頁 212 - 二極體 - 橋式整流器 | 離散半導體產品 | 黑森爾電子
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二極體 - 橋式整流器

記錄 7,565
頁  212/271
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封裝
庫存
數量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2KBP10M-28E4/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 1KV 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
封裝: 4-SIP, KBPM
庫存3,264
Standard
1000V
2A
1.1V @ 3.14A
5µA @ 1000V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
hot KBU4D
Fairchild/ON Semiconductor

IC BRIDGE RECT 4A 200V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
封裝: 4-SIP, KBU
庫存15,804
Standard
200V
4A
1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
hot W02G
Fairchild/ON Semiconductor

RECT BRIDGE GPP 1.5A 200V WOB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOB
  • Supplier Device Package: WOB
封裝: 4-Circular, WOB
庫存50,604
Standard
200V
1.5A
1V @ 1A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-Circular, WOB
WOB
hot VUO125-16NO7
IXYS

RECT BRIDGE 3PH 1600V PWS-C

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 166A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 50A
  • Current - Reverse Leakage @ Vr: 200µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-C
  • Supplier Device Package: PWS-C
封裝: PWS-C
庫存6,016
Standard
1600V
166A
1.07V @ 50A
200µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-C
PWS-C
GBPC2501W-E4/51
Vishay Semiconductor Diodes Division

DIODE 1PH 25A 100V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
封裝: 4-Square, GBPC-W
庫存5,456
Standard
100V
25A
1.1V @ 12.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
KBPC5008W
GeneSiC Semiconductor

DIODE BRIDGE 800V 50A KBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-W
  • Supplier Device Package: KBPC-W
封裝: 4-Square, KBPC-W
庫存4,128
Standard
800V
50A
1.1V @ 25A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-W
KBPC-W
GBPC3504W T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 35A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
封裝: 4-Square, GBPC-W
庫存7,600
Standard
400V
35A
1.1V @ 17.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
TS25P04G C2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封裝: 4-SIP, TS-6P
庫存4,256
Standard
400V
25A
1.1V @ 25A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBJ20005TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 20A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBJ
封裝: 4-ESIP
庫存3,504
Standard
50V
20A
1.1V @ 20A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBJ
G2SBA60L-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
封裝: 4-SIP, GBL
庫存3,520
Standard
600V
1.5A
1V @ 750mA
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBU602GTB
SMC Diode Solutions

BRIDGE RECT 1PHASE 200V 6A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
封裝: 4-ESIP
庫存5,600
Standard
200V
6A
1.1V @ 6A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
VUM24-05N
IXYS

MOSFET STAGE BOOST 500V V1-B

  • Diode Type: Single Phase (PFC Module)
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 22A
  • Current - Reverse Leakage @ Vr: 1.5mA @ 600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-B
  • Supplier Device Package: V1-B-Pack
封裝: V1-B
庫存4,624
Standard
600V
40A
1.65V @ 22A
1.5mA @ 600V
-40°C ~ 150°C (TJ)
Chassis Mount
V1-B
V1-B-Pack
BHDS2100
Diodes Incorporated

PLANAR SCHOTTKY RECTIFIER HDS T&

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: HDS
封裝: -
Request a Quote
Schottky
100 V
2 A
850 mV @ 2 A
50 µA @ 100 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
HDS
NTE5334
NTE Electronics, Inc

R-SI BRIDGE 1000V 1A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: -
封裝: -
Request a Quote
Standard
1 kV
1 A
1.2 V @ 1 A
10 µA @ 1000 V
-65°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
-
NTE5391
NTE Electronics, Inc

R-SI BRIDGE 400V 35A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: 4-SIP
封裝: -
Request a Quote
Standard
400 V
35 A
1.1 V @ 17.5 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
4-SIP
GBU12G-T
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 8.4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
400 V
8.4 A
1 V @ 12 A
5 µA @ 400 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBJ25MI_T0_00101
Panjit International Inc.

GBJ-1, GENERAL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ-1
封裝: -
庫存2,217
Standard
1 kV
25 A
1 V @ 12.5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ-1
GBJ6M
GeneSiC Semiconductor

1000V 6A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封裝: -
Request a Quote
Standard
1 kV
6 A
1.05 V @ 3 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
TS25PL05G
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 25A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封裝: -
庫存3,435
Standard
600 V
25 A
920 mV @ 12.5 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
MB22S-TP
Micro Commercial Co

BRIDGE RECT 20V 2A MBS-1

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 20 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: MBS-1
封裝: -
Request a Quote
Schottky
20 V
2 A
500 mV @ 2 A
500 µA @ 20 V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
MBS-1
VUO35-16NO1
IXYS

BRIDGE RECT

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 15 A
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-A
  • Supplier Device Package: PWS-A
封裝: -
Request a Quote
Standard
1.6 kV
35 A
1.01 V @ 15 A
40 µA @ 1600 V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-A
PWS-A
KBJL1006G-BP
Micro Commercial Co

DIODE BRIDGE KBJL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJL
  • Supplier Device Package: KBJL
封裝: -
Request a Quote
Standard
600 V
10 A
1.1 V @ 5 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJL
KBJL
LMB32S-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 20 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: LMBS-1
封裝: -
Request a Quote
Schottky
20 V
3 A
550 mV @ 1.5 A
500 µA @ 20 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
LMBS-1
KBJA601-BP
Micro Commercial Co

DIODE BRIDGE 6A JB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JB
  • Supplier Device Package: JB
封裝: -
Request a Quote
Standard
100 V
6 A
1.05 V @ 3 A
10 µA @ 100 V
-55°C ~ 150°C
Through Hole
4-SIP, JB
JB
DF200AA160
SanRex Corporation

6-PK DIODE MODULE 200A/1600V 17M

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 200 A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 200 A
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封裝: -
庫存54
Standard
1.6 kV
200 A
1.35 V @ 200 A
20 mA @ 1600 V
-40°C ~ 150°C
Chassis Mount
Module
-
DB154
SMC Diode Solutions

BRIDGE RECT 1P 400V 1.5A DB-M

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB-M
封裝: -
Request a Quote
Standard
400 V
1.5 A
1.1 V @ 1.5 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB-M
UG2KB80
SMC Diode Solutions

BRIDGE RECT 1PHASE 800V 2A D3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: D3K
封裝: -
Request a Quote
Standard
800 V
2 A
1.1 V @ 2 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
D3K
GBU1504
SMC Diode Solutions

BRIDGE RECT 1PHASE 400V 15A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
400 V
15 A
1.1 V @ 15 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU