頁 101 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  101/158
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封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGS4630DTRRPBF
Infineon Technologies

IGBT 600V 47A 206W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 47A
  • Current - Collector Pulsed (Icm): 54A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
  • Power - Max: 206W
  • Switching Energy: 95µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 40ns/105ns
  • Test Condition: 400V, 18A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,648
600V
47A
54A
1.95V @ 15V, 18A
206W
95µJ (on), 350µJ (off)
Standard
35nC
40ns/105ns
400V, 18A, 22 Ohm, 15V
100ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IHW40T120FKSA1
Infineon Technologies

IGBT 1200V 75A 270W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 270W
  • Switching Energy: 6.5mJ
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 48ns/480ns
  • Test Condition: 600V, 40A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 195ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存5,840
1200V
75A
105A
2.3V @ 15V, 40A
270W
6.5mJ
Standard
203nC
48ns/480ns
600V, 40A, 15 Ohm, 15V
195ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IHW20T120FKSA1
Infineon Technologies

IGBT 1200V 40A 178W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 178W
  • Switching Energy: 1.8mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 50ns/560ns
  • Test Condition: 600V, 20A, 28 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存3,088
1200V
40A
60A
2.2V @ 15V, 20A
178W
1.8mJ (on), 1.5mJ (off)
Standard
120nC
50ns/560ns
600V, 20A, 28 Ohm, 15V
140ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRG4BC30W-STRL
Infineon Technologies

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 130µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 25ns/99ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,312
600V
23A
92A
2.7V @ 15V, 12A
100W
130µJ (on), 130µJ (off)
Standard
51nC
25ns/99ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4BC20W
Infineon Technologies

IGBT 600V 13A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 60µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: 22ns/110ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存6,368
600V
13A
52A
2.6V @ 15V, 6.5A
60W
60µJ (on), 80µJ (off)
Standard
26nC
22ns/110ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRG4BC40U
Infineon Technologies

IGBT 600V 40A 160W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 320µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 34ns/110ns
  • Test Condition: 480V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存13,224
600V
40A
160A
2.1V @ 15V, 20A
160W
320µJ (on), 350µJ (off)
Standard
100nC
34ns/110ns
480V, 25A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGB10NB37LZ
STMicroelectronics

IGBT 440V 20A 125W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
  • Power - Max: 125W
  • Switching Energy: 2.4mJ (on), 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 1.3µs/8µs
  • Test Condition: 328V, 10A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,632
440V
20A
40A
1.8V @ 4.5V, 10A
125W
2.4mJ (on), 5mJ (off)
Standard
28nC
1.3µs/8µs
328V, 10A, 1 kOhm, 5V
-
-65°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGK50N60A2U1
IXYS

IGBT 600V 75A 400W TO264AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
  • Power - Max: 400W
  • Switching Energy: 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 20ns/410ns
  • Test Condition: 480V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封裝: TO-264-3, TO-264AA
庫存4,480
600V
75A
200A
1.6V @ 15V, 50A
400W
3.5mJ (off)
Standard
140nC
20ns/410ns
480V, 50A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IXGA20N60B
IXYS

IGBT 600V 40A 150W TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 150µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 15ns/150ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存6,448
600V
40A
80A
2V @ 15V, 20A
150W
150µJ (on), 700µJ (off)
Standard
90nC
15ns/150ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
IXGT50N60B
IXYS

IGBT 600V 75A 300W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 50ns/150ns
  • Test Condition: 480V, 50A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存3,504
600V
75A
200A
2.3V @ 15V, 50A
300W
3mJ (off)
Standard
160nC
50ns/150ns
480V, 50A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
FGA90N30DTU
Fairchild/ON Semiconductor

IGBT 300V 90A 219W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
  • Power - Max: 219W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 21ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存2,544
300V
90A
220A
1.4V @ 15V, 20A
219W
-
Standard
87nC
-
-
21ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
FGA25N120ANDTU
Fairchild/ON Semiconductor

IGBT 1200V 40A 310W TO3P

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
  • Power - Max: 310W
  • Switching Energy: 4.8mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 60ns/170ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存4,576
1200V
40A
75A
3.2V @ 15V, 25A
310W
4.8mJ (on), 1mJ (off)
Standard
200nC
60ns/170ns
600V, 25A, 10 Ohm, 15V
350ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot IGW50N60T
Infineon Technologies

IGBT 600V 100A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存432,420
600V
100A
150A
2V @ 15V, 50A
333W
2.6mJ
Standard
310nC
26ns/299ns
400V, 50A, 7 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXGT16N170
IXYS

IGBT 1700V 32A 190W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 16A
  • Power - Max: 190W
  • Switching Energy: 9.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: 45ns/400ns
  • Test Condition: 1360V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存3,200
1700V
32A
80A
3.5V @ 15V, 16A
190W
9.3mJ (off)
Standard
78nC
45ns/400ns
1360V, 16A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot FGH75T65UPD
Fairchild/ON Semiconductor

IGBT 650V 150A 375W TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Power - Max: 375W
  • Switching Energy: 2.85mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 385nC
  • Td (on/off) @ 25°C: 32ns/166ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存24,336
650V
150A
225A
2.3V @ 15V, 75A
375W
2.85mJ (on), 1.2mJ (off)
Standard
385nC
32ns/166ns
400V, 75A, 3 Ohm, 15V
85ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot FGH75N60SFTU
Fairchild/ON Semiconductor

