頁 33 - 電晶體 - IGBT - 單 | 離散半導體產品

IRG4BC20SD-SPBF

Infineon Technologies

IGBT 600V 19A 60W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 19A
Current - Collector Pulsed (Icm): 38A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Power - Max: 60W
Switching Energy: 320µJ (on), 2.58mJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 62ns/690ns
Test Condition: 480V, 10A, 50 Ohm, 15V
Reverse Recovery Time (trr): 37ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存4,640

600V

19A

38A

1.6V @ 15V, 10A

60W

320µJ (on), 2.58mJ (off)

Standard

27nC

62ns/690ns

480V, 10A, 50 Ohm, 15V

37ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

RJH60M2DPE-00#J3

Renesas Electronics America

IGBT 600V 25A 63W LDPAK

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 25A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Power - Max: 63W
Switching Energy: 180µJ (on), 180µJ (off)
Input Type: Standard
Gate Charge: 33nC
Td (on/off) @ 25°C: 32ns/70ns
Test Condition: 300V, 12A, 5 Ohm, 15V
Reverse Recovery Time (trr): 85ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-83
Supplier Device Package: 4-LDPAK

封裝: SC-83

庫存6,784

600V

25A

-

2.5V @ 15V, 12A

63W

180µJ (on), 180µJ (off)

Standard

33nC

32ns/70ns

300V, 12A, 5 Ohm, 15V

85ns

150°C (TJ)

Surface Mount

SC-83

4-LDPAK

IXGX120N60C2

IXYS

IGBT 600V 75A 830W PLUS TO-247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 500A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Power - Max: 830W
Switching Energy: 1.7mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 370nC
Td (on/off) @ 25°C: 40ns/120ns
Test Condition: 400V, 80A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

封裝: TO-247-3

庫存7,040

600V

75A

500A

2.5V @ 15V, 100A

830W

1.7mJ (on), 1mJ (off)

Standard

370nC

40ns/120ns

400V, 80A, 1 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PLUS247?-3

IXGX50N60BD1

IXYS

IGBT 600V 75A 300W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Power - Max: 300W
Switching Energy: 1.5mJ (off)
Input Type: Standard
Gate Charge: 110nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 480V, 50A, 2.7 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

封裝: TO-247-3

庫存6,944

600V

75A

200A

2.3V @ 15V, 50A

300W

1.5mJ (off)

Standard

110nC

50ns/200ns

480V, 50A, 2.7 Ohm, 15V

50ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PLUS247?-3

IXGT60N60

IXYS

IGBT 600V 75A 300W TO268

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Power - Max: 300W
Switching Energy: 8mJ (off)
Input Type: Standard
Gate Charge: 130nC
Td (on/off) @ 25°C: 50ns/300ns
Test Condition: 480V, 60A, 2.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

庫存3,552

600V

75A

200A

1.7V @ 15V, 60A

300W

8mJ (off)

Standard

130nC

50ns/300ns

480V, 60A, 2.7 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

IRGB10B60KDPBF

Infineon Technologies

IGBT 600V 22A 156W TO220AB

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 22A
Current - Collector Pulsed (Icm): 44A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Power - Max: 156W
Switching Energy: 140µJ (on), 250µJ (off)
Input Type: Standard
Gate Charge: 38nC
Td (on/off) @ 25°C: 30ns/230ns
Test Condition: 400V, 10A, 47 Ohm, 15V
Reverse Recovery Time (trr): 90ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封裝: TO-220-3

庫存103,464

600V

22A

44A

2.2V @ 15V, 10A

156W

140µJ (on), 250µJ (off)

Standard

38nC

30ns/230ns

400V, 10A, 47 Ohm, 15V

90ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IGW08T120FKSA1

Infineon Technologies

IGBT 1200V 16A 70W TO247-3

IGBT Type: NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Power - Max: 70W
Switching Energy: 1.37mJ
Input Type: Standard
Gate Charge: 53nC
Td (on/off) @ 25°C: 40ns/450ns
Test Condition: 600V, 8A, 81 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封裝: TO-247-3

庫存7,808

1200V

16A

24A

2.2V @ 15V, 8A

70W

1.37mJ

Standard

53nC

40ns/450ns

600V, 8A, 81 Ohm, 15V

-

-40°C ~ 150°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IXGX100N170

IXYS

IGBT 1700V 170A 830W PLUS247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 170A
Current - Collector Pulsed (Icm): 600A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Power - Max: 830W
Switching Energy: -
Input Type: Standard
Gate Charge: 425nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

封裝: TO-247-3

庫存3,424

1700V

170A

600A

3V @ 15V, 100A

830W

-

Standard

425nC

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PLUS247?-3

IXGR80N60B

IXYS

IGBT 600V ISOPLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

封裝: ISOPLUS247?

