頁 38 - IXYS 產品 | 黑森爾電子

零件編號	製造商	描述	封裝	庫存
IXGP16N60B2D1	IXYS	IGBT 600V 40A 150W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A Power - Max: 150W Switching Energy: 160µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25°C: 18ns/73ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: TO-220-3	庫存7,120
IXGH60N60B2	IXYS	IGBT 600V 75A 500W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Power - Max: 500W Switching Energy: 1mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 28ns/160ns Test Condition: 400V, 50A, 3.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	封裝: TO-247-3	庫存5,776
IXGH40N60B2D1	IXYS	IGBT 600V 75A 300W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 300W Switching Energy: 400µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 18ns/130ns Test Condition: 400V, 30A, 3.3 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	封裝: TO-247-3	庫存153,540
IXYH30N450HV	IXYS	IGBT 4500V 30A TO-247HV IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 4500V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A Power - Max: 430W Switching Energy: - Input Type: Standard Gate Charge: 88nC Td (on/off) @ 25°C: - Test Condition: 960V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: TO-247HV	封裝: TO-247-3 Variant	庫存5,360
IXGL200N60B3	IXYS	IGBT 600V 150A 400W ISOPLUS264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 600A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A Power - Max: 400W Switching Energy: 1.6mJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 750nC Td (on/off) @ 25°C: 44ns/310ns Test Condition: 300V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS264? Supplier Device Package: ISOPLUS264?	封裝: ISOPLUS264?	庫存7,360
IXXH75N60C3D1	IXYS	IGBT 600V 150A 750W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 750W Switching Energy: 1.6mJ (on), 800µJ (off) Input Type: Standard Gate Charge: 107nC Td (on/off) @ 25°C: 35ns/90ns Test Condition: 400V, 60A, 5 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	封裝: TO-247-3	庫存6,784
MKI65-06A7T	IXYS	IGBT H-BRIDGE 600V E2PACK IGBT Type: - Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	封裝: E2	庫存3,408
MIAA15WB600TMH	IXYS	MODULE IGBT CBI IGBT Type: NPT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Power - Max: 80W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Current - Collector Cutoff (Max): 600µA Input Capacitance (Cies) @ Vce: 0.7nF @ 25V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: MiniPack2 Supplier Device Package: MiniPack2	封裝: MiniPack2	庫存5,408
IXFK100N10	IXYS	MOSFET N-CH 100V 100A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	封裝: TO-264-3, TO-264AA	庫存7,920
IXFP20N85X	IXYS	850V/20A ULTRA JUNCTION X-CLASS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封裝: TO-220-3	庫存4,592
IXFX80N50P	IXYS	MOSFET N-CH 500V 80A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存3,872
IXTT16N20D2	IXYS	MOSFET N-CH 200V 16A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 208nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	庫存6,720
CS8-12IO2	IXYS	SCR PHASE CONTROL 1200V 16A TO64 Voltage - Off State: 1200V Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 30mA Voltage - On State (Vtm) (Max): 1.6V Current - On State (It (AV)) (Max): 16A Current - On State (It (RMS)) (Max): 25A Current - Hold (Ih) (Max): 80mA Current - Off State (Max): 3mA Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 270A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis, Stud Mount Package / Case: TO-208AB, TO-64-3, Stud Supplier Device Package: TO-64	封裝: TO-208AB, TO-64-3, Stud	庫存4,832
MCD250-14IO1	IXYS	MOD THYRISTOR/DIODE 1400V Y2-DCB Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 287A Current - On State (It (RMS)) (Max): 450A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y2-DCB	封裝: Y2-DCB	庫存5,888
VTOF70-16IO7	IXYS	RECT BRIDGE 3PH 1600V FO-T-A Structure: Bridge, 3-Phase - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 70A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A	封裝: FO-T-A	庫存6,176
DSEP8-06A	IXYS	DIODE GEN PURP 600V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 60µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存82,644
HTZ130B28K	IXYS	DIODE MODULE 28KV 1A Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 28000V Current - Average Rectified (Io) (per Diode): 1A Voltage - Forward (Vf) (Max) @ If: 24V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 28000V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: Module	庫存6,112
DSP8-12A	IXYS	DIODE ARRAY GP 1200V 11A TO220AB Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 11A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: TO-220-3	庫存90,636
VBO55-18NO7	IXYS	DIODE BRIDGE 1800V 55A FO-T-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1800V Current - Average Rectified (Io): 55A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Reverse Leakage @ Vr: 500µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A Supplier Device Package: FO-T-A	封裝: FO-T-A	庫存2,384
VUO52-18NO1	IXYS	RECT BRIDGE 3PH 54A 1800V V1-A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1800V Current - Average Rectified (Io): 54A Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A Current - Reverse Leakage @ Vr: 40µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V1-A Supplier Device Package: V1-A	封裝: V1-A	庫存6,192
IXDI409CI	IXYS	IC MOSFET DRVR 9A LOSIDE TO220-5 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 10ns, 10ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Supplier Device Package: TO-220-5	封裝: TO-220-5	庫存17,328
IXBOD1-40R	IXYS	IC DIODE MODULE BOD 0.7A 4000V Voltage - Clamping: 4000V (4kV) Technology: Mixed Technology Number of Circuits: 4 Number of Circuits: 4 Applications: High Voltage Mounting Type: PCB, Through Hole Package / Case: Radial Supplier Device Package: BOD	封裝: Radial	庫存6,930
IXYP10N65B3D1	IXYS	IGBT PT 650V 32A TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 32 A Current - Collector Pulsed (Icm): 62 A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Power - Max: 160 W Switching Energy: 300µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 20 nC Td (on/off) @ 25°C: 17ns/125ns Test Condition: 400V, 10A, 50Ohm, 15V Reverse Recovery Time (trr): 29 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	封裝: -	Request a Quote
IXTP20N65X2	IXYS	MOSFET N-CH 650V 20A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封裝: -	庫存837
IXYK30N170CV1	IXYS	DISC IGBT XPT-HI VOLTAGE TO-264( IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 250 A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A Power - Max: 937 W Switching Energy: 3.6mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 150 nC Td (on/off) @ 25°C: 16ns/143ns Test Condition: 850V, 30A, 2.7Ohm, 15V Reverse Recovery Time (trr): 33 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXYK)	封裝: -	Request a Quote
DSSK18-0025BS-TRL	IXYS	DIODE ARR SCHOTT 25V 10A TO263AA Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 25 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA	封裝: -	Request a Quote
IXTA220N04T2	IXYS	MOSFET N-CH 40V 220A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote
IXFP50N20X3	IXYS	DISCMSFT NCHULTRJNCTX3CLASS TO-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 (IXFP) Package / Case: TO-220-3	封裝: -	Request a Quote

