頁 62 - 電晶體 - IGBT - 單 | 離散半導體產品

IRG7PK42UD1-EPBF

Infineon Technologies

IGBT 1200V ULTRA FAST TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,696

-

IHY20N120R3XKSA1

Infineon Technologies

IGBT 1200V 40A 310W TO247HC-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Power - Max: 310W
Switching Energy: 950µJ (off)
Input Type: Standard
Gate Charge: 211nC
Td (on/off) @ 25°C: -/387ns
Test Condition: 600V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PG-TO247HC-3

封裝: TO-247-3 Variant

庫存3,504

1200V

40A

60A

1.7V @ 15V, 20A

310W

950µJ (off)

Standard

211nC

-/387ns

600V, 20A, 15 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3 Variant

PG-TO247HC-3

IRG4IBC20W

Infineon Technologies

IGBT 600V 11.8A 34W TO220FP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 11.8A
Current - Collector Pulsed (Icm): 52A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Power - Max: 34W
Switching Energy: 60µJ (on), 80µJ (off)
Input Type: Standard
Gate Charge: 26nC
Td (on/off) @ 25°C: 22ns/110ns
Test Condition: 480V, 6.5A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak

封裝: TO-220-3 Full Pack

庫存134,724

600V

11.8A

52A

2.6V @ 15V, 6.5A

34W

60µJ (on), 80µJ (off)

Standard

26nC

22ns/110ns

480V, 6.5A, 50 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220AB Full-Pak

RJH1CF5RDPQ-80#T2

Renesas Electronics America

IGBT 1200V 50A 192.3W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Power - Max: 192.3W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: TO-247-3

庫存2,880

1200V

50A

-

2.4V @ 15V, 25A

192.3W

-

Standard

-

150°C (TJ)

Through Hole

TO-247-3

TO-247

IXGP30N60B4D1

IXYS

IGBT 600V 56A 190W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 56A
Current - Collector Pulsed (Icm): 156A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Power - Max: 190W
Switching Energy: 440µJ (on), 700µJ (off)
Input Type: Standard
Gate Charge: 77nC
Td (on/off) @ 25°C: 21ns/200ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: TO-220-3

庫存5,120

600V

56A

156A

1.7V @ 15V, 24A

190W

440µJ (on), 700µJ (off)

Standard

77nC

21ns/200ns

400V, 24A, 10 Ohm, 15V

30ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IXGH40N60A

IXYS

IGBT 600V 75A 250W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Power - Max: 250W
Switching Energy: 3mJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

庫存2,400

600V

75A

150A

3V @ 15V, 40A

250W

3mJ (off)

Standard

200nC

100ns/600ns

480V, 40A, 22 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

FGP5N60UFDTU

Fairchild/ON Semiconductor

IGBT 600V 10A 81W TO220

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 15A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A
Power - Max: 81W
Switching Energy: 75µJ (on), 59µJ (off)
Input Type: Standard
Gate Charge: 19.5nC
Td (on/off) @ 25°C: 6ns/44ns
Test Condition: 400V, 5A, 20 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

封裝: TO-220-3

庫存2,592

600V

10A

15A

2.4V @ 15V, 5A

81W

75µJ (on), 59µJ (off)

Standard

19.5nC

6ns/44ns

400V, 5A, 20 Ohm, 15V

30ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

IXGK120N60C2

IXYS

IGBT 600V 75A 830W TO264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 500A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Power - Max: 830W
Switching Energy: 1.7mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 370nC
Td (on/off) @ 25°C: 40ns/120ns
Test Condition: 400V, 80A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXGK)

封裝: TO-264-3, TO-264AA

庫存3,552

600V

75A

500A

2.5V @ 15V, 100A

830W

1.7mJ (on), 1mJ (off)

Standard

370nC

40ns/120ns

400V, 80A, 1 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264 (IXGK)

IXGC16N60B2

IXYS

IGBT 600V 28A 63W ISOPLUS220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
Power - Max: 63W
Switching Energy: 150mJ (off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 25ns/70ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?

封裝: ISOPLUS220?

庫存2,784

600V

28A

100A

2.3V @ 15V, 12A

63W

150mJ (off)

Standard

32nC

25ns/70ns

400V, 12A, 22 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS220?