庫存7,872

600V

-

Standard

-

Through Hole

ISOPLUS247?

APT30GP60LDLG

Microsemi Corporation

IGBT 600V 100A 463W TO264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Power - Max: 463W
Switching Energy: 260µJ (on), 250µJ (off)
Input Type: Standard
Gate Charge: 90nC
Td (on/off) @ 25°C: 13ns/55ns
Test Condition: 400V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264

封裝: TO-264-3, TO-264AA

庫存6,256

600V

100A

120A

2.7V @ 15V, 30A

463W

260µJ (on), 250µJ (off)

Standard

90nC

13ns/55ns

400V, 30A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264

NGTB40N65IHRWG

ON Semiconductor

IGBT FIELD STOP 650V 80A TO247

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Power - Max: 405W
Switching Energy: 420µJ (off)
Input Type: Standard
Gate Charge: 190nC
Td (on/off) @ 25°C: -
Test Condition: 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: TO-247-3

庫存4,432

650V

80A

160A

1.7V @ 15V, 40A

405W

420µJ (off)

Standard

190nC

-

400V, 40A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

FGH20N60SFDTU

Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO247

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Power - Max: 165W
Switching Energy: 370µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 13ns/90ns
Test Condition: 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): 34ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: TO-247-3

庫存3,504

600V

40A

60A

2.8V @ 15V, 20A

165W

370µJ (on), 160µJ (off)

Standard

65nC

13ns/90ns

400V, 20A, 10 Ohm, 15V

34ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

IGW30N100TFKSA1

Infineon Technologies

IGBT 1000V 60A 412W TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Power - Max: 412W
Switching Energy: 3.8mJ
Input Type: Standard
Gate Charge: 217nC
Td (on/off) @ 25°C: 33ns/535ns
Test Condition: 600V, 30A, 16 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封裝: TO-247-3

庫存5,536

1000V

60A

90A

1.9V @ 15V, 30A

412W

3.8mJ

Standard

217nC

33ns/535ns

600V, 30A, 16 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IRG4PH20KPBF

Infineon Technologies

IGBT 1200V 11A 60W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 11A
Current - Collector Pulsed (Icm): 22A
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Power - Max: 60W
Switching Energy: 450µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 28nC
Td (on/off) @ 25°C: 23ns/93ns
Test Condition: 960V, 5A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

封裝: TO-247-3

庫存8,520

1200V

11A

22A

4.3V @ 15V, 5A

60W

450µJ (on), 440µJ (off)

Standard

28nC

23ns/93ns

960V, 5A, 50 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

FGH75N60UFTU

Fairchild/ON Semiconductor

IGBT 600V 150A 452W TO247

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 150A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Power - Max: 452W
Switching Energy: 3.05mJ (on), 1.35mJ (off)
Input Type: Standard
Gate Charge: 250nC
Td (on/off) @ 25°C: 27ns/128ns
Test Condition: 400V, 75A, 3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: TO-247-3

庫存66,480

600V

150A

225A

2.4V @ 15V, 75A

452W

3.05mJ (on), 1.35mJ (off)

Standard

250nC

27ns/128ns

400V, 75A, 3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

IRGR3B60KD2TRLP

Infineon Technologies

IGBT 600V 7.8A 52W DPAK

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 7.8A
Current - Collector Pulsed (Icm): 15.6A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Power - Max: 52W
Switching Energy: 62µJ (on), 39µJ (off)
Input Type: Standard
Gate Charge: 13nC
Td (on/off) @ 25°C: 18ns/110ns
Test Condition: 400V, 3A, 100 Ohm, 15V
Reverse Recovery Time (trr): 77ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存42,150

600V

7.8A

15.6A

2.4V @ 15V, 3A

52W

62µJ (on), 39µJ (off)