IXGP16N60B2D1

IXYS

IGBT 600V 40A 150W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Power - Max: 150W
Switching Energy: 160µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 24nC
Td (on/off) @ 25°C: 18ns/73ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: TO-220-3

庫存7,120

IXGH60N60B2

IXYS

IGBT 600V 75A 500W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Power - Max: 500W
Switching Energy: 1mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 28ns/160ns
Test Condition: 400V, 50A, 3.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

庫存5,776

IXGH40N60B2D1

IXYS

IGBT 600V 75A 300W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 300W
Switching Energy: 400µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 18ns/130ns
Test Condition: 400V, 30A, 3.3 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

庫存153,540

IXYH30N450HV

IXYS

IGBT 4500V 30A TO-247HV

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 4500V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Power - Max: 430W
Switching Energy: -
Input Type: Standard
Gate Charge: 88nC
Td (on/off) @ 25°C: -
Test Condition: 960V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: TO-247HV

封裝: TO-247-3 Variant

庫存5,360

IXGL200N60B3

IXYS

IGBT 600V 150A 400W ISOPLUS264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 150A
Current - Collector Pulsed (Icm): 600A
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Power - Max: 400W
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Input Type: Standard
Gate Charge: 750nC
Td (on/off) @ 25°C: 44ns/310ns
Test Condition: 300V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS264?
Supplier Device Package: ISOPLUS264?

封裝: ISOPLUS264?

庫存7,360

IXXH75N60C3D1

IXYS

IGBT 600V 150A 750W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 150A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Power - Max: 750W
Switching Energy: 1.6mJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: 107nC
Td (on/off) @ 25°C: 35ns/90ns
Test Condition: 400V, 60A, 5 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

封裝: TO-247-3

庫存6,784

MKI65-06A7T

IXYS

IGBT H-BRIDGE 600V E2PACK

IGBT Type: -
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

封裝: E2

庫存3,408

MIAA15WB600TMH

IXYS

MODULE IGBT CBI

IGBT Type: NPT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Power - Max: 80W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Current - Collector Cutoff (Max): 600µA
Input Capacitance (Cies) @ Vce: 0.7nF @ 25V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: MiniPack2
Supplier Device Package: MiniPack2

封裝: MiniPack2

庫存5,408

IXFK100N10

IXYS

MOSFET N-CH 100V 100A TO-264AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

