電晶體 - IGBT - 單

IRG7PH50U-EP

Infineon Technologies

IGBT 1200V ULTRA FAST TO247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 140A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 556W
• Switching Energy: 4.6mJ (on), 3.2mJ (off)
• Input Type: Standard
• Gate Charge: 440nC
• Td (on/off) @ 25°C: 35ns/430ns
• Test Condition: 600V, 50A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247AD

封裝: TO-247-3

IRG8P40N120KD-EPBF

Infineon Technologies

IGBT 1200V 60A 305W TO-247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
• Power - Max: 305W
• Switching Energy: 1.6mJ (on), 1.8mJ (off)
• Input Type: Standard
• Gate Charge: 240nC
• Td (on/off) @ 25°C: 40ns/245ns
• Test Condition: 600V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 80ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封裝: TO-247-3

IKD04N60RF

Infineon Technologies

IGBT 600V 8A 75W TO252-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 8A
• Current - Collector Pulsed (Icm): 12A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Power - Max: 75W
• Switching Energy: 110µJ
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 12ns/116ns
• Test Condition: 400V, 4A, 43 Ohm, 15V
• Reverse Recovery Time (trr): 34ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IKA03N120H2XKSA1

Infineon Technologies

IGBT 1200V 8.2A 29W TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 8.2A
• Current - Collector Pulsed (Icm): 9A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 29W
• Switching Energy: 290µJ
• Input Type: Standard
• Gate Charge: 8.6nC
• Td (on/off) @ 25°C: 9.2ns/281ns
• Test Condition: 800V, 3A, 82 Ohm, 15V
• Reverse Recovery Time (trr): 52ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: PG-TO220-3

封裝: TO-220-3 Full Pack

IXSK40N60BD1

IXYS

IGBT 600V 75A 280W TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
• Power - Max: 280W
• Switching Energy: 1.8mJ (off)
• Input Type: Standard
• Gate Charge: 190nC
• Td (on/off) @ 25°C: 50ns/110ns
• Test Condition: 480V, 40A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264AA(IXSK)

封裝: TO-264-3, TO-264AA

IXGT40N60C2D1

IXYS

IGBT 600V 75A 300W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
• Power - Max: 300W
• Switching Energy: 200µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 18ns/90ns
• Test Condition: 400V, 30A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

NGB8202NT4

ON Semiconductor

IGBT 440V 20A 150W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 440V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -/5µs
• Test Condition: 300V, 9A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SGP13N60UFTU

Fairchild/ON Semiconductor

IGBT 600V 13A 60W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 52A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
• Power - Max: 60W
• Switching Energy: 85µJ (on), 95µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 20ns/70ns
• Test Condition: 300V, 6.5A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

封裝: TO-220-3

IXBT24N170

IXYS

IGBT 1700V 60A 250W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 230A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
• Power - Max: 250W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.06µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXDH20N120

IXYS

IGBT 1200V 38A 200W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 38A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
• Power - Max: 200W
• Switching Energy: 3.1mJ (on), 2.4mJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 20A, 82 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

封裝: TO-3P-3 Full Pack

IXGR35N120D1

IXYS

IGBT 1200V ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

封裝: ISOPLUS247?

IXA12IF1200PB

IXYS

IGBT 1200V 20A 85W TO220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
• Power - Max: 85W
• Switching Energy: 1.1mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 10A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 350ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

GPA015A120MN-ND

Global Power Technologies Group

IGBT 1200V 30A 212W TO3PN

• IGBT Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: 212W
• Switching Energy: 1.61mJ (on), 530µJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 25ns/166ns
• Test Condition: 600V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 320ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

封裝: TO-3P-3, SC-65-3

NGB18N40ACLBT4G

Littelfuse Inc.

