電晶體 - IGBT - 單

STGB6NC60HD-1

STMicroelectronics

IGBT 600V 15A 56W I2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 21A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
• Power - Max: 56W
• Switching Energy: 20µJ (on), 68µJ (off)
• Input Type: Standard
• Gate Charge: 13.6nC
• Td (on/off) @ 25°C: 12ns/76ns
• Test Condition: 390V, 3A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 21ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: I2PAK

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

IXSH10N60B2D1

IXYS

IGBT 600V 20A 100W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: 100W
• Switching Energy: 430µJ (off)
• Input Type: Standard
• Gate Charge: 17nC
• Td (on/off) @ 25°C: 30ns/180ns
• Test Condition: 480V, 10A, 30 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

封裝: TO-247-3

FGB30N6S2D

Fairchild/ON Semiconductor

IGBT 600V 45A 167W TO263AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): 108A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
• Power - Max: 167W
• Switching Energy: 55µJ (on), 100µJ (off)
• Input Type: Standard
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 6ns/40ns
• Test Condition: 390V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 46ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IGA03N120H2XKSA1

Infineon Technologies

IGBT 1200V 3A 29W TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 3A
• Current - Collector Pulsed (Icm): 9A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 29W
• Switching Energy: 290µJ
• Input Type: Standard
• Gate Charge: 8.6nC
• Td (on/off) @ 25°C: 9.2ns/281ns
• Test Condition: 800V, 3A, 82 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: PG-TO220-3

封裝: TO-220-3 Full Pack

IXGX50N120C3H1

IXYS

IGBT 1200V 95A 460W PLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 95A
• Current - Collector Pulsed (Icm): 240A
• Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
• Power - Max: 460W
• Switching Energy: 2mJ (on), 630µJ (off)
• Input Type: Standard
• Gate Charge: 196nC
• Td (on/off) @ 25°C: 31ns/123ns
• Test Condition: 600V, 40A, 2 Ohm, 15V
• Reverse Recovery Time (trr): 75ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

封裝: TO-247-3

FID60-06D

IXYS

IGBT 600V 65A 200W I4PAC5

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 65A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 200W
• Switching Energy: 1mJ (on), 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: -
• Test Condition: 300V, 30A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 70ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

封裝: i4-Pac?-5

IXGH40N120C3D1

IXYS

IGBT 1200V 75A 380W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
• Power - Max: 380W
• Switching Energy: 1.8mJ (on), 550µJ (off)
• Input Type: Standard
• Gate Charge: 142nC
• Td (on/off) @ 25°C: 17ns/130ns
• Test Condition: 600V, 30A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

IXGH16N170A

IXYS

IGBT 1700V 16A 190W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
• Power - Max: 190W
• Switching Energy: 900µJ (off)
• Input Type: Standard
• Gate Charge: 65nC
• Td (on/off) @ 25°C: 36ns/160ns
• Test Condition: 850V, 16A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

IXGX40N120BD1

IXYS

IGBT 1200V PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

封裝: ISOPLUS247?

NGB8202ANT4G

Littelfuse Inc.

IGBT 440V 20A 150W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 440V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -/5µs
• Test Condition: 300V, 9A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGP19NC60KD

STMicroelectronics

IGBT 600V 35A 125W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
• Power - Max: 125W
• Switching Energy: 165µJ (on), 255µJ (off)
• Input Type: Standard
• Gate Charge: 55nC
• Td (on/off) @ 25°C: 30ns/105ns
• Test Condition: 480V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 31ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封裝: TO-220-3

AOK20B120E1

Alpha & Omega Semiconductor Inc.

