頁 142 - 二極體 - 橋式整流器 | 離散半導體產品 | 黑森爾電子
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二極體 - 橋式整流器

記錄 7,565
頁  142/271
圖片
零件編號
製造商
描述
封裝
庫存
數量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MSDM150-18
Microsemi Corporation

MOD BRIDGE 3PH 1800V 150A M3-1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
  • Current - Reverse Leakage @ Vr: 500µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M3-1
  • Supplier Device Package: M3-1
封裝: M3-1
庫存5,312
Standard
1800V
150A
1.4V @ 150A
500µA @ 1800V
-40°C ~ 150°C (TJ)
Chassis Mount
M3-1
M3-1
GBU4A-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 50V GPP GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: 4-SIP, GBU
庫存2,640
Standard
50V
3A
1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
112MT120KB
Vishay Semiconductor Diodes Division

RECT BRIDGE 1200V 110A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 20mA @ 1200V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTK
  • Supplier Device Package: MTK
封裝: MTK
庫存4,944
Standard
1200V
110A
-
20mA @ 1200V
-40°C ~ 125°C (TJ)
Chassis Mount
MTK
MTK
hot GBJ602
Diodes Incorporated

RECT BRIDGE GPP 200V 6A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封裝: 4-SIP, GBJ
庫存19,020
Standard
200V
6A
1V @ 3A
5µA @ 200V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
MB256W
Micro Commercial Co

RECT BRIDGE 25A 600V WIRE LEADS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, MB-35W
  • Supplier Device Package: MB-35W
封裝: 4-Square, MB-35W
庫存4,352
Standard
600V
25A
1.2V @ 12.5A
10µA @ 600V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, MB-35W
MB-35W
APTDF200H120G
Microsemi Corporation

DIODE MODULE FULL BRIDGE SP6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 235A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 200A
  • Current - Reverse Leakage @ Vr: 150µA @ 1200V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封裝: SP6
庫存3,840
Standard
1200V
235A
3V @ 200A
150µA @ 1200V
-40°C ~ 175°C (TJ)
Chassis Mount
SP6
SP6
GBJ3510-F
Diodes Incorporated

BRIDGE RECTIFIER GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封裝: 4-SIP, GBJ
庫存2,512
Standard
1000V
3.6A
1.1V @ 17.5A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
TS8P06G C2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封裝: 4-SIP, TS-6P
庫存4,144
Standard
800V
8A
1.1V @ 8A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
BU1008-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 10A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
封裝: 4-SIP, BU
庫存2,112
Standard
800V
3.2A
1.05V @ 5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
CBR1F-D020
Central Semiconductor Corp

RECT BRIDGE 1A 200V A CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, A Case
  • Supplier Device Package: A Case
封裝: 4-Circular, A Case
庫存16,860
Standard
200V
1A
1.3V @ 1A
10µA @ 200V
-65°C ~ 150°C (TJ)
Through Hole
4-Circular, A Case
A Case
Z4GP210-HF
Comchip Technology

RECT BRIDGE GP 1000V 2A ABSZ4

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: ABS(Z4)
封裝: 4-SMD, No Lead
庫存3,328
Standard
1000V
2A
950mV @ 2A
5µA @ 1000V
-55°C ~ 175°C (TJ)
Surface Mount
4-SMD, No Lead
ABS(Z4)
hot MB6S-E3/80
Vishay Semiconductor Diodes Division

RECT BRIDGE 600V .5A TO269AA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: TO-269AA (MBS)
封裝: TO-269AA, 4-BESOP
庫存4,200,528
Standard
600V
500mA
1V @ 400mA
5µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
TO-269AA (MBS)
hot GBPC2510W
GeneSiC Semiconductor

DIODE BRIDGE 1000V 25A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
封裝: 4-Square, GBPC-W
庫存3,456
Standard
1000V
25A
1.1V @ 12.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
DF06-G
Comchip Technology

RECT BRIDGE GPP 600V 1A DF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: 4-DF
封裝: 4-EDIP (0.321", 8.15mm)
庫存16,584
Standard
600V
1A
1.1V @ 1A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
4-DF
MB10STR
SMC Diode Solutions

BRIDGE RECT 1PHASE 1KV 500MA MBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: MBS
封裝: 4-SMD, Gull Wing
庫存23,268
Standard
1000V
500mA
1.1V @ 800mA
5µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
MBS
VS-GBPC3504A
Vishay Semiconductor Diodes Division

RECT BRIDGE 1-PH 400V 35A GBPC-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 2mA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC-A
  • Supplier Device Package: GBPC-A
封裝: 4-Square, GBPC-A
庫存16,932
Standard
400V
35A
-
2mA @ 400V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC-A
GBPC-A
CBRSDSH2-40 TR13
Central Semiconductor Corp

BRIDGE RECT 2A 40V 4SMDIP

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
  • Current - Reverse Leakage @ Vr: 70µA @ 40V
  • Operating Temperature: -50°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMDIP
封裝: 4-SMD, Gull Wing
庫存26,514
Schottky
40V
2A
450mV @ 2A
70µA @ 40V
-50°C ~ 125°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SMDIP
DBLS156GH
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 800V 1.5A DBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
封裝: -
庫存9,000
Standard
800 V
1.5 A
1.1 V @ 1.5 A
2 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
KBP4005G-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBP
  • Supplier Device Package: GBP
封裝: -
Request a Quote
Standard
50 V
4 A
1.05 V @ 2 A
10 µA @ 50 V
-55°C ~ 150°C
Through Hole
4-SIP, GBP
GBP
GBJ6005-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封裝: -
Request a Quote
Standard
50 V
6 A
1 V @ 3 A
5 µA @ 50 V
-55°C ~ 150°C
Through Hole
4-SIP, GBJ
GBJ
UC1610J
Texas Instruments

BRIDGE RECTIFIER DIODE, SCHOTTKY

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
GBJ2506ULV_T0_00601
Panjit International Inc.

ULTRA LOW VF BRIDGE RECTIFIER WI

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ-2
封裝: -
Request a Quote
Standard
600 V
25 A
920 mV @ 12.5 A
1 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ-2
GBU6ML-7001M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3.8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 3.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封裝: -
Request a Quote
Standard
1 kV
3.8 A
1 V @ 6 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBJ5010_HF
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBJ TUB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封裝: -
Request a Quote
Standard
1 kV
50 A
1.1 V @ 25 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
SM320A
JATTA

BRIDGE RECT 1P 600V 3.0A DO-214A

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
RBV800
EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 8A 50V, CASE TY

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RBV-25
  • Supplier Device Package: RBV-25
封裝: -
Request a Quote
Standard
50 V
8 A
1 V @ 4 A
10 µA @ 50 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, RBV-25
RBV-25
TS35P06G
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 800V 35A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封裝: -
庫存3,600
Standard
800 V
35 A
1.1 V @ 17.5 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
DB202L-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DBL-1
封裝: -
Request a Quote
Standard
100 V
2 A
1.1 V @ 2 A
10 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DBL-1