Standard

13nC

18ns/110ns

400V, 3A, 100 Ohm, 15V

77ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

IHW20N120R3FKSA1

Infineon Technologies

IGBT 1200V 40A 310W TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Power - Max: 310W
Switching Energy: 950µJ (off)
Input Type: Standard
Gate Charge: 211nC
Td (on/off) @ 25°C: -/387ns
Test Condition: 600V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封裝: TO-247-3

庫存6,640

1200V

40A

60A

1.7V @ 15V, 20A

310W

950µJ (off)

Standard

211nC

-/387ns

600V, 20A, 15 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

FGA60N65SMD

Fairchild/ON Semiconductor

IGBT 650V 120A 600W TO3P

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Power - Max: 600W
Switching Energy: 1.54mJ (on), 450µJ (off)
Input Type: Standard
Gate Charge: 189nC
Td (on/off) @ 25°C: 18ns/104ns
Test Condition: 400V, 60A, 3 Ohm, 15V
Reverse Recovery Time (trr): 47ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN

封裝: TO-3P-3, SC-65-3

庫存7,656

650V

120A

180A

2.5V @ 15V, 60A

600W

1.54mJ (on), 450µJ (off)

Standard

189nC

18ns/104ns

400V, 60A, 3 Ohm, 15V

47ns

-55°C ~ 175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3PN

RJP30E3DPK-M2-T0

Renesas Electronics Corporation

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

AOT15B65MQ1

Alpha & Omega Semiconductor Inc.

IGBT 15A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
Power - Max: 214 W
Switching Energy: 290µJ (on), 200µJ (off)
Input Type: Standard
Gate Charge: 32 nC
Td (on/off) @ 25°C: 15ns/94ns
Test Condition: 400V, 15A, 20Ohm, 15V
Reverse Recovery Time (trr): 106 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

封裝: -

Request a Quote

650 V

30 A

45 A

2.15V @ 15V, 15A

214 W

290µJ (on), 200µJ (off)

Standard

32 nC

15ns/94ns

400V, 15A, 20Ohm, 15V

106 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220

IXYA20N120B4HV

IXYS

IGBT 1200V 20A GENX4 XPT TO263D2

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 76 A
Current - Collector Pulsed (Icm): 130 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Power - Max: 375 W
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Input Type: Standard
Gate Charge: 44 nC
Td (on/off) @ 25°C: 15ns/200ns
Test Condition: 960mV, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 47 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV

封裝: -

庫存693

1200 V

76 A

130 A

2.1V @ 15V, 20A

375 W

3.9mJ (on), 1.6mJ (off)

Standard

44 nC

15ns/200ns

960mV, 20A, 10Ohm, 15V

47 ns

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263HV

SGH15N120RUFTU

Fairchild Semiconductor

IGBT, 24A, 1200V, N-CHANNEL

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 24 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Power - Max: 180 W
Switching Energy: -
Input Type: Standard
Gate Charge: 108 nC
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 600V, 15A, 20Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

封裝: -

Request a Quote

1200 V

24 A

45 A

3V @ 15V, 15A

180 W

-

Standard

108 nC

20ns/60ns

600V, 15A, 20Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

IKZA40N65RH5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 74A TO247-4

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 250 W
Switching Energy: 140µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 95 nC
Td (on/off) @ 25°C: 17ns/165ns
Test Condition: 400V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4-3

封裝: -

庫存51

650 V

74 A

60 A

2.1V @ 15V, 40A

250 W

140µJ (on), 120µJ (off)

Standard

95 nC

17ns/165ns

400V, 20A, 15Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-4

PG-TO247-4-3

SIGC76T65R3EX1SA1

Infineon Technologies

IGBT TRENCH FS 650V 150A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
Current - Collector Pulsed (Icm): 450 A
Vce(on) (Max) @ Vge, Ic: 1.2V @ 15V, 45A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

650 V

150 A

450 A

1.2V @ 15V, 45A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

IXYA20N65C3

IXYS

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 105 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 230 W
Switching Energy: 430µJ (on), 650µJ (off)
Input Type: Standard
Gate Charge: 30 nC
Td (on/off) @ 25°C: 19ns/80ns
Test Condition: 400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr): 34 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AA

封裝: -

Request a Quote

650 V

20 A

105 A

2.5V @ 15V, 20A

230 W

430µJ (on), 650µJ (off)

