頁 115 - 電晶體 - IGBT - 單 | 離散半導體產品

IRG7PH42UD2-EP

Infineon Technologies

IGBT 1200V 60A 321W TO247AC

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 30A
Power - Max: 321W
Switching Energy: 1.32mJ (off)
Input Type: Standard
Gate Charge: 234nC
Td (on/off) @ 25°C: -/233ns
Test Condition: 600V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

封裝: TO-247-3

庫存4,336

1200V

60A

90A

2.02V @ 15V, 30A

321W

1.32mJ (off)

Standard

234nC

-/233ns

600V, 30A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD

IRGS4045DPBF

Infineon Technologies

IGBT 600V 12A 77W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 12A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Power - Max: 77W
Switching Energy: 56µJ (on), 122µJ (off)
Input Type: Standard
Gate Charge: 19.5nC
Td (on/off) @ 25°C: 27ns/75ns
Test Condition: 400V, 6A, 47 Ohm, 15V
Reverse Recovery Time (trr): 74ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存30,000

600V

12A

18A

2V @ 15V, 6A

77W

56µJ (on), 122µJ (off)

Standard

19.5nC

27ns/75ns

400V, 6A, 47 Ohm, 15V

74ns

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

IXGH30N60B2D1

IXYS

IGBT 600V 70A 190W TO247AD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Power - Max: 190W
Switching Energy: 320µJ (off)
Input Type: Standard
Gate Charge: 66nC
Td (on/off) @ 25°C: 13ns/110ns
Test Condition: 400V, 24A, 5 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

庫存38,316

600V

70A

150A

1.8V @ 15V, 24A

190W

320µJ (off)

Standard

66nC

13ns/110ns

400V, 24A, 5 Ohm, 15V

25ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

NGB18N40CLBT4

ON Semiconductor

IGBT 430V 18A 115W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 430V
Current - Collector (Ic) (Max): 18A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
Power - Max: 115W
Switching Energy: -
Input Type: Logic
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,248

430V

18A

50A

2.5V @ 4V, 15A

115W

-

Logic

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

IKA10N65ET6XKSA1

Infineon Technologies

IGBT 650V 10A TO220-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,608

-

IXA4IF1200TC

IXYS

IGBT 1200V 9A 45W TO252AA

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 9A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Power - Max: 45W
Switching Energy: 400µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: 12nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 3A, 330 Ohm, 15V
Reverse Recovery Time (trr): 350ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

庫存6,592

1200V

9A

-

2.1V @ 15V, 3A

45W

400µJ (on), 300µJ (off)

Standard

12nC

-

600V, 3A, 330 Ohm, 15V

350ns

-40°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268AA

IXGA12N60CD1

IXYS

IGBT 600V 24A 100W TO263AA

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 48A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 100W
Switching Energy: 90µJ (off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 480V, 12A, 18 Ohm, 15V
Reverse Recovery Time (trr): 35ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXGA)

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,848

600V

24A

48A

2.7V @ 15V, 12A

100W

90µJ (off)

Standard

32nC

20ns/60ns

480V, 12A, 18 Ohm, 15V

35ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (IXGA)

STGWT28IH125DF

STMicroelectronics

IGBT 1250V 60A 375W TO-3P

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1250V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Power - Max: 375W
Switching Energy: 720µJ (off)
Input Type: Standard
Gate Charge: 114nC
Td (on/off) @ 25°C: -/128ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

封裝: TO-3P-3, SC-65-3

庫存7,808

1250V

60A

120A

2.5V @ 15V, 25A

375W

720µJ (off)

Standard

114nC

-/128ns

600V, 25A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

STGW20H65FB

STMicroelectronics

IGBT 650V 40A 168W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Power - Max: 168W
Switching Energy: 77µJ (on), 170µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 30ns/139ns
Test Condition: 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: TO-247-3

庫存4,496

650V

40A

80A

2V @ 15V, 20A

168W

77µJ (on), 170µJ (off)

