頁 143 - IXYS 產品 | 黑森爾電子

零件編號	製造商	描述	封裝	庫存
IXGH50N60C4	IXYS	IGBT 600V 90A 300W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A Power - Max: 300W Switching Energy: 950µJ (on), 840µJ (off) Input Type: Standard Gate Charge: 113nC Td (on/off) @ 25°C: 40ns/270ns Test Condition: 400V, 36A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	封裝: TO-247-3	庫存2,224
VDI130-06P1	IXYS	MOD IGBT BUCK 600V ECO-PAC2 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 121A Power - Max: 379W Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 130A Current - Collector Cutoff (Max): 1.2mA Input Capacitance (Cies) @ Vce: 4.2nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	封裝: ECO-PAC2	庫存6,992
MDI150-12A4	IXYS	MOD IGBT BUCK 1200V 180A Y3-DCB IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 180A Power - Max: 760W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A Current - Collector Cutoff (Max): 7.5mA Input Capacitance (Cies) @ Vce: 6.6nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-DCB Supplier Device Package: Y3-DCB	封裝: Y3-DCB	庫存3,952
IXTP102N15T	IXYS	MOSFET N-CH 150V 102A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封裝: TO-220-3	庫存3,200
IXTA200N075T	IXYS	MOSFET N-CH 75V 200A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,824
IXFV14N80P	IXYS	MOSFET N-CH 800V 14A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	封裝: TO-220-3, Short Tab	庫存2,640
IXFR40N90P	IXYS	MOSFET N-CH ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	封裝: ISOPLUS247?	庫存3,552
IXTD5N100A	IXYS	MOSFET N-CH 1000V 5A DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封裝: Die	庫存5,168
IXFP26N50P3	IXYS	MOSFET N-CH 500V 26A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封裝: TO-220-3	庫存4,368
IXTA1N80	IXYS	MOSFET N-CH 800V 750MA TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存4,864
IXFX66N85X	IXYS	850V/66A ULTRA JUNCTION X-CLASS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存6,120
IXFH46N65X2	IXYS	MOSFET N-CH 650V 46A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 76 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	封裝: TO-247-3	庫存7,728
IXTH64N65X	IXYS	MOSFET N-CH 650V 64A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 51 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封裝: TO-247-3	庫存6,032
IXTR16P60P	IXYS	MOSFET P-CH 600V 10A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 790 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	封裝: ISOPLUS247?	庫存7,792
IXTL2N450	IXYS	MOSFET N-CH 4500V 2A I5PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 23 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak? Package / Case: ISOPLUSi5-Pak?	封裝: ISOPLUSi5-Pak?	庫存6,492
VHFD37-12IO1	IXYS	RECT BRIDGE 1PH 1200V V1A-PAK Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1) Number of SCRs, Diodes: 2 SCRs, 4 Diodes Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 36A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 65mA Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: V1A-PAK	封裝: V1A-PAK	庫存3,008
MCMA110PD1200TB	IXYS	MOD THYRISTOR DUAL 12KV TO-240 Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 110A Current - On State (It (RMS)) (Max): 170A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	封裝: TO-240AA	庫存6,976
VCC105-08IO7	IXYS	MOD THYRISTOR 800V 105A ECO-PAC2 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 800V Current - On State (It (AV)) (Max): 105A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2	封裝: ECO-PAC2	庫存2,144
DSI45-12A	IXYS	DIODE GEN PURP 1.2KV 45A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 45A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 1200V Capacitance @ Vr, F: 18pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 175°C	封裝: TO-247-2	庫存3,984
DSEK60-02A	IXYS	DIODE ARRAY GP 200V 34A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 34A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 200µA @ 200V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	封裝: TO-3P-3 Full Pack	庫存126,936
VUO30-08NO3	IXYS	RECT BRIDGE 3PH 37A 800V FO-F-B Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 37A Voltage - Forward (Vf) (Max) @ If: 2.55V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 800V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-F-B Supplier Device Package: FO-F-B	封裝: FO-F-B	庫存5,504
VUO27-12NO7	IXYS	RECT BRIDGE 3PH 28A 1200V SLIM Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 28A Voltage - Forward (Vf) (Max) @ If: 1.12V @ 7A Current - Reverse Leakage @ Vr: 300µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Slim-PAC Supplier Device Package: Slim-PAC	封裝: Slim-PAC	庫存3,520
IXJ611P1	IXYS	IC DRIVER HALF BRIDGE GATE 8DIP Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存2,832
IXD611S7T/R	IXYS	IC DRVR HALF BRIDGE 600MA 14SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 35 V Logic Voltage - VIL, VIH: 2.4V, 2.7V Current - Peak Output (Source, Sink): 600mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 28ns, 18ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	封裝: 14-SOIC (0.154", 3.90mm Width)	庫存7,888
IXTM13N80	IXYS	MOSFET N-CH TO-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote
K0900ME600	IXYS	SCR 6KV 1980A W78 Voltage - Off State: 6 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 2.5 V Current - On State (It (AV)) (Max): 1010 A Current - On State (It (RMS)) (Max): 1980 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: TO-200AC, K-PUK Supplier Device Package: W78	封裝: -	Request a Quote
IXFA7N80P-TRL	IXYS	MOSFET N-CH 800V 7A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote
IXFH28N50F	IXYS	MOSFET N-CH 28A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote

IXGH50N60C4

IXYS

IGBT 600V 90A 300W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 220A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Power - Max: 300W
Switching Energy: 950µJ (on), 840µJ (off)
Input Type: Standard
Gate Charge: 113nC
Td (on/off) @ 25°C: 40ns/270ns
Test Condition: 400V, 36A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

庫存2,224

VDI130-06P1

IXYS

MOD IGBT BUCK 600V ECO-PAC2

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 121A
Power - Max: 379W
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 130A
Current - Collector Cutoff (Max): 1.2mA
Input Capacitance (Cies) @ Vce: 4.2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

封裝: ECO-PAC2

庫存6,992

MDI150-12A4

IXYS

MOD IGBT BUCK 1200V 180A Y3-DCB

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 180A
Power - Max: 760W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Current - Collector Cutoff (Max): 7.5mA
Input Capacitance (Cies) @ Vce: 6.6nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Supplier Device Package: Y3-DCB

封裝: Y3-DCB

庫存3,952

IXTP102N15T

IXYS

MOSFET N-CH 150V 102A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存3,200

IXTA200N075T

IXYS

MOSFET N-CH 75V 200A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,824

IXFV14N80P

IXYS

MOSFET N-CH 800V 14A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

封裝: TO-220-3, Short Tab

庫存2,640

IXFR40N90P

IXYS

MOSFET N-CH ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

封裝: ISOPLUS247?

庫存3,552

IXTD5N100A

IXYS

MOSFET N-CH 1000V 5A DIE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封裝: Die

庫存5,168

IXFP26N50P3

IXYS

MOSFET N-CH 500V 26A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存4,368

IXTA1N80

IXYS

MOSFET N-CH 800V 750MA TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存4,864

IXFX66N85X

IXYS

850V/66A ULTRA JUNCTION X-CLASS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,120

IXFH46N65X2

IXYS

MOSFET N-CH 650V 46A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 660W (Tc)
Rds On (Max) @ Id, Vgs: 76 mOhm @ 23A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封裝: TO-247-3

庫存7,728

IXTH64N65X

IXYS

MOSFET N-CH 650V 64A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 51 mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封裝: TO-247-3

庫存6,032

IXTR16P60P

IXYS

MOSFET P-CH 600V 10A ISOPLUS247

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 790 mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

封裝: ISOPLUS247?

庫存7,792

IXTL2N450

IXYS

MOSFET N-CH 4500V 2A I5PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 4500V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 23 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUSi5-Pak?
Package / Case: ISOPLUSi5-Pak?

封裝: ISOPLUSi5-Pak?

庫存6,492

VHFD37-12IO1

IXYS

RECT BRIDGE 1PH 1200V V1A-PAK

Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
Number of SCRs, Diodes: 2 SCRs, 4 Diodes
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 36A
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 65mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1A-PAK

封裝: V1A-PAK

庫存3,008

MCMA110PD1200TB

IXYS

MOD THYRISTOR DUAL 12KV TO-240

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 110A
Current - On State (It (RMS)) (Max): 170A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

封裝: TO-240AA

庫存6,976

VCC105-08IO7

IXYS

MOD THYRISTOR 800V 105A ECO-PAC2

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 800V
Current - On State (It (AV)) (Max): 105A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2

封裝: ECO-PAC2

庫存2,144

DSI45-12A

IXYS

DIODE GEN PURP 1.2KV 45A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 45A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 45A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 175°C

封裝: TO-247-2

庫存3,984

DSEK60-02A

IXYS

DIODE ARRAY GP 200V 34A TO247AD

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 34A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 200µA @ 200V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD

封裝: TO-3P-3 Full Pack

庫存126,936

VUO30-08NO3

IXYS

RECT BRIDGE 3PH 37A 800V FO-F-B

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 37A
Voltage - Forward (Vf) (Max) @ If: 2.55V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-F-B
Supplier Device Package: FO-F-B

封裝: FO-F-B

庫存5,504

VUO27-12NO7

IXYS

RECT BRIDGE 3PH 28A 1200V SLIM

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 28A
Voltage - Forward (Vf) (Max) @ If: 1.12V @ 7A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Slim-PAC
Supplier Device Package: Slim-PAC

封裝: Slim-PAC

庫存3,520

IXJ611P1

IXYS

IC DRIVER HALF BRIDGE GATE 8DIP

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存2,832

IXD611S7T/R

IXYS

IC DRVR HALF BRIDGE 600MA 14SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 35 V
Logic Voltage - VIL, VIH: 2.4V, 2.7V
Current - Peak Output (Source, Sink): 600mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 28ns, 18ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

封裝: 14-SOIC (0.154", 3.90mm Width)

庫存7,888

IXTM13N80

IXYS

MOSFET N-CH TO-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

K0900ME600

IXYS

SCR 6KV 1980A W78

Voltage - Off State: 6 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1010 A
Current - On State (It (RMS)) (Max): 1980 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC, K-PUK
Supplier Device Package: W78

封裝: -

Request a Quote

IXFA7N80P-TRL

IXYS

MOSFET N-CH 800V 7A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

Request a Quote

IXFH28N50F

IXYS

MOSFET N-CH 28A TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote