頁 115 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  115/158
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數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PH42UD2-EP
Infineon Technologies

IGBT 1200V 60A 321W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 30A
  • Power - Max: 321W
  • Switching Energy: 1.32mJ (off)
  • Input Type: Standard
  • Gate Charge: 234nC
  • Td (on/off) @ 25°C: -/233ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存4,336
1200V
60A
90A
2.02V @ 15V, 30A
321W
1.32mJ (off)
Standard
234nC
-/233ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IRGS4045DPBF
Infineon Technologies

IGBT 600V 12A 77W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.5nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存30,000
600V
12A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
19.5nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IXGH30N60B2D1
IXYS

IGBT 600V 70A 190W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: 13ns/110ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存38,316
600V
70A
150A
1.8V @ 15V, 24A
190W
320µJ (off)
Standard
66nC
13ns/110ns
400V, 24A, 5 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot NGB18N40CLBT4
ON Semiconductor

IGBT 430V 18A 115W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
  • Power - Max: 115W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,248
430V
18A
50A
2.5V @ 4V, 15A
115W
-
Logic
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IKA10N65ET6XKSA1
Infineon Technologies

IGBT 650V 10A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,608
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXA4IF1200TC
IXYS

IGBT 1200V 9A 45W TO252AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
  • Power - Max: 45W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 3A, 330 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存6,592
1200V
9A
-
2.1V @ 15V, 3A
45W
400µJ (on), 300µJ (off)
Standard
12nC
-
600V, 3A, 330 Ohm, 15V
350ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268AA
IXGA12N60CD1
IXYS

IGBT 600V 24A 100W TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 20ns/60ns
  • Test Condition: 480V, 12A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,848
600V
24A
48A
2.7V @ 15V, 12A
100W
90µJ (off)
Standard
32nC
20ns/60ns
480V, 12A, 18 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
STGWT28IH125DF
STMicroelectronics

IGBT 1250V 60A 375W TO-3P

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1250V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
  • Power - Max: 375W
  • Switching Energy: 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 114nC
  • Td (on/off) @ 25°C: -/128ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存7,808
1250V
60A
120A
2.5V @ 15V, 25A
375W
720µJ (off)
Standard
114nC
-/128ns
600V, 25A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
STGW20H65FB
STMicroelectronics

IGBT 650V 40A 168W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 168W
  • Switching Energy: 77µJ (on), 170µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 30ns/139ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存4,496
650V
40A
80A
2V @ 15V, 20A
168W
77µJ (on), 170µJ (off)
Standard
120nC
30ns/139ns
400V, 20A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGPF50N30TTU
Fairchild/ON Semiconductor

IGBT 300V 46.8W TO220F

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 15A
  • Power - Max: 46.8W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 97nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
封裝: TO-220-3 Full Pack
庫存3,792
300V
-
120A
1.5V @ 15V, 15A
46.8W
-
Standard
97nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
APT43GA90BD30
Microsemi Corporation

IGBT 900V 78A 337W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 129A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
  • Power - Max: 337W
  • Switching Energy: 875µJ (on), 425µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 12ns/82ns
  • Test Condition: 600V, 25A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封裝: TO-247-3
庫存6,084
900V
78A
129A
3.1V @ 15V, 47A
337W
875µJ (on), 425µJ (off)
Standard
116nC
12ns/82ns
600V, 25A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT45GP120BG
Microsemi Corporation

IGBT 1200V 100A 625W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 170A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
  • Power - Max: 625W
  • Switching Energy: 900µJ (on), 904µJ (off)
  • Input Type: Standard
  • Gate Charge: 185nC
  • Td (on/off) @ 25°C: 18ns/102ns
  • Test Condition: 600V, 45A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封裝: TO-247-3
庫存4,304
1200V
100A
170A
3.9V @ 15V, 45A
625W
900µJ (on), 904µJ (off)
Standard
185nC
18ns/102ns
600V, 45A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
STGWA15H120DF2
STMicroelectronics

IGBT HB 1200V 15A HS TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
  • Power - Max: 259W
  • Switching Energy: 380µJ (on), 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 23ns/111ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 231ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存15,228
1200V
30A
60A
2.6V @ 15V, 15A
259W
380µJ (on), 370µJ (off)
Standard
67nC
23ns/111ns
600V, 15A, 10 Ohm, 15V
231ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGA40T65UQDF
Fairchild/ON Semiconductor

IGBT 650V 80A 231W TO3PN

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
  • Power - Max: 231W
  • Switching Energy: 989µJ (on), 310µJ (off)
  • Input Type: Standard
  • Gate Charge: 306nC
  • Td (on/off) @ 25°C: 32ns/271ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存7,452
650V
80A
120A
1.67V @ 15V, 40A
231W
989µJ (on), 310µJ (off)
Standard
306nC
32ns/271ns
400V, 40A, 6 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
STGY50NC60WD
STMicroelectronics

