頁 55 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  55/158
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封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7CH20K10EF
Infineon Technologies

IGBT 1200V DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,944
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG6S320UTRRPBF
Infineon Technologies

IGBT 330V 50A 114W D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A
  • Power - Max: 114W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 24ns/89ns
  • Test Condition: 196V, 12A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,160
330V
50A
-
1.65V @ 15V, 24A
114W
-
Standard
46nC
24ns/89ns
196V, 12A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4RC10UTRR
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 80µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 19ns/116ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,816
600V
8.5A
34A
2.6V @ 15V, 5A
38W
80µJ (on), 160µJ (off)
Standard
15nC
19ns/116ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4BC20U
Infineon Technologies

IGBT 600V 13A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 100µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 21ns/86ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存6,944
600V
13A
52A
2.1V @ 15V, 6.5A
60W
100µJ (on), 120µJ (off)
Standard
27nC
21ns/86ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot APT44GA60BD30C
Microsemi Corporation

IGBT 600V 78A 337W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
  • Power - Max: 337W
  • Switching Energy: 409µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 128nC
  • Td (on/off) @ 25°C: 16ns/102ns
  • Test Condition: 400V, 26A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封裝: TO-247-3
庫存587,100
600V
78A
130A
1.6V @ 15V, 26A
337W
409µJ (on), 450µJ (off)
Standard
128nC
16ns/102ns
400V, 26A, 4.7 Ohm, 15V
-
-
Through Hole
TO-247-3
TO-247 [B]
hot IXSK35N120BD1
IXYS

IGBT 1200V 70A 300W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 36ns/160ns
  • Test Condition: 960V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264AA(IXSK)
封裝: TO-264-3, TO-264AA
庫存5,232
1200V
70A
140A
3.6V @ 15V, 35A
300W
5mJ (off)
Standard
120nC
36ns/160ns
960V, 35A, 5 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264AA(IXSK)
IRG7CH44K10EF
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 60ns/230ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存2,640
1200V
25A
-
2.3V @ 15V, 25A
-
-
Standard
160nC
60ns/230ns
600V, 25A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKP04N60TXKSA1
Infineon Technologies

IGBT 600V 8A 42W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 42W
  • Switching Energy: 143µJ
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/164ns
  • Test Condition: 400V, 4A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存2,352
600V
8A
12A
2.05V @ 15V, 4A
42W
143µJ
Standard
27nC
14ns/164ns
400V, 4A, 47 Ohm, 15V
28ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IXGX82N120A3
IXYS

IGBT 1200V 260A 1250W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 260A
  • Current - Collector Pulsed (Icm): 580A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
  • Power - Max: 1250W
  • Switching Energy: 5.5mJ (on), 12.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 34ns/265ns
  • Test Condition: 600V, 80A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存2,896
1200V
260A
580A
2.05V @ 15V, 82A
1250W
5.5mJ (on), 12.5mJ (off)
Standard
340nC
34ns/265ns
600V, 80A, 2 Ohm, 15V
-
-
Through Hole
TO-247-3
PLUS247?-3
APT68GA60LD40
Microsemi Corporation

IGBT 600V 121A 520W TO-264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 121A
  • Current - Collector Pulsed (Icm): 202A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 520W
  • Switching Energy: 715µJ (on), 607µJ (off)
  • Input Type: Standard
  • Gate Charge: 198nC
  • Td (on/off) @ 25°C: 21ns/133ns
  • Test Condition: 400V, 40A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 [L]
封裝: TO-264-3, TO-264AA
庫存7,312
600V
121A
202A
2.5V @ 15V, 40A
520W
715µJ (on), 607µJ (off)
Standard
198nC
21ns/133ns
400V, 40A, 4.7 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
hot IXGH48N60B3D1
IXYS

IGBT 600V 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
  • Power - Max: 300W
  • Switching Energy: 840µJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 22ns/130ns
  • Test Condition: 480V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存52,968
600V
-
280A
1.8V @ 15V, 32A
300W
840µJ (on), 660µJ (off)
Standard
115nC
22ns/130ns
480V, 30A, 5 Ohm, 15V
100ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
FGH75T65UPD_F155
Fairchild/ON Semiconductor

650V,75A FIELD STOP TRENCH IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Power - Max: 375W
  • Switching Energy: 3.68mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 42ns/216ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存5,440
650V
150A
225A
2.3V @ 15V, 75A
375W
3.68mJ (on), 1.6mJ (off)
Standard
68nC
42ns/216ns
400V, 75A, 3 Ohm, 15V
85ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IRGP4750DPBF
Infineon Technologies

IGBT 650V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: 273W
  • Switching Energy: 1.3mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 50ns/105ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存7,072
650V
70A
105A
2V @ 15V, 35A
273W
1.3mJ (on), 500µJ (off)
Standard
105nC
50ns/105ns
400V, 35A, 10 Ohm, 15V
150ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
FGA40T65SHD
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.01mJ (on), 297µJ (off)
  • Input Type: Standard
  • Gate Charge: 72.2nC
  • Td (on/off) @ 25°C: 19.2ns/65.6ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 31.8ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存10,584
650V
80A
120A
2.1V @ 15V, 40A
268W
1.01mJ (on), 297µJ (off)
Standard
72.2nC
19.2ns/65.6ns
400V, 40A, 6 Ohm, 15V
31.8ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
HGT1S10N120BNST
Fairchild/ON Semiconductor

IGBT 1200V 35A 298W TO263AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 298W
  • Switching Energy: 320µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 23ns/165ns
  • Test Condition: 960V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存6,096
1200V
35A
80A
2.7V @ 15V, 10A
298W
320µJ (on), 800µJ (off)
Standard
100nC
23ns/165ns
960V, 10A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot IRG4BC40UPBF
Infineon Technologies

IGBT 600V 40A 160W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 320µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 34ns/110ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存39,600
600V
40A
160A
2.1V @ 15V, 20A
160W
320µJ (on), 350µJ (off)
Standard
100nC
34ns/110ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGB20NC60V
STMicroelectronics

IGBT 600V 60A 200W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 220µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 31ns/100ns
  • Test Condition: 390V, 20A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存16,860
600V
60A
100A
2.5V @ 15V, 20A
200W
220µJ (on), 330µJ (off)
Standard
100nC
31ns/100ns
390V, 20A, 3.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRGS14C40LPBF
Infineon Technologies

IGBT 430V 20A 125W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 900ns/6µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存10,728
430V
20A
-
1.75V @ 5V, 14A
125W
-
Logic
27nC
900ns/6µs
-
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RGW80TS65HRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 214 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 42ns/148ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: -
庫存1,320
650 V
80 A
160 A
1.9V @ 15V, 40A
214 W
-
Standard
110 nC
42ns/148ns
400V, 20A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
SIGC06T60EX1SA2
Infineon Technologies

IGBT TRENCH FS 600V 10A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
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600 V
10 A
30 A
1.9V @ 15V, 10A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
RJH1BF7DPQ-E0-T2
Renesas

RJH1BF7 - INSULATED GATE BIPOLAR

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGW80TK65GVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 39A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 39 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 81 W
  • Switching Energy: 760µJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 44ns/143ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封裝: -
庫存1,350
650 V
39 A
160 A
1.9V @ 15V, 40A
81 W
760µJ (on), 720µJ (off)
Standard
110 nC
44ns/143ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
STGYA50H120DF2
STMicroelectronics

IGBT TRENCH FS 1200V 100A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
  • Power - Max: 535 W
  • Switching Energy: 2mJ (on), 2.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 210 nC
  • Td (on/off) @ 25°C: 40ns/284ns
  • Test Condition: 600V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 340 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
庫存1,803
1200 V
100 A
200 A
2.6V @ 15V, 50A
535 W
2mJ (on), 2.1mJ (off)
Standard
210 nC
40ns/284ns
600V, 50A, 10Ohm, 15V
340 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
SIGC18T60SNCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 36ns/250ns
  • Test Condition: 400V, 20A, 16Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
36ns/250ns
400V, 20A, 16Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
AUIRGDC0250AKMA1
Infineon Technologies

IGBT 1200V 141A 543W SUPER220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 141 A
  • Current - Collector Pulsed (Icm): 99 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 33A
  • Power - Max: 543 W
  • Switching Energy: 15mJ (off)
  • Input Type: Standard
  • Gate Charge: 151 nC
  • Td (on/off) @ 25°C: -/485ns
  • Test Condition: 600V, 33A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-273AA
  • Supplier Device Package: SUPER-220™ (TO-273AA)
封裝: -
庫存3,000
1200 V
141 A
99 A
1.8V @ 15V, 33A
543 W
15mJ (off)
Standard
151 nC
-/485ns
600V, 33A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-273AA
SUPER-220™ (TO-273AA)
KGF65A3L
Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/30

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 30A
  • Power - Max: 217 W
  • Switching Energy: 600µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 60 nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: -
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650 V
50 A
90 A
1.96V @ 15V, 30A
217 W
600µJ (on), 600µJ (off)
Standard
60 nC
30ns/90ns
400V, 30A, 10Ohm, 15V
50 ns
175°C (TJ)
Through Hole
TO-247-3
TO-247-3
AOK40B120M1
Alpha & Omega Semiconductor Inc.

IGBT 1200V 40A TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
  • Power - Max: 600 W
  • Switching Energy: 3.87mJ (on), 1.25mJ (off)
  • Input Type: Standard
  • Gate Charge: 140 nC
  • Td (on/off) @ 25°C: 90ns/226ns
  • Test Condition: 600V, 40A, 7.5Ohm, 15V
  • Reverse Recovery Time (trr): 340 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
Request a Quote
1200 V
80 A
120 A
2.45V @ 15V, 40A
600 W
3.87mJ (on), 1.25mJ (off)
Standard
140 nC
90ns/226ns
600V, 40A, 7.5Ohm, 15V
340 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGP8M120DF3
STMicroelectronics

TRENCH GATE FIELD-STOP, 1200 V,

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 32 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
  • Power - Max: -
  • Switching Energy: 390µJ (on), 370µJ (Off)
  • Input Type: Standard
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: 20ns/126ns
  • Test Condition: 600V, 8A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: -
Request a Quote
1200 V
16 A
32 A
2.3V @ 15V, 8A
-
390µJ (on), 370µJ (Off)
Standard
32 nC
20ns/126ns
600V, 8A, 33Ohm, 15V
103 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220