電晶體 - IGBT - 單

IRGH4607DPBF

Infineon Technologies

IGBT 600V 8PQFN

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IRGP4760D-EPBF

Infineon Technologies

IGBT 650V TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 144A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
• Power - Max: 325W
• Switching Energy: 1.7mJ (on), 1mJ (off)
• Input Type: Standard
• Gate Charge: 145nC
• Td (on/off) @ 25°C: 70ns/140ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封裝: TO-247-3

IRG4BC20K-STRLP

Infineon Technologies

IGBT 600V 16A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 32A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
• Power - Max: 60W
• Switching Energy: 150µJ (on), 250µJ (off)
• Input Type: Standard
• Gate Charge: 34nC
• Td (on/off) @ 25°C: 28ns/150ns
• Test Condition: 480V, 9A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXSH24N60AU1

IXYS

IGBT 600V 48A 150W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
• Power - Max: 150W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 75nC
• Td (on/off) @ 25°C: 100ns/450ns
• Test Condition: 480V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

封裝: TO-247-3

IXGR39N60B

IXYS

IGBT 600V 66A 140W ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 66A
• Current - Collector Pulsed (Icm): 152A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 39A
• Power - Max: 140W
• Switching Energy: 4mJ (off)
• Input Type: Standard
• Gate Charge: 125nC
• Td (on/off) @ 25°C: 25ns/250ns
• Test Condition: 480V, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

封裝: ISOPLUS247?

IXGA7N60CD1

IXYS

IGBT 600V 14A 75W TO263

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
• Power - Max: 75W
• Switching Energy: 120µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 10ns/65ns
• Test Condition: 480V, 7A, 18 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IKY50N120CH3XKSA1

Infineon Technologies

IGBT PRODUCTS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IXYL60N450

IXYS

IGBT 4500V 90A 417W I5-PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 4500V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 680A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
• Power - Max: 417W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 366nC
• Td (on/off) @ 25°C: 55ns/450ns
• Test Condition: 960V, 60A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUSi5-Pak?
• Supplier Device Package: ISOPLUSi5-Pak?

封裝: ISOPLUSi5-Pak?

IXYK140N90C3

IXYS

IGBT 900V 310A 1630W TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 310A
• Current - Collector Pulsed (Icm): 840A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
• Power - Max: 1630W
• Switching Energy: 4.3mJ (on), 4mJ (off)
• Input Type: Standard
• Gate Charge: 330nC
• Td (on/off) @ 25°C: 40ns/145ns
• Test Condition: 450V, 100A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXYK)

封裝: TO-264-3, TO-264AA

NGTB50N65FL2WG

ON Semiconductor

IGBT 600V 50A TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 417W
• Switching Energy: 1.5mJ (on), 460µJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 100ns/237ns
• Test Condition: 400V, 50A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 94ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封裝: TO-247-3

RJP60F4DPM-00#T1

Renesas Electronics America

IGBT 600V 60A 41.2W TO-3PFM

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
• Power - Max: 41.2W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 45ns/70ns
• Test Condition: 400V, 30A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

封裝: TO-3PFM, SC-93-3

STGD7NB60KT4

STMicroelectronics

IGBT 600V 14A 70W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 56A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A
• Power - Max: 70W
• Switching Energy: 95µJ (on), 140µJ (off)
• Input Type: Standard
• Gate Charge: 32.7nC
• Td (on/off) @ 25°C: 15ns/50ns
• Test Condition: 480V, 7A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IRG4BC20KD-SPBF

Infineon Technologies

IGBT 600V 16A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 32A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
• Power - Max: 60W
• Switching Energy: 340µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 34nC
• Td (on/off) @ 25°C: 54ns/180ns
• Test Condition: 480V, 9A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IKP15N65H5XKSA1

Infineon Technologies

IGBT 650V 30A 105W PG-TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 105W
• Switching Energy: 120µJ (on), 50µJ (off)
• Input Type: Standard
• Gate Charge: 38nC
• Td (on/off) @ 25°C: 17ns/160ns
• Test Condition: 400V, 7.5A, 39 Ohm, 15V
• Reverse Recovery Time (trr): 48ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO-220-3

封裝: TO-220-3

IXXH50N60C3D1

IXYS

IGBT 600V 100A 600W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
• Power - Max: 600W
• Switching Energy: 720µJ (on), 330µJ (off)
• Input Type: Standard
• Gate Charge: 64nC
• Td (on/off) @ 25°C: 24ns/62ns
• Test Condition: 360V, 36A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXXH)