IGBT 430V 18A 115W D2PAK3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 18A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
• Power - Max: 115W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IHW40N135R3FKSA1

Infineon Technologies

IGBT 1350V 80A 429W TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1350V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
• Power - Max: 429W
• Switching Energy: 2.5mJ (off)
• Input Type: Standard
• Gate Charge: 365nC
• Td (on/off) @ 25°C: -/343ns
• Test Condition: 600V, 40A, 7.5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: TO-247-3

FGA40S65SH

Fairchild/ON Semiconductor

650V FS GEN3 TRENCH IGBT

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
• Power - Max: 268W
• Switching Energy: 194µJ (on), 388µJ (off)
• Input Type: Standard
• Gate Charge: 73nC
• Td (on/off) @ 25°C: 19.2ns/68.8ns
• Test Condition: 400V, 40A, 6 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

封裝: TO-3P-3, SC-65-3

STGP5H60DF

STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H S

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): 20A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
• Power - Max: 88W
• Switching Energy: 56µJ (on), 78.5µJ (off)
• Input Type: Standard
• Gate Charge: 43nC
• Td (on/off) @ 25°C: 30ns/140ns
• Test Condition: 400V, 5A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 134.5ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封裝: TO-220-3

RGTVX2TS65DGC11

Rohm Semiconductor

IGBT TRENCH FS 650V 111A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 111 A
• Current - Collector Pulsed (Icm): 240 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
• Power - Max: 319 W
• Switching Energy: 2.08mJ (on), 1.15mJ (off)
• Input Type: Standard
• Gate Charge: 123 nC
• Td (on/off) @ 25°C: 49ns/150ns
• Test Condition: 400V, 60A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: -

FGD3040G2_SN00297

onsemi

INTEGRATED CIRCUIT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Current - Collector (Ic) (Max): 41 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 21 nC
• Td (on/off) @ 25°C: -/4.8µs
• Test Condition: 300V, 6.5A, 1kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

封裝: -

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RGWS80TS65DGC13

Rohm Semiconductor

IGBT TRENCH FS 650V 71A TO247G

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 71 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 202 W
• Switching Energy: 700µJ (on), 660µJ (off)
• Input Type: Standard
• Gate Charge: 83 nC
• Td (on/off) @ 25°C: 40ns/114ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 88 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247G

封裝: -

ISL9V5036S3ST_SB82170

onsemi

INTEGRATED CIRCUIT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 390 V
• Current - Collector (Ic) (Max): 46 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
• Power - Max: 250 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 32 nC
• Td (on/off) @ 25°C: -/10.8µs
• Test Condition: 300V, 1kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

封裝: -

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RGTV60TS65DGC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 60A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: 194 W
• Switching Energy: 570µJ (on), 500µJ (off)
• Input Type: Standard
• Gate Charge: 64 nC
• Td (on/off) @ 25°C: 33ns/105ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): 95 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: -

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RGW80NL65DHRBTL

Rohm Semiconductor

IGBT TRENCH FS 650V 83A TO263L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 83 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
• Power - Max: 227 W
• Switching Energy: 240µJ (on), 330µJ (off)
• Input Type: Standard
• Gate Charge: 110 nC
• Td (on/off) @ 25°C: 42ns/148ns
• Test Condition: 400V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): 92 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263L

封裝: -

IGTH20N50

Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 500 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-218-3 Isolated Tab, TO-218AC
• Supplier Device Package: TO-218 Isolated

封裝: -

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IXYH30N120C4

IXYS

DISC IGBT XPT-GENX4 TO-247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 94 A
• Current - Collector Pulsed (Icm): 166 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
• Power - Max: 500 W
• Switching Energy: 4.8mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 57 nC
• Td (on/off) @ 25°C: 18ns/205ns
• Test Condition: 960V, 25A, 5Ohm, 15V
• Reverse Recovery Time (trr): 58 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

封裝: -

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RGC80TSX8RGC11

Rohm Semiconductor

IGBT TRENCH FLD 1800V 80A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1800 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
• Power - Max: 535 W
• Switching Energy: 1.85mJ (on), 1.6mJ (off)
• Input Type: Standard
• Gate Charge: 468 nC
• Td (on/off) @ 25°C: 80ns/565ns
• Test Condition: 600V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: -

RJP30Y2ADPP-M9-T2F

Renesas Electronics Corporation

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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IKFW50N60ETXKSA1

Infineon Technologies

IGBT TRENCH FS 600V 73A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 73 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 164 W
• Switching Energy: 1.5mJ (on), 1.42mJ (off)
• Input Type: Standard
• Gate Charge: 290 nC
• Td (on/off) @ 25°C: 28ns/305ns
• Test Condition: 400V, 50A, 7Ohm, 15V
• Reverse Recovery Time (trr): 91 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-AI

封裝: -