封裝: TO-264-3, TO-264AA

庫存7,920

IXFP20N85X

IXYS

850V/20A ULTRA JUNCTION X-CLASS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存4,592

IXFX80N50P

IXYS

MOSFET N-CH 500V 80A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存3,872

IXTT16N20D2

IXYS

MOSFET N-CH 200V 16A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 208nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 695W (Tc)
Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

庫存6,720

CS8-12IO2

IXYS

SCR PHASE CONTROL 1200V 16A TO64

Voltage - Off State: 1200V
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 30mA
Voltage - On State (Vtm) (Max): 1.6V
Current - On State (It (AV)) (Max): 16A
Current - On State (It (RMS)) (Max): 25A
Current - Hold (Ih) (Max): 80mA
Current - Off State (Max): 3mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 270A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis, Stud Mount
Package / Case: TO-208AB, TO-64-3, Stud
Supplier Device Package: TO-64

封裝: TO-208AB, TO-64-3, Stud

庫存4,832

MCD250-14IO1

IXYS

MOD THYRISTOR/DIODE 1400V Y2-DCB

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 287A
Current - On State (It (RMS)) (Max): 450A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB

封裝: Y2-DCB

庫存5,888

VTOF70-16IO7

IXYS

RECT BRIDGE 3PH 1600V FO-T-A

Structure: Bridge, 3-Phase - All SCRs
Number of SCRs, Diodes: 6 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 70A
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-T-A

封裝: FO-T-A

庫存6,176

DSEP8-06A

IXYS

DIODE GEN PURP 600V 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 60µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存82,644

HTZ130B28K

IXYS

DIODE MODULE 28KV 1A

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 28000V
Current - Average Rectified (Io) (per Diode): 1A
Voltage - Forward (Vf) (Max) @ If: 24V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 28000V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: Module

庫存6,112

DSP8-12A

IXYS

DIODE ARRAY GP 1200V 11A TO220AB

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 11A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: TO-220-3

庫存90,636

VBO55-18NO7

IXYS

DIODE BRIDGE 1800V 55A FO-T-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1800V
Current - Average Rectified (Io): 55A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-T-A
Supplier Device Package: FO-T-A

封裝: FO-T-A

庫存2,384

VUO52-18NO1

IXYS

RECT BRIDGE 3PH 54A 1800V V1-A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1800V
Current - Average Rectified (Io): 54A
Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A
Current - Reverse Leakage @ Vr: 40µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1-A
Supplier Device Package: V1-A

封裝: V1-A

庫存6,192

IXDI409CI

IXYS

IC MOSFET DRVR 9A LOSIDE TO220-5

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 9A, 9A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 10ns, 10ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Supplier Device Package: TO-220-5

封裝: TO-220-5

庫存17,328

IXBOD1-40R

IXYS

IC DIODE MODULE BOD 0.7A 4000V

Voltage - Clamping: 4000V (4kV)
Technology: Mixed Technology
Number of Circuits: 4
Number of Circuits: 4
Applications: High Voltage
Mounting Type: PCB, Through Hole
Package / Case: Radial
Supplier Device Package: BOD

封裝: Radial

庫存6,930

IXYP10N65B3D1

IXYS

IGBT PT 650V 32A TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 32 A
Current - Collector Pulsed (Icm): 62 A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Power - Max: 160 W
Switching Energy: 300µJ (on), 200µJ (off)
Input Type: Standard
Gate Charge: 20 nC
Td (on/off) @ 25°C: 17ns/125ns
Test Condition: 400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr): 29 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

封裝: -

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IXTP20N65X2

IXYS

MOSFET N-CH 650V 20A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封裝: -

庫存837

IXYK30N170CV1

IXYS

DISC IGBT XPT-HI VOLTAGE TO-264(

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 250 A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A
Power - Max: 937 W
Switching Energy: 3.6mJ (on), 1.8mJ (off)
Input Type: Standard
Gate Charge: 150 nC
Td (on/off) @ 25°C: 16ns/143ns
Test Condition: 850V, 30A, 2.7Ohm, 15V
Reverse Recovery Time (trr): 33 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXYK)

封裝: -

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DSSK18-0025BS-TRL

IXYS

DIODE ARR SCHOTT 25V 10A TO263AA

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25 V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 25 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AA

封裝: -

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IXTA220N04T2

IXYS

MOSFET N-CH 40V 220A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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IXFP50N20X3

IXYS

DISCMSFT NCHULTRJNCTX3CLASS TO-2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3 (IXFP)
Package / Case: TO-220-3

封裝: -

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