IGBT 600V 150A 452W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
  • Power - Max: 452W
  • Switching Energy: 2.7mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 250nC
  • Td (on/off) @ 25°C: 26ns/138ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存6,368
600V
150A
225A
2.9V @ 15V, 75A
452W
2.7mJ (on), 1mJ (off)
Standard
250nC
26ns/138ns
400V, 75A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IRGS4B60KD1TRLP
Infineon Technologies

IGBT 600V 11A 63W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 63W
  • Switching Energy: 73µJ (on), 47µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 22ns/100ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 93ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存20,568
600V
11A
22A
2.5V @ 15V, 4A
63W
73µJ (on), 47µJ (off)
Standard
12nC
22ns/100ns
400V, 4A, 100 Ohm, 15V
93ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG7PH42UDPBF
Infineon Technologies

IGBT 1200V 85A 320W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 320W
  • Switching Energy: 2.11mJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 157nC
  • Td (on/off) @ 25°C: 25ns/229ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 153ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存6,576
1200V
85A
90A
2V @ 15V, 30A
320W
2.11mJ (on), 1.18mJ (off)
Standard
157nC
25ns/229ns
600V, 30A, 10 Ohm, 15V
153ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot STGW35NB60SD
STMicroelectronics

IGBT 600V 70A 200W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 840µJ (on), 7.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 83nC
  • Td (on/off) @ 25°C: 92ns/1.1µs
  • Test Condition: 480V, 20A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 44ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存4,688
600V
70A
250A
1.7V @ 15V, 20A
200W
840µJ (on), 7.4mJ (off)
Standard
83nC
92ns/1.1µs
480V, 20A, 100 Ohm, 15V
44ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STGW45HF60WDI
STMicroelectronics

IGBT 600V 70A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: -/145ns
  • Test Condition: 400V, 30A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存3,600
600V
70A
150A
2.5V @ 15V, 30A
250W
330µJ (off)
Standard
160nC
-/145ns
400V, 30A, 4.7 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXBT14N300HV
IXYS

IGBT 3000V 38A TO268HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A
  • Power - Max: 200 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 62 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 960V, 14A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 1.4 µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXBT)
封裝: -
Request a Quote
3000 V
38 A
120 A
2.7V @ 15V, 14A
200 W
-
Standard
62 nC
-
960V, 14A, 20Ohm, 15V
1.4 µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXBT)
FGHL40T65MQD
onsemi

IGBT 650V 40A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 238 W
  • Switching Energy: 860µJ (on), 520µJ (off)
  • Input Type: Standard
  • Gate Charge: 86 nC
  • Td (on/off) @ 25°C: 22ns/109ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 33 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: -
庫存1,305
650 V
80 A
160 A
1.8V @ 15V, 40A
238 W
860µJ (on), 520µJ (off)
Standard
86 nC
22ns/109ns
400V, 40A, 10Ohm, 15V
33 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGW50NL65HRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 57A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 57 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 165 W
  • Switching Energy: 110µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 73 nC
  • Td (on/off) @ 25°C: 31ns/119ns
  • Test Condition: 400V, 12.5A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
封裝: -
Request a Quote
650 V
57 A
100 A
1.9V @ 15V, 25A
165 W
110µJ (on), 230µJ (off)
Standard
73 nC
31ns/119ns
400V, 12.5A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
SKB15N60E8151
Infineon Technologies

IGBT NPT 600V 31A TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 31 A
  • Current - Collector Pulsed (Icm): 62 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139 W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76 nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): 279 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封裝: -
Request a Quote
600 V
31 A
62 A
2.4V @ 15V, 15A
139 W
570µJ
Standard
76 nC
32ns/234ns
400V, 15A, 21Ohm, 15V
279 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IXXN200N65A4
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 440 A
  • Current - Collector Pulsed (Icm): 1200 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
  • Power - Max: 1250 W
  • Switching Energy: 8.8mJ (on), 6.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 736 nC
  • Td (on/off) @ 25°C: 140ns/1.04µs
  • Test Condition: 400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 160 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封裝: -
Request a Quote
650 V
440 A
1200 A
1.8V @ 15V, 200A
1250 W
8.8mJ (on), 6.7mJ (off)
Standard
736 nC
140ns/1.04µs
400V, 100A, 1Ohm, 15V
160 ns
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
IXYX120N120B3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 320 A
  • Current - Collector Pulsed (Icm): 800 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Power - Max: 1500 W
  • Switching Energy: 9.7mJ (on), 21.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 400 nC
  • Td (on/off) @ 25°C: 30ns/340ns
  • Test Condition: 960V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 54 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
封裝: -
Request a Quote
1200 V
320 A
800 A
2.2V @ 15V, 100A
1500 W
9.7mJ (on), 21.5mJ (off)
Standard
400 nC
30ns/340ns
960V, 100A, 1Ohm, 15V
54 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
STGB30H60DLLFBAG
STMicroelectronics

IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 5V, 30A
  • Power - Max: 260 W
  • Switching Energy: 600µJ (off)
  • Input Type: Logic
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: -/320ns
  • Test Condition: 400V, 30A, 10Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封裝: -
Request a Quote
600 V
60 A
120 A
2.15V @ 5V, 30A
260 W
600µJ (off)
Logic
110 nC
-/320ns
400V, 30A, 10Ohm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
SIGC42T60NCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 43ns/130ns
  • Test Condition: 300V, 50A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
50 A
150 A
2.5V @ 15V, 50A
-
-
Standard
-
43ns/130ns
300V, 50A, 3.3Ohm, 15V
-
-55°C ~ 150°C
Surface Mount
Die
Die