Standard

30 nC

19ns/80ns

400V, 20A, 20Ohm, 15V

34 ns

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AA

PCFG25T120SMW

onsemi

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

RGTH40TS65GC13

Rohm Semiconductor

IGBT TRENCH FS 650V 40A TO247G

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Power - Max: 144 W
Switching Energy: -
Input Type: Standard
Gate Charge: 40 nC
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247G

封裝: -

庫存300

650 V

40 A

80 A

2.1V @ 15V, 20A

144 W

-

Standard

40 nC

22ns/73ns

400V, 20A, 10Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247G

AUXTMGPS4070D2

Infineon Technologies

IGBT TRENCH

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG4BC20SD-SPBF	Infineon Technologies	IGBT 600V 19A 60W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 19A Current - Collector Pulsed (Icm): 38A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: 60W Switching Energy: 320µJ (on), 2.58mJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 62ns/690ns Test Condition: 480V, 10A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存4,640	600V	19A	38A	1.6V @ 15V, 10A	60W	320µJ (on), 2.58mJ (off)	Standard	27nC	62ns/690ns	480V, 10A, 50 Ohm, 15V	37ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
RJH60M2DPE-00#J3	Renesas Electronics America	IGBT 600V 25A 63W LDPAK IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Power - Max: 63W Switching Energy: 180µJ (on), 180µJ (off) Input Type: Standard Gate Charge: 33nC Td (on/off) @ 25°C: 32ns/70ns Test Condition: 300V, 12A, 5 Ohm, 15V Reverse Recovery Time (trr): 85ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-83 Supplier Device Package: 4-LDPAK	封裝: SC-83	庫存6,784	600V	25A	-	2.5V @ 15V, 12A	63W	180µJ (on), 180µJ (off)	Standard	33nC	32ns/70ns	300V, 12A, 5 Ohm, 15V	85ns	150°C (TJ)	Surface Mount	SC-83	4-LDPAK
IXGX120N60C2	IXYS	IGBT 600V 75A 830W PLUS TO-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 500A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: 830W Switching Energy: 1.7mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 370nC Td (on/off) @ 25°C: 40ns/120ns Test Condition: 400V, 80A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	封裝: TO-247-3	庫存7,040	600V	75A	500A	2.5V @ 15V, 100A	830W	1.7mJ (on), 1mJ (off)	Standard	370nC	40ns/120ns	400V, 80A, 1 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247?-3
IXGX50N60BD1	IXYS	IGBT 600V 75A 300W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Power - Max: 300W Switching Energy: 1.5mJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 50ns/200ns Test Condition: 480V, 50A, 2.7 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	封裝: TO-247-3	庫存6,944	600V	75A	200A	2.3V @ 15V, 50A	300W	1.5mJ (off)	Standard	110nC	50ns/200ns	480V, 50A, 2.7 Ohm, 15V	50ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247?-3
IXGT60N60	IXYS	IGBT 600V 75A 300W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A Power - Max: 300W Switching Energy: 8mJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 50ns/300ns Test Condition: 480V, 60A, 2.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	庫存3,552	600V	75A	200A	1.7V @ 15V, 60A	300W	8mJ (off)	Standard	130nC	50ns/300ns	480V, 60A, 2.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IRGB10B60KDPBF	Infineon Technologies	IGBT 600V 22A 156W TO220AB IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 22A Current - Collector Pulsed (Icm): 44A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A Power - Max: 156W Switching Energy: 140µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 38nC Td (on/off) @ 25°C: 30ns/230ns Test Condition: 400V, 10A, 47 Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封裝: TO-220-3	庫存103,464	600V	22A	44A	2.2V @ 15V, 10A	156W	140µJ (on), 250µJ (off)	Standard	38nC	30ns/230ns	400V, 10A, 47 Ohm, 15V	90ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IGW08T120FKSA1	Infineon Technologies	IGBT 1200V 16A 70W TO247-3 IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A Power - Max: 70W Switching Energy: 1.37mJ Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25°C: 40ns/450ns Test Condition: 600V, 8A, 81 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封裝: TO-247-3	庫存7,808	1200V	16A	24A	2.2V @ 15V, 8A	70W	1.37mJ	Standard	53nC	40ns/450ns	600V, 8A, 81 Ohm, 15V	-	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IXGX100N170	IXYS	IGBT 1700V 170A 830W PLUS247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 170A Current - Collector Pulsed (Icm): 600A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Power - Max: 830W Switching Energy: - Input Type: Standard Gate Charge: 425nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	封裝: TO-247-3	庫存3,424	1700V	170A	600A	3V @ 15V, 100A	830W	-	Standard	425nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247?-3
