頁 165 - IXYS 產品 | 黑森爾電子

零件編號	製造商	描述	封裝	庫存
IXGR12N60C	IXYS	IGBT 600V 15A 55W ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 55W Switching Energy: 90µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 20ns/60ns Test Condition: 480V, 12A, 18 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	封裝: ISOPLUS247?	庫存6,544
IXSA10N60B2D1	IXYS	IGBT 600V 20A 100W TO263 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: 100W Switching Energy: 430µJ (off) Input Type: Standard Gate Charge: 17nC Td (on/off) @ 25°C: 30ns/180ns Test Condition: 480V, 10A, 30 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 AA (IXSA)	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,328
IXYH80N90C3	IXYS	IGBT 900V 165A 830W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 165A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A Power - Max: 830W Switching Energy: 4.3mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 34ns/90ns Test Condition: 450V, 80A, 2 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXYH)	封裝: TO-247-3	庫存3,552
MIXA40WB1200TED	IXYS	IGBT MODULE 1200V 40A IGBT Type: PT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Power - Max: 195W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Current - Collector Cutoff (Max): 2.1mA Input Capacitance (Cies) @ Vce: - Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	封裝: E2	庫存6,368
IXFC26N50	IXYS	MOSFET N-CH 500V 23A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	封裝: ISOPLUS220?	庫存6,832
IXTA80N10T7	IXYS	MOSFET N-CH 100V 80A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	封裝: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	庫存3,312
IXTA160N085T	IXYS	MOSFET N-CH 85V 160A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,488
IXTR32P60P	IXYS	MOSFET P-CH 600V 18A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 385 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	封裝: ISOPLUS247?	庫存3,248
IXFX240N15T2	IXYS	MOSFET N-CH 150V 240A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存3,392
IXTH32P20T	IXYS	MOSFET P-CH 200V 32A TO-247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封裝: TO-247-3	庫存2,288
IXTH300N04T2	IXYS	MOSFET N-CH 40V 300A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封裝: TO-247-3	庫存6,544
IXTQ10P50P	IXYS	MOSFET P-CH 500V 10A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	封裝: TO-3P-3, SC-65-3	庫存7,440
IXTN40P50P	IXYS	MOSFET P-CH 500V 40A SOT227 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封裝: SOT-227-4, miniBLOC	庫存6,208
VCC105-18IO7	IXYS	MOD THYRISTOR 1800V 105A ECOPAC2 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1800V Current - On State (It (AV)) (Max): 105A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2	封裝: ECO-PAC2	庫存6,864
MCD72-14IO8B	IXYS	MOD THYRISTOR/DIO 1400V TO-240AA Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 115A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	封裝: TO-240AA	庫存7,696
MCD26-12IO1B	IXYS	MOD THYRISTOR/DIO 1200V TO-240AA Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 32A Current - On State (It (RMS)) (Max): 50A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	封裝: TO-240AA	庫存4,816
DSI30-12AS-TUB	IXYS	DIODE GEN PURP 1.2KV 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 1200V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,512
VBO65-16NO7	IXYS	DIODE BRIDGE 1600V 65A FO-T-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 65A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A Current - Reverse Leakage @ Vr: 500µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A Supplier Device Package: FO-T-A	封裝: FO-T-A	庫存4,912
VBO88-16NO7	IXYS	DIODE BRIDGE 1600V 95A ECO-PAC2 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 92A Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A Current - Reverse Leakage @ Vr: 500µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	封裝: ECO-PAC2	庫存6,336
M0759YC160	IXYS	DIODE GEN PURP 1.6KV 759A W2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 759A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 50 mA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, A-PUK Supplier Device Package: W2 Operating Temperature - Junction: -40°C ~ 125°C	封裝: -	Request a Quote
IXTH94N20X4	IXYS	MOSFET N-CH 200V 94A X4 TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISO TO-247-3 Package / Case: TO-247-3	封裝: -	庫存1,020
VMO440-02FL-13	IXYS	MOSFET IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote
IXFQ140N20X3	IXYS	MOSFET N-CH 200V 140A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	封裝: -	庫存87
MCNA150PD2200YB	IXYS	BIPOLAR MODULE - THYRISTOR Y4-M Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 2.2 kV Current - On State (It (AV)) (Max): 150 A Current - On State (It (RMS)) (Max): 235 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A Current - Hold (Ih) (Max): 200 mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4-M6	封裝: -	Request a Quote
IXFP8N65X2M	IXYS	MOSFET N-CH 650V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	封裝: -	Request a Quote
IXTA100N04T2-TRL	IXYS	MOSFET N-CH 40V 100A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote
IXTA08N100D2HV	IXYS	MOSFET N-CH 1000V 800MA TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote
IXYH40N120B4H1	IXYS	IGBT TRENCH 1200V 112A TO247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 112 A Current - Collector Pulsed (Icm): 240 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A Power - Max: 600 W Switching Energy: 5.9mJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 94 nC Td (on/off) @ 25°C: 19ns/220ns Test Condition: 960V, 32A, 5Ohm, 15V Reverse Recovery Time (trr): 430 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	封裝: -	庫存840

IXGR12N60C

IXYS

IGBT 600V 15A 55W ISOPLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 48A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 55W
Switching Energy: 90µJ (off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 480V, 12A, 18 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

封裝: ISOPLUS247?

