電晶體 - IGBT - 單

IRG7CH46UEF

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IRGPC40UD2

Infineon Technologies

IGBT W/DIODE 600V 40A TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
• Power - Max: 160W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

IXGT32N60BD1

IXYS

IGBT 600V 60A 200W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
• Power - Max: 200W
• Switching Energy: 600µJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 25ns/100ns
• Test Condition: 480V, 32A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGA120N30TC

IXYS

IGBT 300V 120A 250W TO263AA

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
• Power - Max: 250W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 134nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FGA25N120FTD

Fairchild/ON Semiconductor

IGBT 1200V 50A 313W TO3P

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
• Power - Max: 313W
• Switching Energy: 340µJ (on), 900µJ (off)
• Input Type: Standard
• Gate Charge: 160nC
• Td (on/off) @ 25°C: 48ns/210ns
• Test Condition: 600V, 25A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 770ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

封裝: TO-3P-3, SC-65-3

STGP3NB60FD

STMicroelectronics

IGBT 600V 6A 68W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 6A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
• Power - Max: 68W
• Switching Energy: 125µJ (off)
• Input Type: Standard
• Gate Charge: 16nC
• Td (on/off) @ 25°C: 12.5ns/105ns
• Test Condition: 480V, 3A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 45ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IXGH24N60A

IXYS

IGBT 600V 48A 150W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

IKQ50N120CT2XKSA1

Infineon Technologies

IGBT HS SW 1200V 50A TO-247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
• Power - Max: 652W
• Switching Energy: 3.8mJ (on), 3.3mJ (off)
• Input Type: Standard
• Gate Charge: 235nC
• Td (on/off) @ 25°C: 34ns/312ns
• Test Condition: 400V, 50A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-46

封裝: TO-247-3

AIHD06N60RATMA1

Infineon Technologies

IC DISCRETE 600V TO252-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
• Power - Max: 100W
• Switching Energy: 110µJ (on), 220µJ (off)
• Input Type: Standard
• Gate Charge: 48nC
• Td (on/off) @ 25°C: 12ns/127ns
• Test Condition: 400V, 6A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IXXH75N60C3

IXYS

IGBT 600V 150A 750W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
• Power - Max: 750W
• Switching Energy: 1.6mJ (on), 800µJ (off)
• Input Type: Standard
• Gate Charge: 107nC
• Td (on/off) @ 25°C: 35ns/90ns
• Test Condition: 400V, 60A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXXH)

封裝: TO-247-3

HGTG40N60B3

Fairchild/ON Semiconductor

IGBT 600V 70A 290W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 330A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 290W
• Switching Energy: 1.05mJ (on), 800µJ (off)
• Input Type: Standard
• Gate Charge: 250nC
• Td (on/off) @ 25°C: 47ns/170ns
• Test Condition: 480V, 40A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封裝: TO-247-3

NGTB15N120IHWG

ON Semiconductor

IGBT 15A 1200V TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
• Power - Max: 278W
• Switching Energy: 360µJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: -/130ns
• Test Condition: 600V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封裝: TO-247-3

SLA5227

Sanken

IGBT 600V 30A PFC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 12-SIP, Exposed Tab
• Supplier Device Package: 12-SIP

封裝: 12-SIP, Exposed Tab

IXYH10N170CV1

IXYS

IGBT 1.7KV 36A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 36A
• Current - Collector Pulsed (Icm): 84A
• Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
• Power - Max: 280W
• Switching Energy: 1.4mJ (on), 700µJ (off)
• Input Type: Standard
• Gate Charge: 46nC
• Td (on/off) @ 25°C: 14ns/130ns
• Test Condition: 850V, 10A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 160ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

封裝: TO-247-3

APT15GT120BRG

Microsemi Corporation

IGBT 1200V 36A 250W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 36A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
• Power - Max: 250W
• Switching Energy: 585µJ (on), 260µJ (off)
• Input Type: Standard
• Gate Charge: 105nC
• Td (on/off) @ 25°C: 10ns/85ns
• Test Condition: 800V, 15A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

封裝: TO-247-3

IXGA20N120A3

IXYS

IGBT 1200V 40A 180W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 180W
• Switching Energy: 2.85mJ (on), 6.47mJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 16ns/290ns
• Test Condition: 960V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRGPS40B120UPBF