Standard

120nC

30ns/139ns

400V, 20A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

FGPF50N30TTU

Fairchild/ON Semiconductor

IGBT 300V 46.8W TO220F

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 15A
Power - Max: 46.8W
Switching Energy: -
Input Type: Standard
Gate Charge: 97nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

封裝: TO-220-3 Full Pack

庫存3,792

300V

-

120A

1.5V @ 15V, 15A

46.8W

-

Standard

97nC

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

APT43GA90BD30

Microsemi Corporation

IGBT 900V 78A 337W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 129A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Power - Max: 337W
Switching Energy: 875µJ (on), 425µJ (off)
Input Type: Standard
Gate Charge: 116nC
Td (on/off) @ 25°C: 12ns/82ns
Test Condition: 600V, 25A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

封裝: TO-247-3

庫存6,084

900V

78A

129A

3.1V @ 15V, 47A

337W

875µJ (on), 425µJ (off)

Standard

116nC

12ns/82ns

600V, 25A, 4.7 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247 [B]

APT45GP120BG

Microsemi Corporation

IGBT 1200V 100A 625W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 170A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Power - Max: 625W
Switching Energy: 900µJ (on), 904µJ (off)
Input Type: Standard
Gate Charge: 185nC
Td (on/off) @ 25°C: 18ns/102ns
Test Condition: 600V, 45A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

封裝: TO-247-3

庫存4,304

1200V

100A

170A

3.9V @ 15V, 45A

625W

900µJ (on), 904µJ (off)

Standard

185nC

18ns/102ns

600V, 45A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247 [B]

STGWA15H120DF2

STMicroelectronics

IGBT HB 1200V 15A HS TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Power - Max: 259W
Switching Energy: 380µJ (on), 370µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 23ns/111ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): 231ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: TO-247-3

庫存15,228

1200V

30A

60A

2.6V @ 15V, 15A

259W

380µJ (on), 370µJ (off)

Standard

67nC

23ns/111ns

600V, 15A, 10 Ohm, 15V

231ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

FGA40T65UQDF

Fairchild/ON Semiconductor

IGBT 650V 80A 231W TO3PN

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Power - Max: 231W
Switching Energy: 989µJ (on), 310µJ (off)
Input Type: Standard
Gate Charge: 306nC
Td (on/off) @ 25°C: 32ns/271ns
Test Condition: 400V, 40A, 6 Ohm, 15V
Reverse Recovery Time (trr): 89ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN

封裝: TO-3P-3, SC-65-3

庫存7,452

650V

80A

120A

1.67V @ 15V, 40A

231W

989µJ (on), 310µJ (off)

Standard

306nC

32ns/271ns

400V, 40A, 6 Ohm, 15V

89ns

-55°C ~ 175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3PN

STGY50NC60WD

STMicroelectronics

IGBT 600V 110A 278W MAX247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 110A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Power - Max: 278W
Switching Energy: 365µJ (on), 560µJ (off)
Input Type: Standard
Gate Charge: 195nC
Td (on/off) @ 25°C: 52ns/240ns
Test Condition: 390V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 55ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: MAX247?

封裝: TO-247-3

庫存15,468

600V

110A

180A

2.6V @ 15V, 40A

278W

365µJ (on), 560µJ (off)

Standard

195nC

52ns/240ns

390V, 40A, 10 Ohm, 15V

55ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

MAX247?

AOK30B135W1

Alpha & Omega Semiconductor Inc.

IGBT 1350V 30A 170W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1350V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Power - Max: 340W
Switching Energy: 1.47mJ (off)
Input Type: Standard
Gate Charge: 62nC
Td (on/off) @ 25°C: -/129ns
Test Condition: 600V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: TO-247-3

庫存7,524

1350V

60A

200A

2.2V @ 15V, 30A

340W

1.47mJ (off)

Standard

62nC

-/129ns

600V, 30A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

RGPR20NS43HRTL

Rohm Semiconductor

IGBT 460V 20A IGNITION LPDS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 460 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Power - Max: 107 W
Switching Energy: -
Input Type: Standard
Gate Charge: 14 nC
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS

封裝: -

庫存123

460 V

20 A

-

2.0V @ 5V, 10A

107 W

-

Standard

14 nC

500ns/4µs

300V, 8A, 100Ohm, 5V

-

-40°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

LPDS

SIGC28T60EX7SA1

Infineon Technologies

IGBT TRENCH FS 600V 50A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

600 V

50 A

150 A

1.85V @ 15V, 50A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

RJH60D2DPP-A0-T2

Renesas Electronics Corporation

IGBT 600V 10A TO-220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

AFGY160T65SPD-B4

onsemi

IGBT TRENCH FS 650V 240A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 240 A
Current - Collector Pulsed (Icm): 480 A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Power - Max: 882 W
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Input Type: Standard
Gate Charge: 245 nC
Td (on/off) @ 25°C: 53ns/98ns
Test Condition: 400V, 160A, 5Ohm, 15V
Reverse Recovery Time (trr): 132 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: -

庫存90

650 V

240 A

480 A

2.05V @ 15V, 160A

882 W

12.4mJ (on), 5.7mJ (off)

Standard

245 nC

53ns/98ns

400V, 160A, 5Ohm, 15V

132 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

SIGC81T60SNCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 65ns/450ns
Test Condition: 400V, 100A, 3.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

600 V

100 A

300 A

2.5V @ 15V, 100A

-

Standard

-

65ns/450ns

400V, 100A, 3.3Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

RGW60TS65DHRC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 64A TO247N

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 64 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Power - Max: 178 W
Switching Energy: -
Input Type: Standard
Gate Charge: 84 nC
Td (on/off) @ 25°C: 36ns/107ns
Test Condition: 400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr): 87 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247N

封裝: -

庫存1,275

650 V

64 A

120 A

1.9V @ 15V, 30A

178 W

-

Standard

84 nC

36ns/107ns

400V, 15A, 10Ohm, 15V

87 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247N

FGAF30S65AQ

onsemi

IGBT 650V 30A TO-3PF

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Power - Max: 83 W
Switching Energy: 515µJ (on), 140µJ (off)
Input Type: Standard
Gate Charge: 58 nC
Td (on/off) @ 25°C: 18ns/92ns
Test Condition: 400V, 15A, 13Ohm, 15V
Reverse Recovery Time (trr): 267 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PF-3

封裝: -

Request a Quote

650 V

60 A

90 A

2.1V @ 15V, 30A

83 W

515µJ (on), 140µJ (off)

Standard

58 nC

18ns/92ns

400V, 15A, 13Ohm, 15V

267 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3PF-3

FGPF4633TU

onsemi

IGBT 330V 30.5W TO220F

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Power - Max: 30.5 W
Switching Energy: -
Input Type: Standard
Gate Charge: 60 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-3

封裝: -

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330 V

-

300 A

1.8V @ 15V, 70A

30.5 W

-

Standard

60 nC

-

Through Hole

TO-220-3 Full Pack

TO-220F-3

IXGT6N170A-TRL

IXYS

IGBT 1700V 6A TO268

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 6 A
Current - Collector Pulsed (Icm): 14 A
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Power - Max: 75 W
Switching Energy: 590µJ (on), 180µJ (off)
Input Type: Standard
Gate Charge: 18.5 nC
Td (on/off) @ 25°C: 46ns/220ns
Test Condition: 850V, 6A, 33Ohm, 15V
Reverse Recovery Time (trr): 40 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

封裝: -

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1700 V

6 A

14 A

7V @ 15V, 3A

75 W

590µJ (on), 180µJ (off)

Standard

18.5 nC

46ns/220ns

850V, 6A, 33Ohm, 15V

40 ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

TO-268

IXG70IF1200NA

IXYS

IGBT PT 1200V 130A SOT227B

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 130 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