庫存6,544

IXSA10N60B2D1

IXYS

IGBT 600V 20A 100W TO263

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Power - Max: 100W
Switching Energy: 430µJ (off)
Input Type: Standard
Gate Charge: 17nC
Td (on/off) @ 25°C: 30ns/180ns
Test Condition: 480V, 10A, 30 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 AA (IXSA)

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,328

IXYH80N90C3

IXYS

IGBT 900V 165A 830W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 165A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Power - Max: 830W
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 34ns/90ns
Test Condition: 450V, 80A, 2 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXYH)

封裝: TO-247-3

庫存3,552

MIXA40WB1200TED

IXYS

IGBT MODULE 1200V 40A

IGBT Type: PT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Power - Max: 195W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Current - Collector Cutoff (Max): 2.1mA
Input Capacitance (Cies) @ Vce: -
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

封裝: E2

庫存6,368

IXFC26N50

IXYS

MOSFET N-CH 500V 23A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

封裝: ISOPLUS220?

庫存6,832

IXTA80N10T7

IXYS

MOSFET N-CH 100V 80A TO-263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7 (IXTA..7)
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

封裝: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

庫存3,312

IXTA160N085T

IXYS

MOSFET N-CH 85V 160A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,488

IXTR32P60P

IXYS

MOSFET P-CH 600V 18A ISOPLUS247

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 385 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

封裝: ISOPLUS247?

庫存3,248

IXFX240N15T2

IXYS

MOSFET N-CH 150V 240A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存3,392

IXTH32P20T

IXYS

MOSFET P-CH 200V 32A TO-247

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封裝: TO-247-3

庫存2,288

IXTH300N04T2

IXYS

MOSFET N-CH 40V 300A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,544

IXTQ10P50P

IXYS

MOSFET P-CH 500V 10A TO-3P

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

封裝: TO-3P-3, SC-65-3

庫存7,440

IXTN40P50P

IXYS

MOSFET P-CH 500V 40A SOT227

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 40A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封裝: SOT-227-4, miniBLOC

庫存6,208

VCC105-18IO7

IXYS

MOD THYRISTOR 1800V 105A ECOPAC2

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1800V
Current - On State (It (AV)) (Max): 105A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2

封裝: ECO-PAC2

庫存6,864

MCD72-14IO8B

IXYS

MOD THYRISTOR/DIO 1400V TO-240AA

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 115A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

封裝: TO-240AA

庫存7,696

MCD26-12IO1B

IXYS

MOD THYRISTOR/DIO 1200V TO-240AA

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 32A
Current - On State (It (RMS)) (Max): 50A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

封裝: TO-240AA

庫存4,816

DSI30-12AS-TUB

IXYS

DIODE GEN PURP 1.2KV 30A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 1200V
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,512

VBO65-16NO7

IXYS

DIODE BRIDGE 1600V 65A FO-T-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 65A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-T-A
Supplier Device Package: FO-T-A

封裝: FO-T-A

庫存4,912

VBO88-16NO7

IXYS

DIODE BRIDGE 1600V 95A ECO-PAC2

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 92A
Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

封裝: ECO-PAC2

庫存6,336

M0759YC160

IXYS

DIODE GEN PURP 1.6KV 759A W2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 759A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, A-PUK
Supplier Device Package: W2
Operating Temperature - Junction: -40°C ~ 125°C

封裝: -

Request a Quote

IXTH94N20X4

IXYS

MOSFET N-CH 200V 94A X4 TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISO TO-247-3
Package / Case: TO-247-3

封裝: -

庫存1,020

VMO440-02FL-13

IXYS

MOSFET

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

IXFQ140N20X3

IXYS

MOSFET N-CH 200V 140A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

封裝: -

庫存87

MCNA150PD2200YB

IXYS

BIPOLAR MODULE - THYRISTOR Y4-M

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 2.2 kV
Current - On State (It (AV)) (Max): 150 A
Current - On State (It (RMS)) (Max): 235 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6

封裝: -

Request a Quote

IXFP8N65X2M

IXYS

MOSFET N-CH 650V 8A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

封裝: -

Request a Quote

IXTA100N04T2-TRL

IXYS

MOSFET N-CH 40V 100A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

Request a Quote

IXTA08N100D2HV

IXYS

MOSFET N-CH 1000V 800MA TO263HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263HV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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IXYH40N120B4H1

IXYS

IGBT TRENCH 1200V 112A TO247

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 112 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Power - Max: 600 W
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Input Type: Standard
Gate Charge: 94 nC
Td (on/off) @ 25°C: 19ns/220ns
Test Condition: 960V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr): 430 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

封裝: -

庫存840