IXSP20N60B2D1

IXYS

IGBT 600V 35A 190W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 35A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Power - Max: 190W
Switching Energy: 380µJ (off)
Input Type: Standard
Gate Charge: 33nC
Td (on/off) @ 25°C: 30ns/116ns
Test Condition: 480V, 16A, 10 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: TO-220-3

庫存2,816

600V

35A

60A

2.5V @ 15V, 16A

190W

380µJ (off)

Standard

33nC

30ns/116ns

480V, 16A, 10 Ohm, 15V

30ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IKA15N65ET6XKSA1

Infineon Technologies

IGBT 650V 15A TO220-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,288

-

IXXH150N60C3

IXYS

IGBT 600V TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 300A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Power - Max: 1360W
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 75A, 2 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

封裝: TO-247-3

庫存6,208

600V

300A

150A

2.5V @ 15V, 150A

1360W

3.4mJ (on), 1.8mJ (off)

Standard

200nC

34ns/120ns

400V, 75A, 2 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AD

NGTD30T120F2WP

ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存3,552

1200V

-

200A

2.4V @ 15V, 40A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTD28T65F2SWK

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存6,352

650V

-

200A

2V @ 15V, 75A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

IXGP12N100

IXYS

IGBT 1000V 24A 100W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 48A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Power - Max: 100W
Switching Energy: 2.5mJ (off)
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 100ns/850ns
Test Condition: 800V, 12A, 120 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: TO-220-3

庫存6,336

1000V

24A

48A

3.5V @ 15V, 12A

100W

2.5mJ (off)

Standard

65nC

100ns/850ns

800V, 12A, 120 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

STGW60H65F

STMicroelectronics

IGBT 650V 120A 360W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Power - Max: 360W
Switching Energy: 750µJ (on), 1.05mJ (off)
Input Type: Standard
Gate Charge: 217nC
Td (on/off) @ 25°C: 65ns/180ns
Test Condition: 400V, 60A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: TO-247-3

庫存6,624

650V

120A

240A

1.9V @ 15V, 60A

360W

750µJ (on), 1.05mJ (off)

Standard

217nC

65ns/180ns

400V, 60A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

NGTB40N120SWG

ON Semiconductor

IGBT 40A 1200V TO-247

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 535W
Switching Energy: 3.4mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 313nC
Td (on/off) @ 25°C: 116ns/286ns
Test Condition: 600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 240ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: TO-247-3

庫存7,888

1200V

80A

200A

2.4V @ 15V, 40A

535W

3.4mJ (on), 1.1mJ (off)

Standard

313nC

116ns/286ns

600V, 40A, 10 Ohm, 15V

240ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

RGT30NL65DGTL

Rohm Semiconductor

IGBT TRENCH FIELD 650V 30A LPDS

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Power - Max: 133 W
Switching Energy: -
Input Type: Standard
Gate Charge: 32 nC
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): 55 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS

封裝: -

Request a Quote

650 V

30 A

45 A

2.1V @ 15V, 15A

133 W

-

Standard

32 nC

18ns/64ns

400V, 15A, 10Ohm, 15V

55 ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

LPDS

SIGC156T60NR2CX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 200 A
Current - Collector Pulsed (Icm): 600 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 180ns/285ns
Test Condition: 300V, 200A, 1.5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

600 V

200 A

600 A

2.5V @ 15V, 200A

-

Standard

-

180ns/285ns

300V, 200A, 1.5Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC57T120R3LEX1SA3

Infineon Technologies

IGBT 1200V 50A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

1200 V

-

150 A

2.1V @ 15V, 50A

-

Standard

-

Surface Mount

Die

RJP3045DPP-B1-T2F

Renesas Electronics Corporation

HIGH SPEED IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

IGTM10N40A

Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA
Supplier Device Package: TO-3

封裝: -

Request a Quote

400 V

10 A

-

Standard

-

Through Hole

TO-204AA

TO-3

HGTG27N60C3DR

Harris Corporation

UFS SERIES N-CHANNEL IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 54 A
Current - Collector Pulsed (Icm): 108 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 27A
Power - Max: 208 W
Switching Energy: -
Input Type: Standard
Gate Charge: 212 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: -

