頁 142 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  142/158
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封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot SGW25N120
Infineon Technologies

IGBT 1200V 46A 313W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 46A
  • Current - Collector Pulsed (Icm): 84A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
  • Power - Max: 313W
  • Switching Energy: 3.7mJ
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 45ns/730ns
  • Test Condition: 800V, 25A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存812,376
1200V
46A
84A
3.6V @ 15V, 25A
313W
3.7mJ
Standard
225nC
45ns/730ns
800V, 25A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRG4BC10SDPBF
Infineon Technologies

IGBT 600V 14A 38W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 310µJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 76ns/815ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存15,780
600V
14A
18A
1.8V @ 15V, 8A
38W
310µJ (on), 3.28mJ (off)
Standard
15nC
76ns/815ns
480V, 8A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGD7NB120ST4
STMicroelectronics

IGBT 1200V 10A 55W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
  • Power - Max: 55W
  • Switching Energy: 3.2µJ (on), 15mJ (off)
  • Input Type: Standard
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 570ns/-
  • Test Condition: 960V, 7A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,376
1200V
10A
20A
2.1V @ 15V, 7A
55W
3.2µJ (on), 15mJ (off)
Standard
29nC
570ns/-
960V, 7A, 1 kOhm, 15V
-
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot ISL9V3036D3ST
Fairchild/ON Semiconductor

IGBT 360V 21A 150W TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存306,504
360V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
HGTP12N60A4
Fairchild/ON Semiconductor

IGBT 600V 54A 167W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 167W
  • Switching Energy: 55µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: 17ns/96ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存5,488
600V
54A
96A
2.7V @ 15V, 12A
167W
55µJ (on), 50µJ (off)
Standard
78nC
17ns/96ns
390V, 12A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
AIGW40N65H5XKSA1
Infineon Technologies

IGBT 650V TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,304
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGH30N120BD1
IXYS

IGBT 1200V 50A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存6,432
1200V
50A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
hot IXGH20N140C3H1
IXYS

IGBT 1400V 42A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 108A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: 1.35mJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 88nC
  • Td (on/off) @ 25°C: 19ns/110ns
  • Test Condition: 700V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存9,564
1400V
42A
108A
5V @ 15V, 20A
250W
1.35mJ (on), 440µJ (off)
Standard
88nC
19ns/110ns
700V, 20A, 5 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
APT20GN60BDQ1G
Microsemi Corporation

IGBT 600V 40A 136W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 136W
  • Switching Energy: 230µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 9ns/140ns
  • Test Condition: 400V, 20A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封裝: TO-247-3
庫存7,600
600V
40A
60A
1.9V @ 15V, 20A
136W
230µJ (on), 580µJ (off)
Standard
120nC
9ns/140ns
400V, 20A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
FGP5N60LS
Fairchild/ON Semiconductor

IGBT 600V 10A 83W TO220

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 36A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 12V, 14A
  • Power - Max: 83W
  • Switching Energy: 38µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.3nC
  • Td (on/off) @ 25°C: 4.3ns/36ns
  • Test Condition: 400V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: TO-220-3
庫存3,312
600V
10A
36A
3.2V @ 12V, 14A
83W
38µJ (on), 130µJ (off)
Standard
18.3nC
4.3ns/36ns
400V, 5A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot TIG064E8-TL-H
ON Semiconductor

IGBT 400V ECH8

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
封裝: 8-SMD, Flat Lead
庫存180,000
400V
-
150A
7V @ 2.5V, 100A
-
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
AOTF5B60D
Alpha & Omega Semiconductor Inc.

IGBT 600V 10A 31.2W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
  • Power - Max: 31.2W
  • Switching Energy: 140µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 9.4nC
  • Td (on/off) @ 25°C: 12ns/83ns
  • Test Condition: 400V, 5A, 60 Ohm, 15V
  • Reverse Recovery Time (trr): 98ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220-3F
封裝: TO-220-3 Full Pack
庫存6,256
600V
14A
20A
1.8V @ 15V, 5A
31.2W
140µJ (on), 40µJ (off)
Standard
9.4nC
12ns/83ns
400V, 5A, 60 Ohm, 15V
98ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220-3F
IKZ50N65EH5XKSA1
Infineon Technologies

IGBT 650V 50A CO-PACK TO-247-4

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 273W
  • Switching Energy: 410µJ (on), 190µJ (off)
  • Input Type: Standard
  • Gate Charge: 109nC
  • Td (on/off) @ 25°C: 20ns/250ns
  • Test Condition: 400V, 25A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4
封裝: TO-247-4
庫存7,872
650V
85A
200A
2.1V @ 15V, 50A
273W
410µJ (on), 190µJ (off)
Standard
109nC
20ns/250ns
400V, 25A, 12 Ohm, 15V
53ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4
APT70GR120L
Microsemi Corporation

IGBT 1200V 160A 961W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A
  • Power - Max: 961W
  • Switching Energy: 3.82mJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 544nC
  • Td (on/off) @ 25°C: 33ns/278ns
  • Test Condition: 600V, 70A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封裝: TO-264-3, TO-264AA
庫存6,528
1200V
160A
280A
3.2V @ 15V, 70A
961W
3.82mJ (on), 2.58mJ (off)
Standard
544nC
33ns/278ns
600V, 70A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
NGTG50N60FLWG
ON Semiconductor

