 200V 106A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 106A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封裝: SOT-227-4, miniBLOC	庫存6,684
MCD700-18IO1W	IXYS	SCR THRYRISTOR 1800V WC-500 Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1800V Current - On State (It (AV)) (Max): 700A Current - On State (It (RMS)) (Max): 1331A Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz Current - Hold (Ih) (Max): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: WC-500	封裝: WC-500	庫存2,688
VWO36-08IO7	IXYS	MODULE AC CTLR 3PH 800V ECO-PAC1 Structure: 3-Phase Controller - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 800V Current - On State (It (AV)) (Max): 18A Current - On State (It (RMS)) (Max): 28A Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 65mA Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	封裝: Module	庫存5,200
MCD162-18IO1	IXYS	MOD THYRISTOR/DIODE 1800V Y4-M6 Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1800V Current - On State (It (AV)) (Max): 190A Current - On State (It (RMS)) (Max): 300A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4-M6	封裝: Y4-M6	庫存4,640
MEK600-04DA	IXYS	DIODE MODULE 400V 880A Y4-M6 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 880A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 400A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220ns Current - Reverse Leakage @ Vr: 6mA @ 400V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y4-M6 Supplier Device Package: Y4-M6	封裝: Y4-M6	庫存5,744
DPF60C300HB	IXYS	DIODE ARRAY GP 300V 30A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 1.16V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 5µA @ 300V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	封裝: TO-247-3	庫存2,912
DHG20C600QB	IXYS	DIODE ARRAY GP 600V 10A TO3P Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 2.35V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 15µA @ 600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	封裝: TO-3P-3, SC-65-3	庫存7,664
DPG10P400PJ	IXYS	DIODE ARRAY 400V 10A ISOPLUS220 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 1µA @ 400V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	封裝: ISOPLUS220?	庫存4,816
IXDS502D1B	IXYS	IC GATE LS DRVR SGL 2A 6-DFN Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: - Interface: On/Off Voltage - Load: 4.5 V ~ 25 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Rds On (Typ): 3 Ohm Input Type: Non-Inverting Features: - Fault Protection: - Operating Temperature: -55°C ~ 125°C (TA) Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (4x5)	封裝: 6-VDFN Exposed Pad	庫存6,544
IXBOD2-04	IXYS	BREAKOVER DIODE Voltage - Breakover: 400V Voltage - Off State: - Voltage - On State: - Current - Peak Pulse (8/20µs): - Current - Peak Pulse (10/1000µs): - Current - Hold (Ih): 20mA Number of Elements: 1 Capacitance: - Mounting Type: Through Hole Package / Case: Radial	封裝: Radial	庫存3,186
IXFP18N65X2M	IXYS	MOSFET N-CH 650V 18A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	封裝: -	Request a Quote
IXTP60N28TM-A	IXYS	MOSFET N-CH TO220AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote
M2505MC200	IXYS	DIODE GEN PURP 2KV 2505A W54 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io): 2505A Voltage - Forward (Vf) (Max) @ If: 991 mV @ 2000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.6 µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: W54 Operating Temperature - Junction: -	封裝: -	Request a Quote
N3790TE280	IXYS	SCR 2.8KV 7410A W82 Voltage - Off State: 2.8 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 2.1 V Current - On State (It (AV)) (Max): 3790 A Current - On State (It (RMS)) (Max): 7410 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 55000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W82	封裝: -	Request a Quote
N2418ZD360	IXYS	SCR 3.6KV W46 Voltage - Off State: 3.6 kV Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Voltage - On State (Vtm) (Max): - Current - On State (It (AV)) (Max): 2418 A Current - On State (It (RMS)) (Max): - Current - Hold (Ih) (Max): - Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: - Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W46	封裝: -	Request a Quote
CLA100E1200HB	IXYS	SCR 1.2KV 160A TO247 Voltage - Off State: 1.2 kV Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 40 mA Voltage - On State (Vtm) (Max): 1.37 V Current - On State (It (AV)) (Max): 100 A Current - On State (It (RMS)) (Max): 160 A Current - Hold (Ih) (Max): 100 mA Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	封裝: -	庫存24
IXTA94N20X4	IXYS	MOSFET 200V 94A N-CH ULTRA TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	庫存5,256
W5984TJ360	IXYS	DIODE GEN PURP 3.6KV 5984A W89 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3600 V Current - Average Rectified (Io): 5984A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 47 µs Current - Reverse Leakage @ Vr: 100 mA @ 3600 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: W89 Operating Temperature - Junction: -40°C ~ 160°C	封裝: -	Request a Quote

IXGF36N300

IXYS

IGBT 3000V 36A 160W I4-PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): 400A
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 100A
Power - Max: 160W
Switching Energy: -
Input Type: Standard
Gate Charge: 136nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5 (3 leads)
Supplier Device Package: ISOPLUS i4-PAC?