Request a Quote

600 V

54 A

108 A

2.2V @ 15V, 27A

208 W

-

Standard

212 nC

-

-40°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

IKW75N65ET7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Power - Max: 333 W
Switching Energy: 2.17mJ (on), 1.23mJ (off)
Input Type: Standard
Gate Charge: 435 nC
Td (on/off) @ 25°C: 28ns/310ns
Test Condition: 400V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 100 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封裝: -

庫存1,362

650 V

80 A

225 A

1.65V @ 15V, 75A

333 W

2.17mJ (on), 1.23mJ (off)

Standard

435 nC

28ns/310ns

400V, 75A, 4.7Ohm, 15V

100 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

SIGC25T60SNCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 44ns/324ns
Test Condition: 400V, 30A, 11Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

600 V

30 A

90 A

2.5V @ 15V, 30A

-

Standard

-

44ns/324ns

400V, 30A, 11Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

AOT10B60M1

Alpha & Omega Semiconductor Inc.

IGBT 10A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 25 A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 10A
Power - Max: 83 W
Switching Energy: 190µJ (on), 140µJ (off)
Input Type: Standard
Gate Charge: 14 nC
Td (on/off) @ 25°C: 5.5ns/61ns
Test Condition: 400V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

封裝: -

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600 V

20 A

25 A

2.9V @ 15V, 10A

83 W

190µJ (on), 140µJ (off)

Standard

14 nC

5.5ns/61ns

400V, 10A, 30Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220

SIGC28T60EX1SA4

Infineon Technologies

IGBT TRENCH FS 600V 50A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

600 V

50 A

150 A

1.85V @ 15V, 50A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

IXYH55N120C4H1

IXYS

IGBT TRENCH 1200V 126A TO247

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 126 A
Current - Collector Pulsed (Icm): 290 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Power - Max: 650 W
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Input Type: Standard
Gate Charge: 114 nC
Td (on/off) @ 25°C: 20ns/180ns
Test Condition: 600V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr): 180 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

封裝: -

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1200 V

126 A

290 A

2.5V @ 15V, 55A

650 W

3.5mJ (on), 1.34mJ (off)

Standard

114 nC

20ns/180ns

600V, 40A, 5Ohm, 15V

180 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247 (IXTH)

