電晶體 - IGBT - 單

IRG7PK35UD1MPBF

Infineon Technologies

IGBT 1200V ULTRA FAST TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IRG7CH35UEF

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 5A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 85nC
• Td (on/off) @ 25°C: 30ns/160ns
• Test Condition: 600V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: Die

IRG8P50N120KDPBF

Infineon Technologies

IGBT 1200V 80A 305W TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 105A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
• Power - Max: 350W
• Switching Energy: 2.3mJ (on), 1.9mJ (off)
• Input Type: Standard
• Gate Charge: 315nC
• Td (on/off) @ 25°C: 35ns/190ns
• Test Condition: 600V, 35A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

IRGP4262DPBF

Infineon Technologies

IGBT 650V 60A 250W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 24A
• Power - Max: 250W
• Switching Energy: 520µJ (on), 240µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 24ns/73ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

IRG4P254SPBF

Infineon Technologies

IGBT 250V 98A 200W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 250V
• Current - Collector (Ic) (Max): 98A
• Current - Collector Pulsed (Icm): 196A
• Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 55A
• Power - Max: 200W
• Switching Energy: 380µJ (on), 3.5mJ (off)
• Input Type: Standard
• Gate Charge: 200nC
• Td (on/off) @ 25°C: 40ns/270ns
• Test Condition: 200V, 55A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

IXGR50N60C2D1

IXYS

IGBT 600V 75A 200W ISOPLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
• Power - Max: 200W
• Switching Energy: 380µJ (off)
• Input Type: Standard
• Gate Charge: 138nC
• Td (on/off) @ 25°C: 18ns/115ns
• Test Condition: 480V, 40A, 2 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

封裝: ISOPLUS247?

STGP12NB60HD

STMicroelectronics

IGBT 600V 30A 125W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
• Power - Max: 125W
• Switching Energy: 210µJ (off)
• Input Type: Standard
• Gate Charge: 68nC
• Td (on/off) @ 25°C: 5ns/91ns
• Test Condition: 480V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 80ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IRGSL10B60KDPBF

Infineon Technologies

IGBT 600V 22A 156W TO220-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 22A
• Current - Collector Pulsed (Icm): 44A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
• Power - Max: 156W
• Switching Energy: 140µJ (on), 250µJ (off)
• Input Type: Standard
• Gate Charge: 38nC
• Td (on/off) @ 25°C: 30ns/230ns
• Test Condition: 400V, 10A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 90ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

AIHD10N60RFATMA1

Infineon Technologies

IC DISCRETE 600V TO252-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: 150W
• Switching Energy: 190µJ (on), 160µJ (off)
• Input Type: Standard
• Gate Charge: 64nC
• Td (on/off) @ 25°C: 12ns/168ns
• Test Condition: 400V, 10A, 26 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IXGH10N100A

IXYS

IGBT 1000V 20A 100W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
• Power - Max: 100W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

IXGP12N100A

IXYS

IGBT 1000V 24A 100W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 48A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 2.5mJ (off)
• Input Type: Standard
• Gate Charge: 65nC
• Td (on/off) @ 25°C: 100ns/850ns
• Test Condition: 800V, 12A, 120 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

APT33GF120B2RDQ2G

Microsemi Corporation

IGBT 1200V 64A 357W TMAX

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 64A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
• Power - Max: 357W
• Switching Energy: 1.315µJ (on), 1.515µJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 14ns/185ns
• Test Condition: 800V, 25A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: -

封裝: TO-247-3 Variant

STGB10M65DF2

STMicroelectronics

IGBT 650V 10A D2PAK

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
• Power - Max: 115W
• Switching Energy: 120µJ (on), 270µJ (off)
• Input Type: Standard
• Gate Charge: 28nC
• Td (on/off) @ 25°C: 19ns/91ns
• Test Condition: 400V, 10A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 96ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AOTF20B65M2

Alpha & Omega Semiconductor Inc.