IGBT 600V 110A 278W MAX247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
  • Power - Max: 278W
  • Switching Energy: 365µJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 195nC
  • Td (on/off) @ 25°C: 52ns/240ns
  • Test Condition: 390V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: MAX247?
封裝: TO-247-3
庫存15,468
600V
110A
180A
2.6V @ 15V, 40A
278W
365µJ (on), 560µJ (off)
Standard
195nC
52ns/240ns
390V, 40A, 10 Ohm, 15V
55ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
MAX247?
AOK30B135W1
Alpha & Omega Semiconductor Inc.

IGBT 1350V 30A 170W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: 340W
  • Switching Energy: 1.47mJ (off)
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: -/129ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存7,524
1350V
60A
200A
2.2V @ 15V, 30A
340W
1.47mJ (off)
Standard
62nC
-/129ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
RGPR20NS43HRTL
Rohm Semiconductor

IGBT 460V 20A IGNITION LPDS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 460 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
  • Power - Max: 107 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 14 nC
  • Td (on/off) @ 25°C: 500ns/4µs
  • Test Condition: 300V, 8A, 100Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
封裝: -
庫存123
460 V
20 A
-
2.0V @ 5V, 10A
107 W
-
Standard
14 nC
500ns/4µs
300V, 8A, 100Ohm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
SIGC28T60EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
50 A
150 A
1.85V @ 15V, 50A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
RJH60D2DPP-A0-T2
Renesas Electronics Corporation

IGBT 600V 10A TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AFGY160T65SPD-B4
onsemi

IGBT TRENCH FS 650V 240A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 240 A
  • Current - Collector Pulsed (Icm): 480 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
  • Power - Max: 882 W
  • Switching Energy: 12.4mJ (on), 5.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 245 nC
  • Td (on/off) @ 25°C: 53ns/98ns
  • Test Condition: 400V, 160A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 132 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: -
庫存90
650 V
240 A
480 A
2.05V @ 15V, 160A
882 W
12.4mJ (on), 5.7mJ (off)
Standard
245 nC
53ns/98ns
400V, 160A, 5Ohm, 15V
132 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
SIGC81T60SNCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/450ns
  • Test Condition: 400V, 100A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
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600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
65ns/450ns
400V, 100A, 3.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGW60TS65DHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 64A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 64 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 178 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 36ns/107ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 87 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: -
庫存1,275
650 V
64 A
120 A
1.9V @ 15V, 30A
178 W
-
Standard
84 nC
36ns/107ns
400V, 15A, 10Ohm, 15V
87 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
FGAF30S65AQ
onsemi

IGBT 650V 30A TO-3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 83 W
  • Switching Energy: 515µJ (on), 140µJ (off)
  • Input Type: Standard
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 18ns/92ns
  • Test Condition: 400V, 15A, 13Ohm, 15V
  • Reverse Recovery Time (trr): 267 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF-3
封裝: -
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650 V
60 A
90 A
2.1V @ 15V, 30A
83 W
515µJ (on), 140µJ (off)
Standard
58 nC
18ns/92ns
400V, 15A, 13Ohm, 15V
267 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF-3
FGPF4633TU
onsemi

IGBT 330V 30.5W TO220F

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
  • Power - Max: 30.5 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 60 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3
封裝: -
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330 V
-
300 A
1.8V @ 15V, 70A
30.5 W
-
Standard
60 nC
-
-
-
-
Through Hole
TO-220-3 Full Pack
TO-220F-3
IXGT6N170A-TRL
IXYS

IGBT 1700V 6A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 14 A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
  • Power - Max: 75 W
  • Switching Energy: 590µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.5 nC
  • Td (on/off) @ 25°C: 46ns/220ns
  • Test Condition: 850V, 6A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: -
Request a Quote
1700 V
6 A
14 A
7V @ 15V, 3A
75 W
590µJ (on), 180µJ (off)
Standard
18.5 nC
46ns/220ns
850V, 6A, 33Ohm, 15V
40 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
IXG70IF1200NA
IXYS

IGBT PT 1200V 130A SOT227B

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 130 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封裝: -
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1200 V
130 A
-
-
-
-
Standard
-
-
-
-
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
RJP43F4ADPP-MB-T2F
Renesas Electronics Corporation

IGBT 430V, 40A FOR PLASMA TV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STGB20H65FB2
STMicroelectronics

IGBT 600V 40A 167W D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 147 W
  • Switching Energy: 265µJ (on), 214µJ (off)
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: 16ns/78.8ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封裝: -
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650 V
40 A
60 A
2.1V @ 15V, 20A
147 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)