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7PK42UD1-EPBF	Infineon Technologies	IGBT 1200V ULTRA FAST TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,696	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IHY20N120R3XKSA1	Infineon Technologies	IGBT 1200V 40A 310W TO247HC-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Power - Max: 310W Switching Energy: 950µJ (off) Input Type: Standard Gate Charge: 211nC Td (on/off) @ 25°C: -/387ns Test Condition: 600V, 20A, 15 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PG-TO247HC-3	封裝: TO-247-3 Variant	庫存3,504	1200V	40A	60A	1.7V @ 15V, 20A	310W	950µJ (off)	Standard	211nC	-/387ns	600V, 20A, 15 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3 Variant	PG-TO247HC-3
IRG4IBC20W	Infineon Technologies	IGBT 600V 11.8A 34W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11.8A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A Power - Max: 34W Switching Energy: 60µJ (on), 80µJ (off) Input Type: Standard Gate Charge: 26nC Td (on/off) @ 25°C: 22ns/110ns Test Condition: 480V, 6.5A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	封裝: TO-220-3 Full Pack	庫存134,724	600V	11.8A	52A	2.6V @ 15V, 6.5A	34W	60µJ (on), 80µJ (off)	Standard	26nC	22ns/110ns	480V, 6.5A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
RJH1CF5RDPQ-80#T2	Renesas Electronics America	IGBT 1200V 50A 192.3W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 192.3W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存2,880	1200V	50A	-	2.4V @ 15V, 25A	192.3W	-	Standard	-	-	-	-	150°C (TJ)	Through Hole	TO-247-3	TO-247
IXGP30N60B4D1	IXYS	IGBT 600V 56A 190W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 156A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A Power - Max: 190W Switching Energy: 440µJ (on), 700µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: TO-220-3	庫存5,120	600V	56A	156A	1.7V @ 15V, 24A	190W	440µJ (on), 700µJ (off)	Standard	77nC	21ns/200ns	400V, 24A, 10 Ohm, 15V	30ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGH40N60A	IXYS	IGBT 600V 75A 250W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A Power - Max: 250W Switching Energy: 3mJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 100ns/600ns Test Condition: 480V, 40A, 22 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	封裝: TO-247-3	庫存2,400	600V	75A	150A	3V @ 15V, 40A	250W	3mJ (off)	Standard	200nC	100ns/600ns	480V, 40A, 22 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
FGP5N60UFDTU	Fairchild/ON Semiconductor	IGBT 600V 10A 81W TO220 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A Power - Max: 81W Switching Energy: 75µJ (on), 59µJ (off) Input Type: Standard Gate Charge: 19.5nC Td (on/off) @ 25°C: 6ns/44ns Test Condition: 400V, 5A, 20 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	封裝: TO-220-3	庫存2,592	600V	10A	15A	2.4V @ 15V, 5A	81W	75µJ (on), 59µJ (off)	Standard	19.5nC	6ns/44ns	400V, 5A, 20 Ohm, 15V	30ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXGK120N60C2	IXYS	IGBT 600V 75A 830W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 500A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: 830W Switching Energy: 1.7mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 370nC Td (on/off) @ 25°C: 40ns/120ns Test Condition: 400V, 80A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXGK)	封裝: TO-264-3, TO-264AA	庫存3,552	600V	75A	500A	2.5V @ 15V, 100A	830W	1.7mJ (on), 1mJ (off)	Standard	370nC	40ns/120ns	400V, 80A, 1 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXGK)
IXGC16N60B2	IXYS	IGBT 600V 28A 63W ISOPLUS220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A Power - Max: 63W Switching Energy: 150mJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 25ns/70ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	封裝: ISOPLUS220?	庫存2,784	600V	28A	100A	2.3V @ 15V, 12A	63W	150mJ (off)	Standard	32nC	25ns/70ns	400V, 12A, 22 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXSP20N60B2D1	IXYS	IGBT 600V 35A 190W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A Power - Max: 190W Switching Energy: 380µJ (off) Input Type: Standard Gate Charge: 33nC Td (on/off) @ 25°C: 30ns/116ns Test Condition: 480V, 16A, 10 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: TO-220-3	庫存2,816	600V	35A	60A	2.5V @ 15V, 16A	190W	380µJ (off)	Standard	33nC	30ns/116ns	480V, 16A, 10 Ohm, 15V	30ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IKA15N65ET6XKSA1	Infineon Technologies	IGBT 650V 15A TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,288	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXXH150N60C3	IXYS	IGBT 600V TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 300A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A Power - Max: 1360W Switching Energy: 3.4mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 34ns/120ns Test Condition: 400V, 75A, 2 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	封裝: TO-247-3	庫存6,208	600V	300A	150A	2.5V @ 15V, 150A	1360W	3.4mJ (on), 1.8mJ (off)	Standard	200nC	34ns/120ns	400V, 75A, 2 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
NGTD30T120F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 1200V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存3,552	1200V	-	200A	2.4V @ 15V, 40A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTD28T65F2SWK	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存6,352	650V	-	200A	2V @ 15V, 75A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