IXGR80N60B	IXYS	IGBT 600V ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	封裝: ISOPLUS247?	庫存7,872	600V	-	-	-	-	-	Standard	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
APT30GP60LDLG	Microsemi Corporation	IGBT 600V 100A 463W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 463W Switching Energy: 260µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 400V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	封裝: TO-264-3, TO-264AA	庫存6,256	600V	100A	120A	2.7V @ 15V, 30A	463W	260µJ (on), 250µJ (off)	Standard	90nC	13ns/55ns	400V, 30A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264
NGTB40N65IHRWG	ON Semiconductor	IGBT FIELD STOP 650V 80A TO247 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Power - Max: 405W Switching Energy: 420µJ (off) Input Type: Standard Gate Charge: 190nC Td (on/off) @ 25°C: - Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存4,432	650V	80A	160A	1.7V @ 15V, 40A	405W	420µJ (off)	Standard	190nC	-	400V, 40A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
FGH20N60SFDTU	Fairchild/ON Semiconductor	IGBT 600V 40A 165W TO247 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Power - Max: 165W Switching Energy: 370µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 13ns/90ns Test Condition: 400V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 34ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存3,504	600V	40A	60A	2.8V @ 15V, 20A	165W	370µJ (on), 160µJ (off)	Standard	65nC	13ns/90ns	400V, 20A, 10 Ohm, 15V	34ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IGW30N100TFKSA1	Infineon Technologies	IGBT 1000V 60A 412W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 412W Switching Energy: 3.8mJ Input Type: Standard Gate Charge: 217nC Td (on/off) @ 25°C: 33ns/535ns Test Condition: 600V, 30A, 16 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封裝: TO-247-3	庫存5,536	1000V	60A	90A	1.9V @ 15V, 30A	412W	3.8mJ	Standard	217nC	33ns/535ns	600V, 30A, 16 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IRG4PH20KPBF	Infineon Technologies	IGBT 1200V 11A 60W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Power - Max: 60W Switching Energy: 450µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 23ns/93ns Test Condition: 960V, 5A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	封裝: TO-247-3	庫存8,520	1200V	11A	22A	4.3V @ 15V, 5A	60W	450µJ (on), 440µJ (off)	Standard	28nC	23ns/93ns	960V, 5A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
FGH75N60UFTU	Fairchild/ON Semiconductor	IGBT 600V 150A 452W TO247 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A Power - Max: 452W Switching Energy: 3.05mJ (on), 1.35mJ (off) Input Type: Standard Gate Charge: 250nC Td (on/off) @ 25°C: 27ns/128ns Test Condition: 400V, 75A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存66,480	600V	150A	225A	2.4V @ 15V, 75A	452W	3.05mJ (on), 1.35mJ (off)	Standard	250nC	27ns/128ns	400V, 75A, 3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IRGR3B60KD2TRLP	Infineon Technologies	IGBT 600V 7.8A 52W DPAK IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 7.8A Current - Collector Pulsed (Icm): 15.6A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A Power - Max: 52W Switching Energy: 62µJ (on), 39µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 18ns/110ns Test Condition: 400V, 3A, 100 Ohm, 15V Reverse Recovery Time (trr): 77ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存42,150	600V	7.8A	15.6A	2.4V @ 15V, 3A	52W	62µJ (on), 39µJ (off)	Standard	13nC	18ns/110ns	400V, 3A, 100 Ohm, 15V	77ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
IHW20N120R3FKSA1	Infineon Technologies	IGBT 1200V 40A 310W TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Power - Max: 310W Switching Energy: 950µJ (off) Input Type: Standard Gate Charge: 211nC Td (on/off) @ 25°C: -/387ns Test Condition: 600V, 20A, 15 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封裝: TO-247-3	庫存6,640	1200V	40A	60A	1.7V @ 15V, 20A	310W	950µJ (off)	Standard	211nC	-/387ns	600V, 20A, 15 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
FGA60N65SMD	Fairchild/ON Semiconductor	IGBT 650V 120A 600W TO3P IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Power - Max: 600W Switching Energy: 1.54mJ (on), 450µJ (off) Input Type: Standard Gate Charge: 189nC Td (on/off) @ 25°C: 18ns/104ns Test Condition: 400V, 60A, 3 Ohm, 15V Reverse Recovery Time (trr): 47ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	封裝: TO-3P-3, SC-65-3	庫存7,656	650V	120A	180A	2.5V @ 15V, 60A	600W	1.54mJ (on), 450µJ (off)	Standard	189nC	18ns/104ns	400V, 60A, 3 Ohm, 15V	47ns	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
RJP30E3DPK-M2-T0	Renesas Electronics Corporation	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOT15B65MQ1	Alpha & Omega Semiconductor Inc.	IGBT 15A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Power - Max: 214 W Switching Energy: 290µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 32 nC Td (on/off) @ 25°C: 15ns/94ns Test Condition: 400V, 15A, 20Ohm, 15V Reverse Recovery Time (trr): 106 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	封裝: -	Request a Quote	650 V	30 A	45 A	2.15V @ 15V, 15A	214 W	290µJ (on), 200µJ (off)	Standard	32 nC	15ns/94ns	400V, 15A, 20Ohm, 15V	106 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
IXYA20N120B4HV	IXYS	IGBT 1200V 20A GENX4 XPT TO263D2 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 76 A Current - Collector Pulsed (Icm): 130 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 375 W Switching Energy: 3.9mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 44 nC Td (on/off) @ 25°C: 15ns/200ns Test Condition: 960mV, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 47 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV	封裝: -	庫存693	1200 V	76 A	130 A	2.1V @ 15V, 20A	375 W	3.9mJ (on), 1.6mJ (off)	Standard	44 nC	15ns/200ns	960mV, 20A, 10Ohm, 15V	47 ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263HV
SGH15N120RUFTU	Fairchild Semiconductor	IGBT, 24A, 1200V, N-CHANNEL IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 24 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A Power - Max: 180 W Switching Energy: - Input Type: Standard Gate Charge: 108 nC Td (on/off) @ 25°C: 20ns/60ns Test Condition: 600V, 15A, 20Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	封裝: -	Request a Quote	1200 V	24 A	45 A	3V @ 15V, 15A	180 W	-	Standard	108 nC	20ns/60ns	600V, 15A, 20Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
IKZA40N65RH5XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 74A TO247-4 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 74 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 250 W Switching Energy: 140µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 95 nC Td (on/off) @ 25°C: 17ns/165ns Test Condition: 400V, 20A, 15Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: PG-TO247-4-3	封裝: -	庫存51	650 V	74 A	60 A	2.1V @ 15V, 40A	250 W	140µJ (on), 120µJ (off)	Standard	95 nC	17ns/165ns	400V, 20A, 15Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4	PG-TO247-4-3
SIGC76T65R3EX1SA1	Infineon Technologies	IGBT TRENCH FS 650V 150A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 150 A Current - Collector Pulsed (Icm): 450 A Vce(on) (Max) @ Vge, Ic: 1.2V @ 15V, 45A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	650 V	150 A	450 A	1.2V @ 15V, 45A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IXYA20N65C3	IXYS	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 105 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 230 W Switching Energy: 430µJ (on), 650µJ (off) Input Type: Standard Gate Charge: 30 nC Td (on/off) @ 25°C: 19ns/80ns Test Condition: 400V, 20A, 20Ohm, 15V Reverse Recovery Time (trr): 34 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA	封裝: -	Request a Quote	650 V	20 A	105 A	2.5V @ 15V, 20A	230 W	430µJ (on), 650µJ (off)	Standard	30 nC	19ns/80ns	400V, 20A, 20Ohm, 15V	34 ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AA
PCFG25T120SMW	onsemi	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RGTH40TS65GC13	Rohm Semiconductor	IGBT TRENCH FS 650V 40A TO247G IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 144 W Switching Energy: - Input Type: Standard Gate Charge: 40 nC Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247G	封裝: -	庫存300	650 V	40 A	80 A	2.1V @ 15V, 20A	144 W	-	Standard	40 nC	22ns/73ns	400V, 20A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247G
AUXTMGPS4070D2	Infineon Technologies	IGBT TRENCH IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-