封裝: TO-247-3

IGD06N60TATMA1

Infineon Technologies

IGBT 600V 12A 88W TO252-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
• Power - Max: 88W
• Switching Energy: 200µJ
• Input Type: Standard
• Gate Charge: 42nC
• Td (on/off) @ 25°C: 9ns/130ns
• Test Condition: 400V, 6A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

STGFW30V60DF

STMicroelectronics

IGBT 600V 60A 58W TO-3PF

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
• Power - Max: 58W
• Switching Energy: 383µJ (on), 233µJ (off)
• Input Type: Standard
• Gate Charge: 163nC
• Td (on/off) @ 25°C: 45ns/189ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 53ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF

封裝: TO-3P-3 Full Pack

IKW75N60H3FKSA1

Infineon Technologies

IGBT 600V 80A 428W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
• Power - Max: 428W
• Switching Energy: 3mJ (on), 1.7mJ (off)
• Input Type: Standard
• Gate Charge: 470nC
• Td (on/off) @ 25°C: 31ns/265ns
• Test Condition: 400V, 75A, 5.2 Ohm, 15V
• Reverse Recovery Time (trr): 190ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: TO-247-3

IKW30N65EL5XKSA1

Infineon Technologies

IGBT 650V 30A FAST DIODE TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
• Power - Max: 227W
• Switching Energy: 470µJ (on), 1.35mJ (off)
• Input Type: Standard
• Gate Charge: 168nC
• Td (on/off) @ 25°C: 33ns/308ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: TO-247-3

STGP7NC60HD

STMicroelectronics

IGBT 600V 25A 80W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 25A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
• Power - Max: 80W
• Switching Energy: 95µJ (on), 115µJ (off)
• Input Type: Standard
• Gate Charge: 35nC
• Td (on/off) @ 25°C: 18.5ns/72ns
• Test Condition: 390V, 7A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IXXP12N65B4D1

IXYS

IGBT 650V 38A TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 38 A
• Current - Collector Pulsed (Icm): 70 A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
• Power - Max: 160 W
• Switching Energy: 440µJ (on), 220µJ (off)
• Input Type: Standard
• Gate Charge: 34 nC
• Td (on/off) @ 25°C: 13ns/158ns
• Test Condition: 400V, 12A, 20Ohm, 15V
• Reverse Recovery Time (trr): 43 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

封裝: -

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IRGC4274B

Infineon Technologies

IGBT CHIP

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 310 nC
• Td (on/off) @ 25°C: 95ns/220ns
• Test Condition: 400V, 150A, 5Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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IGC70T120T8RQ

Infineon Technologies

IGBT 1200V 75A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 225 A
• Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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FGH40T100SMD-F155

onsemi

IGBT TRENCH FS 1000V 80A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1000 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 333 W
• Switching Energy: 2.35mJ (on), 1.15mJ (off)
• Input Type: Standard
• Gate Charge: 398 nC
• Td (on/off) @ 25°C: 29ns/285ns
• Test Condition: 600V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 78 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封裝: -

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IXGA48N60B3-TRL

IXYS

IXGA48N60B3 TRL

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 48 A
• Current - Collector Pulsed (Icm): 280 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
• Power - Max: 300 W
• Switching Energy: 840µJ (on), 660µJ (off)
• Input Type: Standard
• Gate Charge: 115 nC
• Td (on/off) @ 25°C: 22ns/130ns
• Test Condition: 480V, 30A, 5Ohm, 15V
• Reverse Recovery Time (trr): 25 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

封裝: -

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RJP3053DPP-A9-T2F

Renesas Electronics Corporation

HIGH SPEED IGBT, 300V, 30A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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IGW40T120FKSA1

Infineon Technologies

IGBT NPT FS 1200V 75A TO247-3

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 75 A
• Current - Collector Pulsed (Icm): 105 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 270 W
• Switching Energy: 6.5mJ
• Input Type: Standard
• Gate Charge: 203 nC
• Td (on/off) @ 25°C: 48ns/480ns
• Test Condition: 600V, 40A, 15Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-1

封裝: -

IKY40N120CS6XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 80A TO247-4

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
• Power - Max: 500 W
• Switching Energy: 1.45mJ (on), 1.55mJ (off)
• Input Type: Standard
• Gate Charge: 285 nC
• Td (on/off) @ 25°C: 27ns/315ns
• Test Condition: 600V, 40A, 9Ohm, 15V
• Reverse Recovery Time (trr): 255 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: PG-TO247-4-2

封裝: -