封裝: -

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1200 V

130 A

-

Standard

-

Chassis Mount

SOT-227-4, miniBLOC

SOT-227B

RJP43F4ADPP-MB-T2F

Renesas Electronics Corporation

IGBT 430V, 40A FOR PLASMA TV

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

STGB20H65FB2

STMicroelectronics

IGBT 600V 40A 167W D2PAK

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Power - Max: 147 W
Switching Energy: 265µJ (on), 214µJ (off)
Input Type: Standard
Gate Charge: 56 nC
Td (on/off) @ 25°C: 16ns/78.8ns
Test Condition: 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)

封裝: -

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650 V

40 A

60 A

2.1V @ 15V, 20A

147 W

265µJ (on), 214µJ (off)

Standard

56 nC

16ns/78.8ns

400V, 20A, 10Ohm, 15V

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263 (D2PAK)

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7PH42UD2-EP	Infineon Technologies	IGBT 1200V 60A 321W TO247AC IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 30A Power - Max: 321W Switching Energy: 1.32mJ (off) Input Type: Standard Gate Charge: 234nC Td (on/off) @ 25°C: -/233ns Test Condition: 600V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	封裝: TO-247-3	庫存4,336	1200V	60A	90A	2.02V @ 15V, 30A	321W	1.32mJ (off)	Standard	234nC	-/233ns	600V, 30A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD
IRGS4045DPBF	Infineon Technologies	IGBT 600V 12A 77W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 19.5nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47 Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存30,000	600V	12A	18A	2V @ 15V, 6A	77W	56µJ (on), 122µJ (off)	Standard	19.5nC	27ns/75ns	400V, 6A, 47 Ohm, 15V	74ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IXGH30N60B2D1	IXYS	IGBT 600V 70A 190W TO247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A Power - Max: 190W Switching Energy: 320µJ (off) Input Type: Standard Gate Charge: 66nC Td (on/off) @ 25°C: 13ns/110ns Test Condition: 400V, 24A, 5 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	封裝: TO-247-3	庫存38,316	600V	70A	150A	1.8V @ 15V, 24A	190W	320µJ (off)	Standard	66nC	13ns/110ns	400V, 24A, 5 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
NGB18N40CLBT4	ON Semiconductor	IGBT 430V 18A 115W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A Power - Max: 115W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,248	430V	18A	50A	2.5V @ 4V, 15A	115W	-	Logic	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IKA10N65ET6XKSA1	Infineon Technologies	IGBT 650V 10A TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,608	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXA4IF1200TC	IXYS	IGBT 1200V 9A 45W TO252AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A Power - Max: 45W Switching Energy: 400µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: - Test Condition: 600V, 3A, 330 Ohm, 15V Reverse Recovery Time (trr): 350ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA	封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	庫存6,592	1200V	9A	-	2.1V @ 15V, 3A	45W	400µJ (on), 300µJ (off)	Standard	12nC	-	600V, 3A, 330 Ohm, 15V	350ns	-40°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268AA
IXGA12N60CD1	IXYS	IGBT 600V 24A 100W TO263AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 90µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 20ns/60ns Test Condition: 480V, 12A, 18 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,848	600V	24A	48A	2.7V @ 15V, 12A	100W	90µJ (off)	Standard	32nC	20ns/60ns	480V, 12A, 18 Ohm, 15V	35ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
STGWT28IH125DF	STMicroelectronics	IGBT 1250V 60A 375W TO-3P IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1250V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A Power - Max: 375W Switching Energy: 720µJ (off) Input Type: Standard Gate Charge: 114nC Td (on/off) @ 25°C: -/128ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	封裝: TO-3P-3, SC-65-3	庫存7,808	1250V	60A	120A	2.5V @ 15V, 25A	375W	720µJ (off)	Standard	114nC	-/128ns	600V, 25A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
STGW20H65FB	STMicroelectronics	IGBT 650V 40A 168W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Power - Max: 168W Switching Energy: 77µJ (on), 170µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 30ns/139ns Test Condition: 400V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: TO-247-3	庫存4,496	650V	40A	80A	2V @ 15V, 20A	168W	77µJ (on), 170µJ (off)	Standard	120nC	30ns/139ns	400V, 20A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
FGPF50N30TTU	Fairchild/ON Semiconductor	IGBT 300V 46.8W TO220F IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 15A Power - Max: 46.8W Switching Energy: - Input Type: Standard Gate Charge: 97nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	封裝: TO-220-3 Full Pack	庫存3,792	300V	-	120A	1.5V @ 15V, 15A	46.8W	-	Standard	97nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
APT43GA90BD30	Microsemi Corporation	IGBT 900V 78A 337W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 129A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Power - Max: 337W Switching Energy: 875µJ (on), 425µJ (off) Input Type: Standard Gate Charge: 116nC Td (on/off) @ 25°C: 12ns/82ns Test Condition: 600V, 25A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	封裝: TO-247-3	庫存6,084	900V	78A	129A	3.1V @ 15V, 47A	337W	875µJ (on), 425µJ (off)	Standard	116nC	12ns/82ns	600V, 25A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
APT45GP120BG	Microsemi Corporation	IGBT 1200V 100A 625W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 170A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A Power - Max: 625W Switching Energy: 900µJ (on), 904µJ (off) Input Type: Standard Gate Charge: 185nC Td (on/off) @ 25°C: 18ns/102ns Test Condition: 600V, 45A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	封裝: TO-247-3	庫存4,304	1200V	100A	170A	3.9V @ 15V, 45A	625W	900µJ (on), 904µJ (off)	Standard	185nC	18ns/102ns	600V, 45A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
STGWA15H120DF2	STMicroelectronics	IGBT HB 1200V 15A HS TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A Power - Max: 259W Switching Energy: 380µJ (on), 370µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 23ns/111ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): 231ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: TO-247-3	庫存15,228	1200V	30A	60A	2.6V @ 15V, 15A	259W	380µJ (on), 370µJ (off)	Standard	67nC	23ns/111ns	600V, 15A, 10 Ohm, 15V	231ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
FGA40T65UQDF	Fairchild/ON Semiconductor	IGBT 650V 80A 231W TO3PN IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A Power - Max: 231W Switching Energy: 989µJ (on), 310µJ (off) Input Type: Standard Gate Charge: 306nC Td (on/off) @ 25°C: 32ns/271ns Test Condition: 400V, 40A, 6 Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	封裝: TO-3P-3, SC-65-3	庫存7,452	650V	80A	120A	1.67V @ 15V, 40A	231W	989µJ (on), 310µJ (off)	Standard	306nC	32ns/271ns	400V, 40A, 6 Ohm, 15V	89ns	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
STGY50NC60WD	STMicroelectronics	IGBT 600V 110A 278W MAX247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 110A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Power - Max: 278W Switching Energy: 365µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 195nC Td (on/off) @ 25°C: 52ns/240ns Test Condition: 390V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 55ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: MAX247?	封裝: TO-247-3	庫存15,468	600V	110A	180A	2.6V @ 15V, 40A	278W	365µJ (on), 560µJ (off)	Standard	195nC	52ns/240ns	390V, 40A, 10 Ohm, 15V	55ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	MAX247?
AOK30B135W1	Alpha & Omega Semiconductor Inc.	IGBT 1350V 30A 170W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 340W Switching Energy: 1.47mJ (off) Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: -/129ns Test Condition: 600V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存7,524	1350V	60A	200A	2.2V @ 15V, 30A	340W	1.47mJ (off)	Standard	62nC	-/129ns	600V, 30A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
RGPR20NS43HRTL	Rohm Semiconductor	IGBT 460V 20A IGNITION LPDS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 460 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Power - Max: 107 W Switching Energy: - Input Type: Standard Gate Charge: 14 nC Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS	封裝: -	庫存123	460 V	20 A	-	2.0V @ 5V, 10A	107 W	-	Standard	14 nC	500ns/4µs	300V, 8A, 100Ohm, 5V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPDS
SIGC28T60EX7SA1	Infineon Technologies	IGBT TRENCH FS 600V 50A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	600 V	50 A	150 A	1.85V @ 15V, 50A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
RJH60D2DPP-A0-T2	Renesas Electronics Corporation	IGBT 600V 10A TO-220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AFGY160T65SPD-B4	onsemi	IGBT TRENCH FS 650V 240A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 240 A Current - Collector Pulsed (Icm): 480 A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A Power - Max: 882 W Switching Energy: 12.4mJ (on), 5.7mJ (off) Input Type: Standard Gate Charge: 245 nC Td (on/off) @ 25°C: 53ns/98ns Test Condition: 400V, 160A, 5Ohm, 15V Reverse Recovery Time (trr): 132 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: -	庫存90	650 V	240 A	480 A	2.05V @ 15V, 160A	882 W	12.4mJ (on), 5.7mJ (off)	Standard	245 nC	53ns/98ns	400V, 160A, 5Ohm, 15V	132 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
SIGC81T60SNCX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 65ns/450ns Test Condition: 400V, 100A, 3.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	600 V	100 A	300 A	2.5V @ 15V, 100A	-	-	Standard	-	65ns/450ns	400V, 100A, 3.3Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
RGW60TS65DHRC11	Rohm Semiconductor	IGBT TRNCH FIELD 650V 64A TO247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 64 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 178 W Switching Energy: - Input Type: Standard Gate Charge: 84 nC Td (on/off) @ 25°C: 36ns/107ns Test Condition: 400V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 87 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	封裝: -	庫存1,275	650 V	64 A	120 A	1.9V @ 15V, 30A	178 W	-	Standard	84 nC	36ns/107ns	400V, 15A, 10Ohm, 15V	87 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
FGAF30S65AQ	onsemi	IGBT 650V 30A TO-3PF IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 83 W Switching Energy: 515µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 58 nC Td (on/off) @ 25°C: 18ns/92ns Test Condition: 400V, 15A, 13Ohm, 15V Reverse Recovery Time (trr): 267 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF-3	封裝: -	Request a Quote	650 V	60 A	90 A	2.1V @ 15V, 30A	83 W	515µJ (on), 140µJ (off)	Standard	58 nC	18ns/92ns	400V, 15A, 13Ohm, 15V	267 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PF-3
FGPF4633TU	onsemi	IGBT 330V 30.5W TO220F IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Power - Max: 30.5 W Switching Energy: - Input Type: Standard Gate Charge: 60 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-3	封裝: -	Request a Quote	330 V	-	300 A	1.8V @ 15V, 70A	30.5 W	-	Standard	60 nC	-	-	-	-	Through Hole	TO-220-3 Full Pack	TO-220F-3
IXGT6N170A-TRL	IXYS	IGBT 1700V 6A TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 6 A Current - Collector Pulsed (Icm): 14 A Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A Power - Max: 75 W Switching Energy: 590µJ (on), 180µJ (off) Input Type: Standard Gate Charge: 18.5 nC Td (on/off) @ 25°C: 46ns/220ns Test Condition: 850V, 6A, 33Ohm, 15V Reverse Recovery Time (trr): 40 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	封裝: -	Request a Quote	1700 V	6 A	14 A	7V @ 15V, 3A	75 W	590µJ (on), 180µJ (off)	Standard	18.5 nC	46ns/220ns	850V, 6A, 33Ohm, 15V	40 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	TO-268
IXG70IF1200NA	IXYS	IGBT PT 1200V 130A SOT227B IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 130 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	封裝: -	Request a Quote	1200 V	130 A	-	-	-	-	Standard	-	-	-	-	-	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
RJP43F4ADPP-MB-T2F	Renesas Electronics Corporation	IGBT 430V, 40A FOR PLASMA TV IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STGB20H65FB2	STMicroelectronics	IGBT 600V 40A 167W D2PAK IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 147 W Switching Energy: 265µJ (on), 214µJ (off) Input Type: Standard Gate Charge: 56 nC Td (on/off) @ 25°C: 16ns/78.8ns Test Condition: 400V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	封裝: -	Request a Quote	650 V	40 A	60 A	2.1V @ 15V, 20A	147 W	265µJ (on), 214µJ (off)	Standard	56 nC	16ns/78.8ns	400V, 20A, 10Ohm, 15V	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)