IXGP12N100	IXYS	IGBT 1000V 24A 100W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A Power - Max: 100W Switching Energy: 2.5mJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 100ns/850ns Test Condition: 800V, 12A, 120 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: TO-220-3	庫存6,336	1000V	24A	48A	3.5V @ 15V, 12A	100W	2.5mJ (off)	Standard	65nC	100ns/850ns	800V, 12A, 120 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
STGW60H65F	STMicroelectronics	IGBT 650V 120A 360W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A Power - Max: 360W Switching Energy: 750µJ (on), 1.05mJ (off) Input Type: Standard Gate Charge: 217nC Td (on/off) @ 25°C: 65ns/180ns Test Condition: 400V, 60A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存6,624	650V	120A	240A	1.9V @ 15V, 60A	360W	750µJ (on), 1.05mJ (off)	Standard	217nC	65ns/180ns	400V, 60A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB40N120SWG	ON Semiconductor	IGBT 40A 1200V TO-247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 535W Switching Energy: 3.4mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 116ns/286ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 240ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: TO-247-3	庫存7,888	1200V	80A	200A	2.4V @ 15V, 40A	535W	3.4mJ (on), 1.1mJ (off)	Standard	313nC	116ns/286ns	600V, 40A, 10 Ohm, 15V	240ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
RGT30NL65DGTL	Rohm Semiconductor	IGBT TRENCH FIELD 650V 30A LPDS IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 133 W Switching Energy: - Input Type: Standard Gate Charge: 32 nC Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 55 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS	封裝: -	Request a Quote	650 V	30 A	45 A	2.1V @ 15V, 15A	133 W	-	Standard	32 nC	18ns/64ns	400V, 15A, 10Ohm, 15V	55 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPDS
SIGC156T60NR2CX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 200 A Current - Collector Pulsed (Icm): 600 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 180ns/285ns Test Condition: 300V, 200A, 1.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	600 V	200 A	600 A	2.5V @ 15V, 200A	-	-	Standard	-	180ns/285ns	300V, 200A, 1.5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC57T120R3LEX1SA3	Infineon Technologies	IGBT 1200V 50A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	1200 V	-	150 A	2.1V @ 15V, 50A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
RJP3045DPP-B1-T2F	Renesas Electronics Corporation	HIGH SPEED IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGTM10N40A	Harris Corporation	N CHANNEL IGBT FOR SWITCHING APP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA Supplier Device Package: TO-3	封裝: -	Request a Quote	400 V	10 A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-204AA	TO-3
HGTG27N60C3DR	Harris Corporation	UFS SERIES N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 54 A Current - Collector Pulsed (Icm): 108 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 27A Power - Max: 208 W Switching Energy: - Input Type: Standard Gate Charge: 212 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: -	Request a Quote	600 V	54 A	108 A	2.2V @ 15V, 27A	208 W	-	Standard	212 nC	-	-	-	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IKW75N65ET7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A Power - Max: 333 W Switching Energy: 2.17mJ (on), 1.23mJ (off) Input Type: Standard Gate Charge: 435 nC Td (on/off) @ 25°C: 28ns/310ns Test Condition: 400V, 75A, 4.7Ohm, 15V Reverse Recovery Time (trr): 100 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封裝: -	庫存1,362	650 V	80 A	225 A	1.65V @ 15V, 75A	333 W	2.17mJ (on), 1.23mJ (off)	Standard	435 nC	28ns/310ns	400V, 75A, 4.7Ohm, 15V	100 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
SIGC25T60SNCX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 44ns/324ns Test Condition: 400V, 30A, 11Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	600 V	30 A	90 A	2.5V @ 15V, 30A	-	-	Standard	-	44ns/324ns	400V, 30A, 11Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
AOT10B60M1	Alpha & Omega Semiconductor Inc.	IGBT 10A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 25 A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 10A Power - Max: 83 W Switching Energy: 190µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 14 nC Td (on/off) @ 25°C: 5.5ns/61ns Test Condition: 400V, 10A, 30Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	封裝: -	Request a Quote	600 V	20 A	25 A	2.9V @ 15V, 10A	83 W	190µJ (on), 140µJ (off)	Standard	14 nC	5.5ns/61ns	400V, 10A, 30Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
SIGC28T60EX1SA4	Infineon Technologies	IGBT TRENCH FS 600V 50A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	600 V	50 A	150 A	1.85V @ 15V, 50A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IXYH55N120C4H1	IXYS	IGBT TRENCH 1200V 126A TO247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 126 A Current - Collector Pulsed (Icm): 290 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A Power - Max: 650 W Switching Energy: 3.5mJ (on), 1.34mJ (off) Input Type: Standard Gate Charge: 114 nC Td (on/off) @ 25°C: 20ns/180ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 180 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	封裝: -	Request a Quote	1200 V	126 A	290 A	2.5V @ 15V, 55A	650 W	3.5mJ (on), 1.34mJ (off)	Standard	114 nC	20ns/180ns	600V, 40A, 5Ohm, 15V	180 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)