IGBT 650V 20A TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
• Power - Max: 45W
• Switching Energy: 580µJ (on), 280µJ (off)
• Input Type: Standard
• Gate Charge: 46nC
• Td (on/off) @ 25°C: 26ns/123ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 292ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封裝: TO-220-3

STGFW30H65FB

STMicroelectronics

IGBT 650V 60A 58W TO3PF

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 58W
• Switching Energy: 151µJ (on), 293µJ (off)
• Input Type: Standard
• Gate Charge: 149nC
• Td (on/off) @ 25°C: 37ns/146ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PF-3

封裝: TO-3PFM, SC-93-3

STGB10NC60KT4

STMicroelectronics

IGBT 600V 20A 65W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
• Power - Max: 65W
• Switching Energy: 55µJ (on), 85µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 17ns/72ns
• Test Condition: 390V, 5A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4PC30WPBF

Infineon Technologies

IGBT 600V 23A 100W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): 92A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 130µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 51nC
• Td (on/off) @ 25°C: 25ns/99ns
• Test Condition: 480V, 12A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

AOK40B65M3

Alpha & Omega Semiconductor Inc.

IGBT 650V 40A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
• Power - Max: 300W
• Switching Energy: 1.3mJ (on), 500µJ (off)
• Input Type: Standard
• Gate Charge: 59nC
• Td (on/off) @ 25°C: 40ns/125ns
• Test Condition: 400V, 40A, 7.5 Ohm, 15V
• Reverse Recovery Time (trr): 365ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封裝: TO-247-3

AUIRGPS4067D1

Infineon Technologies

IGBT 600V 240A 750W TO-274

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 240A
• Current - Collector Pulsed (Icm): 360A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
• Power - Max: 750W
• Switching Energy: 8.2mJ (on), 2.9mJ (off)
• Input Type: Standard
• Gate Charge: 360nC
• Td (on/off) @ 25°C: 69ns/198ns
• Test Condition: 400V, 120A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 360ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: SUPER-247 (TO-274AA)

封裝: TO-247-3

FGH40T100SMD

Fairchild/ON Semiconductor

IGBT 1000V 80A 333W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 333W
• Switching Energy: 2.35mJ (on), 1.15mJ (off)
• Input Type: Standard
• Gate Charge: 265nC
• Td (on/off) @ 25°C: 29ns/285ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 78ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封裝: TO-247-3

NTE3322

NTE Electronics, Inc

IGBT 900V 60A TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 900 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
• Power - Max: 170 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 460ns/600ns
• Test Condition: -
• Reverse Recovery Time (trr): 2.5 µs
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封裝: -

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IXXH30N65B4D1

IXYS

IGBT 650V 70A TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 70 A
• Current - Collector Pulsed (Icm): 146 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 230 W
• Switching Energy: 1.04mJ (on), 730µJ (off)
• Input Type: Standard
• Gate Charge: 52 nC
• Td (on/off) @ 25°C: 20ns/150ns
• Test Condition: 400V, 30A, 15Ohm, 15V
• Reverse Recovery Time (trr): 65 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXXH)

封裝: -

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IGC54T65R3QEX1SA1

Infineon Technologies

IGBT CHIP

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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SIGC54T60R3EX1SA2

Infineon Technologies

IGBT TRENCH FS 600V 100A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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IXYN120N65B3D1

IXYS

IGBT PT 650V 250A SOT227B

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 250 A
• Current - Collector Pulsed (Icm): 770 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
• Power - Max: 830 W
• Switching Energy: 1.34mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 250 nC
• Td (on/off) @ 25°C: 30ns/168ns
• Test Condition: 400V, 50A, 2Ohm, 15V
• Reverse Recovery Time (trr): 28 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

封裝: -

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RJP30E2DPP-M0-T2

Renesas Electronics Corporation

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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RGT8NS65DGC9

Rohm Semiconductor

IGBT TRENCH FIELD 650V 8A TO262

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 8 A
• Current - Collector Pulsed (Icm): 12 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
• Power - Max: 65 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 13.5 nC
• Td (on/off) @ 25°C: 17ns/69ns
• Test Condition: 400V, 4A, 50Ohm, 15V
• Reverse Recovery Time (trr): 40 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
• Supplier Device Package: TO-262

封裝: -

RGT40TS65DGC13

Rohm Semiconductor

IGBT TRENCH FS 650V 40A TO247G

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 144 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 40 nC
• Td (on/off) @ 25°C: 22ns/75ns
• Test Condition: 400V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): 58 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247G

封裝: -