IGBT 1200V 20A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 333W
• Switching Energy: 830µJ (off)
• Input Type: Standard
• Gate Charge: 60.5nC
• Td (on/off) @ 25°C: -/134ns
• Test Condition: 600V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封裝: TO-247-3

NGTB40N120FL2WG

ON Semiconductor

IGBT 1200V 80A 535W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
• Power - Max: 535W
• Switching Energy: 3.4mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 313nC
• Td (on/off) @ 25°C: 116ns/286ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 240ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封裝: TO-247-3

STGW60H60DLFB

STMicroelectronics

IGBT 600V 80A 375W TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 240A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
• Power - Max: 375W
• Switching Energy: 626µJ (off)
• Input Type: Standard
• Gate Charge: 306nC
• Td (on/off) @ 25°C: -/160ns
• Test Condition: 400V, 60A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封裝: TO-247-3

IGW40N65F5FKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 255W
• Switching Energy: 360µJ (on), 100µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 19ns/160ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: TO-247-3

HGT1S12N60B3S

Harris Corporation

IGBT 600V 27A TO263

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 27 A
• Current - Collector Pulsed (Icm): 110 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 104 W
• Switching Energy: 304µJ (on), 250µJ (off)
• Input Type: Standard
• Gate Charge: 68 nC
• Td (on/off) @ 25°C: 26ns/150ns
• Test Condition: 480V, 12A, 25Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

封裝: -

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SIGC12T60SNCX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 29ns/266ns
• Test Condition: 400V, 10A, 25Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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IXBH42N300HV

IXYS

DISC IGBT BIMSFT-VERYHIVOLT TO-2

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000 V
• Current - Collector (Ic) (Max): 104 A
• Current - Collector Pulsed (Icm): 400 A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
• Power - Max: 500 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 200 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.7 µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: TO-247HV

封裝: -

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IXYH50N170C

IXYS

IGBT 1700V 178A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 178 A
• Current - Collector Pulsed (Icm): 460 A
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
• Power - Max: 1500 W
• Switching Energy: 8.7mJ (on), 5.6mJ (off)
• Input Type: Standard
• Gate Charge: 260 nC
• Td (on/off) @ 25°C: 20ns/180ns
• Test Condition: 850V, 50A, 1Ohm, 15V
• Reverse Recovery Time (trr): 44 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

封裝: -

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RGW40TS65DGC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 40A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
• Power - Max: 136 W
• Switching Energy: 330µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 59 nC
• Td (on/off) @ 25°C: 33ns/76ns
• Test Condition: 400V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: -

SIGC25T60UNX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 16ns/122ns
• Test Condition: 400V, 30A, 1.8Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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RGWX5TS65DHRC11

Rohm Semiconductor

IGBT TRENCH FLD 650V 132A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 132 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
• Power - Max: 348 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 213 nC
• Td (on/off) @ 25°C: 62ns/237ns
• Test Condition: 400V, 37.5A, 10Ohm, 15V
• Reverse Recovery Time (trr): 92 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: -

IKZA40N120CS7XKSA1

Infineon Technologies

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

RGW40TK65GVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 27A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 27 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
• Power - Max: 61 W
• Switching Energy: 330µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 59 nC
• Td (on/off) @ 25°C: 33ns/76ns
• Test Condition: 400V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

封裝: -

FGH75T65UPD-F155

onsemi

650V,75A FIELD STOP TRENCH IGBT

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): 225 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
• Power - Max: 375 W
• Switching Energy: 3.68mJ (on), 1.6mJ (off)
• Input Type: Standard
• Gate Charge: 68 nC
• Td (on/off) @ 25°C: 42ns/216ns
• Test Condition: 400V, 75A, 3Ohm, 15V
• Reverse Recovery Time (trr): 85 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封裝: -

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IKW50N65ET7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 50A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
• Power - Max: 273 W
• Switching Energy: 1.2mJ (on), 850µJ (off)
• Input Type: Standard
• Gate Charge: 290 nC
• Td (on/off) @ 25°C: 26ns/350ns
• Test Condition: 400V, 50A, 9Ohm, 15V
• Reverse Recovery Time (trr): 93 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: -

IKW75N120CH7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 92A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 92 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
• Power - Max: 549 W
• Switching Energy: 4.22mJ (on), 1.66mJ (off)
• Input Type: Standard
• Gate Charge: 535 nC
• Td (on/off) @ 25°C: 55ns/461ns
• Test Condition: -
• Reverse Recovery Time (trr): 145 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-U06

封裝: -

HGTG15N120C3

Harris Corporation

35A, 1200V, N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 35 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
• Power - Max: 164 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 100 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封裝: -

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