IGBT 600V 50A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 223W
  • Switching Energy: 1.1mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 116ns/292ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存5,392
600V
100A
200A
1.9V @ 15V, 50A
223W
1.1mJ (on), 600µJ (off)
Standard
310nC
116ns/292ns
400V, 50A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot IRG4PC40KDPBF
Infineon Technologies

IGBT 600V 42A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 84A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
  • Power - Max: 160W
  • Switching Energy: 950µJ (on), 760µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 53ns/110ns
  • Test Condition: 480V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存69,084
600V
42A
84A
2.6V @ 15V, 25A
160W
950µJ (on), 760µJ (off)
Standard
120nC
53ns/110ns
480V, 25A, 10 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
STGP19NC60S
STMicroelectronics

IGBT 600V 40A 130W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A
  • Power - Max: 130W
  • Switching Energy: 135µJ (on), 815µJ (off)
  • Input Type: Standard
  • Gate Charge: 54.5nC
  • Td (on/off) @ 25°C: 17.5ns/175ns
  • Test Condition: 480V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: TO-220-3
庫存8,664
600V
40A
80A
1.9V @ 15V, 12A
130W
135µJ (on), 815µJ (off)
Standard
54.5nC
17.5ns/175ns
480V, 12A, 10 Ohm, 15V
-
-
Through Hole
TO-220-3
TO-220
RJP60F5DPK-01#T0
Renesas Electronics America

IGBT 600V 80A 260.4W

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 260.4W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 74nC
  • Td (on/off) @ 25°C: 53ns/90ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存7,904
600V
80A
160A
1.8V @ 15V, 40A
260.4W
-
Standard
74nC
53ns/90ns
400V, 30A, 5 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
FGA30N65SMD
Fairchild/ON Semiconductor

IGBT 650V 60A 300W TO3P-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 716µJ (on), 208µJ (off)
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 14ns/102ns
  • Test Condition: 400V, 30A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存7,944
650V
60A
90A
2.5V @ 15V, 30A
300W
716µJ (on), 208µJ (off)
Standard
87nC
14ns/102ns
400V, 30A, 6 Ohm, 15V
35ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
STGP30H65F
STMicroelectronics

IGBT 650V 60A 260W TO-220AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 350µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 50ns/160ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: TO-220-3
庫存20,568
650V
60A
120A
2.4V @ 15V, 30A
260W
350µJ (on), 400µJ (off)
Standard
105nC
50ns/160ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
IGW30N60TPXKSA1
Infineon Technologies

IGBT 600V 53A 200W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 53A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 710µJ (on), 420µJ (off)
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 15ns/179ns
  • Test Condition: 400V, 30A, 10.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存6,036
600V
53A
90A
1.8V @ 15V, 30A
200W
710µJ (on), 420µJ (off)
Standard
130nC
15ns/179ns
400V, 30A, 10.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKZ75N65EH5XKSA1
Infineon Technologies

IGBT 650V 90A W/DIO TO247-4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 395W
  • Switching Energy: 680µJ (on), 430µJ (off)
  • Input Type: Standard
  • Gate Charge: 166nC
  • Td (on/off) @ 25°C: 26ns/347ns
  • Test Condition: 400V, 37.5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4
封裝: TO-247-4
庫存6,972
650V
90A
300A
2.1V @ 15V, 75A
395W
680µJ (on), 430µJ (off)
Standard
166nC
26ns/347ns
400V, 37.5A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4
IXGF30N400
IXYS

IGBT 4000V 30A 160W I4-PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 4000V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 90A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
封裝: i4-Pac?-5 (3 leads)
庫存6,416
4000V
30A
360A
5.2V @ 15V, 90A
160W
-
Standard
135nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
HGTP6N40E1D
Harris Corporation

7.5A, 400V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 7.5 A
  • Current - Collector Pulsed (Icm): 7.5 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 3A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 6.9 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: -
Request a Quote
400 V
7.5 A
7.5 A
2.5V @ 10V, 3A
75 W
-
Standard
6.9 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
GT40QR21-STA1-E-D
Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 230 W
  • Switching Energy: -, 290µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: 280V, 40A, 10Ohm, 20V
  • Reverse Recovery Time (trr): 600 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
封裝: -
庫存228
1200 V
40 A
80 A
2.7V @ 15V, 40A
230 W
-, 290µJ (off)
Standard
-
-
280V, 40A, 10Ohm, 20V
600 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
FGHL50T65MQDT
onsemi

FS4 MID SPEED IGBT 650V 50A TO24

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 268 W
  • Switching Energy: 1.19mJ (on), 630µJ (off)
  • Input Type: Standard
  • Gate Charge: 99 nC
  • Td (on/off) @ 25°C: 21ns/90ns
  • Test Condition: 400V, 50A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 79 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: -
庫存1,350
650 V
80 A
200 A
1.8V @ 15V, 40A
268 W
1.19mJ (on), 630µJ (off)
Standard
99 nC
21ns/90ns
400V, 50A, 6Ohm, 15V
79 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RJP4003ASA-00-Q0
Renesas Electronics Corporation

IGBTS, 400V, 150A, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGTH00TK65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 35A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 35 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 72 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封裝: -
庫存1,209
650 V
35 A
200 A
2.1V @ 15V, 50A
72 W
-
Standard
94 nC
39ns/143ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM