頁 62 - ISSI, Integrated Silicon Solution Inc 產品 - 記憶體

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS61LPD102418A-250B3	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.6ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-PBGA (13x15)	封裝: 165-TBGA	庫存6,704	SRAM	SRAM - Quad Port, Synchronous	18Mb (1M x 18)	Parallel	250MHz	-	2.6ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-PBGA (13x15)
IS61LPD102418A-200B3I	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-PBGA (13x15)	封裝: 165-TBGA	庫存5,744	SRAM	SRAM - Quad Port, Synchronous	18Mb (1M x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-PBGA (13x15)
IS61LF51236A-7.5B3I	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封裝: 165-TBGA	庫存3,280	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61LF51236A-7.5B3	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封裝: 165-TBGA	庫存5,296	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61LF51236A-6.5B3I	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封裝: 165-TBGA	庫存4,544	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61LF51236A-6.5B3	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封裝: 165-TBGA	庫存4,400	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61LF102418A-7.5B3I	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封裝: 165-TBGA	庫存3,120	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61LF102418A-6.5B3I	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封裝: 165-TBGA	庫存6,720	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61LF102418A-6.5B3	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	封裝: 165-TBGA	庫存2,416	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS46DR81280C-3DBLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	封裝: 60-TFBGA	庫存6,976	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 105°C	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS46DR81280C-3DBLA1	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	封裝: 60-TFBGA	庫存5,456	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS46DR81280C-25DBLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	封裝: 60-TFBGA	庫存2,848	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 105°C	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS46DR81280C-25DBLA1	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	封裝: 60-TFBGA	庫存2,640	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 85°C	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS46DR81280B-3DBLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	封裝: 60-TFBGA	庫存6,448	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 105°C	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS46DR81280B-3DBLA1	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	封裝: 60-TFBGA	庫存7,296	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS46DR81280B-25DBLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	封裝: 60-TFBGA	庫存4,560	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 105°C	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS46DR81280B-25DBLA1	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	封裝: 60-TFBGA	庫存7,328	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS43TR16128C-107MBLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 195ps Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: 96-TFBGA	庫存5,056	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	933MHz	15ns	195ps	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16128C-107MBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 195ps Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: 96-TFBGA	庫存7,504	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	933MHz	15ns	195ps	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16128B-107MBLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 195ps Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: 96-TFBGA	庫存5,856	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	933MHz	15ns	195ps	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16128B-107MBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 195ps Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: 96-TFBGA	庫存2,832	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	933MHz	15ns	195ps	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43R32800D-5BI	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 144LFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-LFBGA Supplier Device Package: 144-LFBGA (12x12)	封裝: 144-LFBGA	庫存4,656	DRAM	SDRAM - DDR	256Mb (8M x 32)	Parallel	200MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	144-LFBGA	144-LFBGA (12x12)
IS43R32800D-5B	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 144LFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 144-LFBGA Supplier Device Package: 144-LFBGA (12x12)	封裝: 144-LFBGA	庫存4,352	DRAM	SDRAM - DDR	256Mb (8M x 32)	Parallel	200MHz	15ns	700ps	2.3 V ~ 2.7 V	0°C ~ 70°C	Surface Mount	144-LFBGA	144-LFBGA (12x12)
IS43R32400E-4B	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 144LFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: 16ns Access Time: 700ps Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 144-LFBGA Supplier Device Package: 144-LFBGA (12x12)	封裝: 144-LFBGA	庫存6,128	DRAM	SDRAM - DDR	128Mb (4M x 32)	Parallel	250MHz	16ns	700ps	2.4 V ~ 2.6 V	0°C ~ 70°C	Surface Mount	144-LFBGA	144-LFBGA (12x12)
IS43R16320E-6BI	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 60TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512M (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (13x8)	封裝: 60-TFBGA	庫存4,336	DRAM	SDRAM - DDR	512M (32M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C	Surface Mount	60-TFBGA	60-TFBGA (13x8)
IS43R16320D-6BI	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 60TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512M (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (13x8)	封裝: 60-TFBGA	庫存30,000	DRAM	SDRAM - DDR	512M (32M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (13x8)
IS43R16160D-6BI	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 60TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (13x8)	封裝: 60-TFBGA	庫存2,384	DRAM	SDRAM - DDR	256Mb (16M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (13x8)
IS43QR16256A-093PBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 4G PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.066GHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: 96-TFBGA	庫存6,864	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.066GHz	15ns	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)

IS61LPD102418A-250B3

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.6ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-PBGA (13x15)

封裝: 165-TBGA

庫存6,704

SRAM

SRAM - Quad Port, Synchronous

18Mb (1M x 18)

Parallel

250MHz

-

2.6ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-PBGA (13x15)

IS61LPD102418A-200B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-PBGA (13x15)

封裝: 165-TBGA

庫存5,744

SRAM

SRAM - Quad Port, Synchronous

18Mb (1M x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-PBGA (13x15)

IS61LF51236A-7.5B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

庫存3,280

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61LF51236A-7.5B3

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

庫存5,296

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61LF51236A-6.5B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

庫存4,544

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61LF51236A-6.5B3

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

庫存4,400

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61LF102418A-7.5B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

庫存3,120

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61LF102418A-6.5B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

庫存6,720

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61LF102418A-6.5B3

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

庫存2,416

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS46DR81280C-3DBLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

封裝: 60-TFBGA

庫存6,976

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 105°C

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS46DR81280C-3DBLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

封裝: 60-TFBGA

庫存5,456

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS46DR81280C-25DBLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

封裝: 60-TFBGA

庫存2,848

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 105°C

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS46DR81280C-25DBLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

封裝: 60-TFBGA

庫存2,640

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 85°C

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS46DR81280B-3DBLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

封裝: 60-TFBGA

庫存6,448

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 105°C

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS46DR81280B-3DBLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

封裝: 60-TFBGA

庫存7,296

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS46DR81280B-25DBLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

封裝: 60-TFBGA

庫存4,560

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 105°C

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS46DR81280B-25DBLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

封裝: 60-TFBGA

庫存7,328

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS43TR16128C-107MBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 195ps
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

庫存5,056

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

933MHz

15ns

195ps

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16128C-107MBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 195ps
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

庫存7,504

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

933MHz

15ns

195ps

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16128B-107MBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 195ps
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

庫存5,856

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

933MHz

15ns

195ps

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16128B-107MBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 195ps
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

庫存2,832

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

933MHz

15ns

195ps

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43R32800D-5BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 144LFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-LFBGA
Supplier Device Package: 144-LFBGA (12x12)

封裝: 144-LFBGA

庫存4,656

DRAM

SDRAM - DDR

256Mb (8M x 32)

Parallel

200MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

144-LFBGA

144-LFBGA (12x12)

IS43R32800D-5B

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 144LFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 144-LFBGA
Supplier Device Package: 144-LFBGA (12x12)

封裝: 144-LFBGA

庫存4,352

DRAM

SDRAM - DDR

256Mb (8M x 32)

Parallel

200MHz

15ns

700ps

2.3 V ~ 2.7 V

0°C ~ 70°C

Surface Mount

144-LFBGA

144-LFBGA (12x12)

IS43R32400E-4B

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 144LFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: 16ns
Access Time: 700ps
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 144-LFBGA
Supplier Device Package: 144-LFBGA (12x12)

封裝: 144-LFBGA

庫存6,128

DRAM

SDRAM - DDR

128Mb (4M x 32)

Parallel

250MHz

16ns

700ps

2.4 V ~ 2.6 V

0°C ~ 70°C

Surface Mount

144-LFBGA

144-LFBGA (12x12)

IS43R16320E-6BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 60TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512M (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (13x8)

封裝: 60-TFBGA

庫存4,336

DRAM

SDRAM - DDR

512M (32M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C

Surface Mount

60-TFBGA

60-TFBGA (13x8)

IS43R16320D-6BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 60TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512M (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (13x8)

封裝: 60-TFBGA

庫存30,000

DRAM

SDRAM - DDR

512M (32M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (13x8)

IS43R16160D-6BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 60TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (13x8)

封裝: 60-TFBGA

庫存2,384

DRAM

SDRAM - DDR

256Mb (16M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (13x8)

IS43QR16256A-093PBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 4G PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.066GHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

庫存6,864

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.066GHz

15ns

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)