封裝: i4-Pac?-5 (3 leads)

庫存4,480

MWI75-12T8T

IXYS

IGBT MOD TRENCH SIX-PACK E3

IGBT Type: Trench
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 110A
Power - Max: 360W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 5.35nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3

封裝: E3

庫存6,848

MIXA61H1200ED

IXYS

IGBT MODULE 1200V 60A

IGBT Type: PT
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 85A
Power - Max: 290W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

封裝: E2

庫存3,344

IXGN400N60A3

IXYS

IGBT 400A 600V SOT-227B

IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 400A
Power - Max: 830W
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 32nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

封裝: SOT-227-4, miniBLOC

庫存3,440

IXA40PG1200DHGLB-TRR

IXYS

IGBT PHASELEG 1200V 30A SMPD

IGBT Type: PT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 63A
Power - Max: 230W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
Current - Collector Cutoff (Max): 150µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD?.B

封裝: 9-SMD Module

庫存7,664

IXTF03N400

IXYS

MOSFET N-CH 4000V 300MA I4PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 4000V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 300 Ohm @ 150mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS i4-PAC?
Package / Case: i4-Pac?-5 (3 leads)

封裝: i4-Pac?-5 (3 leads)

庫存3,392

IXTB30N100L

IXYS

MOSFET N-CH 1000V 30A PLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 545nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 800W (Tc)
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS264?
Package / Case: TO-264-3, TO-264AA

封裝: TO-264-3, TO-264AA

庫存7,872

IXFE48N50QD3

IXYS

MOSFET N-CH 500V 41A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 41A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

庫存7,136

IXTP90N15T

IXYS

MOSFET N-CH 150V 90A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存7,952

IXTY3N50P

IXYS

MOSFET N-CH 500V 3.6A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存5,520

IXFN106N20

IXYS

MOSFET N-CH 200V 106A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 106A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

庫存6,684

MCD700-18IO1W

IXYS

SCR THRYRISTOR 1800V WC-500

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1800V
Current - On State (It (AV)) (Max): 700A
Current - On State (It (RMS)) (Max): 1331A
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
Current - Hold (Ih) (Max): -
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: WC-500

封裝: WC-500

庫存2,688

VWO36-08IO7

IXYS

MODULE AC CTLR 3PH 800V ECO-PAC1

Structure: 3-Phase Controller - All SCRs
Number of SCRs, Diodes: 6 SCRs
Voltage - Off State: 800V
Current - On State (It (AV)) (Max): 18A
Current - On State (It (RMS)) (Max): 28A
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 65mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

封裝: Module

庫存5,200

MCD162-18IO1

IXYS

MOD THYRISTOR/DIODE 1800V Y4-M6

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1800V
Current - On State (It (AV)) (Max): 190A
Current - On State (It (RMS)) (Max): 300A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6

封裝: Y4-M6

庫存4,640

MEK600-04DA

IXYS

DIODE MODULE 400V 880A Y4-M6

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 880A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 400A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220ns
Current - Reverse Leakage @ Vr: 6mA @ 400V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Supplier Device Package: Y4-M6

封裝: Y4-M6

庫存5,744

DPF60C300HB

IXYS

DIODE ARRAY GP 300V 30A TO247AD

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 1.16V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

封裝: TO-247-3

庫存2,912

DHG20C600QB

IXYS

DIODE ARRAY GP 600V 10A TO3P

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 2.35V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

封裝: TO-3P-3, SC-65-3

庫存7,664

DPG10P400PJ

IXYS

DIODE ARRAY 400V 10A ISOPLUS220

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?

封裝: ISOPLUS220?

庫存4,816

IXDS502D1B

IXYS

IC GATE LS DRVR SGL 2A 6-DFN

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: -
Interface: On/Off
Voltage - Load: 4.5 V ~ 25 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Rds On (Typ): 3 Ohm
Input Type: Non-Inverting
Features: -
Fault Protection: -
Operating Temperature: -55°C ~ 125°C (TA)
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-DFN (4x5)

封裝: 6-VDFN Exposed Pad

庫存6,544

IXBOD2-04

IXYS

BREAKOVER DIODE

Voltage - Breakover: 400V
Voltage - Off State: -
Voltage - On State: -
Current - Peak Pulse (8/20µs): -
Current - Peak Pulse (10/1000µs): -
Current - Hold (Ih): 20mA
Number of Elements: 1
Capacitance: -
Mounting Type: Through Hole
Package / Case: Radial

封裝: Radial

庫存3,186

IXFP18N65X2M

IXYS

MOSFET N-CH 650V 18A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

封裝: -

Request a Quote

IXTP60N28TM-A

IXYS

MOSFET N-CH TO220AB

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

M2505MC200

IXYS

DIODE GEN PURP 2KV 2505A W54

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Average Rectified (Io): 2505A
Voltage - Forward (Vf) (Max) @ If: 991 mV @ 2000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.6 µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: W54
Operating Temperature - Junction: -

封裝: -

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N3790TE280

IXYS

SCR 2.8KV 7410A W82

Voltage - Off State: 2.8 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 2.1 V
Current - On State (It (AV)) (Max): 3790 A
Current - On State (It (RMS)) (Max): 7410 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 55000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Supplier Device Package: W82

封裝: -

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N2418ZD360

IXYS

SCR 3.6KV W46

Voltage - Off State: 3.6 kV
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Voltage - On State (Vtm) (Max): -
Current - On State (It (AV)) (Max): 2418 A
Current - On State (It (RMS)) (Max): -
Current - Hold (Ih) (Max): -
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Supplier Device Package: W46

封裝: -

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CLA100E1200HB

IXYS

SCR 1.2KV 160A TO247

Voltage - Off State: 1.2 kV
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 40 mA
Voltage - On State (Vtm) (Max): 1.37 V
Current - On State (It (AV)) (Max): 100 A
Current - On State (It (RMS)) (Max): 160 A
Current - Hold (Ih) (Max): 100 mA
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

封裝: -

庫存24

IXTA94N20X4

IXYS

MOSFET 200V 94A N-CH ULTRA TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

庫存5,256

W5984TJ360

IXYS

DIODE GEN PURP 3.6KV 5984A W89

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3600 V
Current - Average Rectified (Io): 5984A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47 µs
Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: W89
Operating Temperature - Junction: -40°C ~ 160°C

封裝: -

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