頁 102 - IDT, Integrated Device Technology Inc 產品 - 記憶體

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
71V67603S150PFGI	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存5,792	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
70P249L65BYGI	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 65NS 100FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 65ns Access Time: 65ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-TFBGA Supplier Device Package: 100-CABGA (6x6)	封裝: 100-TFBGA	庫存4,752	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	65ns	65ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	100-TFBGA	100-CABGA (6x6)
71T75902S75PFG8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存6,672	SRAM	SRAM - Synchronous ZBT	18Mb (1M x 18)	Parallel	-	-	7.5ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
70P254L55BYGI	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 55NS 81CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 81-TFBGA Supplier Device Package: 81-CABGA (5x5)	封裝: 81-TFBGA	庫存2,016	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	55ns	55ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	81-TFBGA	81-CABGA (5x5)
70V9079S12PF8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 12NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存6,432	SRAM	SRAM - Dual Port, Synchronous	256Kb (32K x 8)	Parallel	-	-	12ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
709269S12PF8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 12NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存4,048	SRAM	SRAM - Dual Port, Synchronous	256Kb (16K x 16)	Parallel	-	-	12ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
709079S12PF8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 12NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存6,976	SRAM	SRAM - Dual Port, Synchronous	256Kb (32K x 8)	Parallel	-	-	12ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
70V25L55J8	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 55NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	封裝: 84-LCC (J-Lead)	庫存6,640	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	55ns	55ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
7025L55J8	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 55NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	封裝: 84-LCC (J-Lead)	庫存6,224	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
71256S85DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 85NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存3,504	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	85ns	85ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256S70DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 70NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存6,480	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256S55DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 55NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存2,100	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256S45DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 45NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存4,560	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256S35DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 35NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存4,320	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256S25DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 25NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存7,760	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256S100DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 100NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存3,136	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	100ns	100ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256L85DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 85NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存5,088	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	85ns	85ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256L55DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 55NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存5,712	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256L35DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 35NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存3,024	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256L25DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 25NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存2,944	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
71256L100DB	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 100NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存3,040	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	100ns	100ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
5962-8855204XA	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 100NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	封裝: 28-CDIP (0.600", 15.24mm)	庫存7,392	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	-	-	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CerDip
70V24L55PFI	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 55NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP	封裝: 100-LQFP	庫存5,808	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	55ns	55ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP
70914S20J8	IDT, Integrated Device Technology Inc	IC SRAM 36KBIT 20NS 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 36Kb (4K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	封裝: 68-LCC (J-Lead)	庫存5,488	SRAM	SRAM - Dual Port, Synchronous	36Kb (4K x 9)	Parallel	-	-	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
7015L12JG8	IDT, Integrated Device Technology Inc	IC SRAM 72KBIT 12NS 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 72Kb (8K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	封裝: 68-LCC (J-Lead)	庫存6,192	SRAM	SRAM - Dual Port, Asynchronous	72Kb (8K x 9)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
7015L12J8	IDT, Integrated Device Technology Inc	IC SRAM 72KBIT 12NS 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 72Kb (8K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	封裝: 68-LCC (J-Lead)	庫存7,216	SRAM	SRAM - Dual Port, Asynchronous	72Kb (8K x 9)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
70V25S55J8	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 55NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	封裝: 84-LCC (J-Lead)	庫存6,480	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	55ns	55ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
7025S55J8	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 55NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	封裝: 84-LCC (J-Lead)	庫存5,360	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)

71V67603S150PFGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存5,792

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

70P249L65BYGI

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 65NS 100FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 65ns
Access Time: 65ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TFBGA
Supplier Device Package: 100-CABGA (6x6)

封裝: 100-TFBGA

庫存4,752

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

65ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

100-TFBGA

100-CABGA (6x6)

71T75902S75PFG8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存6,672

SRAM

SRAM - Synchronous ZBT

18Mb (1M x 18)

Parallel

-

7.5ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

70P254L55BYGI

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 81CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 81-TFBGA
Supplier Device Package: 81-CABGA (5x5)

封裝: 81-TFBGA

庫存2,016

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

55ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

81-TFBGA

81-CABGA (5x5)

70V9079S12PF8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 12NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存6,432

SRAM

SRAM - Dual Port, Synchronous

256Kb (32K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

709269S12PF8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 12NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存4,048

SRAM

SRAM - Dual Port, Synchronous

256Kb (16K x 16)

Parallel

-

12ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

709079S12PF8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 12NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存6,976

SRAM

SRAM - Dual Port, Synchronous

256Kb (32K x 8)

Parallel

-

12ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

70V25L55J8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

封裝: 84-LCC (J-Lead)

庫存6,640

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

55ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

7025L55J8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

封裝: 84-LCC (J-Lead)

庫存6,224

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

71256S85DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 85NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存3,504

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

85ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256S70DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 70NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存6,480

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256S55DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存2,100

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256S45DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 45NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存4,560

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256S35DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 35NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存4,320

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256S25DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存7,760

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256S100DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 100NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存3,136

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

100ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256L85DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 85NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存5,088

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

85ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256L55DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存5,712

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256L35DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 35NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存3,024

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256L25DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存2,944

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

71256L100DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 100NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存3,040

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

100ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

5962-8855204XA

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 100NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CerDip

封裝: 28-CDIP (0.600", 15.24mm)

庫存7,392

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CerDip

70V24L55PFI

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 55NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP

封裝: 100-LQFP

庫存5,808

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

55ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP

70914S20J8

IDT, Integrated Device Technology Inc

IC SRAM 36KBIT 20NS 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 36Kb (4K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

封裝: 68-LCC (J-Lead)

庫存5,488

SRAM

SRAM - Dual Port, Synchronous

36Kb (4K x 9)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

7015L12JG8

IDT, Integrated Device Technology Inc

IC SRAM 72KBIT 12NS 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 72Kb (8K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

封裝: 68-LCC (J-Lead)

庫存6,192

SRAM

SRAM - Dual Port, Asynchronous

72Kb (8K x 9)

Parallel

-

12ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

7015L12J8

IDT, Integrated Device Technology Inc

IC SRAM 72KBIT 12NS 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 72Kb (8K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

封裝: 68-LCC (J-Lead)

庫存7,216

SRAM

SRAM - Dual Port, Asynchronous

72Kb (8K x 9)

Parallel

-

12ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

70V25S55J8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

封裝: 84-LCC (J-Lead)

庫存6,480

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

55ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

7025S55J8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

封裝: 84-LCC (J-Lead)

庫存5,360

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)