Infineon Technologies

IGBT 1200V 80A 595W SUPER247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 3.71V @ 15V, 50A
• Power - Max: 595W
• Switching Energy: 1.4mJ (on), 1.65mJ (off)
• Input Type: Standard
• Gate Charge: 340nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 40A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-274AA
• Supplier Device Package: SUPER-247 (TO-274AA)

封裝: TO-274AA

NGTG50N60FWG

ON Semiconductor

IGBT 600V 100A 223W TO247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
• Power - Max: 223W
• Switching Energy: 1.1mJ (on), 1.2mJ (off)
• Input Type: Standard
• Gate Charge: 310nC
• Td (on/off) @ 25°C: 117ns/285ns
• Test Condition: 400V, 50A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封裝: TO-247-3

IXYA15N65C3D1

IXYS

IGBT PT 650V 38A TO263AA

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 38 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: 200 W
• Switching Energy: 270µJ (on), 230µJ (off)
• Input Type: Standard
• Gate Charge: 19 nC
• Td (on/off) @ 25°C: 15ns/68ns
• Test Condition: 400V, 15A, 20Ohm, 15V
• Reverse Recovery Time (trr): 20 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA

封裝: -

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STGWA50HP65FB2

STMicroelectronics

IGBT TRENCH FS 650V 86A TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 86 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 272 W
• Switching Energy: 580µJ (off)
• Input Type: Standard
• Gate Charge: 151 nC
• Td (on/off) @ 25°C: -/115ns
• Test Condition: 400V, 50A, 4.7Ohm, 15V
• Reverse Recovery Time (trr): 140 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 Long Leads

封裝: -

IGT6D21

Harris Corporation

20A, 400V IGBT FOR MOTOR DRIVE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Current - Collector (Ic) (Max): 32 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3

封裝: -

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IXG50I4500KN

IXYS

IGBT PT 4500V 74A ISOPLUS264

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 4500 V
• Current - Collector (Ic) (Max): 74 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS264™
• Supplier Device Package: ISOPLUS264™

封裝: -

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RGCL80TK60GC11

Rohm Semiconductor

IGBT TRNCH FIELD 600V 35A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 35 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
• Power - Max: 57 W
• Switching Energy: 1.11mJ (on), 1.68mJ (off)
• Input Type: Standard
• Gate Charge: 98 nC
• Td (on/off) @ 25°C: 53ns/227ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

封裝: -

IXYP20N65B3D1

IXYS

IGBT PT 650V 58A TO220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 58 A
• Current - Collector Pulsed (Icm): 108 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 230 W
• Switching Energy: 500µJ (on), 450µJ (off)
• Input Type: Standard
• Gate Charge: 29 nC
• Td (on/off) @ 25°C: 12ns/103ns
• Test Condition: 400V, 20A, 20Ohm, 15V
• Reverse Recovery Time (trr): 25 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封裝: -

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SIGC10T60EX1SA3

Infineon Technologies

IGBT TRENCH FS 600V 20A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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IXYP24N100A4

IXYS

IGBT DISCRETE TO-220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1000 V
• Current - Collector (Ic) (Max): 85 A
• Current - Collector Pulsed (Icm): 145 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
• Power - Max: 375 W
• Switching Energy: 3.5mJ (on), 2.3mJ (off)
• Input Type: Standard
• Gate Charge: 44 nC
• Td (on/off) @ 25°C: 13ns/216ns
• Test Condition: 800V, 24A, 10Ohm, 15V
• Reverse Recovery Time (trr): 47 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220 (IXYP)

封裝: -

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IKU04N60R

Infineon Technologies

IGBT TRENCH 600V 8A TO251-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 8 A
• Current - Collector Pulsed (Icm): 12 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
• Power - Max: 75 W
• Switching Energy: 240µJ
• Input Type: Standard
• Gate Charge: 27 nC
• Td (on/off) @ 25°C: 14ns/146ns
• Test Condition: 400V, 4A, 43Ohm, 15V
• Reverse Recovery Time (trr): 43 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
• Supplier Device Package: PG-TO251-3

封裝: -

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IKP20N60H3XKSA1

Infineon Technologies

IGBT 600V 40A 170W TO220-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 170 W
• Switching Energy: 690µJ
• Input Type: Standard
• Gate Charge: 120 nC
• Td (on/off) @ 25°C: 16ns/194ns
• Test Condition: 400V, 20A, 14.6Ohm, 15V
• Reverse Recovery Time (trr): 112 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

封裝: -

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